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1. 发明申请

US20070297876A1 Heat Treatment Apparatus and Method of Manufacturing Substrate 有权
标题翻译：热处理设备及其制造方法
公开(公告)号：US20070297876A1
公开(公告)日：2007-12-27
申请号：US11658160
申请日：2005-08-01
申请人： Ryota Sasajima , Iwao Nakamura , Akira Morohashi , Ryuji Yamamoto
发明人： Ryota Sasajima , Iwao Nakamura , Akira Morohashi , Ryuji Yamamoto
IPC分类号： H01L21/673 , F27B5/04
CPC分类号： H01L21/67109 , C30B35/00 , H01L21/31662 , H01L21/324 , H01L21/67309 , H01L21/68735 , H01L21/68771
摘要： Heat treatment apparatus and a method of manufacturing a substrate are provided, in which drop of particles produced by a rubbing action between a support strip and a support member can be prevented. Heat treatment apparatus 10 has a reactor 40 for treating a substrate, and a support tool 30 for supporting the substrate 54 in the reactor 40. The support tool 30 has a support part 57 to be contacted to the substrate 54, and a support strip 67 for supporting the support part 57. A back of the support part 57 has a convex portion or a concave portion, and the back of the support part 54 is configured to be not contacted to an edge of the support strip 67, and contacted to a top of the support strip 67 at inner than the edge of the support strip 67.
摘要翻译：提供热处理装置和制造基板的方法，其中可以防止通过支撑条和支撑构件之间的摩擦作用产生的颗粒滴。热处理装置10具有用于处理基板的反应器40和用于将基板54支撑在反应器40中的支撑工具30。支撑工具30具有与基板54接触的支撑部57和用于支撑支撑部57的支撑条67。支撑部57的后部具有凸部或凹部，支撑部54的背面构造成不与支撑条67的边缘接触，并且与支撑条67的顶部接触比支撑条67的边缘更内侧。

2. 发明授权

US07891975B2 Heat treatment apparatus and method of manufacturing substrate 有权
标题翻译：热处理装置及其制造方法
公开(公告)号：US07891975B2
公开(公告)日：2011-02-22
申请号：US11658160
申请日：2005-08-01
申请人： Ryota Sasajima , Iwao Nakamura , Akira Morohashi , Ryuji Yamamoto
发明人： Ryota Sasajima , Iwao Nakamura , Akira Morohashi , Ryuji Yamamoto
IPC分类号： F27D5/00
CPC分类号： H01L21/67109 , C30B35/00 , H01L21/31662 , H01L21/324 , H01L21/67309 , H01L21/68735 , H01L21/68771
摘要： Heat treatment apparatus and a method of manufacturing a substrate are provided, in which drop of particles produced by a rubbing action between a support strip and a support member can be prevented. Heat treatment apparatus 10 has a reactor 40 for treating a substrate, and a support tool 30 for supporting the substrate 54 in the reactor 40. The support tool 30 has a support part 57 to be contacted to the substrate 54, and a support strip 67 for supporting the support part 57. A back of the support part 57 has a convex portion or a concave portion, and the back of the support part 54 is configured to be not contacted to an edge of the support strip 67, and contacted to a top of the support strip 67 at inner than the edge of the support strip 67.
摘要翻译：提供热处理装置和制造基板的方法，其中可以防止通过支撑条和支撑构件之间的摩擦作用产生的颗粒滴。热处理装置10具有用于处理基板的反应器40和用于将基板54支撑在反应器40中的支撑工具30.支撑工具30具有与基板54接触的支撑部57和支撑条67 用于支撑支撑部分57.支撑部分57的后部具有凸部或凹部，并且支撑部54的后部构造成不与支撑条67的边缘接触，并且与支撑条67的顶部在内部比支撑条67的边缘。

