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    • 7. 发明申请
    • Semiconductor Devices Having Field Effect Transistors With Epitaxial Patterns in Recessed Regions
    • 具有场效应晶体管的半导体器件在嵌入区域中具有外延图案
    • US20110241071A1
    • 2011-10-06
    • US13078159
    • 2011-04-01
    • Dongsuk ShinDong Hyuk KimMyungsun KimYongJoo LeeHoi Sung Chung
    • Dongsuk ShinDong Hyuk KimMyungsun KimYongJoo LeeHoi Sung Chung
    • H01L29/06
    • H01L29/7834H01L29/6653H01L29/6659H01L29/66636
    • A semiconductor device includes a device isolation pattern, a gate line, and an epitaxial pattern. The device isolation pattern is disposed in a semiconductor substrate to define an active area. The gate line intersects the active area. The epitaxial pattern fills a recess region in the active area at one side of the gate line and includes a different constituent semiconductor element than the semiconductor substrate. The recess region includes a first inner sidewall that is adjacent to the device isolation pattern and extends in the lengthwise direction of the gate, and a second inner sidewall that extends in the direction perpendicular to the lengthwise direction of the gate line. The active area forms the first inner sidewall of the recess, while the device isolation layer forms at least a portion of the second inner sidewall of the recess. The epitaxial pattern contacts the first inner sidewall and the second inner sidewall of the recess region.
    • 半导体器件包括器件隔离图案,栅极线和外延图案。 器件隔离图案设置在半导体衬底中以限定有源区。 栅极线与有效区域相交。 外延图案填充栅极线一侧的有源区域中的凹陷区域,并且包括与半导体衬底不同的构成半导体元件。 所述凹部区域包括与所述器件隔离图案相邻并沿所述栅极的长度方向延伸的第一内侧壁和沿与所述栅极线的长度方向垂直的方向延伸的第二内侧壁。 有源区域形成凹部的第一内侧壁,而器件隔离层形成凹部的第二内侧壁的至少一部分。 外延图案接触凹陷区域的第一内侧壁和第二内侧壁。