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1. 发明授权

US06685800B2 Apparatus for generating inductively coupled plasma 有权
标题翻译：用于产生电感耦合等离子体的装置
公开(公告)号：US06685800B2
公开(公告)日：2004-02-03
申请号：US10003195
申请日：2001-11-14
申请人： Hong Seub Kim , Gi Chung Kwon , Sun Seok Han , Choong Won Lee , Sung Weon Lee , Hong Sik Byun
发明人： Hong Seub Kim , Gi Chung Kwon , Sun Seok Han , Choong Won Lee , Sung Weon Lee , Hong Sik Byun
IPC分类号： C23C1600
CPC分类号： H01J37/32522 , H01J37/321
摘要： Disclosed is an apparatus for generating ICP, which has a heater having a hot wire as a heating source for heating elements in a chamber and inner wall of the chamber and also efficiently transfers heat of the heater through a heat transferring gas to the elements in the chamber and the inner wall of the chamber. According to the present invention, the elements in the chamber and the inner wall of the chamber can be heated up to a temperature of about 200° C., thereby reducing the adhesion of the by-product served as the source generating the undesirable particles. In addition, since the hot wire having a longer life span than the halogen lamp is used as heat radiating means, the life span of the apparatus is also increased.
摘要翻译：公开了一种用于产生ICP的装置，其具有加热器，该加热器具有热丝作为加热室，用于加热腔室中的元件和腔室的内壁，并且还通过传热气体将加热器的热量有效地传递到室和室的内壁。根据本发明，室中的元件和室的内壁可被加热至约200℃的温度，从而降低了作为产生不期望的颗粒的源的副产物的粘附。此外，由于使用寿命比卤素灯长的热丝作为散热装置，因此装置的使用寿命也增加。

2. 发明授权

US06653988B2 Parallel resonance whirl antenna 有权
公开(公告)号：US06653988B2
公开(公告)日：2003-11-25
申请号：US10185676
申请日：2002-06-27
申请人： Gi Chung Kwon , Hong Sik Byun , Sung Weon Lee , Hong Seub Kim , Sun Seok Han , Bu Jin Ko , Joung Sik Kim
发明人： Gi Chung Kwon , Hong Sik Byun , Sung Weon Lee , Hong Seub Kim , Sun Seok Han , Bu Jin Ko , Joung Sik Kim
IPC分类号： H01Q136
CPC分类号： H01Q21/24 , H01Q1/38 , H01Q9/27 , H01Q21/20
摘要： Disclosed is a parallel resonance antenna comprising: a whirl antenna having a plurality of antenna units installed two-dimensionally and radially around a central point, each of the antenna units having a ground point at a predetermined position thereof, portions outside the ground points respectively being bent in a same direction, the antenna units having a same size and direction, angles between the antenna units at the central point being all the same; a central conductive line connected to the central point to be normal to the whirl antenna, for being supplied with an RF power; a metal plate installed over and apart from the whirl antenna, the metal plate being connected with end portions of the antenna units, and having a penetration hole through which the central conductive line passes without contacting with the metal plate; and a variable resonance capacitor installed in series between the central conductive line and the metal plate. According to a parallel resonance antenna, the geometrical structure enables to obtain a uniform plasma. Since the antenna has a small inductance, impedance matching is easy even at the VHF band. Also, at the resonance point, since the potential of the inner portions (Z1, Z2, Z3 and Z4) of the ground points of the antenna units is low, it becomes possible to decrease a non-desired sputtering phenomenon.

3. 发明授权

US06530993B2 Cluster tool for fabricating semiconductor device 有权
标题翻译：用于制造半导体器件的簇工具
公开(公告)号：US06530993B2
公开(公告)日：2003-03-11
申请号：US09793949
申请日：2001-02-27
申请人： Chul Ju Hwang , Sung Weon Lee
发明人： Chul Ju Hwang , Sung Weon Lee
IPC分类号： C23C1600
CPC分类号： H01L21/67167 , H01L21/67781 , Y10S414/135
摘要： A cluster tool for fabricating a semiconductor device includes: a transfer chamber having a wafer handling robot; a plurality of process chambers installed adjacent to each wall face of the transfer chamber; a loadlock chamber installed adjacent to different wall faces of the transfer chamber, in which a cassette is positioned to bring in and take out a wafer; and a cooling chamber installed at one side of a different wall face of the transfer chamber with an open-and-shut unit therebetween, the cooling chamber being provided with a wafer multiple-mounting unit having a plurality of wafer mounting plates for simultaneously mounting wafers which finishes undergoing processes in the process chamber and cooling them. Since it includes a fresh structure of wafer multiple-mounting unit, even though the plurality of process chambers of the cluster tool simultaneously proceed the fabrication process of a semiconductor device, the process bottle neck phenomenon as in the conventional art would not occur even though the wafer is delayed to be cooled. Consequently, the process time is shortened and thus the production cost of the semiconductor device can be reduced.
摘要翻译：用于制造半导体器件的簇工具包括：具有晶片处理机器人的传送室; 与传送室的每个壁面相邻设置的多个处理室; 安装在传送室的不同壁面附近的装载室，其中盒被定位成带入和取出晶片; 以及冷却室，其安装在所述转移室的不同壁面的一侧，其间具有打开和关闭单元，所述冷却室设置有具有多个晶片安装板的晶片多重安装单元，所述晶片安装单元同时安装晶片其完成在处理室中进行处理并冷却它们。由于它包括晶片多重安装单元的新鲜结构，即使集群工具的多个处理室同时进行半导体器件的制造过程，也不会发生如传统技术中的工艺瓶颈现象，即使晶片被延迟冷却。因此，缩短了处理时间，可以降低半导体装置的制造成本。

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