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1. 发明申请

US20050123839A1 Photo mask capable of improving resolution by utilizing polarization of light and method of manufacturing the same 有权
标题翻译：能够通过利用光的偏振改善分辨率的光掩模及其制造方法
公开(公告)号：US20050123839A1
公开(公告)日：2005-06-09
申请号：US10942047
申请日：2004-09-16
申请人： Sung-hyuck Kim , In-kyun Shin , Gi-sung Yoon
发明人： Sung-hyuck Kim , In-kyun Shin , Gi-sung Yoon
IPC分类号： H01L21/027 , G03F1/14 , G03F9/00 , G21K5/00
CPC分类号： G03F1/38 , G03F1/50
摘要： A photo mask enhances the resolution of a photolithography process by polarizing the exposure light. The photo mask includes a transparent substrate made of quartz, a reflection pattern disposed on the transparent substrate, and a light-blocking pattern disposed on the reflection pattern. The external reflection pattern defines a light-transmitting area by exposing portions of the transparent substrate. The light-blocking pattern has the same size and shape as the external reflection pattern.
摘要翻译：光掩模通过偏振曝光光增强了光刻工艺的分辨率。光掩模包括由石英制成的透明基板，设置在透明基板上的反射图案和设置在反射图案上的遮光图案。外部反射图案通过暴露透明基板的部分来限定透光区域。遮光图案具有与外部反射图案相同的尺寸和形状。

2. 发明授权

US07432022B2 Photo mask capable of improving resolution by utilizing polarization of light and method of manufacturing the same 有权
标题翻译：能够通过利用光的偏振改善分辨率的光掩模及其制造方法
公开(公告)号：US07432022B2
公开(公告)日：2008-10-07
申请号：US10942047
申请日：2004-09-16
申请人： Sung-hyuck Kim , In-kyun Shin , Gi-sung Yoon
发明人： Sung-hyuck Kim , In-kyun Shin , Gi-sung Yoon
IPC分类号： G03F1/00
CPC分类号： G03F1/38 , G03F1/50
摘要： A photo mask enhances the resolution of a photolithography process by polarizing the exposure light. The photo mask includes a transparent substrate made of quartz, a reflection pattern disposed on the transparent substrate, and a light-blocking pattern disposed on the reflection pattern. The external reflection pattern defines a light-transmitting area by exposing portions of the transparent substrate. The light-blocking pattern has the same size and shape as the external reflection pattern.
摘要翻译：光掩模通过偏振曝光光增强了光刻工艺的分辨率。光掩模包括由石英制成的透明基板，设置在透明基板上的反射图案和设置在反射图案上的遮光图案。外部反射图案通过暴露透明基板的部分来限定透光区域。遮光图案具有与外部反射图案相同的尺寸和形状。

3. 发明申请

US20050123845A1 Method of adjusting deviation of critical dimension of patterns 审中-公开
标题翻译：调整模式临界尺寸偏差的方法
公开(公告)号：US20050123845A1
公开(公告)日：2005-06-09
申请号：US11030435
申请日：2005-01-07
申请人： Sung-min Huh , Sung-hyuck Kim , In-kyun Shin
发明人： Sung-min Huh , Sung-hyuck Kim , In-kyun Shin
IPC分类号： G03C5/00 , G03F1/36 , G03F1/60 , G03F1/68 , G03F1/80 , G03F7/00 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , H01L23/544
CPC分类号： G03F7/70625 , G03F7/70433 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A method of adjusting a deviation of a critical dimension of patterns formed by a photolithography process is disclosed. The method comprises measuring the deviation of the critical dimension of patterns formed by the photolithography process and then forming a recess, an undercut, or an isotropic groove in a photomask. The recess, undercut, or isotropic groove is formed to have dimensions corresponding to the amount of deviation of the critical dimension in the patterns. The dimensions of the recess, undercut, or isotropic groove are generally smaller than a wavelength λ of an exposure source used in the photolithography process.
摘要翻译：公开了一种调整由光刻工艺形成的图案的临界尺寸偏差的方法。该方法包括测量由光刻工艺形成的图案的临界尺寸的偏差，然后在光掩模中形成凹槽，底切或各向同性凹槽。凹槽，底切或各向同性沟槽形成为具有与图案中的临界尺寸的偏差量相对应的尺寸。凹槽，底切或各向同性沟槽的尺寸通常小于在光刻工艺中使用的曝光源的波长λ。

4. 发明申请

US20060019176A1 Chromeless phase shift mask and method of fabricating the same 审中-公开
标题翻译：无色相移掩模及其制造方法
公开(公告)号：US20060019176A1
公开(公告)日：2006-01-26
申请号：US11067338
申请日：2005-02-28
申请人： Sung-hyuck Kim , In-kyun Shin
发明人： Sung-hyuck Kim , In-kyun Shin
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/34 , G03F1/28
摘要： A chromeless phase shift mask (PSM) can be used in a single exposure process to produce a pattern whose features have different after development inspection critical dimensions (ADI CDs). The chromeless PSM includes a mask and a plurality of phase shifters constituted by recesses in the mask substrate. The recesses have different depths so that the phase shifters will produce different phase differences in the exposure light transmitted by the mask. The recesses are formed by etching the mask substrate. The mask substrate is initially etched to form a first set of the recesses. Some of these recesses are left as is to constitute the first phase shifters. The substrate is then further etched at the location of at least another of the first recesses to form the second phase shifter(s).
摘要翻译：无色相移掩模（PSM）可以在单次曝光过程中使用，以产生其特征在开发后检验关键尺寸（ADI CD）上具有不同的图案。无铬PSM包括掩模和由掩模基板中的凹部构成的多个移相器。凹槽具有不同的深度，使得移相器将在由掩模透射的曝光光中产生不同的相位差。通过蚀刻掩模基板形成凹部。最初蚀刻掩模基底以形成第一组凹陷。这些凹部中的一些被遗弃以构成第一移相器。然后在至少另一个第一凹部的位置处进一步蚀刻衬底以形成第二移相器。

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