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1. 发明授权

US08133663B2 Pattern forming method and apparatus 有权
标题翻译：图案形成方法和装置
公开(公告)号：US08133663B2
公开(公告)日：2012-03-13
申请号：US11782233
申请日：2007-07-24
申请人： Taro Yamamoto , Hitoshi Kosugi , Yoshiaki Yamada , Yasuhito Saiga
发明人： Taro Yamamoto , Hitoshi Kosugi , Yoshiaki Yamada , Yasuhito Saiga
IPC分类号： G03F7/26
CPC分类号： G03F7/38 , G03F7/2041 , G03F7/70341
摘要： A pattern forming method includes forming a resist film or sequentially forming a resist film and a protection film in this order on a surface of a substrate; then, performing immersion light exposure that includes immersing the resist film or the resist film and the protection film formed on the substrate in a liquid during light exposure, thereby forming a predetermined light exposure pattern on the resist film; and performing a development process of the light exposure pattern by use of a development liquid, thereby forming a predetermined resist pattern. After the immersion light exposure and before the development process, the method further includes performing a hydrophilic process of turning a surface of the resist film or the protection film serving as a substrate surface into a hydrophilic state to allow the substrate surface to be wetted with the development liquid overall.
摘要翻译：图案形成方法包括在基板的表面上依次形成抗蚀剂膜或依次形成抗蚀剂膜和保护膜; 然后，在曝光期间进行浸渍曝光，其中包括将抗蚀剂膜或抗蚀剂膜和形成在基板上的保护膜浸入液体中，从而在抗蚀剂膜上形成预定的曝光图案; 并通过使用显影液进行曝光图案的显影处理，由此形成预定的抗蚀剂图案。在浸没曝光之后和显影处理之前，该方法还包括进行将抗蚀剂膜或用作基板表面的保护膜的表面转动成亲水性的亲水处理，以允许基板表面被开发液体整体。

2. 发明授权

US07924396B2 Coating/developing apparatus and pattern forming method 有权
标题翻译：涂布/显影装置和图案形成方法
公开(公告)号：US07924396B2
公开(公告)日：2011-04-12
申请号：US11958798
申请日：2007-12-18
申请人： Hisashi Kawano , Junichi Kitano , Hitoshi Kosugi , Koichi Hontake , Masashi Enomoto
发明人： Hisashi Kawano , Junichi Kitano , Hitoshi Kosugi , Koichi Hontake , Masashi Enomoto
IPC分类号： G03B27/32 , G03B5/00
CPC分类号： G03F7/162 , G03F7/168 , G03F7/3021
摘要： A coating/developing apparatus includes a process section including processing units to perform a series of processes for resist coating and development; an interface section disposed between the process section and immersion light exposure apparatus; and a drying section disposed in the interface section to dry the substrate immediately after the immersion light exposure process. The drying section includes a process container configured to accommodate the substrate, a substrate support member configured to place the substrate thereon, a temperature-adjusted gas supply mechanism configured to supply a temperature-adjusted gas into the process container, and an exhaust mechanism configured to exhaust the process container. The drying section is arranged to dry the substrate by supplying the temperature-adjusted gas into the process container with the substrate placed on the substrate support member, while exhausting the process container.
摘要翻译：一种涂布/显影装置，包括：处理部，包括进行抗蚀剂涂布和显影的一系列处理的处理单元; 布置在处理部分和浸没曝光装置之间的界面部分; 以及设置在界面部分中的干燥部分，以在浸没曝光处理之后立即干燥基板。所述干燥部包括被配置为容纳所述基板的处理容器，被配置为将所述基板放置在其上的基板支撑部件，配置成将经温度调节的气体供给到所述处理容器中的温度调节气体供给机构，以及配置为排出过程容器。干燥部被布置成通过将衬底放置在基板支撑构件上的温度调节气体供给到处理容器中，同时排出处理容器来干燥基板。

