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1. 发明申请

US20160218214A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20160218214A1
公开(公告)日：2016-07-28
申请号：US15092171
申请日：2016-04-06
申请人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
发明人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
IPC分类号： H01L29/78 , H01L29/16 , H01L27/092 , H01L29/165 , H01L29/06 , H01L29/08 , H01L29/161
CPC分类号： H01L29/7848 , H01L21/02057 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/30608 , H01L21/3065 , H01L21/823412 , H01L21/823425 , H01L27/088 , H01L27/0924 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/45 , H01L29/66636
摘要： A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.

2. 发明授权

US08803210B2 X-ray detector 有权
标题翻译： X射线探测器
公开(公告)号：US08803210B2
公开(公告)日：2014-08-12
申请号：US12975568
申请日：2010-12-22
申请人： Kwan-Wook Jung , Dong-Hyuk Kim , Woo-Jae Lim , Jea-Eun Ryu
发明人： Kwan-Wook Jung , Dong-Hyuk Kim , Woo-Jae Lim , Jea-Eun Ryu
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14663
摘要： An X-ray detector includes a substrate; a gate line that is extended in a first direction on the substrate; a gate electrode that is extended from the gate line; a semiconductor layer that is positioned on the gate electrode; a source electrode and drain electrode that are positioned on the semiconductor layer; a lower electrode that is extended from the drain electrode; a photodiode that is positioned on the lower electrode; a first insulation layer that is positioned on the source electrode and the drain electrode and that includes a first opening that exposes the source electrode; and a data line that is extended in a second direction intersecting a first direction on the first insulation layer to intersect the gate line with the first insulation layer interposed between the data line and the gate line, and the data line being electrically connected to the source electrode through the first opening.
摘要翻译： X射线检测器包括：基板; 在基板上沿第一方向延伸的栅极线; 从栅极线延伸的栅电极; 位于栅电极上的半导体层; 位于所述半导体层上的源电极和漏电极; 从所述漏电极延伸的下电极; 位于下电极上的光电二极管; 第一绝缘层，其位于源电极和漏电极上，并且包括暴露源电极的第一开口; 以及数据线，其在与所述第一绝缘层上的第一方向相交的第二方向上延伸以与所述栅极线相交，并且所述第一绝缘层插入在所述数据线和所述栅极线之间，并且所述数据线电连接到所述源极电极通过第一个开口。

3. 发明授权

US08703592B2 Methods of forming semiconductor devices having faceted semiconductor patterns 有权
标题翻译：形成具有刻面半导体图案的半导体器件的方法
公开(公告)号：US08703592B2
公开(公告)日：2014-04-22
申请号：US13052460
申请日：2011-03-21
申请人： Myung-Sun Kim , Dong-Suk Shin , Dong-Hyuk Kim , Yong-Joo Lee , Hoi-Sung Chung
发明人： Myung-Sun Kim , Dong-Suk Shin , Dong-Hyuk Kim , Yong-Joo Lee , Hoi-Sung Chung
IPC分类号： H01L21/425
CPC分类号： H01L29/66636 , H01L21/26586 , H01L29/165 , H01L29/665 , H01L29/6653 , H01L29/6659 , H01L29/66628 , H01L29/7834
摘要： Provided are methods of forming semiconductor devices. A method may include preparing a semiconductor substrate including a first region and a second region adjacent the first region. The method may also include forming sacrificial pattern covering the second region and exposing the first region. The method may further include forming a capping layer including a faceted sidewall on the first region using selective epitaxial growth (SEG). The faceted sidewall may be separate from the sacrificial pattern. The sacrificial pattern may be removed. Impurity ions may be implanted into the semiconductor substrate.
摘要翻译：提供了形成半导体器件的方法。一种方法可以包括制备包括第一区域和邻近第一区域的第二区域的半导体衬底。该方法还可以包括形成覆盖第二区域并暴露第一区域的牺牲图案。该方法还可以包括使用选择性外延生长（SEG）在第一区域上形成包括有侧壁的覆盖层。小面侧壁可以与牺牲图案分离。可以去除牺牲图案。杂质离子可以注入到半导体衬底中。