3. 发明授权

US07901206B2 Heat-treating apparatus and method of producing substrates 有权
标题翻译：热处理装置及其制造方法
公开(公告)号：US07901206B2
公开(公告)日：2011-03-08
申请号：US11887004
申请日：2006-03-27
申请人： Akira Morohashi , Iwao Nakamura , Ryota Sasajima , Keishin Yamazaki , Sadao Nakashima
发明人： Akira Morohashi , Iwao Nakamura , Ryota Sasajima , Keishin Yamazaki , Sadao Nakashima
IPC分类号： F27D1/18 , F27D3/16
CPC分类号： H01L21/67017 , H01L21/67109
摘要： A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.
摘要翻译：提供一种能够实现保持高度安全性的高精度加工的热处理装置及其制造方法。热处理装置包括用于处理基板的反应管; 用于支撑反应管的歧管; 和设置在反应管周围的加热器以加热反应管内部的加热器; 其中所述反应管和所述歧管在它们的连续平坦表面彼此接触时彼此接触; 盖构件被设置成从外侧覆盖反应管和歧管之间的接触部分; 并且盖构件设置有至少一个与形成在盖构件，反应管和歧管之间的空间连通的气体供给口或排气口。

4. 发明申请

US20090016854A1 Heat-treating apparatus and method of producing substrates 有权
标题翻译：热处理装置及其制造方法
公开(公告)号：US20090016854A1
公开(公告)日：2009-01-15
申请号：US11887004
申请日：2006-03-27
申请人： Akira Morohashi , Iwao Nakamura , Ryota Sasajima , Keishin Yamazaki , Sadao Nakashima
发明人： Akira Morohashi , Iwao Nakamura , Ryota Sasajima , Keishin Yamazaki , Sadao Nakashima
IPC分类号： B66C17/08
CPC分类号： H01L21/67017 , H01L21/67109
摘要： A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.
摘要翻译：提供一种能够实现保持高度安全性的高精度加工的热处理装置及其制造方法。热处理装置包括用于处理基板的反应管; 用于支撑反应管的歧管; 和设置在反应管周围的加热器以加热反应管内部的加热器; 其中所述反应管和所述歧管在它们的连续平坦表面彼此接触时彼此接触; 盖构件被设置成从外侧覆盖反应管和歧管之间的接触部分; 并且盖构件设置有至少一个与形成在盖构件，反应管和歧管之间的空间连通的气体供给口或排气口。

5. 发明申请

US20070275570A1 Heat Treatment Apparatus 审中-公开
标题翻译：热处理设备
公开(公告)号：US20070275570A1
公开(公告)日：2007-11-29
申请号：US10573025
申请日：2005-01-20
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Akira Morohashi , Keishin Yamazaki , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Akira Morohashi , Keishin Yamazaki , Sadao Nakashima
IPC分类号： H01L21/00
CPC分类号： H01L21/67303 , H01L21/324 , H01L21/67309
摘要： A heat treatment device where intervals between substrates supported by a supporter is reduced so that the number of substrates to be treated can be increased. A heat treatment device has a reaction furnace for treating substrates and a supporter for supporting the substrates in plural stages in the reaction furnace. The supporter has supporting plates in contact with the substrates and supporting members for supporting the supporting plates. A supporting plate and a supporting member are superposed on each other at least a part in the thickness direction.
摘要翻译：一种热处理装置，其中由支撑体支撑的基板之间的间隔减小，使得可以增加待处理的基板的数量。热处理装置具有用于处理基板的反应炉和用于在反应炉中多级支撑基板的支撑件。支撑件具有与基板接触的支撑板和用于支撑支撑板的支撑构件。支撑板和支撑构件在厚度方向上的至少一部分彼此重叠。

