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1. 发明申请

US20090250432A1 Method of controlling plasma distribution uniformity by time-weighted superposition of different solenoid fields 审中-公开
标题翻译：通过不同电磁场的时间加权叠加控制等离子体分布均匀性的方法
公开(公告)号：US20090250432A1
公开(公告)日：2009-10-08
申请号：US12082074
申请日：2008-04-07
申请人： Daniel J. Hoffman , Ezra Robert Gold , Douglas H. Burns , Douglas A. Buchberger, JR. , Michael Charles Kutney , Jang Gyoo Yang
发明人： Daniel J. Hoffman , Ezra Robert Gold , Douglas H. Burns , Douglas A. Buchberger, JR. , Michael Charles Kutney , Jang Gyoo Yang
IPC分类号： H01L21/3065 , C23C16/513
CPC分类号： C23C16/503 , H01J37/32091 , H01J37/321 , H01J37/32935
摘要： A method of processing a workpiece in a chamber of a plasma reactor having a set of plural electromagnet coils includes selecting plural predetermined plasma density distributions relative to a workpiece surface, the predetermined plasma density distributions corresponding to different sets of D.C. currents in the coils, and flowing a process gas into the chamber and generating a plasma in the chamber. The method further includes switching plasma in the chamber between the predetermined plasma density distributions by switching D.C. currents through the coils between the different sets of D.C. currents.
摘要翻译：一种在具有一组多个电磁线圈的等离子体反应器的腔室中处理工件的方法包括：相对于工件表面选择多个预定等离子体密度分布，对应于线圈中的不同DC电流集合的预定等离子体密度分布;以及将工艺气体流入室中并在室中产生等离子体。该方法还包括通过在不同的直流电流组之间切换通过线圈的直流电流来在腔室内切换预定等离子体密度分布之间的等离子体。

2. 发明申请

US20090250335A1 Method of controlling plasma distribution uniformity by superposition of different constant solenoid fields 审中-公开
标题翻译：通过叠加不同恒定电磁场控制等离子体分布均匀性的方法
公开(公告)号：US20090250335A1
公开(公告)日：2009-10-08
申请号：US12082097
申请日：2008-04-07
申请人： Daniel J. Hoffman , Ezra Robert Gold , Douglas H. Burns , Douglas A. Buchberger, JR. , Michael Charles Kutney , Jang Gyoo Yang
发明人： Daniel J. Hoffman , Ezra Robert Gold , Douglas H. Burns , Douglas A. Buchberger, JR. , Michael Charles Kutney , Jang Gyoo Yang
IPC分类号： H05H1/24
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32706
摘要： A method for processing a workpiece in a plasma reactor having a set of n coils includes constructing, for each one of the n coils, a set of plasma distributions for discrete values of coil current in a predetermined current range. The distributions are grouped, each group having one distribution for each of the n coils, and being a unique set of n distributions. A combined plasma distribution is computed from each group of distributions. The variance of each combined distribution is computed. The method further includes finding an optimum one of the combined distributions having an at least nearly minimum variance, and identifying the n coil currents associated with the optimum distribution. During plasma processing of the workpiece, currents through the coils are maintained at levels corresponding to the n coil currents associated with the one combined distribution.
摘要翻译：一种用于处理具有一组n个线圈的等离子体电抗器中的工件的方法包括为n个线圈中的每个线圈构建用于在预定电流范围内的线圈电流的离散值的一组等离子体分布。分布分组，每组具有n个线圈中的每一个的一个分布，并且是n个分布的唯一集合。从每组分布计算组合等离子体分布。计算每个组合分布的方差。该方法还包括找到具有至少接近最小方差的组合分布中的最佳一个，并且识别与最佳分布相关联的n个线圈电流。在工件的等离子体处理期间，通过线圈的电流保持在与一个组合分布相关联的n个线圈电流的水平。

