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1. 发明申请

US20120102778A1 METHOD OF PRIMING AND DRYING SUBSTRATES 审中-公开
标题翻译：基板的抛光和干燥方法
公开(公告)号：US20120102778A1
公开(公告)日：2012-05-03
申请号：US13092661
申请日：2011-04-22
申请人： Ismail Kashkoush , David Magniarini , Carlos Ruiz
发明人： Ismail Kashkoush , David Magniarini , Carlos Ruiz
IPC分类号： F26B5/04 , B08B3/00
CPC分类号： H01L21/67034 , H01L21/02057
摘要： A method of priming and drying substrates having high-aspect ratio trenches. In one aspect, the method comprises: a) supporting at least one substrate having high-aspect ratio trenches in a process chamber having a gaseous atmosphere; b) sealing the process chamber; c) vacuuming the process chamber to achieve a first sub-atmospheric pressure within the process chamber; d) introducing a wetting solution into the process chamber while maintaining the process chamber at a second sub-atmospheric pressure until the substrate is immersed in the wetting solution; e) restoring the process chamber to atmospheric pressure while the substrate remains immersed in the wetting solution; and f) removing the substrate from the wetting solution.
摘要翻译：一种启动和干燥具有高纵横比沟槽的基板的方法。一方面，该方法包括：a）在具有气体气氛的处理室中支撑至少一个具有高纵横比沟槽的衬底; b）密封加工室; c）对处理室抽真空以在处理室内实现第一次大气压; d）将润湿溶液引入处理室中，同时将处理室保持在第二次大气压力，直到基板浸入润湿溶液中; e）当衬底保持浸入润湿溶液中时，将处理室恢复到大气压力; 和f）从润湿溶液中去除基底。

2. 发明授权

US08084280B2 Method of manufacturing a solar cell using a pre-cleaning step that contributes to homogeneous texture morphology 有权
标题翻译：使用有助于均匀纹理形态的预清洁步骤制造太阳能电池的方法
公开(公告)号：US08084280B2
公开(公告)日：2011-12-27
申请号：US12898374
申请日：2010-10-05
申请人： Ismail Kashkoush , Gim-Syang Chen
发明人： Ismail Kashkoush , Gim-Syang Chen
IPC分类号： H01L21/00
CPC分类号： H01L31/02363 , Y02E10/50
摘要： A method of manufacturing a solar cell wherein a pre-cleaning step is completed prior to a saw damage removal step and prior to texturization, thereby resulting in the subsequently formed textured surface to have a more homogeneous textural morphology. In one aspect, the invention is a method comprising: a) applying a pre-cleaning solution to an as-cut surface of a crystalline silicon substrate to remove surface contaminants, thereby converting the as-cut surface to a pre-cleaned surface, the as-cut surface formed by a sawing process to create the crystalline silicon substrate; b) applying a first etching solution to the pre-cleaned surface to remove physical damage caused during the sawing process, thereby converting the pre-cleaned surface into a prepared surface; c) applying a second etching solution to the prepared surface to texturize the prepared surface, thereby converting the prepared surface into a texturized surface; and d) forming at least one solar cell on the texturized surface of the crystalline silicon substrate.
摘要翻译：一种制造太阳能电池的方法，其中在锯损坏去除步骤之前和在纹理化之前完成预清洁步骤，从而导致随后形成的纹理表面具有更均匀的纹理形态。一方面，本发明是一种方法，包括：a）将预清洁溶液施加到晶体硅衬底的切割表面以除去表面污染物，从而将切割表面转化为预清洁的表面，通过锯切工艺形成的切割表面以产生晶体硅衬底; b）将第一蚀刻溶液施加到预清洁的表面以去除在锯切过程中引起的物理损伤，由此将预清洁的表面转化成准备好的表面; c）将第二蚀刻溶液施加到所制备的表面上以使所制备的表面纹理化，从而将制备的表面转化为组织化表面; 以及d）在所述晶体硅衬底的所述纹理化表面上形成至少一个太阳能电池。

3. 发明授权

US07169253B2 Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing 有权
标题翻译：光刻胶剥离和/或清洁用于集成电路制造的光掩模的工艺顺序
公开(公告)号：US07169253B2
公开(公告)日：2007-01-30
申请号：US10909764
申请日：2004-08-02
申请人： Gim-Syang Chen , Ismail Kashkoush , Richard Novak
发明人： Gim-Syang Chen , Ismail Kashkoush , Richard Novak
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： G03F7/423 , G03F7/428
摘要： A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.
摘要翻译：一种用于在用于集成电路制造的光掩模中清洁和/或剥离光致抗蚀剂的方法和系统，包括将硫酸和臭氧（或硫酸和过氧化氢的混合物）的混合物引入光掩模的表面的方法和装置，同时应用兆声波能量。本发明还包括方法和系统，其包括将臭氧化去离子水和/或低温稀释水溶液（dAPM）引入光掩模表面同时施加兆声波能量的方法和装置。该方法和设备还从光掩模表面除去后等离子体灰浆残留物和其它污染物。

