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1. 发明授权

US09276142B2 Methods for forming a transparent oxide layer for a photovoltaic device 有权
标题翻译：用于形成用于光伏器件的透明氧化物层的方法
公开(公告)号：US09276142B2
公开(公告)日：2016-03-01
申请号：US13306392
申请日：2011-11-29
申请人： Hongying Peng , Robert Dwayne Gossman , Juan Carlos Rojo , Steven Jude Duclos
发明人： Hongying Peng , Robert Dwayne Gossman , Juan Carlos Rojo , Steven Jude Duclos
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/073 , H01L31/18
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/03925 , H01L31/073 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要： A method of manufacturing a transparent oxide layer is provided. The manufacturing method includes disposing a cadmium tin oxide layer on a support, placing the support with the cadmium tin oxide layer within a chamber of a rapid thermal annealing system, and rapidly thermally annealing the cadmium tin oxide layer by exposing the cadmium tin oxide layer to electromagnetic radiation to form the transparent oxide layer, wherein the rapid thermal anneal is performed without first pumping down the chamber.
摘要翻译：提供一种制造透明氧化物层的方法。该制造方法包括在载体上设置氧化镉锡层，将具有镉锡氧化物层的载体放置在快速热退火系统的室内，并通过将氧化镉锡层暴露于电磁辐射以形成透明氧化物层，其中快速热退火在没有首先泵送室的情况下进行。

2. 发明申请

US20140061666A1 METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE 有权
标题翻译：用于生产氮化钛的大的单晶的方法和装置
公开(公告)号：US20140061666A1
公开(公告)日：2014-03-06
申请号：US13974710
申请日：2013-08-23
申请人： Leo Schowalter , Glen A. Slack , Juan Carlos Rojo , Robert T. Bondokov , Kenneth E. Morgan , Joseph A. Smart
发明人： Leo Schowalter , Glen A. Slack , Juan Carlos Rojo , Robert T. Bondokov , Kenneth E. Morgan , Joseph A. Smart
IPC分类号： H01L29/06 , H01L29/20 , H01L29/04
CPC分类号： C30B25/16 , C30B11/003 , C30B23/00 , C30B23/025 , C30B25/10 , C30B25/14 , C30B25/20 , C30B29/403 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02634 , H01L29/04 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/32 , H01L29/66462 , H01L29/7787 , H01L33/0075 , H01L33/025 , H01L33/12 , H01L33/325 , H01L2924/0002 , Y10T428/21 , H01L2924/00
摘要： Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
摘要翻译：具有直径大于约25mm的AlN的大体积单晶和约10,000cm-2或更小的位错密度以及具有由这些本体晶体制造的任何所需晶体取向表面的高质量AlN衬底。

3. 发明申请

US20120164785A1 METHOD OF MAKING A TRANSPARENT CONDUCTIVE OXIDE LAYER AND A PHOTOVOLTAIC DEVICE 有权
标题翻译：制造透明导电氧化层和光伏器件的方法
公开(公告)号：US20120164785A1
公开(公告)日：2012-06-28
申请号：US12976166
申请日：2010-12-22
申请人： Holly Ann Blaydes , George Theodore Dalakos , David William Vernooy , Allan Robert Northrup , Juan Carlos Rojo , Peter Joel Meschter , Hongying Peng , Hongbo Cao , Yangang Andrew Xi , Robert Dwayne Gossman , Anping Zhang
发明人： Holly Ann Blaydes , George Theodore Dalakos , David William Vernooy , Allan Robert Northrup , Juan Carlos Rojo , Peter Joel Meschter , Hongying Peng , Hongbo Cao , Yangang Andrew Xi , Robert Dwayne Gossman , Anping Zhang
IPC分类号： H01L31/0264 , H01L31/0224
CPC分类号： H01L31/1884 , C23C14/0036 , C23C14/08 , C23C14/35 , C23C14/548 , C23C14/56 , C23C14/5806 , H01L31/022466 , H01L31/073 , H01L31/1836 , Y02E10/543
摘要： In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10−4 Ohm-cm. Method of making a photovoltaic device is also provided.
摘要翻译：在本发明的一个方面，提供了一种方法。该方法包括在支撑体上设置基本上非晶态的氧化镉锡氧化物层; 并且在基本上不含镉的气氛中从外部源热处理基本无定形的镉锡氧化物层以形成透明层，其中该透明层的电阻率小于约2×10 -4 Ohm-cm。还提供了制造光伏器件的方法。

