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1. 发明申请

US20130157405A1 MANUFACTURING METHODS FOR SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20130157405A1
公开(公告)日：2013-06-20
申请号：US13329418
申请日：2011-12-19
申请人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
发明人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
IPC分类号： H01L31/0296
CPC分类号： H01L21/477 , H01L31/03925 , H01L31/1828 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要： A method of manufacturing semiconductor assemblies is provided. The manufacturing method includes thermally processing a first semiconductor assembly comprising a first semiconductor layer disposed on a first support and thermally processing a second semiconductor assembly comprising a second semiconductor layer disposed on a second support. The first and second semiconductor assemblies are thermally processed simultaneously, and the first and second semiconductor assemblies are arranged such that the first semiconductor layer faces the second semiconductor layer during the thermal processing.
摘要翻译：提供一种制造半导体组件的方法。该制造方法包括热处理包括设置在第一支撑件上的第一半导体层的第一半导体组件，并且热处理包括设置在第二支撑件上的第二半导体层的第二半导体组件。第一和第二半导体组件被同时热处理，并且第一和第二半导体组件被布置成使得第一半导体层在热处理期间面向第二半导体层。

2. 发明授权

US09147582B2 Manufacturing methods for semiconductor devices 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US09147582B2
公开(公告)日：2015-09-29
申请号：US13329418
申请日：2011-12-19
申请人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
发明人： Jinbo Cao , Bastiaan Arie Korevaar , George Theodore Dalakos , Aharon Yakimov , Scott D. Feldman-Peabody , Dalong Zhong , Juan Carlos Rojo
IPC分类号： H01L31/0296 , H01L21/477 , H01L31/18 , H01L31/0392
CPC分类号： H01L21/477 , H01L31/03925 , H01L31/1828 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要： A method of manufacturing semiconductor assemblies is provided. The manufacturing method includes thermally processing a first semiconductor assembly comprising a first semiconductor layer disposed on a first support and thermally processing a second semiconductor assembly comprising a second semiconductor layer disposed on a second support. The first and second semiconductor assemblies are thermally processed simultaneously, and the first and second semiconductor assemblies are arranged such that the first semiconductor layer faces the second semiconductor layer during the thermal processing.
摘要翻译：提供一种制造半导体组件的方法。该制造方法包括热处理包括设置在第一支撑件上的第一半导体层的第一半导体组件，并且热处理包括设置在第二支撑件上的第二半导体层的第二半导体组件。第一和第二半导体组件被同时热处理，并且第一和第二半导体组件被布置成使得第一半导体层在热处理期间面向第二半导体层。

3. 发明申请

US20130192667A1 PHOTOVOLTAIC DEVICES AND METHOD OF MAKING 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US20130192667A1
公开(公告)日：2013-08-01
申请号：US13362813
申请日：2012-01-31
申请人： Jinbo Cao , Bastiaan Arie Korevaar , Dalong Zhong , Juan Carlos Rojo , Qianqian Xin , Aharon Yakimov
发明人： Jinbo Cao , Bastiaan Arie Korevaar , Dalong Zhong , Juan Carlos Rojo , Qianqian Xin , Aharon Yakimov
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/073 , H01L31/0749 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： A photovoltaic device is presented. The photovoltaic device includes a transparent conductive layer; a window layer disposed on the transparent conductive layer; and an absorber layer disposed on the window layer. The window layer includes a low-diffusivity layer disposed adjacent to the transparent conductive layer and a high-diffusivity layer interposed between the low-diffusivity layer and the absorber layer. Method of making a photovoltaic device is also presented.
摘要翻译：介绍了光伏器件。光电器件包括透明导电层; 设置在所述透明导电层上的窗口层; 以及设置在窗口层上的吸收层。窗口层包括邻近透明导电层设置的低扩散层和介于低扩散层和吸收层之间的高扩散性层。还提出了制造光伏器件的方法。

4. 发明授权

US09496446B2 Photovoltaic devices and method of making 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US09496446B2
公开(公告)日：2016-11-15
申请号：US13362813
申请日：2012-01-31
申请人： Jinbo Cao , Bastiaan Arie Korevaar , Dalong Zhong , Juan Carlos Rojo , Qianqian Xin , Aharon Yakimov , Hongying Peng
发明人： Jinbo Cao , Bastiaan Arie Korevaar , Dalong Zhong , Juan Carlos Rojo , Qianqian Xin , Aharon Yakimov , Hongying Peng
IPC分类号： H01L31/00 , H01L31/073 , H01L31/0749
CPC分类号： H01L31/073 , H01L31/0749 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： A photovoltaic device is presented. The photovoltaic device includes a transparent conductive layer; a window layer disposed on the transparent conductive layer; and an absorber layer disposed on the window layer. The window layer includes a low-diffusivity layer disposed adjacent to the transparent conductive layer and a high-diffusivity layer interposed between the low-diffusivity layer and the absorber layer. Method of making a photovoltaic device is also presented.
摘要翻译：介绍了光伏器件。光电器件包括透明导电层; 设置在所述透明导电层上的窗口层; 以及设置在窗口层上的吸收层。窗口层包括邻近透明导电层设置的低扩散层和介于低扩散层和吸收层之间的高扩散性层。还提出了制造光伏器件的方法。

