专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09147582B2 Manufacturing methods for semiconductor devices 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US09147582B2
公开(公告)日：2015-09-29
申请号：US13329418
申请日：2011-12-19
申请人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
发明人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
IPC分类号： H01L31/0296 , H01L21/477 , H01L31/18 , H01L31/0392
CPC分类号： H01L21/477 , H01L31/03925 , H01L31/1828 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要： A method of manufacturing semiconductor assemblies is provided. The manufacturing method includes thermally processing a first semiconductor assembly comprising a first semiconductor layer disposed on a first support and thermally processing a second semiconductor assembly comprising a second semiconductor layer disposed on a second support. The first and second semiconductor assemblies are thermally processed simultaneously, and the first and second semiconductor assemblies are arranged such that the first semiconductor layer faces the second semiconductor layer during the thermal processing.
摘要翻译：提供一种制造半导体组件的方法。该制造方法包括热处理包括设置在第一支撑件上的第一半导体层的第一半导体组件，并且热处理包括设置在第二支撑件上的第二半导体层的第二半导体组件。第一和第二半导体组件被同时热处理，并且第一和第二半导体组件被布置成使得第一半导体层在热处理期间面向第二半导体层。

2. 发明授权

US08476105B2 Method of making a transparent conductive oxide layer and a photovoltaic device 有权
标题翻译：制造透明导电氧化物层和光伏器件的方法
公开(公告)号：US08476105B2
公开(公告)日：2013-07-02
申请号：US12976166
申请日：2010-12-22
申请人： Holly Ann Blaydes , George Theodore Dalakos , David William Vernooy , Allan Robert Northrup , Juan Carlos Rojo , Peter Joel Meschter , Hongying Peng , Hongbo Cao , Yangang Andrew Xi , Robert Dwayne Gossman , Anping Zhang
发明人： Holly Ann Blaydes , George Theodore Dalakos , David William Vernooy , Allan Robert Northrup , Juan Carlos Rojo , Peter Joel Meschter , Hongying Peng , Hongbo Cao , Yangang Andrew Xi , Robert Dwayne Gossman , Anping Zhang
IPC分类号： H01L31/073 , H01L31/0224 , C23C14/00 , H01L31/18 , C23C14/08
CPC分类号： H01L31/1884 , C23C14/0036 , C23C14/08 , C23C14/35 , C23C14/548 , C23C14/56 , C23C14/5806 , H01L31/022466 , H01L31/073 , H01L31/1836 , Y02E10/543
摘要： In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10−4 Ohm-cm. Method of making a photovoltaic device is also provided.
摘要翻译：在本发明的一个方面，提供了一种方法。该方法包括在支撑体上设置基本上非晶态的氧化镉锡氧化物层; 并且在基本上不含镉的气氛中从外部源热处理基本无定形的镉锡氧化物层以形成透明层，其中该透明层的电阻率小于约2×10 -4 Ohm-cm。还提供了制造光伏器件的方法。

3. 发明申请

US20130109124A1 METHODS OF MAKING A TRANSPARENT LAYER AND A PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：制造透明层和光伏器件的方法
公开(公告)号：US20130109124A1
公开(公告)日：2013-05-02
申请号：US13284037
申请日：2011-10-28
申请人： Hongying Peng , Juan Carlos Rojo , Hongbo Cao , George Theodore Dalakos , Holly Ann Blaydes , David William Vernooy , Mark Jeffrey Pavol , Jae Hyuk Her , Hong Piao , Robert Dwayne Gossman , Scott Daniel Feldman-Peabody , Yangang Andrew Xi
发明人： Hongying Peng , Juan Carlos Rojo , Hongbo Cao , George Theodore Dalakos , Holly Ann Blaydes , David William Vernooy , Mark Jeffrey Pavol , Jae Hyuk Her , Hong Piao , Robert Dwayne Gossman , Scott Daniel Feldman-Peabody , Yangang Andrew Xi
IPC分类号： H01L31/18 , H01L31/0296 , H01L31/0224
CPC分类号： H01L31/1884 , C23C14/086 , C23C14/5806 , Y02E10/50
摘要： In one aspect of the present invention, a method is included. The method includes thermally processing an assembly to form at least one transparent layer. The assembly includes a first panel including a first layer disposed on a first support and a second panel including a second layer disposed on a second support, wherein the second panel faces the first panel, and wherein the first layer and the second layer include substantially amorphous cadmium tin oxide. Method of making a photovoltaic device is also included.
摘要翻译：在本发明的一个方面，包括一种方法。该方法包括热处理组件以形成至少一个透明层。所述组件包括第一面板，其包括设置在第一支撑件上的第一层和包括设置在第二支撑件上的第二层的第二面板，其中所述第二面板面向所述第一面板，并且其中所述第一层和所述第二层包括基本上无定形的氧化镉锡。还包括制造光伏器件的方法。