4. 发明授权

US07323414B2 Method for polishing a substrate surface 有权
标题翻译：抛光基材表面的方法
公开(公告)号：US07323414B2
公开(公告)日：2008-01-29
申请号：US11363816
申请日：2006-02-28
申请人： Leo J. Schowalter , Javier Martinez Lopez , Juan Carlos Rojo , Kenneth Morgan
发明人： Leo J. Schowalter , Javier Martinez Lopez , Juan Carlos Rojo , Kenneth Morgan
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02024 , B24B37/0056 , B24B37/044 , B24B49/006 , H01L21/02052
摘要： According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.
摘要翻译：根据本发明的一个方面，提供了一种用于制备衬底表面的改进方法，其中衬底的表面准备用于化学机械抛光（CMP）工艺，在衬底的表面上进行CMP工艺，以及完成基材的表面以从CMP工艺中清除任何活性成分的基材表面。此外，提供了通过该方法制备的改进的基板。根据本发明的一个方面，可以使用允许增加AlN衬底表面质量的特定抛光材料和程序。

5. 发明授权

US09206525B2 Method for configuring a system to grow a crystal by coupling a heat transfer device comprising at least one elongate member beneath a crucible 有权
标题翻译：通过将包括至少一个细长构件的传热装置连接在坩埚下方来配置系统以生长晶体的方法
公开(公告)号：US09206525B2
公开(公告)日：2015-12-08
申请号：US13308151
申请日：2011-11-30
申请人： Arie Shahar , Eliezer Traub , Peter Rusian , Juan Carlos Rojo
发明人： Arie Shahar , Eliezer Traub , Peter Rusian , Juan Carlos Rojo
IPC分类号： C30B11/00 , C30B29/48
CPC分类号： C30B11/003 , C30B29/48 , Y10T117/1092
摘要： Systems and methods for crystal growth are provided. One method includes producing a lateral thermal profile in a furnace having a crucible therein containing a material for growing a crystal. The lateral thermal profile has three zones, wherein the first and third zones have temperatures above and below a melting point of the material, respectively, and the second zone has a plurality of temperatures with at least one temperature equal to the melting point of the material. The method further includes combining the lateral thermal profile with a vertical thermal gradient produced in the furnace, wherein the vertical thermal gradient causes a point in a bottom of the crucible located in the third zone to be the coldest point in the crucible. The method also includes transferring heat from the first and second zones to the third zone to produce a leading edge of the interface.
摘要翻译：提供了晶体生长的系统和方法。一种方法包括在其中具有坩埚的炉子中产生横向热分布，其中含有用于生长晶体的材料。横向热轮廓具有三个区域，其中第一和第三区域分别具有高于和低于材料熔点的温度，并且第二区域具有多个温度，其中至少一个温度等于材料的熔点。该方法还包括将横向热分布与在炉中产生的垂直热梯度组合，其中垂直热梯度使位于第三区域中的坩埚底部的点成为坩埚中的最冷点。该方法还包括将热从第一和第二区转移到第三区以产生界面的前缘。

6. 发明授权

US08524524B2 Methods for forming back contact electrodes for cadmium telluride photovoltaic cells 有权
标题翻译：形成碲化镉光电池的接触电极的方法
公开(公告)号：US08524524B2
公开(公告)日：2013-09-03
申请号：US12765225
申请日：2010-04-22
申请人： Bastiaan Arie Korevaar , Juan Carlos Rojo , Roman Shuba
发明人： Bastiaan Arie Korevaar , Juan Carlos Rojo , Roman Shuba
IPC分类号： H01L21/00
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/0296 , H01L31/073 , H01L33/0083 , Y02E10/543
摘要： A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.
摘要翻译：提供一种用于形成包括至少一个半导体层的光伏电池的背接触的方法。该方法包括在半导体层的表面上施加化学活性材料的连续膜并激活化学活性材料，使得活化的材料蚀刻半导体层的表面。该方法还包括从光伏电池移除活化材料的连续膜并在半导体层的蚀刻表面上沉积金属接触层。

