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1. 发明申请

US20110241071A1 Semiconductor Devices Having Field Effect Transistors With Epitaxial Patterns in Recessed Regions 有权
标题翻译：具有场效应晶体管的半导体器件在嵌入区域中具有外延图案
公开(公告)号：US20110241071A1
公开(公告)日：2011-10-06
申请号：US13078159
申请日：2011-04-01
申请人： Dongsuk Shin , Dong Hyuk Kim , Myungsun Kim , YongJoo Lee , Hoi Sung Chung
发明人： Dongsuk Shin , Dong Hyuk Kim , Myungsun Kim , YongJoo Lee , Hoi Sung Chung
IPC分类号： H01L29/06
CPC分类号： H01L29/7834 , H01L29/6653 , H01L29/6659 , H01L29/66636
摘要： A semiconductor device includes a device isolation pattern, a gate line, and an epitaxial pattern. The device isolation pattern is disposed in a semiconductor substrate to define an active area. The gate line intersects the active area. The epitaxial pattern fills a recess region in the active area at one side of the gate line and includes a different constituent semiconductor element than the semiconductor substrate. The recess region includes a first inner sidewall that is adjacent to the device isolation pattern and extends in the lengthwise direction of the gate, and a second inner sidewall that extends in the direction perpendicular to the lengthwise direction of the gate line. The active area forms the first inner sidewall of the recess, while the device isolation layer forms at least a portion of the second inner sidewall of the recess. The epitaxial pattern contacts the first inner sidewall and the second inner sidewall of the recess region.
摘要翻译：半导体器件包括器件隔离图案，栅极线和外延图案。器件隔离图案设置在半导体衬底中以限定有源区。栅极线与有效区域相交。外延图案填充栅极线一侧的有源区域中的凹陷区域，并且包括与半导体衬底不同的构成半导体元件。所述凹部区域包括与所述器件隔离图案相邻并沿所述栅极的长度方向延伸的第一内侧壁和沿与所述栅极线的长度方向垂直的方向延伸的第二内侧壁。有源区域形成凹部的第一内侧壁，而器件隔离层形成凹部的第二内侧壁的至少一部分。外延图案接触凹陷区域的第一内侧壁和第二内侧壁。

2. 发明授权

US08426926B2 Semiconductor devices having field effect transistors with epitaxial patterns in recessed regions 有权
标题翻译：具有在凹陷区域中具有外延图案的场效应晶体管的半导体器件
公开(公告)号：US08426926B2
公开(公告)日：2013-04-23
申请号：US13078159
申请日：2011-04-01
申请人： Dongsuk Shin , Dong Hyuk Kim , Myungsun Kim , YongJoo Lee , Hoi Sung Chung
发明人： Dongsuk Shin , Dong Hyuk Kim , Myungsun Kim , YongJoo Lee , Hoi Sung Chung
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L29/00
CPC分类号： H01L29/7834 , H01L29/6653 , H01L29/6659 , H01L29/66636
摘要： A semiconductor device includes a device isolation pattern, a gate line, and an epitaxial pattern. The device isolation pattern is disposed in a semiconductor substrate to define an active area. The gate line intersects the active area. The epitaxial pattern fills a recess region in the active area at one side of the gate line and includes a different constituent semiconductor element than the semiconductor substrate. The recess region includes a first inner sidewall that is adjacent to the device isolation pattern and extends in the lengthwise direction of the gate, and a second inner sidewall that extends in the direction perpendicular to the lengthwise direction of the gate line. The active area forms the first inner sidewall of the recess, while the device isolation layer forms at least a portion of the second inner sidewall of the recess. The epitaxial pattern contacts the first inner sidewall and the second inner sidewall of the recess region.
摘要翻译：半导体器件包括器件隔离图案，栅极线和外延图案。器件隔离图案设置在半导体衬底中以限定有源区。栅极线与有效区域相交。外延图案填充栅极线一侧的有源区域中的凹陷区域，并且包括与半导体衬底不同的构成半导体元件。所述凹部区域包括与所述器件隔离图案相邻并沿所述栅极的长度方向延伸的第一内侧壁和沿与所述栅极线的长度方向垂直的方向延伸的第二内侧壁。有源区域形成凹部的第一内侧壁，而器件隔离层形成凹部的第二内侧壁的至少一部分。外延图案接触凹陷区域的第一内侧壁和第二内侧壁。

