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1. 发明申请

US20090004873A1 HYBRID ETCH CHAMBER WITH DECOUPLED PLASMA CONTROLS 审中-公开
标题翻译：具有解压等离子体控制的混合隔离室
公开(公告)号：US20090004873A1
公开(公告)日：2009-01-01
申请号：US11749069
申请日：2007-06-26
申请人： Jang Gyoo Yang , Michael Barnes , Terry Bluck
发明人： Jang Gyoo Yang , Michael Barnes , Terry Bluck
IPC分类号： H01L21/461 , H01L21/306
CPC分类号： H01J37/321 , H01J37/32091 , H01J37/32165
摘要： A dielectric etch chamber and method for improved control of plasma parameters. The plasma chamber comprises dual-frequency bias source that capacitively couples the RF energy to the plasma, and a single or dual frequency source that inductively couples the RF energy to the plasma. The inductive source may be modulated for improved etch uniformity.
摘要翻译：一种用于改进等离子体参数控制的电介质蚀刻室和方法。等离子体室包括将RF能量电容耦合到等离子体的双频偏置源，以及将RF能量感应耦合到等离子体的单频或双频源。感应源可以被调制以提高蚀刻均匀性。

2. 发明授权

US07955986B2 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US07955986B2
公开(公告)日：2011-06-07
申请号：US11360944
申请日：2006-02-23
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H05H1/40 , C23C16/00 , C23C16/505 , C23C16/52 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

3. 发明授权

US06853141B2 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US06853141B2
公开(公告)日：2005-02-08
申请号：US10192271
申请日：2002-07-09
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H05H1/46 , H01J27/16 , H01J37/08 , H01J37/32 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。所述反应器还包括至少邻近所述天花板的顶部螺线管电磁体，所述架空螺线管电磁体，所述天花板，所述侧壁和所述工件支撑件沿着公共对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

4. 发明申请

US20110201134A1 CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL 审中-公开
标题翻译：具有磁性等离子体控制的电容耦合等离子体反应器
公开(公告)号：US20110201134A1
公开(公告)日：2011-08-18
申请号：US13081005
申请日：2011-04-06
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

5. 发明授权

US08481403B1 Flowable film dielectric gap fill process 有权
公开(公告)号：US08481403B1
公开(公告)日：2013-07-09
申请号：US12984524
申请日：2011-01-04
申请人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
发明人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
IPC分类号： H01L21/4757
CPC分类号： H01L21/31 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/0234 , H01L21/3121 , H01L21/3122 , H01L21/31608 , H01L21/76224
摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

6. 发明授权

US08171700B2 Hollow metal door 有权
标题翻译：空心金属门
公开(公告)号：US08171700B2
公开(公告)日：2012-05-08
申请号：US12717672
申请日：2010-03-04
申请人： Michael Barnes
发明人： Michael Barnes
IPC分类号： E04B1/00 , E04C2/54
CPC分类号： B21D47/00 , E06B1/16 , Y10T29/49629
摘要： A hollow metal door using hollow structural sections with closed cross section, along with the method for making same, is described herein.
摘要翻译：本文描述了使用具有封闭横截面的中空结构部分的中空金属门及其制造方法。

7. 发明授权

US07979217B2 Method and system for spectroscopic data analysis 有权
标题翻译：光谱数据分析方法与系统
公开(公告)号：US07979217B2
公开(公告)日：2011-07-12
申请号：US12368176
申请日：2009-02-09
申请人： Paul Gottlieb , Michael Barnes , Brian William Bourke
发明人： Paul Gottlieb , Michael Barnes , Brian William Bourke
IPC分类号： G01N31/00 , G01N23/00 , G06F19/00
CPC分类号： G01N23/2206 , G01N23/2252 , H01J2237/2561
摘要： A method of analyzing spectroscopic data, the method comprising collecting spatially resolved measurement spectroscopic data of a sample for a series of measurements spots, assigning the measurement spots into a predefined set of spectral categories, based on characteristics of the spectroscopic data of the respective measurement spots, identifying groupings of the measurement spots based on their respective spectral categories and their spatial relationships, and assigning each grouping of measurement spots to a fundamental sample unit data object.
摘要翻译：一种分析光谱数据的方法，所述方法包括：基于各个测量点的光谱数据的特性，将用于一系列测量点的样本的空间分辨测量分光数据收集到预定义的光谱类别集合中; 基于它们各自的光谱类别及其空间关系识别测量点的分组，以及将每个测量点分组分配给基本采样单元数据对象。