4. 发明授权

US08648424B2 Semiconductor device including transistors having embedded source/drain regions each including upper and lower main layers comprising germanium 有权
标题翻译：半导体器件包括具有嵌入的源/漏区的晶体管，每个晶体管包括包含锗的上和下主层
公开(公告)号：US08648424B2
公开(公告)日：2014-02-11
申请号：US13600375
申请日：2012-08-31
申请人： Hoi-Sung Chung , Dong-Hyuk Kim , Myung-Sun Kim , Dong-Suk Shin
发明人： Hoi-Sung Chung , Dong-Hyuk Kim , Myung-Sun Kim , Dong-Suk Shin
IPC分类号： H01L21/70
CPC分类号： H01L27/088 , H01L21/823412 , H01L21/823418 , H01L29/165 , H01L29/66636 , H01L29/7834 , H01L29/7848
摘要： A semiconductor device includes a substrate having a channel region, a gate insulation layer on the channel region, a gate electrode on the gate insulation layer, and source and drain regions in recesses in the substrate on both sides of the channel region, respectively. The source and drain regions include a lower main layer whose bottom surface is located at level above the bottom of a recess and lower than that of the bottom surface of the gate insulation layer, and a top surface no higher than the level of the bottom surface of the gate insulation layer, and an upper main layer contacting the lower main layer and whose top surface extends to a level higher than that of the bottom surface of the gate insulation layer, and in which the lower layer has a Ge content higher than that of the upper layer.
摘要翻译：半导体器件包括具有沟道区的衬底，沟道区上的栅极绝缘层，栅极绝缘层上的栅电极，以及沟道区两侧的衬底中的凹槽中的源极和漏极区。源极和漏极区域包括下表面位于凹槽底部的平面以上并且低于栅极绝缘层的底表面的下主层，以及不高于底表面的高度的顶表面的栅极绝缘层的上部主层和与下部主层接触的上部主层，其上表面延伸到比栅极绝缘层的底面高的水平，并且其中下层的Ge含量高于栅极绝缘层的底面。的上层。

5. 发明授权

US08299465B2 X-ray detector 有权
标题翻译： X射线探测器
公开(公告)号：US08299465B2
公开(公告)日：2012-10-30
申请号：US12972393
申请日：2010-12-17
申请人： Kwan-Wook Jung , Dong-Hyuk Kim
发明人： Kwan-Wook Jung , Dong-Hyuk Kim
IPC分类号： H01L31/119
CPC分类号： H01L31/022408 , H01L27/1461 , H01L27/14632 , H01L27/14643 , H01L27/14663 , H01L27/14692 , H01L31/119
摘要： An X-ray detector constructed as an exemplary embodiment of the present invention includes a semiconductor layer, a data line including a source electrode covering a first portion of the semiconductor layer, a drain electrode disposed opposite to the source electrode, a first lower electrode formed on the upper portion of a second portion of the semiconductor layer and a gate insulating layer and elongated from the drain electrode, and a passivation layer formed on the upper portion of one part of the lower electrode including the drain electrode. Further, the second lower electrode is formed approaching the gate electrode. The X-ray detector constructed as the exemplary embodiment of the present invention includes a second lower electrode formed on the passivation layer and placed approaching a gate electrode. The area in which a diode is disposed may be maximized, and the amount of leakage current may be reduced.
摘要翻译：作为本发明的示例性实施例构造的X射线检测器包括半导体层，包括覆盖半导体层的第一部分的源电极的数据线，与源电极相对设置的漏极，形成的第一下电极在所述半导体层的第二部分的上部和栅极绝缘层上并且从所述漏极延伸，以及钝化层，形成在包括所述漏电极的所述下电极的一部分的上部。此外，第二下电极形成为接近栅电极。作为本发明的示例性实施例构造的X射线检测器包括形成在钝化层上并放置为接近栅电极的第二下电极。设置二极管的区域可以最大化，并且可以减少泄漏电流的量。