5. 发明授权

US08404877B2 Metal oxide coatings 有权
标题翻译：金属氧化物涂层
公开(公告)号：US08404877B2
公开(公告)日：2013-03-26
申请号：US11930991
申请日：2007-10-31
申请人： Sergei Kniajanski , Aharon Yakimov
发明人： Sergei Kniajanski , Aharon Yakimov
IPC分类号： C08G77/06
CPC分类号： G02B1/10 , C07F7/0836 , C07F7/0874 , C07F7/0889 , C07F9/005 , C09D1/00 , C09D5/24 , G02B1/105 , G02B27/0006 , Y10T428/31663
摘要： Compounds of formula I may be hydrolyzed to produce metal oxides wherein M is Mg, Al, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, In, Sn, Sb, La, Hf, Ta, W, Re, Os, Ir, Pt, Hg, Tl, Pb, Bi, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Th, U, or Pu; X is O1/2 or OR; R is alkyl; R1, R2, R3, R4, R5, R6, and R7 are independently H, alkoxy, C1-C10 alkyl, phenyl or R10, R11, R12, R13, R14, and R15 are independently C1-C10 alkyl or phenyl; n is equal to the value of the oxidation state of M minus q; m and p are independently 0 or an integer from 1 to 5; and q is 0, 1, 2, or 4; with the proviso that when q is 1, X is OR; and when q is 2, X is O1/2, and M is V, Cr, Mn, Fe, As, Nb, Mo, Tc, Ru, Sb, Ta, W, Re, Os, Ir, Pt, Bi, Th, U, or Pu; and when q is 4, X is O1/2, and M is Cr, Mo, W, Ru, Re, Os, U, or Pu. Articles comprising at least one metal oxide are fabricated by coating a substrate with at least one compounds of formula I before hydrolyzing, and/or heating the compound at a temperature ranging from about 50° C. to about 450° C.
摘要翻译：式I化合物可以水解生成金属氧化物，其中M是Mg，Al，Ca，Sc，Ti，V，Cr，Mn，Fe，Co，Ni，Cu，Zn，Ga，Ge，As，Y， Nb，Mo，Tc，Ru，Rh，Pd，Cd，In，Sn，Sb，La，Hf，Ta，W，Re，Os，Ir，Pt，Hg，Tl，Pb，Bi，Ce，Pr， Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Th，U或Pu; X为O1 / 2或OR; R是烷基; R1，R2，R3，R4，R5，R6和R7独立地为H，烷氧基，C1-C10烷基，苯基或R10，R11，R12，R13，R14和R15独立地为C1-C10烷基或苯基; n等于M的氧化态减去q; m和p独立地为0或1至5的整数; q为0,1,2或4; 条件是当q为1时，X为OR; 当q为2时，X为O1 / 2，M为V，Cr，Mn，Fe，As，Nb，Mo，Tc，Ru，Sb，Ta，W，Re，Os，Ir，Pt，Bi，Th ，U或Pu; 当q为4时，X为O1 / 2，M为Cr，Mo，W，Ru，Re，Os，U或Pu。包含至少一种金属氧化物的制品通过在至少一种式I化合物之前涂覆底物，然后在约50℃至约450℃的温度下水解和/或加热该化合物来制备。

6. 发明授权

US09649055B2 System and methods for physiological monitoring 有权
公开(公告)号：US09649055B2
公开(公告)日：2017-05-16
申请号：US13435966
申请日：2012-03-30
申请人： Jeffrey Michael Ashe , Aharon Yakimov , Siavash Yazdanfar , Milos Todorovic
发明人： Jeffrey Michael Ashe , Aharon Yakimov , Siavash Yazdanfar , Milos Todorovic
IPC分类号： A61B5/1455 , A61B5/029 , A61B5/08 , A61B5/024
CPC分类号： A61B5/14552 , A61B5/02427 , A61B5/029 , A61B5/08
摘要： Embodiments of devices, methods, and non-transitory computer readable media for monitoring a subject are presented. The monitoring device includes at least one sensor configured to monitor one or more physiological parameters of a subject and a processing unit operatively coupled to the sensor. The sensor comprises a plurality of radiation sources and detectors disposed on a flexible substrate in a designated physical arrangement. The processing unit is configured to dynamically configure an operational geometry of the sensor by controlling the intensity of one or more of the radiation sources and the gain of one or more of the detectors so as to satisfy at least one quality metric associated with one or more physiological parameters of the subject.

