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    • 1. 发明授权
    • Light emitting diode with metal piles and multi-passivation layers and its manufacturing method
    • 具有金属堆和多层钝化层的发光二极管及其制造方法
    • US08847267B2
    • 2014-09-30
    • US12672404
    • 2008-08-07
    • Sang Mook KimJong Hyeob BaekGang Ho KimJung-In KangHong Seo YomYoung Moon Yu
    • Sang Mook KimJong Hyeob BaekGang Ho KimJung-In KangHong Seo YomYoung Moon Yu
    • H01L33/00H01L33/38H01L33/46
    • H01L33/385H01L33/46H01L2224/05568H01L2224/05573H01L2224/13H01L2224/49107H01L2924/00014H01L2933/0016H01L2224/05599
    • The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding pad through one or more second electrode lines. As effects of the present invention, the loss of light emitting area decreases and current diffusion efficiency increases.
    • 本发明涉及一种具有金属堆和一个或多个钝化层的发光二极管及其制造方法,该方法包括:分别在第一半导体层和第二半导体层上进行台面蚀刻的第一步, 一个底物顺序! 在台面蚀刻的上表面和侧面上形成反射层的第二步骤! 第三步骤,通过具有第二半导体层的反射器层将一个或多个第一电极与第一半导体层和一个或多个第二电极接触; 在反射层和接触电极上形成第一钝化层的第四步骤; 以及第五步骤,通过一个或多个第一电极线将第一电极连接到第一焊盘,使具有金属堆的形状的垂直延伸部的一端与一个或多个第二电极接触,并将 通过一个或多个第二电极线对第二焊盘的垂直延伸。 作为本发明的效果,发光面积的损失减小,电流扩散效率提高。
    • 2. 发明申请
    • Light Emitting Diode With Metal Piles and Multi-Passivation Layers and Its Manufacturing Method
    • 具有金属桩和多功能钝化层的发光二极管及其制造方法
    • US20110198635A1
    • 2011-08-18
    • US12672404
    • 2008-08-07
    • Sang Mook KimJong Hyeob BaekGang Ho KimJung-In KangHong Seo YomYoung Moon Yu
    • Sang Mook KimJong Hyeob BaekGang Ho KimJung-In KangHong Seo YomYoung Moon Yu
    • H01L33/60
    • H01L33/385H01L33/46H01L2224/05568H01L2224/05573H01L2224/13H01L2224/49107H01L2924/00014H01L2933/0016H01L2224/05599
    • The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding pad through one or more second electrode lines. As effects of the present invention, the loss of light emitting area decreases and current diffusion efficiency increases.
    • 本发明涉及一种具有金属堆和一个或多个钝化层的发光二极管及其制造方法,该方法包括:分别在第一半导体层和第二半导体层上进行台面蚀刻的第一步, 一个底物顺序! 在台面蚀刻的上表面和侧面上形成反射层的第二步骤! 第三步骤,通过具有第二半导体层的反射器层将一个或多个第一电极与第一半导体层和一个或多个第二电极接触; 在反射层和接触电极上形成第一钝化层的第四步骤; 以及第五步骤,通过一个或多个第一电极线将第一电极连接到第一焊盘,使具有金属堆的形状的垂直延伸部的一端与一个或多个第二电极接触,并将 通过一个或多个第二电极线对第二焊盘的垂直延伸。 作为本发明的效果,发光面积的损失减小,电流扩散效率提高。