3. 发明申请

US20120244674A1 METHODS FOR FABRICATING SEMICONDUCTOR DEVICES 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20120244674A1
公开(公告)日：2012-09-27
申请号：US13427411
申请日：2012-03-22
申请人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
发明人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
IPC分类号： H01L21/336
CPC分类号： H01L29/66636 , H01L21/02057 , H01L21/30608 , H01L21/3065 , H01L29/165 , H01L29/78 , H01L29/7848
摘要： A method of fabricating a semiconductor device includes providing a semiconductor substrate including a channel region, forming a gate electrode structure on the channel region of the semiconductor substrate, forming a first trench in the semiconductor substrate, and forming a second trench in the semiconductor device. The first trench may include a first tip that protrudes toward the channel. The second trench may be an enlargement of the first trench and may include a second tip that also protrudes toward the channel region. In some examples, the second tip may protrude further towards the channel region than the first tip.
摘要翻译：一种制造半导体器件的方法包括提供包括沟道区的半导体衬底，在半导体衬底的沟道区上形成栅电极结构，在半导体衬底中形成第一沟槽，以及在半导体器件中形成第二沟槽。第一沟槽可以包括朝向通道突出的第一尖端。第二沟槽可以是第一沟槽的放大，并且可以包括也朝向沟道区域突出的第二尖端。在一些示例中，第二尖端可以比第一尖端更远地朝向通道区域突出。

4. 发明申请

US20160218214A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20160218214A1
公开(公告)日：2016-07-28
申请号：US15092171
申请日：2016-04-06
申请人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
发明人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
IPC分类号： H01L29/78 , H01L29/16 , H01L27/092 , H01L29/165 , H01L29/06 , H01L29/08 , H01L29/161
CPC分类号： H01L29/7848 , H01L21/02057 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/30608 , H01L21/3065 , H01L21/823412 , H01L21/823425 , H01L27/088 , H01L27/0924 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/45 , H01L29/66636
摘要： A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.

5. 发明申请

US20160049512A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20160049512A1
公开(公告)日：2016-02-18
申请号：US14925679
申请日：2015-10-28
申请人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
发明人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
IPC分类号： H01L29/78 , H01L29/165 , H01L29/08 , H01L27/088 , H01L29/06
CPC分类号： H01L29/7848 , H01L21/02057 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/30608 , H01L21/3065 , H01L21/823412 , H01L21/823425 , H01L27/088 , H01L27/0924 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/45 , H01L29/66636
摘要： A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.

6. 发明授权

US08921192B2 Semiconductor devices and methods of fabricating the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08921192B2
公开(公告)日：2014-12-30
申请号：US13615825
申请日：2012-09-14
申请人： Dong Hyuk Kim , Hoi Sung Chung , Myungsun Kim , Dongsuk Shin
发明人： Dong Hyuk Kim , Hoi Sung Chung , Myungsun Kim , Dongsuk Shin
IPC分类号： H01L21/336 , H01L29/66 , H01L21/02 , H01L29/78 , H01L29/165
CPC分类号： H01L29/7834 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L29/0692 , H01L29/165 , H01L29/66636 , H01L29/7848
摘要： A MOS transistor includes a pair of impurity regions formed in a substrate as spaced apart from each other, and a gate electrode formed on a region of the substrate located between the pair of impurity regions. Each of the impurity regions is formed of a first epitaxial layer, a second epitaxial layer on the first epitaxial layer, and a third epitaxial layer on the second epitaxial layer. The first epitaxial layer is formed of at least one first sub-epitaxial layer and a respective second sub-epitaxial layer stacked on each first sub-epitaxial layer. An impurity concentration of the first sub-epitaxial layer is less than that of the second sub-epitaxial layer.
摘要翻译： MOS晶体管包括在彼此间隔开的基板中形成的一对杂质区，以及形成在位于该对杂质区之间的基板的区域上的栅电极。每个杂质区由第一外延层，第一外延层上的第二外延层和第二外延层上的第三外延层形成。第一外延层由堆叠在每个第一子外延层上的至少一个第一子外延层和相应的第二子外延层形成。第一子外延层的杂质浓度小于第二子外延层的杂质浓度。

