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    • 1. 发明授权
    • Surface-emitting laser device
    • 表面发射激光器件
    • US5883911A
    • 1999-03-16
    • US742160
    • 1996-11-01
    • Bun LeeJong-Hyeob BaekSung-Woo ChoiJin-Hong Lee
    • Bun LeeJong-Hyeob BaekSung-Woo ChoiJin-Hong Lee
    • H01S3/00H01S5/183H01S5/32H01S5/34H01S5/343H01S3/19
    • B82Y20/00H01S5/183H01S2301/173H01S5/1053H01S5/18319H01S5/3205H01S5/3215H01S5/3406H01S5/34313
    • An improved surface-emitting laser device by which the light emitting wave length can be easily varied since the electric potential grown using the thin film material having a desired lattice rate uses a very small portion of activation layers, and by which the continuous oscillation is made at room temperature by using the reflector having high reflective index. Thus, optical characteristics are increased, which includes a GaAs substrate; a lower reflector is formed of multiple layers of AlAs/GaAs heterogenous thin films having a reflective index of 1 on the GaAs substrate; a tooth-shaped grading layer is formed of a lower reflector on the lower reflector and an In.sub.x Ga.sub.1-x As thin film having a large lattice rate in a compositional grading method; a tooth-shaped InGaAs grading well is formed on the In.sub.x Ga.sub.1-x As grading layer as an In composition of which reduced rather than the grading layer; a buffer layer is formed on the In.sub.x Ga.sub.1-x As thin film and formed of a lattice-bonded InP; and an upper semiconductor reflector is formed on a multilayer of an InAlAs/InAlGaAs heterogenous thin film on the buffer layer, which has a reflective index of 1, in which a laser beam is emitted from the surface of the same.
    • 由于使用具有期望晶格率的薄膜材料生长的电位使用非常小部分的活化层,并且由此产生连续振荡,因此改进的表面发射激光器件可以容易地改变发光波长 通过使用具有高反射率的反射器在室温下进行。 因此,增加了包括GaAs衬底的光学特性; 在GaAs衬底上由反射率为1的多层AlAs / GaAs异质薄膜形成下反射体; 在下反射器上由下反射器形成的齿形分级层和在组成分级方法中具有大晶格率的In x Ga 1-x As薄膜; 在In x Ga 1-x As分级层上形成一个齿形的InGaAs分级阱,作为In组成减少而不是分级层; 在In x Ga 1-x As薄膜上形成缓冲层,由晶格键合的InP形成; 并且在缓冲层上的反射率为1的InAlAs / InAlGaAs异质薄膜的多层上形成上半导体反射器,其中从其表面发射激光束。
    • 4. 发明授权
    • Self-oscillation communication module
    • 自振荡通信模块
    • US07907851B2
    • 2011-03-15
    • US11720933
    • 2005-12-07
    • Dae-Kon OhJin-Hong LeeJin-Soo KimSung-Ui HongByung-Seok Choi
    • Dae-Kon OhJin-Hong LeeJin-Soo KimSung-Ui HongByung-Seok Choi
    • H04B10/00
    • H04B10/40
    • Provided is a self-oscillation communication module in which an optical device, a solar battery, and a radio frequency (RF) device are monolithic-integrated. When an active layer of the optical device contains In(Ga)As quantum dots, the optical device can emit light ranging from 800 to 1600 nm and transmit signals at a high speed of 20 Gbps or higher. Since a light absorption layer of the solar battery is formed of InGa(Al)P which has a higher bandgap than silicon and high visible light absorptivity, the solar battery can generate a large current even with a very small light reception area. Therefore, the self-oscillation communication module can always operate using the solar battery without an external power source even in polar regions and deserts and can perform optical communication or high-frequency wireless communication with a wide frequency range.
    • 提供了一种自振荡通信模块,其中光学装置,太阳能电池和射频(RF)装置是单片集成的。 当光学器件的有源层包含In(Ga)As量子点时,光学器件可以发射800至1600nm的光并以20Gbps或更高的高速传输信号。 由于太阳能电池的光吸收层由具有比硅更高的带隙和高可见光吸收率的InGa(Al)P形成,所以即使具有非常小的光接收面积,太阳能电池也可以产生大电流。 因此,即使在极地区域和沙漠中,自振荡通信模块也可以始终使用没有外部电源的太阳能电池进行操作,并且可以在宽频率范围内进行光通信或高频无线通信。
    • 8. 发明申请
    • SELF-OSCILLATION COMMUNICATION MODULE
    • 自振振荡通信模块
    • US20090223565A1
    • 2009-09-10
    • US11720933
    • 2005-12-07
    • Dae-Kon OhJin-Hong LeeJin-Soo KimSung-Ui HongByung-Seok Choi
    • Dae-Kon OhJin-Hong LeeJin-Soo KimSung-Ui HongByung-Seok Choi
    • H01L31/0264H01S5/343
    • H04B10/40
    • Provided is a self-oscillation communication module in which an optical device, a solar battery, and a radio frequency (RF) device are monolithic-integrated. When an active layer of the optical device contains In(Ga)As quantum dots, the optical device can emit light ranging from 800 to 1600 nm and transmit signals at a high speed of 20 Gbps or higher. Since a light absorption layer of the solar battery is formed of InGa(Al)P which has a higher bandgap than silicon and high visible light absorptivity, the solar battery can generate a large current even with a very small light reception area. Therefore, the self-oscillation communication module can always operate using the solar battery without an external power source even in polar regions and deserts and can perform optical communication or high-frequency wireless communication with a wide frequency range.
    • 提供了一种自振荡通信模块,其中光学装置,太阳能电池和射频(RF)装置是单片集成的。 当光学器件的有源层包含In(Ga)As量子点时,光学器件可以发射800至1600nm的光并以20Gbps或更高的高速传输信号。 由于太阳能电池的光吸收层由具有比硅更高的带隙和高可见光吸收率的InGa(Al)P形成,所以即使具有非常小的光接收面积,太阳能电池也可以产生大电流。 因此,即使在极地区域和沙漠中,自振荡通信模块也可以始终使用没有外部电源的太阳能电池进行操作,并且可以在宽频率范围内进行光通信或高频无线通信。