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    • 9. 发明申请
    • AMRPHOUS SILICON CRYSTALLIZATION APPARATUS
    • 无机硅结晶装置
    • US20110139767A1
    • 2011-06-16
    • US12898195
    • 2010-10-05
    • Beong-Ju KIMJi-Su AHNCheol-Ho YU
    • Beong-Ju KIMJi-Su AHNCheol-Ho YU
    • H05B3/06H05B3/22
    • H01L21/02532H01L21/02667H01L21/67259H01L21/68H01L21/6838
    • Provided is an amorphous silicon (a-Si) crystallization apparatus for crystallizing a-Si into polysilicon (poly-Si), and more particularly, to an a-Si crystallization apparatus for crystallizing a-Si into poly-Si by applying a certain power voltage to a conductive thin film disposed on a substrate including an a-Si layer to generate joule heat, wherein the a-Si formed on the substrate can be crystallized using the same equipment regardless of the size of the substrate. The a-Si crystallization apparatus includes a process chamber, a substrate holder disposed at a lower part of the process chamber, a power voltage application part disposed at an upper part of the process chamber and including a first electrode and a second electrode having a polarity different from the first electrode, and a controller for adjusting a distance between the first and second electrode.
    • 提供了一种用于将a-Si结晶成多晶硅(poly-Si)的非晶硅(a-Si)结晶装置,更具体地说,涉及通过施加一定的功率将a-Si结晶成多晶硅的a-Si结晶装置 电压设置在包括a-Si层的基板上的导电薄膜以产生焦耳热,其中形成在基板上的a-Si可以使用相同的设备结晶,而与基板的尺寸无关。 a-Si结晶装置包括处理室,设置在处理室的下部的基板保持件,设置在处理室的上部的电源施加部,包括第一电极和具有极性的第二电极 与第一电极不同,以及用于调节第一和第二电极之间的距离的控制器。