专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06858153B2 Integrated low K dielectrics and etch stops 有权
标题翻译：集成的低K电介质和蚀刻停止
公开(公告)号：US06858153B2
公开(公告)日：2005-02-22
申请号：US10011368
申请日：2001-11-05
申请人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： H01L21/302 , A01C15/02 , A01C17/00 , C23C16/40 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , C23F1/00
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译：沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

2. 发明授权

US06340435B1 Integrated low K dielectrics and etch stops 失效
标题翻译：集成的低K电介质和蚀刻停止
公开(公告)号：US06340435B1
公开(公告)日：2002-01-22
申请号：US09329012
申请日：1999-06-09
申请人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： C23F100
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译：沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

3. 发明授权

US06669858B2 Integrated low k dielectrics and etch stops 有权
公开(公告)号：US06669858B2
公开(公告)日：2003-12-30
申请号：US10011369
申请日：2001-11-05
申请人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： B44C122
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

4. 发明授权

US07227244B2 Integrated low k dielectrics and etch stops 有权
标题翻译：集成的低k电介质和蚀刻停止
公开(公告)号：US07227244B2
公开(公告)日：2007-06-05
申请号：US10924551
申请日：2004-08-24
申请人： Claes H. Bjorkman , Melissa Min Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes H. Bjorkman , Melissa Min Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： H01L23/58
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译：沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

5. 发明申请

US20050023694A1 Integrated low k dielectrics and etch stops 有权
标题翻译：集成的低k电介质和蚀刻停止
公开(公告)号：US20050023694A1
公开(公告)日：2005-02-03
申请号：US10924551
申请日：2004-08-24
申请人： Claes Bjorkman , Melissa Yu , Hongqing Shan , David Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Chapra , Gerald Yin , Farhad Moghadam , Judy Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes Bjorkman , Melissa Yu , Hongqing Shan , David Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Chapra , Gerald Yin , Farhad Moghadam , Judy Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： H01L21/302 , A01C15/02 , A01C17/00 , C23C16/40 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/48
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译：沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

6. 发明授权

US08430970B2 Methods for preventing corrosion of plasma-exposed yttria-coated constituents 有权
标题翻译：防止等离子体暴露的氧化钇涂层成分腐蚀的方法
公开(公告)号：US08430970B2
公开(公告)日：2013-04-30
申请号：US12852673
申请日：2010-08-09
申请人： Ganapathy Swami , Peter Loewenhardt , Yunsang Kim
发明人： Ganapathy Swami , Peter Loewenhardt , Yunsang Kim
IPC分类号： B08B7/00 , B08B3/00 , B08B7/04
CPC分类号： C23C16/4404
摘要： In accordance with one embodiment of the present disclosure, a method for preventing corrosion of a plasma-exposed yttria-coated constituent from ambient acidic hydrolysis wherein the plasma-exposed yttria-coated constituent includes a hydrolysable acid precursor is disclosed. The method may include: removing the plasma-exposed yttria-coated constituent from a semiconductor processing assembly; binding the plasma-exposed yttria-coated constituent with flexible moisture wicking material; hydrolyzing the hydrolysable acid precursor with an overwhelming aqueous admixture to form a vitiated acidic compound, wherein the flexible moisture wicking material pulls the vitiated acidic compound away from the plasma-exposed yttria-coated constituent with capillary action; dehydrating the plasma-exposed yttria-coated constituent with additional flexible moisture wicking material to pull a latent amount of the vitiated acidic compound away from the plasma-exposed yttria-coated constituent; and isolating the plasma-exposed yttria-coated constituent from ambient moisture in a moisture obstructing enclosure.
摘要翻译：根据本公开的一个实施方案，公开了一种防止等离子体暴露的氧化钇涂覆的组分由环境酸性水解引起的腐蚀的方法，其中等离子体暴露的氧化钇涂层的组分包括可水解的酸前体。该方法可以包括：从半导体处理组件中去除等离子体暴露的氧化钇涂层的组分; 用柔性吸湿芯材材料结合等离子体暴露的氧化钇涂层组分; 用压倒性的水性混合物水解可水解的酸前体以形成残留的酸性化合物，其中柔性湿润吸湿材料通过毛细管作用将残留的酸性化合物从等离子体暴露的氧化钇涂覆的组分拉出; 用额外的柔性吸湿芯材材料使等离子体暴露的氧化钇涂层组分脱水，以将潜在量的残留酸性化合物远离等离子体暴露的氧化钇涂层组分; 并将隔离曝光的氧化钇涂层的组分与湿气阻塞的外壳中的环境湿度隔离开来。