6. 发明授权

US08097480B2 Liquid crystal display and method of making the same 有权
标题翻译：液晶显示及其制作方法
公开(公告)号：US08097480B2
公开(公告)日：2012-01-17
申请号：US12762571
申请日：2010-04-19
申请人： Ki-wan Ahn , Jae-seong Byun , In-sung Lee , Dong-hyuk Kim , Jung-mok Park
发明人： Ki-wan Ahn , Jae-seong Byun , In-sung Lee , Dong-hyuk Kim , Jung-mok Park
IPC分类号： H01L21/00
CPC分类号： G02F1/1339 , G02F1/133371 , G02F1/133555 , G02F1/136227 , H01L27/1248 , H01L27/1288
摘要： A method of making a liquid crystal display having a display region and a non-display region, the method comprises forming a thin film transistor (“TFT”) having a drain electrode on an insulating substrate, forming an inorganic layer and an organic insulating layer sequentially on the TFT, forming an organic insulating layer pattern, by patterning the organic insulating layer, comprising a first organic layer hole to expose the inorganic layer on the drain electrode and a second organic layer hole formed along a circumference of the display region where the organic insulating layer is partially removed, removing the inorganic layer exposed through the first organic layer hole and the organic insulating layer remaining in the second organic layer hole, and forming a sealant in the second organic hole. The present invention thus provides a method of making an LCD to prevent a color filter substrate separating from a TFT substrate using fewer masks.
摘要翻译：一种制造具有显示区域和非显示区域的液晶显示器的方法，所述方法包括在绝缘基板上形成具有漏电极的薄膜晶体管（“TFT”），形成无机层和有机绝缘层顺序地在TFT上形成有机绝缘层图案，通过图案化有机绝缘层，包括第一有机层孔以露出漏电极上的无机层和沿着显示区域的圆周形成的第二有机层孔，有机绝缘层被部分去除，去除通过第一有机层孔露出的无机层和留在第二有机层孔中的有机绝缘层，并在第二有机孔中形成密封剂。因此，本发明提供了制造LCD以防止滤色器基板与使用较少掩模的TFT基板分离的方法。

7. 发明申请

US20110104838A1 LIQUID CRYSTAL DISPLAY AND METHOD OF MAKING THE SAME 有权
标题翻译：液晶显示及其制作方法
公开(公告)号：US20110104838A1
公开(公告)日：2011-05-05
申请号：US12762571
申请日：2010-04-19
申请人： Ki-wan AHN , Jae-seong BYUN , In-sung LEE , Dong-hyuk KIM , Jung-mok PARK
发明人： Ki-wan AHN , Jae-seong BYUN , In-sung LEE , Dong-hyuk KIM , Jung-mok PARK
IPC分类号： H01L33/08
CPC分类号： G02F1/1339 , G02F1/133371 , G02F1/133555 , G02F1/136227 , H01L27/1248 , H01L27/1288
摘要： A method of making a liquid crystal display having a display region and a non-display region, the method comprises forming a thin film transistor (“TFT”) having a drain electrode on an insulating substrate, forming an inorganic layer and an organic insulating layer sequentially on the TFT, forming an organic insulating layer pattern, by patterning the organic insulating layer, comprising a first organic layer hole to expose the inorganic layer on the drain electrode and a second organic layer hole formed along a circumference of the display region where the organic insulating layer is partially removed, removing the inorganic layer exposed through the first organic layer hole and the organic insulating layer remaining in the second organic layer hole, and forming a sealant in the second organic hole. The present invention thus provides a method of making an LCD to prevent a color filter substrate separating from a TFT substrate using fewer masks.
摘要翻译：一种制造具有显示区域和非显示区域的液晶显示器的方法，所述方法包括在绝缘基板上形成具有漏电极的薄膜晶体管（“TFT”），形成无机层和有机绝缘层顺序地在TFT上形成有机绝缘层图案，通过图案化有机绝缘层，包括第一有机层孔以露出漏电极上的无机层和沿着显示区域的圆周形成的第二有机层孔，有机绝缘层被部分去除，去除通过第一有机层孔露出的无机层和留在第二有机层孔中的有机绝缘层，并在第二有机孔中形成密封剂。因此，本发明提供了制造LCD以防止滤色器基板与使用较少掩模的TFT基板分离的方法。

