会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Wafer susceptor
    • 晶圆座
    • US06683274B1
    • 2004-01-27
    • US10295954
    • 2002-11-18
    • Gi Chung KwonSoo Sik YoonHong Sik Byun
    • Gi Chung KwonSoo Sik YoonHong Sik Byun
    • B23K1000
    • H01L21/67103C23C16/4586C23C16/505H01J37/32082
    • Disclosed is a wafer susceptor which includes: a ceramic body; a RF electrode mounted within the ceramic body; a heater mounted within the ceramic body and spaced apart from the RF electrode by a predetermined distance to be disposed below the RF electrode; and an RF shield of a metal material, the RF shield being electrically grounded and mounted within the ceramic body, the RF shield being disposed between the RF electrode and the heater without being in contact with either the heater or the RF electrode. In case where an RF power is applied to the RF electrode, it is possible to minimize an influence of an RF noise on the heater 24. Accordingly, since the RF power can be applied to the susceptor while heating the susceptor at a high temperature, it is possible to deposit a high-density thin film and also control properties of the thin film such as stress and step coverage. Further, the invention may take the stabilization of the power system.
    • 公开了一种晶片基座,其包括:陶瓷体; 安装在陶瓷体内的RF电极; 安装在陶瓷体内并与RF电极隔开预定距离的加热器,以设置在RF电极下方; 以及金属材料的RF屏蔽层,RF屏蔽层电接地并安装在陶瓷体内,RF屏蔽件设置在RF电极和加热器之间,而不与加热器或RF电极接触。 在向RF电极施加RF功率的情况下,可以使RF噪声对加热器24的影响最小化。因此,由于可以在高温下加热基座的同时向基座施加RF功率, 可以沉积高密度薄膜,并且还可以控制薄膜的性能,例如应力和台阶覆盖。 此外,本发明可以实现电力系统的稳定。