3. 发明申请

US20090272717A1 METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS 审中-公开
标题翻译：基板蚀刻系统和工艺的方法和装置
公开(公告)号：US20090272717A1
公开(公告)日：2009-11-05
申请号：US12407548
申请日：2009-03-19
申请人： Sharma V. Pamarthy , Jon C. Farr , Khalid Sirajuddin , Ezra Robert Gold , James P. Cruse , Scott Olszewski , Roy C. Nangoy , Saravjeet Singh , Douglas A. Buchberger, JR. , Jared Ahmad Lee , Chunlei Zhang
发明人： Sharma V. Pamarthy , Jon C. Farr , Khalid Sirajuddin , Ezra Robert Gold , James P. Cruse , Scott Olszewski , Roy C. Nangoy , Saravjeet Singh , Douglas A. Buchberger, JR. , Jared Ahmad Lee , Chunlei Zhang
IPC分类号： C23F1/00
CPC分类号： H01L21/30655 , Y10T137/0318 , Y10T137/87169
摘要： Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.
摘要翻译：本发明的实施例涉及一种基板蚀刻系统和工艺。在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，以及在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏置功率在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。在另一个实施例中，系统可以包括气体输送系统，其包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导到该室用于促进在进出室和面板之间的气体之间的快速气体转变。

4. 发明授权

US08231799B2 Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone 有权
标题翻译：具有多个气体注入区域的等离子体反应器装置，其具有用于每个区域的时变单独的可配置气体组成
公开(公告)号：US08231799B2
公开(公告)日：2012-07-31
申请号：US11414026
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/3065 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01L21/31116
摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.
摘要翻译：用于处理诸如半导体晶片的工件的等离子体反应器具有限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。反应器还包括含有不同气体种类的多个气体源，多个处理气体入口和能够将所述多个气体源中的任一个耦合到所述多个处理气体入口中的任何一个的阀阵列。反应器还包括控制所述阀阵列的控制器，并被编程为随时间改变通过所述入口的气体的流速。反应器的天花板等离子体源功率电极具有耦合到各个工艺气体入口的多个气体注入区域。在一个优选的实施方案中，多个气体源包括分别含有分别具有不同比例的碳和氟化学物质的碳氟化合物或氟代烃物质的物料。它们还包括氧气或氮气供应和稀释气体供应。控制器被编程为通过不同的所述多个气体注入区域产生不同工艺气体种类或其混合物的流动。控制器进一步被编程为随时间改变流过不同的所述多个气体注入区域的气体的物质含量。

5. 发明授权

US07910013B2 Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure 有权
标题翻译：基于所选等离子体参数的预定并行行为作为源功率，偏置功率和腔室压力的函数来控制腔室的方法
公开(公告)号：US07910013B2
公开(公告)日：2011-03-22
申请号：US11608980
申请日：2006-12-11
申请人： Daniel J. Hoffman , Ezra Robert Gold
发明人： Daniel J. Hoffman , Ezra Robert Gold
IPC分类号： G01L21/30 , H01L21/66
CPC分类号： H01J37/32174 , H01J37/32935
摘要： For each one of plural plasma parameters, such as ion density, wafer voltage, etch rate, wafer current, a relevant surface of constant value is fetched from a memory. The relevant surface of constant value corresponds to a user-selected value of one of the plasma parameters, the surface being defined in a space of which each one of plural, chamber parameters (e.g., source power, bias power and chamber pressure) is a dimension. An intersection of these relevant surfaces is found, the intersection corresponding to a target value of source power, bias power and chamber pressure. The source power, the bias power and the chamber pressure, respectively, are set to their corresponding target values.
摘要翻译：对于诸如离子密度，晶片电压，蚀刻速率，晶片电流的多个等离子体参数中的每一个，从存储器取出恒定值的相关表面。恒定值的相关表面对应于等离子体参数之一的用户选择的值，表面被定义在其中多个室参数（例如，源功率，偏置功率和室压力）中的每一个为尺寸。找到这些相关表面的交点，该交点对应于源功率，偏置功率和室压力的目标值。源功率，偏置功率和室压力分别设置为其相应的目标值。