4. 发明授权

US08033885B2 System and method for applying a conformal barrier coating with pretreating 有权
标题翻译：用预应力施加保形屏障涂层的系统和方法
公开(公告)号：US08033885B2
公开(公告)日：2011-10-11
申请号：US12242399
申请日：2008-09-30
申请人： Ahmet Gun Erlat , George Theodore Dalakos , Min Yan , Shelia Neumann Tandon , Brian Joseph Scherer
发明人： Ahmet Gun Erlat , George Theodore Dalakos , Min Yan , Shelia Neumann Tandon , Brian Joseph Scherer
IPC分类号： H05B33/04
CPC分类号： C23C16/0245 , B05D1/62 , C23C16/029 , H01L51/5253 , H01L2251/5346 , Y10T428/24612
摘要： In a method for depositing a barrier coating, a device is provided comprising a first portion and a second portion where a surface of the second portion is in a shadow zone. The device is pretreated wherein the pretreating alters a deposition rate of the barrier coating on a surface exposed to the pretreating. The shadow zone is substantially unexposed to the pretreating. A barrier coating is deposited wherein the barrier coating substantially conforms to a profile of the device. The coating may be a graded-composition barrier coating wherein a composition of the coating varies substantially continuously across a thickness thereof. The first portion may include a flexible, substantially transparent substrate. The second portion may include an electronic device. The barrier coating and first portion may encapsulate the second portion. The method is a single, commercially advantageous, barrier deposition process, enabling increased product throughput and low process tact time.
摘要翻译：在用于沉积阻挡涂层的方法中，提供了包括第一部分和第二部分的装置，其中第二部分的表面处于阴影区域。该装置被预处理，其中预处理改变了暴露于预处理的表面上的阻挡涂层的沉积速率。阴影区域基本上未被暴露于预处理。沉积阻挡涂层，其中阻挡涂层基本上符合设备的轮廓。涂层可以是梯度组合物阻挡涂层，其中涂层的组合物在其厚度上基本连续地变化。第一部分可以包括柔性的，基本上透明的基底。第二部分可以包括电子设备。阻挡涂层和第一部分可以封装第二部分。该方法是单一的，商业上有利的阻隔沉积工艺，能够提高产品生产量和低工艺节拍时间。

5. 发明申请

US20100080929A1 SYSTEM AND METHOD FOR APPLYING A CONFORMAL BARRIER COATING 审中-公开
标题翻译：用于施加一致性障碍物涂层的系统和方法
公开(公告)号：US20100080929A1
公开(公告)日：2010-04-01
申请号：US12242443
申请日：2008-09-30
申请人： Ahmet Gun ERLAT , George Theodore Dalakos , Min Yan , Sheila Neumann Tandon , Brian Joseph Scherer
发明人： Ahmet Gun ERLAT , George Theodore Dalakos , Min Yan , Sheila Neumann Tandon , Brian Joseph Scherer
IPC分类号： C23C14/34 , C23C16/04 , C23C16/513
CPC分类号： C23C16/029 , C23C16/50
摘要： An improvement of a baseline method for depositing a coating on a device having a surface where the surface includes a first portion and a second portion, where the second portion is in a shadow zone, and where the coating is deposited using a first predetermined set of process parameters having a first ratio of a thickness of the coating on the second portion to a thickness of the coating on the first portion. In the improved method, the coating is deposited using a second predetermined set of process parameters such that the coating substantially conforms to a profile of the device and a second ratio of a thickness of the coating on the second portion to a thickness of the coating on the first portion is greater than the first ratio. The method is a single, commercially advantageous deposition process, enabling increased product throughput and low process tact time.
摘要翻译：一种用于在具有表面的装置上沉积涂层的基线方法的改进，其中所述表面包括第一部分和第二部分，其中第二部分处于阴影区域，并且其中涂层使用第一预定组工艺参数具有第二部分上的涂层的厚度与第一部分上的涂层的厚度的第一比率。在改进的方法中，使用第二预定的一组工艺参数沉积涂层，使得涂层基本上符合装置的轮廓，并且第二部分上的涂层的厚度与涂层的厚度的第二比率第一部分大于第一比例。该方法是单一的，商业上有利的沉积工艺，能够提高产品产量和低的工艺节拍时间。