3. 发明授权

US06267516B1 Developing apparatus and developing nozzle 有权
标题翻译：开发设备和开发喷嘴
公开(公告)号：US06267516B1
公开(公告)日：2001-07-31
申请号：US09583384
申请日：2000-05-30
申请人： Shuichi Nagamine , Masami Akimoto , Akira Nishiya , Hitoshi Kosugi
发明人： Shuichi Nagamine , Masami Akimoto , Akira Nishiya , Hitoshi Kosugi
IPC分类号： G03D500
CPC分类号： G03F7/3021
摘要： A developing apparatus comprises a table on which is disposed a substrate having a resist coating film formed thereon, a nozzle for supplying a developing solution to the substrate disposed on the table, a liquid supplying mechanism for supplying the developing solution to the nozzle, and a moving mechanism for relatively moving the nozzle and the substrate, wherein the nozzle includes a liquid inlet port communicating with the liquid supplying mechanism, a liquid reservoir for temporarily storing the developing solution supplied from the liquid supplying mechanism through the liquid inlet port, a narrow passageway communicating with the bottom portion of the liquid reservoir to cause pressure loss of the developing solution coming from the liquid reservoir, a linear liquid discharge section having a discharge port passageway communicating with the narrow passageway, and a buffering member arranged within the discharge port passageway and in the vicinity of the outlet port of the narrow passageway, the buffering member weakening the strength of the developing solution coming out of the narrow passageway so as to weaken the impact given by the developing solution discharged from the discharge port to the resist coating film.
摘要翻译：一种显影装置，包括：台面，其上形成有抗蚀剂涂膜的基板，用于将显影液供给到设置在工作台上的基板的喷嘴;液体供给机构，用于向喷嘴供给显影液;以及用于相对移动所述喷嘴和所述基板的移动机构，其中所述喷嘴包括与所述液体供给机构连通的液体入口，用于临时存储从所述液体供给机构经由所述液体入口供给的显影液的液体储存器，与储液器的底部连通，引起来自液体储存器的显影液的压力损失，具有与窄通道连通的排出口通道的线性液体排出部，以及设置在排出口通路内的缓冲部件，在小口的出口附近 w通道，缓冲构件削弱了从狭窄通道出来的显影液的强度，从而削弱了从排出口排出到抗蚀剂涂膜的显影液所产生的冲击。

4. 发明授权

US08889337B2 Film forming method, film forming apparatus and pattern forming method 有权
标题翻译：成膜方法，成膜装置和图案形成方法
公开(公告)号：US08889337B2
公开(公告)日：2014-11-18
申请号：US11934308
申请日：2007-11-02
申请人： Hitoshi Kosugi , Taro Yamamoto , Yoshiaki Yamada , Yasuhito Saiga
发明人： Hitoshi Kosugi , Taro Yamamoto , Yoshiaki Yamada , Yasuhito Saiga
IPC分类号： G03F7/09 , B05C11/02 , G03F7/20 , G03F7/11 , H01L21/67
CPC分类号： G03F7/2041 , G03F7/11 , H01L21/6708 , H01L21/67115 , H01L21/6715
摘要： Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure.The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.
摘要翻译：提供这样的成膜方法，其可以防止在浸没曝光期间从基底上包括抗蚀剂膜的表面膜的剥离。成膜方法包括以下步骤：在晶片的表面上形成包括抗蚀剂膜和覆盖抗蚀剂膜的保护膜的表面膜，以及通过将边缘帽膜材料供给到至少包括晶片的周边以及诸如保护膜的表面膜的周边。

5. 发明授权

US08420303B2 Substrate processing method, computer-readable storage medium and substrate processing system 有权
标题翻译：基板处理方法，计算机可读存储介质和基板处理系统
公开(公告)号：US08420303B2
公开(公告)日：2013-04-16
申请号：US12957442
申请日：2010-12-01
申请人： Yoshiaki Yamada , Keiichi Tanaka , Hitoshi Kosugi
发明人： Yoshiaki Yamada , Keiichi Tanaka , Hitoshi Kosugi
IPC分类号： G03F7/26
CPC分类号： G03F7/38
摘要： A PEB unit has a first heat plate and a second heat plate. After an exposure process for a resist film for EUV on a wafer and before a development process, the PEB unit heats the wafer through the first heat plate at a first heating temperature. A heating time through the first heat plate is not less than 10 seconds and not more than 30 seconds. Thereafter, the PEB unit heats the wafer through the second heat plate at a second heating temperature lower than the first heating temperature. A temperature difference between the first heating temperature and the second heating temperature is not less than 20° C. and not more than 60° C.
摘要翻译： PEB单元具有第一加热板和第二加热板。在晶片上并且在显影处理之前用于EUV的抗蚀剂膜的曝光处理之后，PEB单元在第一加热温度下通过第一加热板加热晶片。通过第一加热板的加热时间不小于10秒且不超过30秒。此后，PEB单元在低于第一加热温度的第二加热温度下通过第二加热板加热晶片。第一加热温度和第二加热温度之间的温差不小于20℃且不大于60℃。