7. 发明申请

US20130133568A1 SYSTEMS AND METHODS FOR CRYSTAL GROWTH 有权
标题翻译：晶体生长的系统和方法
公开(公告)号：US20130133568A1
公开(公告)日：2013-05-30
申请号：US13308151
申请日：2011-11-30
申请人： Arie Shahar , Eliezer Traub , Peter Rusian , Juan Carlos Rojo
发明人： Arie Shahar , Eliezer Traub , Peter Rusian , Juan Carlos Rojo
IPC分类号： C30B11/00
CPC分类号： C30B11/003 , C30B29/48 , Y10T117/1092
摘要： Systems and methods for crystal growth are provided. One method includes producing a lateral thermal profile in a furnace having a crucible therein containing a material for growing a crystal. The lateral thermal profile has three zones, wherein the first and third zones have temperatures above and below a melting point of the material, respectively, and the second zone has a plurality of temperatures with at least one temperature equal to the melting point of the material. The method further includes combining the lateral thermal profile with a vertical thermal gradient produced in the furnace, wherein the vertical thermal gradient causes a point in a bottom of the crucible located in the third zone to be the coldest point in the crucible. The method also includes transferring heat from the first and second zones to the third zone to produce a leading edge of the interface.
摘要翻译：提供了晶体生长的系统和方法。一种方法包括在其中具有坩埚的炉子中产生横向热分布，其中含有用于生长晶体的材料。横向热轮廓具有三个区域，其中第一和第三区域分别具有高于和低于材料熔点的温度，并且第二区域具有多个温度，其中至少一个温度等于材料的熔点。该方法还包括将横向热分布与在炉中产生的垂直热梯度组合，其中垂直热梯度使位于第三区域中的坩埚底部的点成为坩埚中的最冷点。该方法还包括将热从第一和第二区转移到第三区以产生界面的前缘。

8. 发明申请

US20110315220A1 PHOTOVOLTAIC CELL AND METHODS FOR FORMING A BACK CONTACT FOR A PHOTOVOLTAIC CELL 审中-公开
标题翻译：用于形成光伏电池背部接触的光电池和方法
公开(公告)号：US20110315220A1
公开(公告)日：2011-12-29
申请号：US12826234
申请日：2010-06-29
申请人： Bastiaan Arie Korevaar , Juan Carlos Rojo , Faisal Razi Ahmad , David William Vernooy
发明人： Bastiaan Arie Korevaar , Juan Carlos Rojo , Faisal Razi Ahmad , David William Vernooy
IPC分类号： H01L31/0376 , H01L31/18 , H01L31/0256
CPC分类号： H01L31/073 , H01L31/022425 , H01L31/02963 , H01L31/03925 , H01L31/1836 , Y02E10/543
摘要： Methods are provided for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer. One method includes depositing at least one back contact material on a metal contact. The back contact material comprises a metal nitride or a metal phosphide. The method further includes depositing an absorber layer comprising cadmium and tellurium above the back contact material and thermally processing the back contact material, such that the back contact material interacts with the absorber layer to form an interlayer that lowers a contact resistance for the photovoltaic cell. A photovoltaic cell is also provided and includes comprising a metal contact, at least one back contact material disposed on the metal contact, and an absorber layer comprising a material comprising cadmium and tellurium disposed above the back contact material. An interlayer is disposed between the back contact material and the absorber layer and comprises a compositionally graded layer of the back contact material and the absorber layer material. The photovoltaic cell further includes a window layer disposed above the absorber layer.
摘要翻译：提供了用于形成包括至少一个半导体层的光伏电池的背接触的方法。一种方法包括在金属接触件上沉积至少一个背接触材料。背面接触材料包括金属氮化物或金属磷化物。该方法还包括在背接触材料上沉积包括镉和碲的吸收层，并对后接触材料进行热处理，使得背接触材料与吸收层相互作用以形成降低光伏电池的接触电阻的中间层。还提供了一种光伏电池，其包括金属接触件，设置在金属接触件上的至少一个背接触材料以及包含设置在背面接触材料上方的包含镉和碲的材料的吸收层。中间层设置在背接触材料和吸收层之间，并且包括背接触材料和吸收层材料的组成梯度层。光伏电池还包括设置在吸收层上方的窗口层。