6. 发明授权

US07214406B2 Low-temperature plasma deposited hydrogenated amorphous germanium carbon abrasion-resistant coatings 有权
标题翻译：低温等离子体沉积氢化无定形锗碳耐磨涂层
公开(公告)号：US07214406B2
公开(公告)日：2007-05-08
申请号：US10991985
申请日：2004-11-18
申请人： James Neil Johnson , Kevin Warner Flanagan , George Theodore Dalakos
发明人： James Neil Johnson , Kevin Warner Flanagan , George Theodore Dalakos
IPC分类号： B05D5/06
CPC分类号： C23C16/32 , C23C16/30 , G02B1/105 , G02B1/14 , Y10T428/265 , Y10T428/30
摘要： A method of forming a hydrogenated amorphous germanium carbon (α-GeCx:H) film on a surface of an infrared (IR) transmissive material such as a chalcogenide is provided. The method includes positioning an IR transmissive material in a reactor chamber of a parallel plate plasma reactor and thereafter depositing a hydrogenated amorphous germanium carbon (α-GeCx:H) film on a surface of the IR transmissive material. The depositing is performed at a substrate temperature of about 130° C. or less and in the presence of a plasma which is derived from a gas mixture including a source of germanium, an inert gas, and optionally hydrogen. Optical transmissive components, such as IR sensors and windows, that have improved abrasion-resistance are also provided.
摘要翻译：提供了在红外（IR）透射材料如硫族化物的表面上形成氢化无定形锗碳（α-GeC x H x：H）膜的方法。该方法包括将IR透射材料定位在平行板等离子体反应器的反应室中，然后在IR透射材料的表面上沉积氢化的无定形锗碳（α-GeC x H x H：H）膜。在约130℃或更低的衬底温度下和在源自包含锗源，惰性气体和任选的氢的气体混合物的等离子体存在下进行沉积。还提供了具有改善的耐磨性的光学透射组件，例如IR传感器和窗户。

7. 发明申请

US20130157405A1 MANUFACTURING METHODS FOR SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20130157405A1
公开(公告)日：2013-06-20
申请号：US13329418
申请日：2011-12-19
申请人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
发明人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
IPC分类号： H01L31/0296
CPC分类号： H01L21/477 , H01L31/03925 , H01L31/1828 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要： A method of manufacturing semiconductor assemblies is provided. The manufacturing method includes thermally processing a first semiconductor assembly comprising a first semiconductor layer disposed on a first support and thermally processing a second semiconductor assembly comprising a second semiconductor layer disposed on a second support. The first and second semiconductor assemblies are thermally processed simultaneously, and the first and second semiconductor assemblies are arranged such that the first semiconductor layer faces the second semiconductor layer during the thermal processing.
摘要翻译：提供一种制造半导体组件的方法。该制造方法包括热处理包括设置在第一支撑件上的第一半导体层的第一半导体组件，并且热处理包括设置在第二支撑件上的第二半导体层的第二半导体组件。第一和第二半导体组件被同时热处理，并且第一和第二半导体组件被布置成使得第一半导体层在热处理期间面向第二半导体层。