7. 发明授权

US09236475B2 Semiconductor devices and methods of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09236475B2
公开(公告)日：2016-01-12
申请号：US14820314
申请日：2015-08-06
申请人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
发明人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
IPC分类号： H01L21/336 , H01L29/78 , H01L27/088 , H01L29/08 , H01L29/45
CPC分类号： H01L29/7848 , H01L21/02057 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/30608 , H01L21/3065 , H01L21/823412 , H01L21/823425 , H01L27/088 , H01L27/0924 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/45 , H01L29/66636
摘要： A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.
摘要翻译：制造一个或多个半导体器件的方法包括在半导体衬底中形成沟槽，执行循环过程以从沟槽去除污染物，以及在沟槽上形成外延层。循环过程包括将含有锗烷，氯化氢和氢的第一反应气体和含有氯化氢和氢的第二反应气体依次提供到半导体衬底上。

8. 发明申请

US20150349122A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150349122A1
公开(公告)日：2015-12-03
申请号：US14820314
申请日：2015-08-06
申请人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
发明人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
IPC分类号： H01L29/78 , H01L29/08 , H01L29/45 , H01L27/088
CPC分类号： H01L29/7848 , H01L21/02057 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/30608 , H01L21/3065 , H01L21/823412 , H01L21/823425 , H01L27/088 , H01L27/0924 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/45 , H01L29/66636
摘要： A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.
摘要翻译：制造一个或多个半导体器件的方法包括在半导体衬底中形成沟槽，执行循环过程以从沟槽去除污染物，以及在沟槽上形成外延层。循环过程包括将含有锗烷，氯化氢和氢的第一反应气体和含有氯化氢和氢的第二反应气体依次提供到半导体衬底上。

9. 发明授权

US08900942B2 Semiconductor devices and methods of fabricating the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08900942B2
公开(公告)日：2014-12-02
申请号：US13422077
申请日：2012-03-16
申请人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
发明人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
IPC分类号： H01L21/20 , H01L21/335 , H01L21/8234 , H01L21/02 , H01L29/66 , H01L29/78 , H01L21/306 , H01L21/3065
CPC分类号： H01L29/7848 , H01L21/02057 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/30608 , H01L21/3065 , H01L21/823412 , H01L21/823425 , H01L27/088 , H01L27/0924 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/45 , H01L29/66636
摘要： A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.
摘要翻译：制造一个或多个半导体器件的方法包括在半导体衬底中形成沟槽，执行循环过程以从沟槽去除污染物，以及在沟槽上形成外延层。循环过程包括将含有锗烷，氯化氢和氢的第一反应气体和含有氯化氢和氢的第二反应气体依次提供到半导体衬底上。

10. 发明授权

US08551846B2 Methods for fabricating semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08551846B2
公开(公告)日：2013-10-08
申请号：US13427411
申请日：2012-03-22
申请人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
发明人： Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
IPC分类号： H01L21/336
CPC分类号： H01L29/66636 , H01L21/02057 , H01L21/30608 , H01L21/3065 , H01L29/165 , H01L29/78 , H01L29/7848
摘要： A method of fabricating a semiconductor device includes providing a semiconductor substrate including a channel region, forming a gate electrode structure on the channel region of the semiconductor substrate, forming a first trench in the semiconductor substrate, and forming a second trench in the semiconductor device. The first trench may include a first tip that protrudes toward the channel. The second trench may be an enlargement of the first trench and may include a second tip that also protrudes toward the channel region. In some examples, the second tip may protrude further towards the channel region than the first tip.
摘要翻译：一种制造半导体器件的方法包括提供包括沟道区的半导体衬底，在半导体衬底的沟道区上形成栅电极结构，在半导体衬底中形成第一沟槽，以及在半导体器件中形成第二沟槽。第一沟槽可以包括朝向通道突出的第一尖端。第二沟槽可以是第一沟槽的放大，并且可以包括也朝向沟道区域突出的第二尖端。在一些示例中，第二尖端可以比第一尖端更远地朝向通道区域突出。

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