6. 发明授权

US08963051B2 Heat treatment apparatus and method of manufacturing substrates 有权
标题翻译：热处理装置及其制造方法
公开(公告)号：US08963051B2
公开(公告)日：2015-02-24
申请号：US11662573
申请日：2005-09-15
申请人： Tomoharu Shimada , Akira Morohashi , Kojiro Yokozawa , Keishin Yamazaki
发明人： Tomoharu Shimada , Akira Morohashi , Kojiro Yokozawa , Keishin Yamazaki
IPC分类号： F27B5/14 , F27D11/00 , C23C16/00 , H01L21/67
CPC分类号： H01L21/67109
摘要： A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction tube (42) at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.
摘要翻译：一种热处理设备，其中喷嘴精确地设置在适配器上以防止喷嘴干扰其它部件，并且可以减少由于喷嘴的热膨胀而导致的破裂的可能性。热处理装置（10）设有用于处理基板（54）的反应管（42），用于支撑反应管（42）的石英接头（44），连接到适配器（44）的喷嘴）和用于在反应管（42）内供给处理气体的加热器（46），以及设置在反应管（42）的外侧的加热器（46）。喷嘴（66）在反应管（42）中连接到适配器（44）的上平面，喷嘴（66）的至少一部分与适配器（44）连接，由石英制成，其他喷嘴部件由碳化硅制成。

7. 发明申请

US20080190910A1 Heat Treatment Apparatus and Method of Manufacturing Substrates 有权
标题翻译：热处理设备及其制造方法
公开(公告)号：US20080190910A1
公开(公告)日：2008-08-14
申请号：US11662573
申请日：2005-09-15
申请人： Tomoharu Shimada , Akira Morohashi , Kojiro Yokozawa , Keishin Yamazaki
发明人： Tomoharu Shimada , Akira Morohashi , Kojiro Yokozawa , Keishin Yamazaki
IPC分类号： F27B5/14
CPC分类号： H01L21/67109
摘要： A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction lube (42) at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.
摘要翻译：一种热处理设备，其中喷嘴精确地设置在适配器上以防止喷嘴干扰其它部件，并且可以减少由于喷嘴的热膨胀而导致的破裂的可能性。热处理装置（10）设有用于处理基板（54）的反应管（42），用于支撑反应管（42）的石英接头（44），连接到适配器（44）的喷嘴）和用于在反应管（42）内供给处理气体的加热器（46），以及设置在反应管（42）的外侧的加热器（46）。喷嘴（66）在反应润滑油（42）中连接到适配器（44）的上平面，至少一部分喷嘴（66）并与适配器（44）连接的部分由石英制成，其他喷嘴部件由碳化硅制成。

8. 发明授权

US06905963B2 Fabrication of B-doped silicon film by LPCVD method using BCI3 and SiH4 gases 有权
标题翻译：通过使用BCI3和SiH4气体的LPCVD方法制造B掺杂硅膜
公开(公告)号：US06905963B2
公开(公告)日：2005-06-14
申请号：US10255715
申请日：2002-09-27
申请人： Takaaki Noda , Akira Morohashi , Junji Asahi
发明人： Takaaki Noda , Akira Morohashi , Junji Asahi
IPC分类号： C23C16/24 , C23C16/452 , C23C16/46 , H01L21/3205 , H01L21/44
CPC分类号： C23C16/452 , C23C16/24 , C23C16/46 , H01L21/32055 , Y10S438/925 , Y10S438/935
摘要： A semiconductor device fabricating method for forming a boron doped silicon film includes the step of forming the boron doped silicon film on a substrate at an inner temperature of the reaction furnace ranging from about 460 to 600° C. or at an average velocity of reaction gases in the reaction furnace being not great than about 2200 cm/min. Further, a substrate processing apparatus for forming a boron doped silicon film on a substrate includes a gas supply line for supplying BCl3 to the reaction furnace. The gas supply line is installed in a portion of the reaction furnace opposite to a heater, and has an outlet for discharging BCl3. The outlet of the gas supply line is provided at an upstream side of gas flow in the reaction furnace.
摘要翻译：用于形成硼掺杂硅膜的半导体器件制造方法包括以下步骤：在反应炉的内部温度范围为约460-600℃或以平均反应气体速度在基底上形成硼掺杂硅膜在反应炉中不大于约2200cm / min。此外，在衬底上形成硼掺杂硅膜的衬底处理设备包括用于向反应炉供应BCl 3的气体供应管线。气体供给管线安装在与加热器相对的一部分反应炉中，并具有用于排出BCl 3 3的出口。气体供给管路的出口设置在反应炉内气流的上游侧。

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