6. 发明申请

US20110143290A1 DEVELOPING TREATMENT METHOD AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：开发处理方法和计算机可读存储介质
公开(公告)号：US20110143290A1
公开(公告)日：2011-06-16
申请号：US12963832
申请日：2010-12-09
申请人： Keiichi TANAKA , Yoshiaki YAMADA , Hitoshi KOSUGI
发明人： Keiichi TANAKA , Yoshiaki YAMADA , Hitoshi KOSUGI
IPC分类号： G03C5/00
CPC分类号： G03F7/3021
摘要： An extreme ultra violet (EUV) resist film is formed on a wafer W, and then a EUV light is radiated onto the EUV resist film formed on the wafer W so that a predetermined pattern is selectively exposed on the EUV resist film. Thereafter, a developing solution with a concentration of less than 2.38% by weight, whose temperature is adjusted to be 5° C. or higher and less than 23° C. in a supplying equipment group 138, is dispensed from a developing solution supply nozzle 133 to the EUV resist film formed on the wafer W so that the EUV resist film is subject to development. In such a case, a time period during which the developing treatment is performed using the developing solution may be set to fall within the range of 10 seconds or higher to less than 30 seconds. And then, pure water is supplied from a pure water supply nozzle 140 onto the wafer W to clean the wafer. The time period during which the pure water is supplied is set to fall within the range of 30 seconds or below.
摘要翻译：在晶片W上形成极紫外（EUV）抗蚀剂膜，然后将EUV光照射到形成在晶片W上的EUV抗蚀剂膜上，使得在EUV抗蚀剂膜上选择性地暴露预定图案。此后，从供给设备组138中将温度调节为5℃以上且小于23℃的浓度小于2.38重量％的显影液从显影液供给喷嘴 133到形成在晶片W上的EUV抗蚀剂膜，使得EUV抗蚀剂膜被显影。在这种情况下，使用显影液进行显影处理的时间段可以设定在10秒以上至小于30秒的范围内。然后，纯水从纯水供应喷嘴140供应到晶片W上以清洁晶片。将纯水供给的时间设定为30秒以下的范围。

7. 发明申请

US20110143289A1 SUBSTRATE PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：基板处理方法，计算机可读存储介质和基板处理系统
公开(公告)号：US20110143289A1
公开(公告)日：2011-06-16
申请号：US12957442
申请日：2010-12-01
申请人： Yoshiaki YAMADA , Keiichi TANAKA , Hitoshi KOSUGI
发明人： Yoshiaki YAMADA , Keiichi TANAKA , Hitoshi KOSUGI
IPC分类号： G03F7/00 , G03B27/52
CPC分类号： G03F7/38
摘要： A PEB unit has a first heat plate and a second heat plate. After an exposure process for a resist film for EUV on a wafer and before a development process, the PEB unit heats the wafer through the first heat plate at a first heating temperature. A heating time through the first heat plate is not less than 10 seconds and not more than 30 seconds. Thereafter, the PEB unit heats the wafer through the second heat plate at a second heating temperature lower than the first heating temperature. A temperature difference between the first heating temperature and the second heating temperature is not less than 20° C. and not more than 60° C.
摘要翻译： PEB单元具有第一加热板和第二加热板。在晶片上并且在显影处理之前用于EUV的抗蚀剂膜的曝光处理之后，PEB单元在第一加热温度下通过第一加热板加热晶片。通过第一加热板的加热时间不小于10秒且不超过30秒。此后，PEB单元在低于第一加热温度的第二加热温度下通过第二加热板加热晶片。第一加热温度和第二加热温度之间的温差不小于20℃且不大于60℃。

8. 发明申请

US20080118861A1 FILM FORMING METHOD, FILM FORMING APPARATUS AND PATTERN FORMING METHOD 有权
标题翻译：薄膜成型方法，薄膜成型装置和图案形成方法
公开(公告)号：US20080118861A1
公开(公告)日：2008-05-22
申请号：US11934308
申请日：2007-11-02
申请人： Hitoshi Kosugi , Taro Yamamoto , Yoshiaki Yamada , Yasuhito Saiga
发明人： Hitoshi Kosugi , Taro Yamamoto , Yoshiaki Yamada , Yasuhito Saiga
IPC分类号： G03C1/00
CPC分类号： G03F7/2041 , G03F7/11 , H01L21/6708 , H01L21/67115 , H01L21/6715
摘要： Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure.The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.
摘要翻译：提供这样的成膜方法，其可以防止在浸没曝光期间从基底上包括抗蚀剂膜的表面膜的剥离。成膜方法包括以下步骤：在晶片的表面上形成包括抗蚀剂膜和覆盖抗蚀剂膜的保护膜的表面膜，以及通过将边缘帽膜材料供给到至少包括晶片的周边以及诸如保护膜的表面膜的周边。