9. 发明授权

US07087112B1 Nitride ceramics to mount aluminum nitride seed for sublimation growth 有权
标题翻译：氮化硅陶瓷用于安装氮化铝种子用于升华生长
公开(公告)号：US07087112B1
公开(公告)日：2006-08-08
申请号：US10725869
申请日：2003-12-02
申请人： Juan Carlos Rojo , Leo J. Schowalter , Kenneth Morgan , Jan Barani
发明人： Juan Carlos Rojo , Leo J. Schowalter , Kenneth Morgan , Jan Barani
IPC分类号： C30B29/38
CPC分类号： C30B29/403 , C30B23/00
摘要： An apparatus and method for fabricating a mount for an aluminum nitride (AlN) seed for single crystal aluminum nitride growth is provided. A holder having a proximal base and wall portions extending therefrom is fabricated from crystal growth crucible material, and defines an internal cavity. An AlN seed is placed within the holder, and placed within a nitrogen atmosphere at a temperature at or exceeding the melting point of a suitable material capable of forming a nitride ceramic by nitridation, such as aluminum. Pellets fabricated from this material are dropped into the holder and onto the seed, so that they melt and react with the nitrogen atmosphere to form a nitride ceramic. The seed is effectively molded in-situ with the ceramic, so that the ceramic and holder forms a closely conforming holder for the seed, suitable for single crystal AlN growth.
摘要翻译：提供了一种用于制造用于单晶氮化铝生长的氮化铝（AlN）种子的安装件的装置和方法。具有近端基部和从其延伸的壁部分的保持器由晶体生长坩埚材料制成，并且限定内部空腔。将AlN种子放置在保持器内，并且在氮气气氛中放置在能够通过氮化形成氮化物陶瓷的合适材料的熔点或超过其熔点的温度，例如铝。将由该材料制成的颗粒滴入保持器和种子上，使其熔融并与氮气气氛反应形成氮化物陶瓷。种子与陶瓷有效地原位成型，使得陶瓷和保持器形成适合于单晶AlN生长的种子的紧密配合的保持器。

10. 发明申请

US20130192667A1 PHOTOVOLTAIC DEVICES AND METHOD OF MAKING 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US20130192667A1
公开(公告)日：2013-08-01
申请号：US13362813
申请日：2012-01-31
申请人： Jinbo Cao , Bastiaan Arie Korevaar , Dalong Zhong , Juan Carlos Rojo , Qianqian Xin , Aharon Yakimov
发明人： Jinbo Cao , Bastiaan Arie Korevaar , Dalong Zhong , Juan Carlos Rojo , Qianqian Xin , Aharon Yakimov
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/073 , H01L31/0749 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： A photovoltaic device is presented. The photovoltaic device includes a transparent conductive layer; a window layer disposed on the transparent conductive layer; and an absorber layer disposed on the window layer. The window layer includes a low-diffusivity layer disposed adjacent to the transparent conductive layer and a high-diffusivity layer interposed between the low-diffusivity layer and the absorber layer. Method of making a photovoltaic device is also presented.
摘要翻译：介绍了光伏器件。光电器件包括透明导电层; 设置在所述透明导电层上的窗口层; 以及设置在窗口层上的吸收层。窗口层包括邻近透明导电层设置的低扩散层和介于低扩散层和吸收层之间的高扩散性层。还提出了制造光伏器件的方法。

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