6. 发明授权

US07901952B2 Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters 失效
标题翻译：通过将M等离子体参数的期望值转换为N室参数的值来等离子体反应器控制
公开(公告)号：US07901952B2
公开(公告)日：2011-03-08
申请号：US11609024
申请日：2006-12-11
申请人： Daniel J. Hoffman , Ezra Robert Gold
发明人： Daniel J. Hoffman , Ezra Robert Gold
IPC分类号： H01L21/302
CPC分类号： H01J37/3299 , H01J37/32174 , H01J37/32935
摘要： The invention concerns a method of processing a wafer in a plasma reactor chamber by controlling plural chamber parameters in accordance with desired values of plural plasma parameters. The method includes concurrently translating a set of M desired values for M plasma parameters to a set of N values for respective N chamber parameters. The M plasma parameters are selected from a group including wafer voltage, ion density, etch rate, wafer current, etch selectivity, ion energy and ion mass. The N chamber parameters are selected from a group including source power, bias power, chamber pressure, inner magnet coil current, outer magnet coil current, inner zone gas flow rate, outer zone gas flow rate, inner zone gas composition, outer zone gas composition. The method further includes setting the N chamber parameters to the set of N values.
摘要翻译：本发明涉及通过根据多个等离子体参数的期望值来控制多个室参数来处理等离子体反应器室中的晶片的方法。该方法包括将用于M个等离子体参数的一组M个期望值同时翻译成用于各N个腔室参数的一组N个值。 M等离子体参数从包括晶片电压，离子密度，蚀刻速率，晶片电流，蚀刻选择性，离子能量和离子质量的组中选择。 N室参数选自源功率，偏置功率，室内压力，内部电磁线圈电流，外部电磁线圈电流，内部区域气体流量，外部区域气体流量，内部区域气体组成，外部区域气体组成。该方法还包括将N个室参数设置为N个值的集合。

7. 发明授权

US07541292B2 Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones 有权
标题翻译：在独立的内部和外部气体注入区域中分别进料碳贫和富碳聚合蚀刻气体的等离子体蚀刻工艺
公开(公告)号：US07541292B2
公开(公告)日：2009-06-02
申请号：US11414027
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/461
CPC分类号： H01L21/76802 , H01J37/32091 , H01J37/3244 , H01J37/3266 , H01J37/32706 , H01J2237/3347 , H01L21/31116
摘要： A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a first polymerizing etch process gas through a radially inward one of plural concentric gas injection zones in the ceiling electrode and injecting a second polymerizing etch process gas through a radially outward one of the plural concentric gas injection zones in the ceiling electrode, the compositions of the first and second process gases having first and second carbon-to-fluorine ratios that differ from one another. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.
摘要翻译：用于蚀刻工件上的电介质膜中的高纵横比开口的等离子体蚀刻工艺在具有覆盖工件的顶部电极的反应器和支撑工件的静电卡盘上进行。该方法包括将第一聚合蚀刻工艺气体通过天花板电极中的多个同心气体注入区的径向向内的一个注入，并且通过天花板电极中的多个同心气体注入区中的径向向外的一个喷射第二聚合蚀刻工艺气体，第一和第二工艺气体的组成具有彼此不同的第一和第二碳 - 氟比率。该方法还包括通过围绕工件边缘的泵送环空将气体从反应器排出，以及用蚀刻工艺气体衍生的蚀刻物质蚀刻电介质膜中的高纵横比开口，同时沉积衍生自蚀刻工艺气体的聚合物通过在反应器中产生等离子体而在工件上。

8. 发明授权

US07795153B2 Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters 有权
标题翻译：基于所选择的等离子体参数的预定并行行为作为所选腔室参数的函数来控制腔室的方法
公开(公告)号：US07795153B2
公开(公告)日：2010-09-14
申请号：US11608996
申请日：2006-12-11
申请人： Daniel J. Hoffman , Ezra Robert Gold
发明人： Daniel J. Hoffman , Ezra Robert Gold
IPC分类号： H01L21/302
CPC分类号： H01J37/32174 , H01J37/32935
摘要： The invention involves a method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural (i.e., N) plasma parameters by controlling plural chamber parameters. The plasma parameters may be selected from of a group including ion density, wafer voltage, etch rate, wafer current and possibly other plasma parameters. The chamber parameters may be selected from a group including source power, bias power, chamber pressure, magnet coil current of different coils, gas flow rate in different gas injection zones, gas species composition in different gas injection zones, and possibly other chamber parameters. The method begins with a first step carried out for each one of the selected plasma parameters. This first step consists of fetching from a memory a relevant surface of constant value corresponding to the user-selected value of the one plasma parameter, the surface being defined in a N-dimensional space of which each of the N chamber parameters is a dimension. This step further includes determining an intersection of these relevant surfaces, the intersection corresponding to a target value of each of the N chamber parameter. The method further includes setting each of the N chamber parameters to the corresponding target value.
摘要翻译：本发明涉及通过控制多个室参数，根据用户选择的多个（即N个）等离子体参数的值，在等离子体反应器室中的工件支撑基座上加工工件的方法。等离子体参数可以从包括离子密度，晶片电压，蚀刻速率，晶片电流以及可能的其它等离子体参数的组中选择。室参数可以从包括源功率，偏置功率，室压力，不同线圈的电磁线圈电流，不同气体注入区中的气体流量，不同气体注入区域中的气体种类组成以及可能的其它室参数的组中选择。该方法从针对所选等离子体参数中的每一个执行的第一步骤开始。该第一步骤包括从存储器取出对应于一个等离子体参数的用户选择值的恒定值的相关表面，该表面在N维空间中被限定，其中每个N室参数是维度。该步骤还包括确定这些相关表面的交点，与N室参数中的每一个的目标值相对应的交点。该方法还包括将每个N室参数设置为相应的目标值。