9. 发明授权

US06780940B2 Adhesive resin composition and method for separating adherends bonded together by the composition 失效
标题翻译：粘合树脂组合物和通过该组合物分离粘合在一起的被粘物的方法
公开(公告)号：US06780940B2
公开(公告)日：2004-08-24
申请号：US09960935
申请日：2001-09-25
申请人： Nori Yoshihara , Kenji Ohama , Satoshi Sakai , Hitoshi Kosugi , Koji Nakanishi
发明人： Nori Yoshihara , Kenji Ohama , Satoshi Sakai , Hitoshi Kosugi , Koji Nakanishi
IPC分类号： C08K310
CPC分类号： C09J5/06 , C09J11/04 , C09J2400/143 , Y10T156/1153
摘要： The present invention relates to an adhesive resin composition comprising a heat-generating material (A) which generates heat when subjected to high frequency induction and a thermoplastic resin (B) modified with a monomer having a functional group which reacts with an inorganic, the thermoplastic resin (B) having a melting point ranging from 90° C. to 200° C. The present invention also relates to a method for separating a bonded article into adherends, the method comprising detaching by induction heating the bonded portions of adherends bonded together by the thermoplastic resin composition comprising a heat-generating material (A) which generates heat when subjected to high frequency induction and a thermoplastic resin (B) modified with a monomer having a functional group which reacts with an inorganic substance and has a melting point ranging from 90° C. to 200° C.
摘要翻译：本发明涉及一种粘合剂树脂组合物，其包含在进行高频感应时产生热量的发热材料（A）和用具有与无机物反应的官能团的单体改性的热塑性树脂（B），热塑性树脂熔点为90℃〜200℃的树脂（B）。本发明还涉及将粘合体分离成被粘物的方法，该方法包括：通过感应加热来分离粘合物的粘合部分，所述热塑性树脂组合物包含在高频感应时产生热量的发热材料（A）和用具有与无机物质反应的官能团的单体改性的热塑性树脂（B） 90°C至200°C

10. 发明授权

US08376637B2 Photoresist coating and developing apparatus, substrate transfer method and interface apparatus 有权
标题翻译：光刻胶涂布和显影装置，基片转印方法和界面装置
公开(公告)号：US08376637B2
公开(公告)日：2013-02-19
申请号：US12940101
申请日：2010-11-05
申请人： Yoshiaki Yamada , Yuichi Yamamoto , Hitoshi Kosugi , Seiji Fujimoto
发明人： Yoshiaki Yamada , Yuichi Yamamoto , Hitoshi Kosugi , Seiji Fujimoto
IPC分类号： G03D5/00
CPC分类号： H01L21/67109 , H01L21/67196 , H01L21/67201
摘要： A photoresist coating and developing apparatus 1 includes a photoresist film forming unit that forms a photoresist film on a substrate; a heat treatment unit that heats the substrate on which the photoresist film is formed by the photoresist film forming unit; a cooling unit that cools the substrate, on which the photoresist film is formed and which is heated by the heat treatment unit, to normal temperature; a heating unit 61 that heats the substrate, which is cooled to normal temperature by the cooling unit, to a predetermined temperature; a load-lock chamber L1 that unloads the substrate under depressurized atmosphere to expose the photoresist film; and a transfer device 62 that transfers the substrate from the heating unit 61 to the load-lock chamber L1.
摘要翻译：光致抗蚀剂涂层显影装置1包括在基板上形成光致抗蚀剂膜的光致抗蚀剂膜形成单元; 热处理单元，其通过光致抗蚀剂膜形成单元加热其上形成有光致抗蚀剂膜的基板; 冷却单元，其将形成有光致抗蚀剂膜的基板和由热处理单元加热的基板冷却至常温; 加热单元61，其通过冷却单元将被冷却至常温的基板加热到预定温度; 负载锁定室L1，其在减压气氛下卸载基板以露出光致抗蚀剂膜; 以及将基板从加热单元61传递到加载锁定室L1的转移装置62。

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