4. 发明授权

US06767877B2 Method and system for chemical injection in silicon wafer processing 失效
标题翻译：硅晶片加工中的化学注入方法和系统
公开(公告)号：US06767877B2
公开(公告)日：2004-07-27
申请号：US10053364
申请日：2002-01-18
申请人： Chang Kuo , Ismail Kashkoush , Nick Yialamas , Gregory Skibinski
发明人： Chang Kuo , Ismail Kashkoush , Nick Yialamas , Gregory Skibinski
IPC分类号： B08B308
CPC分类号： B08B3/00 , H01L21/67086
摘要： Silicon wafers are treated with chemicals during the manufacture of integrated circuits according to the method of the invnention in the apparatus of the invention which comprises a process tank for cleaning, rinsing, and/or drying silicon wafers; a first chemical supply vessel suitable for being pressurized, fluidly coupled to the process tank; a chemical flow sensor for electronically monitoring the flow rate of chemical from the first hemical supply vessel; a first chemical flow metering valve for electronically controlling the flow rate of chemical from the first chemical supply vessel; a supply of hot DI water fluidly coupled to the process tank; a hot water metering valve for electronically controlling the flow rate of hot DI water from the supply of the hot DI water; a supply of cold DI water fluidly coupled to the process tank; a cold water metering means for electronically controlling the flow rate of cold DI water from the supply of cold DI water; water flow sensor means for electronically monitoring the flow rate of DI water; means for mixing the DI water and the first chemical to produce a solution of the first chemical in water; conductivity sensor means to electronically measure the conductivity of solution of the first chemical in water; temperature sensor means to electronically measure the temperature of the solution being supplied to the process tank; and control means for automatically adjusting the precise flow rate, temperature, pressure, and chemical concentration of solution supplied to the process tank.
摘要翻译：根据本发明的装置中的方法，在制造集成电路期间，用化学品处理硅晶片，其包括用于清洗，漂洗和/或干燥硅晶片的处理罐; 第一化学品供应容器，适于被加压，流体地联接到处理罐; 化学流量传感器，用于电子地监测来自第一个供血容器的化学物质的流量; 第一化学流量计量阀，用于电子控制来自第一化学品供应容器的化学品的流量; 供应流动耦合到处理罐的热去离子水; 一种热水计量阀，用于从热去离子水的供应电子控制热去离子水的流量; 供应流体耦合到处理罐的冷去离子水; 冷水计量装置，用于电子控制冷去离子水供应中冷去离子水的流量; 用于电子监测去离子水流量的水流传感器装置; 用于混合DI水和第一化学品以产生第一种化学品在水中的溶液的装置; 电导率传感器用于电子测量第一种化学品在水中的溶液的电导率; 温度传感器用于电子地测量供应给处理罐的溶液的温度; 以及用于自动调节提供给处理罐的溶液的精确流量，温度，压力和化学浓度的控制装置。

5. 发明授权

US08741066B2 Method for cleaning substrates utilizing surface passivation and/or oxide layer growth to protect from pitting 有权
标题翻译：使用表面钝化和/或氧化物层生长来清洁衬底以防止点蚀的方法
公开(公告)号：US08741066B2
公开(公告)日：2014-06-03
申请号：US12070620
申请日：2008-02-19
申请人： Ismail Kashkoush , Thomas Nolan , Dennis Nemeth , Richard Novak
发明人： Ismail Kashkoush , Thomas Nolan , Dennis Nemeth , Richard Novak
IPC分类号： B08B3/12 , B08B3/08
CPC分类号： H01L21/02052
摘要： A process/method for cleaning wafers that eliminates and/or reduces pitting caused by standard clean 1 by performing a pre-etch and then passivating the wafer surface prior to the application of the standard clean 1. The process/method may be especially useful for advanced front end of line post-CPM cleaning. In one embodiment, the invention is a method of processing a substrate comprising: a) providing at least one substrate; b) etching a surface of the substrate by applying an etching solution; c) passivating the etched surface of the substrate by applying ozone; and d) cleaning the passivated surface of the substrate by applying an aqueous solution comprising ammonium hydroxide and hydrogen peroxide.
摘要翻译：用于清洁晶片的方法/方法，其通过在施加标准清洁剂1之前执行预蚀刻然后钝化晶片表面来消除和/或减少由标准清洁1引起的点蚀。该方法/方法可能特别适用于高级前端线后CPM清洗。在一个实施例中，本发明是一种处理衬底的方法，包括：a）提供至少一个衬底; b）通过施加蚀刻溶液蚀刻所述基板的表面; c）通过施加臭氧钝化衬底的蚀刻表面; 以及d）通过施加包含氢氧化铵和过氧化氢的水溶液来清洁基材的钝化表面。