7. 发明授权

US08308896B2 Methods to remove films on bevel edge and backside of wafer and apparatus thereof 有权
标题翻译：在晶片的斜边和背面去除薄膜的方法及其装置
公开(公告)号：US08308896B2
公开(公告)日：2012-11-13
申请号：US13053037
申请日：2011-03-21
申请人： Yunsang Kim , Andrew D. Bailey, III
发明人： Yunsang Kim , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , B44C1/22 , C03C25/68 , C03C15/00
CPC分类号： H01J37/32532 , H01J37/32357 , H01J37/3244 , H01J37/32862
摘要： A method of cleaning a bevel edge of a substrate in an etch processing chamber is provided. The method includes placing a substrate on a substrate support in a processing chamber. The method also includes flowing a cleaning gas through a gas feed located near a center of a gas distribution plate, disposed at a distance from the substrate support. The method further includes generating a cleaning plasma near a bevel edge of the substrate to clean the bevel edge by powering a bottom edge electrode or a top edge electrode with a RF power source and grounding the edge electrode that is not powered by the RF power source, the bottom edge electrode surrounds the substrate support and the top edge electrode surrounds the gas distribution plate.
摘要翻译：提供了一种在蚀刻处理室中清洁衬底的斜边缘的方法。该方法包括将衬底放置在处理室中的衬底支撑件上。该方法还包括使清洁气体流过设置在与衬底支撑件相距一定距离处的气体分配板的中心附近的气体进料。该方法还包括在衬底的斜边缘附近产生清洁等离子体，以通过用RF电源为底部边缘电极或顶部边缘电极供电来清洁斜面边缘，并且将不由RF电源供电的边缘电极接地底部边缘电极围绕基板支撑件，并且顶部边缘电极围绕气体分配板。

8. 发明授权

US08268116B2 Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber 有权
标题翻译：用于保护与处理室中的工艺性能区域相邻的工艺排除区域的方法和设备
公开(公告)号：US08268116B2
公开(公告)日：2012-09-18
申请号：US11818621
申请日：2007-06-14
申请人： Andrew D. Bailey, III , Yunsang Kim
发明人： Andrew D. Bailey, III , Yunsang Kim
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32385 , H01J37/321 , H01J37/32366 , H01J37/32706 , H01L21/02087 , H01L21/67069 , H01L21/6715
摘要： Apparatus and methods protect a central process exclusion region of a substrate during processing of an edge environ region of process performance. Removal of undesired materials is only from the edge environ region while the central device region is protected from damage. Field strengths are configured to protect the central region from charged particles from plasma in a process chamber and to foster removal of the undesired materials from only the edge environ region. A magnetic field is configured with a peak value adjacent to a border between the central and edge environ regions. A strong field gradient extends from the peak radially away from the border and away from the central region to repel the charged particles from the central region. The strength and location of the field are adjustable by axial relative movement of magnet sections, and flux plates are configured to redirect the field for desired protection.
摘要翻译：装置和方法在处理工艺性能的边缘环境区域期间保护衬底的中心过程排除区域。去除不需要的材料仅来自边缘环境区域，而中央设备区域被保护免受损坏。场强被配置为保护中心区域免受处理室中的带电粒子等离子体的影响，并且仅促进从边缘环境区域移除不需要的材料。磁场配置有与中央和边缘环境区域之间的边界相邻的峰值。强场梯度从径向远离边界并远离中心区域从峰值延伸，以将带电粒子从中心区域排斥。磁场的强度和位置可以通过磁体部分的轴向相对运动来调节，并且磁通板被配置为重定向磁场以达到期望的保护。

9. 发明申请

US20120094502A1 METHODS FOR DEPOSITING BEVEL PROTECTIVE FILM 有权
标题翻译：沉积水保护膜的方法
公开(公告)号：US20120094502A1
公开(公告)日：2012-04-19
申请号：US12907149
申请日：2010-10-19
申请人： Neungho Shin , Patrick Chung , Yunsang Kim
发明人： Neungho Shin , Patrick Chung , Yunsang Kim
IPC分类号： H01L21/30
CPC分类号： H01L21/67069 , H01J37/32366 , H01J37/32376 , H01J37/32568 , H01L21/2007 , H01L21/30625 , H01L21/3083 , H01L21/67017
摘要： A method of film deposition using localized plasma to protect bevel edge of a wafer in a plasma chamber. The method includes adjusting an electrode gap between a movable electrode and a stationary electrode, the wafer being disposed on one of the movable electrode and the stationary electrode, to a gap distance configured to prevent plasma formation over a center portion of the wafer, the gap distance also dimensioned such that a plasma-sustainable condition around the bevel edge of the wafer is formed after the adjusting. The method also includes flowing deposition gas into the plasma chamber. The method includes maintaining, using a heater, a chuck temperature that is configured to facilitate film deposition on the bevel edge. The method further includes generating the localized plasma from the deposition gas for depositing a film on the bevel edge.
摘要翻译：使用局部等离子体的膜沉积方法来保护等离子体室中的晶片的斜边缘。该方法包括调整可动电极和固定电极之间的电极间隙，将晶片设置在可动电极和固定电极中的一个上，形成为防止等离子体在晶片的中心部分形成的间隙距离，间隙距离也被确定为使得在调整之后形成围绕晶片的斜边缘的等离子体可持续状态。该方法还包括将沉积气体流入等离子体室。该方法包括使用加热器维持配置成有助于膜倾斜边缘上的膜沉积的卡盘温度。该方法还包括从沉积气体产生局部等离子体，以便在斜面边缘上沉积膜。

10. 发明申请

US20090272402A1 METHOD AND APPARATUS FOR DETECTING PLASMA UNCONFINEMENT 有权
标题翻译：用于检测等离子体不确定性的方法和装置
公开(公告)号：US20090272402A1
公开(公告)日：2009-11-05
申请号：US12114681
申请日：2008-05-02
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： B08B6/00
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译：提供了一种在斜边清洁操作期间检测反应室中的等离子体无约束的方法。该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。如果偏离阈值波长强度超过目标偏差，则清除结束。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式