8. 发明申请

US20120219791A1 COATED POLYMER DIELECTRIC FILM 失效
标题翻译：涂层聚合物电介质膜
公开(公告)号：US20120219791A1
公开(公告)日：2012-08-30
申请号：US13036089
申请日：2011-02-28
申请人： Daniel Qi Tan , George Theodore Dalakos , Yang Cao , Qin Chen , Ri-an Zhao
发明人： Daniel Qi Tan , George Theodore Dalakos , Yang Cao , Qin Chen , Ri-an Zhao
IPC分类号： B32B3/00 , B32B9/04 , B32B27/36 , B32B9/00 , B32B27/00
CPC分类号： H01B3/306 , H01B3/42 , H01G4/18 , Y10T428/26 , Y10T428/265 , Y10T428/266 , Y10T428/31507 , Y10T428/31667 , Y10T428/31721 , Y10T428/31855
摘要： Present invention provides a film and an article including the film. The film includes first layer, second layer and third layer. The first layer includes a polymer dielectric material. The second layer is disposed on at least one surface of the first layer and includes inorganic oxide dielectric material. The third layer is disposed on the first or second layer and includes a nitride or oxynitride material.
摘要翻译：本发明提供了一种包括该膜的膜和物品。该膜包括第一层，第二层和第三层。第一层包括聚合物电介质材料。第二层设置在第一层的至少一个表面上，并且包括无机氧化物介电材料。第三层设置在第一层或第二层上，并且包括氮化物或氧氮化物材料。

9. 发明申请

US20080009417A1 COATING COMPOSITION, ARTICLE, AND ASSOCIATED METHOD 审中-公开
标题翻译：涂料组合物，制品及相关方法
公开(公告)号：US20080009417A1
公开(公告)日：2008-01-10
申请号：US11560953
申请日：2006-11-17
申请人： Victor Lienkong Lou , George Theodore Dalakos , Marc Schaepkens
发明人： Victor Lienkong Lou , George Theodore Dalakos , Marc Schaepkens
IPC分类号： H01L39/24
CPC分类号： H01L21/68757 , C03C3/062 , C03C3/095 , C03C4/20
摘要： A processing apparatus for use in a corrosive operating environment at a temperature range of 25-1500° C. is provided. The apparatus has protective coating structure that includes a glassy material. The glassy material includes at least one of yttrium, cerium, or gadolinium; and aluminum and silicon. The coating composition resists etching by a harsh environment.
摘要翻译：提供一种用于在25-1500℃的温度范围内的腐蚀性操作环境中的加工设备。该装置具有包括玻璃状材料的保护涂层结构。玻璃状材料包括钇，铈或钆中的至少一种; 和铝和硅。涂料组合物可以抵抗恶劣环境的蚀刻。

10. 发明授权

US06844070B2 Low-temperature plasma deposited hydrogenated amorphous germanium carbon abrasion-resistant coatings 失效
标题翻译：低温等离子体沉积氢化无定形锗碳耐磨涂层
公开(公告)号：US06844070B2
公开(公告)日：2005-01-18
申请号：US10232462
申请日：2002-08-30
申请人： James Neil Johnson , Kevin Warner Flanagan , George Theodore Dalakos
发明人： James Neil Johnson , Kevin Warner Flanagan , George Theodore Dalakos
IPC分类号： C23C16/30 , C23C16/32 , G02B1/10 , B32B9/00
CPC分类号： C23C16/32 , C23C16/30 , G02B1/105 , G02B1/14 , Y10T428/265 , Y10T428/30
摘要： A method of forming a hydrogenated amorphous germanium carbon (a-GeCx:H) film on a surface of an infrared (IR) transmissive material such as a chalcogenide is provided. The method includes positioning an IR transmissive material in a reactor chamber of a parallel plate plasma reactor and thereafter depositing a hydrogenated amorphous germanium carbon (a-GeCx:H) film on a surface of the IR transmissive material. The depositing is performed at a substrate temperature of about 130° C. or less and in the presence of a plasma which is derived from a gas mixture including a source of germanium, an inert gas, and optionally hydrogen. Optical transmissive components, such as IR sensors and windows, that have improved abrasion-resistance are also provided.
摘要翻译：提供了在红外（IR）透射材料如硫族化物的表面上形成氢化无定形锗碳（a-GeCx：H）膜的方法。该方法包括将IR透射材料定位在平行板等离子体反应器的反应室中，然后在IR透射材料的表面上沉积氢化无定形锗碳（a-GeCx：H）膜。在约130℃或更低的衬底温度下和在源自包含锗源，惰性气体和任选的氢的气体混合物的等离子体存在下进行沉积。还提供了具有改善的耐磨性的光学透射组件，例如IR传感器和窗户。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式