8. 发明授权

US07211606B2 Process for the preparation of dimethylether from hydrocarbons 有权
标题翻译：从碳氢化合物制备二甲醚的方法
公开(公告)号：US07211606B2
公开(公告)日：2007-05-01
申请号：US11450580
申请日：2006-06-10
申请人： Young Soon Baek , Won Ihl Cho , Byoung Hak Cho , Jung Chul Suh , Dong Hyuk Kim , Hyung Gyu Kim , Seung Ho Lee , Woo Sung Ju
发明人： Young Soon Baek , Won Ihl Cho , Byoung Hak Cho , Jung Chul Suh , Dong Hyuk Kim , Hyung Gyu Kim , Seung Ho Lee , Woo Sung Ju
IPC分类号： C07C27/00
CPC分类号： C07C41/09 , C07C41/01 , C07C43/043
摘要： Disclosed herein is a process for the preparation of dimethylether from hydrocarbons, including tri-reforming a feedstock mixture comprised of hydrocarbons, carbon dioxide and water vapor in the presence of a tri-reforming catalyst, to prepare a syngas, which then undergoes gas-phase direct synthesis into dimethylether in one step in the presence of a hybrid catalyst. According to the process of this invention, three main processes among typical syngas preparation processes are simultaneously performed, and then, the syngas thus obtained is prepared into dimethylether through a direct reaction in one step, thereby decreasing the apparatus cost and operation cost. In addition, all of the carbon dioxide separated and recovered from the unreacted material and by-products may be reused as reaction material, thus decreasing the generation of carbon dioxide and reducing the material cost.
摘要翻译：本文公开了一种从烃制备二甲醚的方法，包括在三重转化催化剂的存在下，由烃，二氧化碳和水蒸气组成的原料混合物进行三重重整，以制备合成气，然后将其合成气相在混合催化剂存在下，在一个步骤中直接合成二甲醚。根据本发明的方法，同时进行典型的合成气制备过程中的三个主要过程，然后通过一步直接反应将由此获得的合成气制备成二甲醚，从而降低设备成本和操作成本。此外，从未反应的物质和副产物中分离回收的二氧化碳全部可以作为反应物质再利用，从而减少二氧化碳的产生并降低材料成本。

9. 发明申请

US20060267016A1 Liquid crystal display and method of making the same 审中-公开
标题翻译：液晶显示及其制作方法
公开(公告)号：US20060267016A1
公开(公告)日：2006-11-30
申请号：US11439645
申请日：2006-05-24
申请人： Ki-wan Ahn , Jae-seong Byun , In-sung Lee , Dong-hyuk Kim , Jung-mok Park
发明人： Ki-wan Ahn , Jae-seong Byun , In-sung Lee , Dong-hyuk Kim , Jung-mok Park
IPC分类号： H01L21/00
CPC分类号： G02F1/1339 , G02F1/133371 , G02F1/133555 , G02F1/136227 , H01L27/1248 , H01L27/1288
摘要： A method of making a liquid crystal display having a display region and a non-display region, the method comprises forming a thin film transistor (“TFT”) having a drain electrode on an insulating substrate, forming an inorganic layer and an organic insulating layer sequentially on the TFT, forming an organic insulating layer pattern, by patterning the organic insulating layer, comprising a first organic layer hole to expose the inorganic layer on the drain electrode and a second organic layer hole formed along a circumference of the display region where the organic insulating layer is partially removed, removing the inorganic layer exposed through the first organic layer hole and the organic insulating layer remaining in the second organic layer hole, and forming a sealant in the second organic hole. The present invention thus provides a method of making an LCD to prevent a color filter substrate separating from a TFT substrate using fewer masks.
摘要翻译：一种制造具有显示区域和非显示区域的液晶显示器的方法，所述方法包括在绝缘基板上形成具有漏电极的薄膜晶体管（“TFT”），形成无机层和有机绝缘层顺序地在TFT上形成有机绝缘层图案，通过图案化有机绝缘层，包括第一有机层孔以露出漏电极上的无机层和沿着显示区域的圆周形成的第二有机层孔，有机绝缘层被部分去除，去除通过第一有机层孔露出的无机层和留在第二有机层孔中的有机绝缘层，并在第二有机孔中形成密封剂。因此，本发明提供了制造LCD以防止滤色器基板与使用较少掩模的TFT基板分离的方法。

10. 发明申请

US20160049512A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20160049512A1
公开(公告)日：2016-02-18
申请号：US14925679
申请日：2015-10-28
申请人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
发明人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
IPC分类号： H01L29/78 , H01L29/165 , H01L29/08 , H01L27/088 , H01L29/06
CPC分类号： H01L29/7848 , H01L21/02057 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/30608 , H01L21/3065 , H01L21/823412 , H01L21/823425 , H01L27/088 , H01L27/0924 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/45 , H01L29/66636
摘要： A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.

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