8. 发明申请

US20070173359A1 Performance arrow vane 审中-公开
标题翻译：表演箭头
公开(公告)号：US20070173359A1
公开(公告)日：2007-07-26
申请号：US11340395
申请日：2006-01-26
申请人： Richard Mowery , Michael Barnes , Dale Voice
发明人： Richard Mowery , Michael Barnes , Dale Voice
IPC分类号： A63B65/02
CPC分类号： F42B6/06
摘要： A vane for an archery arrow consisting of durable, stiff material, utilizing an overall vane length of approximately two inches or less, a maximum vane height of approximately 0.6 inches or less, a straight upper and rearward extending edge from the forward point of the vane to its maximum height, and a radial rear edge from the vane's maximum height to its rearward point. The invention provides arrow steering capabilities for which longer vanes or feathers were previously required, and further promotes accuracy by reducing weight at the nock end of the arrow.
摘要翻译：一种用于射箭箭头的叶片，其由耐用的刚性材料组成，利用大约两英寸或更小的总叶片长度，大约0.6英寸或更小的最大叶片高度，从叶片的前点的直的上部和后部延伸边缘到其最大高度，以及从叶片的最大高度到其后方的径向后边缘。本发明提供了先前需要更长叶片或羽毛的箭头转向能力，并且通过减小箭头的末端处的重量来进一步提高精度。

9. 发明申请

US20070051471A1 Methods and apparatus for stripping 审中-公开
标题翻译：剥离方法和装置
公开(公告)号：US20070051471A1
公开(公告)日：2007-03-08
申请号：US10264664
申请日：2002-10-04
申请人： Mark Kawaguchi , Elizabeth Pavel , James Papanu , Jonathan Mohn , John Yamartino , Christopher Lane , Michael Barnes , Robert Wunar
发明人： Mark Kawaguchi , Elizabeth Pavel , James Papanu , Jonathan Mohn , John Yamartino , Christopher Lane , Michael Barnes , Robert Wunar
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , G03F7/427 , H01J37/321 , H01J37/32357 , H01J2237/3342
摘要： One embodiment of the present invention is a stripping reactor that includes: (a) a remote plasma source disposed to output a gas; (b) a gas distribution plate connected to ground that transmits the gas output from the remote plasma source to a processing chamber; (c) a wafer support disposed in the processing chamber; (d) a wafer support assembly disposed about the wafer pedestal that includes an outer conductive peripheral structure connected to ground; and (e) an RF power supply connected to supply RF power to the wafer support.
摘要翻译：本发明的一个实施例是一种汽提反应器，其包括：（a）设置成输出气体的远程等离子体源; （b）连接到地面的气体分配板，其将从远程等离子体源输出的气体传送到处理室; （c）设置在处理室中的晶片支撑件; （d）设置在晶片基座周围的晶片支撑组件，其包括连接到地的外部导电外围结构; 和（e）连接以向晶片支架提供RF功率的RF电源。

10. 发明申请

US20050255697A1 Selective etching of organosilicate films over silicon oxide stop etch layers 有权
标题翻译：在氧化硅上选择性蚀刻有机硅酸盐停止蚀刻层
公开(公告)号：US20050255697A1
公开(公告)日：2005-11-17
申请号：US11075903
申请日：2005-03-09
申请人： Huong Nguyen , Michael Barnes , Li-Qun Xia , Mehul Naik
发明人： Huong Nguyen , Michael Barnes , Li-Qun Xia , Mehul Naik
IPC分类号： H01L21/311 , H01L21/312 , H01L21/768 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76813 , H01L21/31138 , H01L21/3122 , H01L21/76829 , H01L21/76835
摘要： A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.
摘要翻译：公开了一种在集成电路制造工艺中有选择地蚀刻有机硅酸盐层的方法。使用含氢碳氟化合物气体有选择地蚀刻有机硅酸盐层。当制造镶嵌结构时，含氢碳氟化合物气体可以用于选择性地蚀刻形成在氧化硅阻挡蚀刻层上的有机硅酸盐层。

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