9. 发明授权

US07540971B2 Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content 有权
标题翻译：使用在晶片表面上聚合蚀刻气体的等离子体蚀刻工艺，以及在独立供气气体区域中管理或控制气体的另外的聚合物，其中气体含量随时间和空间调制
公开(公告)号：US07540971B2
公开(公告)日：2009-06-02
申请号：US11414015
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32449 , H01J2237/3347
摘要： A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power and/or HF and/or LF bias power to the electrodes at the ceiling and/or the electrostatic chuck. The process further includes slowing the deposition rate of the polymer, minimizing etch stop and/or increasing the etch rate in a region of the workpiece typically the center by injecting oxygen or nitrogen and/or high-fluorine containing gas through gas injection orifice in the corresponding region of the ceiling electrode, and adjusting the flow rate of the oxygen or nitrogen and/or high-fluorine containing gas through the gas injection orifice to minimize the difference between profiles and etch depths at the workpiece center and the workpiece periphery.
摘要翻译：等离子体蚀刻工艺在具有覆盖在工件上的天花板电极的反应器中的工件上的电介质膜中蚀刻高纵横比孔，以及支撑工件的静电卡盘。该方法包括将聚合蚀刻工艺气体注入天花板电极中的气体注入孔的环形区域，以及通过围绕工件边缘的泵送环从反应器排出气体。通过在蚀刻工艺气体中衍生出蚀刻物质，同时将从蚀刻工艺气体衍生的聚合物沉积到工件上，通过在反应器中产生等离子体，通过施加VHF源功率和/或HF来在电介质膜中蚀刻高纵横比开口和/或LF偏压电力到天花板和/或静电卡盘上的电极。该方法进一步包括减缓聚合物的沉积速率，通过在气体喷射孔中注入氧或氮和/或高含氟气体，在工件的区域中通常为中心使蚀刻停止和/或增加蚀刻速率最小化并且通过气体注入孔调节氧气或氮气和/或高含氟气体的流量，以最小化工件中心和工件外围处的轮廓和蚀刻深度之间的差异。

10. 发明授权

US07470626B2 Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure 失效
标题翻译：基于作为源功率，偏置功率和腔室压力的函数的所选等离子体参数的并行行为来表征腔室的方法
公开(公告)号：US07470626B2
公开(公告)日：2008-12-30
申请号：US11608944
申请日：2006-12-11
申请人： Daniel J. Hoffman , Ezra Robert Gold
发明人： Daniel J. Hoffman , Ezra Robert Gold
IPC分类号： H01L21/302
CPC分类号： H01J37/32174 , H01J37/32935
摘要： A plasma reactor chamber is characterized by performing two steps for each one of plural selected chamber parameters. The first step consists of ramping the level of the one chamber parameter while sampling RF electrical parameters at an RF bias power input to said wafer support pedestal and computing from each sample of said RF electrical parameters the values of the plasma parameters. The second step consists of deducing, from the corresponding chamber parameter data generated in the first step, a single variable function for each of the plural plasma parameters having said one chamber parameter as an independent variable, and constructing combinations of these functions that are three variable functions having each of the chamber parameters as a variable.
摘要翻译：等离子体反应室的特征在于对于多个选定的室参数中的每一个执行两个步骤。第一步包括在输入到所述晶片支撑基座的RF偏压功率下采样RF电参数，并且从所述RF电参数的每个样本计算所述等离子体参数的值来对所述一室参数的电平进行斜坡调整。第二步包括从在第一步骤中产生的相应室参数数据中推导出具有所述一个室参数作为独立变量的多个等离子体参数中的每一个的单个可变函数，以及构造这三个变量的这些函数的组合具有每个室参数作为变量的功能。

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