6. 发明授权

US07644512B1 Systems and methods for drying a rotating substrate 有权
标题翻译：用于干燥旋转底物的系统和方法
公开(公告)号：US07644512B1
公开(公告)日：2010-01-12
申请号：US11624445
申请日：2007-01-18
申请人： Zhi (Lewis) Liu , Ismail Kashkoush , Hanjoo Lee
发明人： Zhi (Lewis) Liu , Ismail Kashkoush , Hanjoo Lee
IPC分类号： F26B11/02
CPC分类号： H01L21/67034 , C11D11/0041 , C11D11/0047 , C11D11/0064 , H01L21/67028 , H01L21/67051 , Y10T428/24802 , Y10T428/28
摘要： A method of drying a surface of a substrate is provided. The method includes supporting and rotating a substrate; applying a liquid to the substrate surface at or near a rotational center point via a liquid dispenser (so that a film of the liquid is formed on the surface); applying a drying fluid to the substrate surface at a predetermined distance from the rotational center point via one or more drying fluid dispensers; and manipulating the drying fluid dispenser(s) so that the location at which the drying fluid is applied to the substrate is moved in a direction toward the rotational center point, while at the same time manipulating the liquid dispenser so that the location at which the liquid is applied to the substrate is moved in a direction outward from the rotational center point. The liquid dispenser and drying fluid dispenser(s) noted above can be located on and/or within an assembly. The assembly can include a first dispenser, a second dispenser, and a third dispenser. The first dispenser supplies liquid while the second and third dispensers supply drying fluid, where the second dispenser has a larger opening than the third dispenser. The second and third dispensers are positioned on the assembly next to one another and spaced from the first dispenser. Further, the second dispenser is located between the third dispenser and the first dispenser, such that the first dispenser is capable of linearly leading the second and third dispensers during movement.
摘要翻译：提供了干燥基材表面的方法。该方法包括支撑和旋转衬底; 通过液体分配器将液体施加到旋转中心点处或附近的基底表面（从而在表面上形成液体膜）; 通过一个或多个干燥流体分配器将干燥流体施加到距离旋转中心点预定距离的基底表面; 并且操作干燥流体分配器，使得将干燥流体施加到基底的位置沿着朝向旋转中心点的方向移动，同时操纵液体分配器，使得在该位置处液体被施加到基板上，从旋转中心点向外的方向移动。上述液体分配器和干燥流体分配器可以位于组件内和/或组件内。组件可以包括第一分配器，第二分配器和第三分配器。第一分配器供应液体，而第二和第三分配器供应干燥流体，其中第二分配器具有比第三分配器更大的开口。第二和第三分配器彼此相邻定位在组件上并且与第一分配器间隔开。此外，第二分配器位于第三分配器和第一分配器之间，使得第一分配器能够在运动期间线性地引导第二和第三分配器。

7. 发明申请

US20080035609A1 System And Method for Selective Etching Of Silicon Nitride During Substrate Processing 有权
标题翻译：衬底加工中氮化硅选择性蚀刻的系统和方法
公开(公告)号：US20080035609A1
公开(公告)日：2008-02-14
申请号：US10585229
申请日：2004-12-30
申请人： Ismail Kashkoush , Gim-Syang Chen , Richard Novak
发明人： Ismail Kashkoush , Gim-Syang Chen , Richard Novak
IPC分类号： H01L21/302 , C23F1/02
CPC分类号： H01L21/31111
摘要： A system (FIG. 5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process controller (200), a concentration sensor (50), a particle counter (55), and a bleed line (90). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.
摘要翻译：一种系统（图5）和用于在存在氧化硅的情况下选择性地蚀刻氮化硅的方法，其在稳定氧化硅蚀刻速率的同时提供高选择性。本发明包括处理室（10），分配管线（20,21,22），进料管线（30,31,32），再循环管线（40），过程控制器（200），浓度传感器（50），粒子计数器（55）和渗血线（90）。本发明在处理所述至少一个基板期间动态地控制所使用的蚀刻剂的组分的浓度比和/或动态地控制蚀刻剂内的颗粒计数。因此，蚀刻液浴寿命增加，蚀刻工艺参数得到更严格的控制。