7. 发明申请

US20070125419A1 Dye sensitized solar cells having blocking layers and methods of manufacturing the same 审中-公开
标题翻译：具有阻挡层的染料敏化太阳能电池及其制造方法
公开(公告)号：US20070125419A1
公开(公告)日：2007-06-07
申请号：US11291704
申请日：2005-12-01
申请人： John Gui , Venkatesan Manivannan , Aharon Yakimov , Kevin Janora
发明人： John Gui , Venkatesan Manivannan , Aharon Yakimov , Kevin Janora
IPC分类号： H01L31/00
CPC分类号： H01L51/4226 , H01G9/2031 , H01G9/2059 , H01G9/2072 , H01G9/2095 , H01L27/302 , H01L51/0024 , H01L51/0086 , H01L51/0097 , Y02E10/542 , Y02E10/549
摘要： A solar cell having at least one hole blocking layer and at least one electron blocking layer, and methods of fabricating such devices. Specifically, a hole blocking layer is disposed between a first electrode of the solar cell and the active layer. Further, an electron blocking layer is disposed between a second electrode and the active layer. The solar cell may be formed by fabricating an anode component and a cathode component and laminating the anode component and the cathode component together.
摘要翻译：具有至少一个空穴阻挡层和至少一个电子阻挡层的太阳能电池及其制造方法。具体地说，在太阳能电池的第一电极和有源层之间设置空穴阻挡层。此外，电子阻挡层设置在第二电极和有源层之间。太阳能电池可以通过制造阳极部件和阴极部件并将阳极部件和阴极部件层叠在一起而形成。

8. 发明授权

US07652157B2 Metal oxide coatings 有权
标题翻译：金属氧化物涂层
公开(公告)号：US07652157B2
公开(公告)日：2010-01-26
申请号：US11931039
申请日：2007-10-31
申请人： Sergei Kniajanski , Aharon Yakimov
发明人： Sergei Kniajanski , Aharon Yakimov
IPC分类号： C07F7/26
CPC分类号： C07F7/0836 , C07F9/005
摘要： Compounds of formula I may be hydrolyzed to produce metal oxides wherein M is Mg, Al, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, In, Sn, Sb, La, Hf, Ta, W, Re, Os, Ir, Pt, Hg, Tl, Pb, Bi, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Th, U, or Pu; X is O1/2 or OR; R is alkyl; R1, R2, R3, R4, R5, R6, and R7 are independently H, alkoxy, C1-C10 alkyl, phenyl or R10, R11, R12, R13, R14 and R15 are independently C1-C10 alkyl or phenyl; n is equal to the the value of the oxidation state of M minus q; m and p are independently 0 or an integer from 1 to 5; and q is 0, 1, 2, or 4; with the proviso that when q is 1, X is OR; and when q is 2, X is O1/2, and M is V, Cr, Mn, Fe, As, Nb, Mo, Tc, Ru, Sb, Ta, W, Re, Os, Ir, Pt, Bi, Th, U, or Pu; and when q is 4, X is O1/2, and M is Cr, Mo, W, Ru, Re, Os, U, or Pu. Articles comprising at least one metal oxide are fabricated by coating a substrate with at least one compounds of formula I before hydrolyzing, and/or heating the compound at a temperature ranging from about 50° C. to about 450° C.
摘要翻译：式I化合物可以水解生成金属氧化物，其中M是Mg，Al，Ca，Sc，Ti，V，Cr，Mn，Fe，Co，Ni，Cu，Zn，Ga，Ge，As，Y， Nb，Mo，Tc，Ru，Rh，Pd，Cd，In，Sn，Sb，La，Hf，Ta，W，Re，Os，Ir，Pt，Hg，Tl，Pb，Bi，Ce，Pr， Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Th，U或Pu; X为O1 / 2或OR; R是烷基; R1，R2，R3，R4，R5，R6和R7独立地为H，烷氧基，C1-C10烷基，苯基或R10，R11，R12，R13，R14和R15独立地为C1-C10烷基或苯基; n等于M的氧化态减去q值; m和p独立地为0或1至5的整数; q为0,1,2或4; 条件是当q为1时，X为OR; 当q为2时，X为O1 / 2，M为V，Cr，Mn，Fe，As，Nb，Mo，Tc，Ru，Sb，Ta，W，Re，Os，Ir，Pt，Bi，Th ，U或Pu; 当q为4时，X为O1 / 2，M为Cr，Mo，W，Ru，Re，Os，U或Pu。包含至少一种金属氧化物的制品通过在至少一种式I化合物之前涂覆底物，然后在约50℃至约450℃的温度下水解和/或加热该化合物来制备。

9. 发明申请

US20090289202A1 Integrated Encapsulation Status Indicator 审中-公开
标题翻译：集成封装状态指示器
公开(公告)号：US20090289202A1
公开(公告)日：2009-11-26
申请号：US12125318
申请日：2008-05-22
申请人： Aharon Yakimov , Ahmet Gun Erlat
发明人： Aharon Yakimov , Ahmet Gun Erlat
IPC分类号： G01N21/00
CPC分类号： H01L51/5259 , G01N31/22
摘要： An integrated encapsulation status indicator comprising a reactive layer that provides a visible change upon exposure to oxygen and/or moisture and an optional inert layer, wherein both layers are encapsulated with an electronic device. Also disclosed are processes for detecting oxygen and/or moisture within an encapsulated optoelectronic device.
摘要翻译：一种集成的封装状态指示器，包括在暴露于氧气和/或水分时提供可见变化的反应层，以及任选的惰性层，其中两个层都用电子设备封装。还公开了在封装的光电子器件内检测氧和/或水分的方法。

10. 发明申请

US20080319212A1 METAL OXIDE COATINGS 有权
标题翻译：金属氧化物涂层
公开(公告)号：US20080319212A1
公开(公告)日：2008-12-25
申请号：US11931039
申请日：2007-10-31
申请人： Sergei Kniajanski , Aharon Yakimov
发明人： Sergei Kniajanski , Aharon Yakimov
IPC分类号： C07F7/02
CPC分类号： C07F7/0836 , C07F9/005
摘要： Compounds of formula I may be hydrolyzed to produce metal oxides whereinM is Mg, Al, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, In, Sn, Sb, La, Hf, Ta, W, Re, Os, Ir, Pt, Hg, Tl, Pb, Bi, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Th, U, or Pu;X is O1/2 or OR;R is alkyl;R1, R2, R3, R4, R5, R6, and R7 are independently H, alkoxy, C1-C10 alkyl, phenyl or R10, R11, R12, R13, R14 and R15 are independently C1-C10 alkyl or phenyl;n is equal to the the value of the oxidation state of M minus q;m and p are independently 0 or an integer from 1 to 5; andq is 0, 1, 2, or 4;with the proviso that when q is 1, X is OR; and when q is 2, X is O1/2, and M is V, Cr, Mn, Fe, As, Nb, Mo, Tc, Ru, Sb, Ta, W, Re, Os, Ir, Pt, Bi, Th, U, or Pu; and when q is 4, X is O1/2, and M is Cr, Mo, W, Ru, Re, Os, U, or Pu. Articles comprising at least one metal oxide are fabricated by coating a substrate with at least one compounds of formula I before hydrolyzing, and/or heating the compound at a temperature ranging from about 50° C. to about 450° C.
摘要翻译：式I化合物可以水解生成金属氧化物，其中M是Mg，Al，Ca，Sc，Ti，V，Cr，Mn，Fe，Co，Ni，Cu，Zn，Ga，Ge，As，Y， Nb，Mo，Tc，Ru，Rh，Pd，Cd，In，Sn，Sb，La，Hf，Ta，W，Re，Os，Ir，Pt，Hg，Tl，Pb，Bi，Ce，Pr， Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Th，U或Pu; X为O1 / 2或OR; R是烷基; R1，R2，R3，R4，R5，R6和R7独立地为H，烷氧基，C1-C10烷基，苯基或R10，R11，R12，R13，R14和R15独立地为C1-C10烷基或苯基; n等于M的氧化态减去q值; m和p独立地为0或1至5的整数; q为0,1,2或4; 条件是当q为1时，X为OR; 当q为2时，X为O1 / 2，M为V，Cr，Mn，Fe，As，Nb，Mo，Tc，Ru，Sb，Ta，W，Re，Os，Ir，Pt，Bi，Th ，U或Pu; 当q为4时，X为O1 / 2，M为Cr，Mo，W，Ru，Re，Os，U或Pu。包含至少一种金属氧化物的制品通过在至少一种式I化合物之前涂覆底物，然后在约50℃至约450℃的温度下水解和/或加热该化合物来制备。

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