8. 发明申请

US20060260638A1 Method and system for processing substrates with sonic energy that reduces or eliminates damage to semiconductor devices 审中-公开
标题翻译：用于处理具有声能的衬底的方法和系统，其减少或消除对半导体器件的损坏
公开(公告)号：US20060260638A1
公开(公告)日：2006-11-23
申请号：US11370361
申请日：2006-03-08
申请人： Pejman Fani , Ismail Kashkoush , John Korbler , Vivek Vohra , Alan Walter
发明人： Pejman Fani , Ismail Kashkoush , John Korbler , Vivek Vohra , Alan Walter
IPC分类号： B08B3/12 , B08B7/00
CPC分类号： B08B3/12 , H01L21/67051
摘要： A system and method for processing and/or cleaning substrates using sonic energy that eliminates or reduces damage to the substrates. In one aspect, the invention utilizes and produces low power density sonic energy to effectively remove particles from a substrate. In another aspect, the invention utilizes and generates a clean electrical signal for driving a source of sonic energy, such as a transducer.
摘要翻译：使用消除或减少对基底的损伤的声能处理和/或清洁基底的系统和方法。一方面，本发明利用并产生低功率密度的声能以有效地从基底去除颗粒。在另一方面，本发明利用并产生用于驱动声能源的清洁电信号，例如换能器。

9. 发明授权

US06928750B2 Membrane dryer 有权
标题翻译：膜干燥机
公开(公告)号：US06928750B2
公开(公告)日：2005-08-16
申请号：US10951009
申请日：2004-09-27
申请人： Ismail Kashkoush , Richard Novak , Larry Myland
发明人： Ismail Kashkoush , Richard Novak , Larry Myland
IPC分类号： B01D61/36 , B01D71/32 , B01D71/34 , B01D71/36 , B01F3/02 , B01F3/04 , F26B21/00
CPC分类号： B01F3/022 , B01F3/04021
摘要： A system, method, and apparatus for supplying a gas-liquid vapor to a process tank for performing semiconductor manufacturing. In one aspect, the invention is a method of supplying a gas-liquid vapor to a process tank comprising: supplying a gas stream through at least one hydrophobic tube; exposing the outside surface of the hydrophobic tube to a liquid so that a vapor of the liquid permeates the hydrophobic tube and enters the gas stream, forming a gas-liquid vapor inside the tube; and transporting the gas-liquid vapor to the process tank. In another aspect, the invention is an apparatus for supplying a gas-liquid vapor to a process tank comprising: at least one hydrophobic tube adapted to carry a gas; and a housing forming a chamber that surrounds the tube, the chamber adapted to receive a liquid that can permeate the tube, forming a gas-liquid vapor. In yet another aspect, the invention is a system for supplying a gas-liquid vapor to a process tank comprising: the apparatus of the present invention; gas supply means adapted to supply the gas to the tube; liquid supply means adapted to supply the liquid to the chamber; and gas-liquid transport means adapted to carry the gas-fluid vapor from the apparatus to the process tank.
摘要翻译：一种用于将气液蒸气供给到用于进行半导体制造的处理罐的系统，方法和装置。一方面，本发明是一种将气液蒸气供应到处理罐的方法，包括：通过至少一个疏水管供应气流; 将疏水管的外表面暴露于液体，使得液体的蒸气渗透疏水管并进入气流，在管内形成气液蒸汽; 并将气液蒸气输送到处理罐。在另一方面，本发明是一种用于将气液蒸气供应到处理罐的装置，包括：至少一个适于承载气体的疏水管; 以及壳体，其形成围绕所述管的室，所述室适于接收可渗透到所述管的液体，形成气液蒸气。在另一方面，本发明是一种用于将气液蒸气供应到处理罐的系统，包括：本发明的装置; 适于将气体供应到管的气体供应装置; 适于将液体供应到所述室的液体供应装置; 以及适于将气体 - 液体蒸气从设备运送到处理罐的气液输送装置。

10. 发明授权

US06871657B2 Low profile wafer carrier 失效
标题翻译：薄型晶圆载体
公开(公告)号：US06871657B2
公开(公告)日：2005-03-29
申请号：US10053449
申请日：2002-01-17
申请人： Jim Bottos , Tom Mancuso , Ismail Kashkoush
发明人： Jim Bottos , Tom Mancuso , Ismail Kashkoush
IPC分类号： H01L21/673 , B08B3/04
CPC分类号： H01L21/67313 , Y10S134/902
摘要： An apparatus for transporting semiconductor wafers between processing steps that can also be used to support the wafers during various processing steps. The apparatus minimizes the obstruction of fluid flow in the process tank, reduces the amount of devices that will fail due to edge exclusion, and reduces processing times. In one embodiment, the apparatus is a wafer carrier comprising a wire frame having three load supporting members, the load supporting members having a plurality of wafer engaging elements adapted to support a plurality of wafers.
摘要翻译：一种用于在处理步骤之间传输半导体晶片的装置，其也可用于在各种处理步骤期间支撑晶片。该装置使处理罐中流体流动的阻塞最小化，减少由于边缘排除而将失败的装置的量，并减少处理时间。在一个实施例中，该装置是包括具有三个负载支撑构件的线框架的晶片载体，负载支撑构件具有适于支撑多个晶片的多个晶片接合元件。

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