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    • 4. 发明申请
    • SYSTEM AND METHOD FOR CONTAINMENT SHIELDING OF PECVD DEPOSITION SOURCES
    • 含有PECVD沉积源的屏蔽系统及方法
    • WO2009096952A1
    • 2009-08-06
    • PCT/US2008/052381
    • 2008-01-30
    • APPLIED MATERIALS, INC.STOWELL, Michael, W.
    • STOWELL, Michael, W.
    • C23C16/00
    • C23C16/5093H01J37/321H01J37/32477H01J37/32495H01J37/32623
    • A system and method for treating a surface of a substrate is described. One embodiment includes a system for treating a surface of a substrate, the system comprising a process chamber, a substrate support positioned inside the process chamber, the substrate support configured to support a substrate, an antenna located inside the process chamber, a containment shield partially surrounding the antenna, the containment shield having an inner volume, the containment shield comprising a base material and a coating on the base material, wherein the coating is pre-coated on the base material, a support gas inlet positioned to supply a support gas to the inner volume of the containment shield, and an at least one aperture in the containment shield, the at least one aperture positioned to enable plasma species to escape the inner volume of the containment shield and collide with the precursor gas.
    • 描述了用于处理基板表面的系统和方法。 一个实施例包括用于处理基板的表面的系统,该系统包括处理室,位于处理室内部的基板支撑件,被配置为支撑基板的基板支撑件,位于处理室内部的天线,部分地 围绕所述天线,所述防护罩具有内部容积,所述防护罩包括基材和在所述基材上的涂层,其中所述涂层预涂在所述基底材料上,支撑气体入口,定位成将支撑气体供应到 所述安全壳屏蔽件的内部容积以及所述安全壳屏蔽件中的至少一个孔口,所述至少一个孔口被定位成使等离子体物质能够逃离所述容纳罩的内部容积并与所述前体气体碰撞。
    • 5. 发明申请
    • SYSTEM AND METHOD FOR PRE-IONIZATION OF SURFACE WAVE LAUNCHED PLASMA DISCHARGE SOURCES
    • 表面波发射等离子体放电源预先放电的系统和方法
    • WO2009096951A1
    • 2009-08-06
    • PCT/US2008/052380
    • 2008-01-30
    • APPLIED MATERIALS, INC.STOWELL, Michael, W.
    • STOWELL, Michael, W.
    • A62D3/00
    • H01J37/32477H01J37/32192H01J37/32357H01J37/32422
    • A system and method for treating a surface of a substrate is described. One embodiment includes a method for depositing a film on a substrate, the method comprising generating a first plurality of power pulses, each of the first plurality of power pulses having a first pulse amplitude, providing the first plurality of power pulses to a first discharge tube, generating a plasma about the first discharge tube using the first plurality of power pulses, sustaining the plasma between each of the first plurality of power pulses such that the plasma is not reignited during each of the first plurality of power pulses, disassociating a feedstock gas using the plasma, and depositing at least a portion of the disassociated feedstock gas onto a substrate.
    • 描述了用于处理基板表面的系统和方法。 一个实施例包括用于在衬底上沉积膜的方法,所述方法包括产生第一多个功率脉冲,第一多个功率脉冲中的每一个具有第一脉冲幅度,将第一多个功率脉冲提供给第一放电管 使用所述第一多个功率脉冲在所述第一放电管周围产生等离子体,在所述第一多个功率脉冲中的每一个之间维持所述等离子体,使得所述等离子体在所述第一多个功率脉冲期间的每一个期间不重新点燃, 使用等离子体,并将至少一部分脱离的原料气体沉积到基底上。
    • 8. 发明申请
    • SURFACE PREHEATING TREATMENT OF PLASTICS SUBSTRATE
    • 塑料衬底的表面预热处理
    • WO2009117745A2
    • 2009-09-24
    • PCT/US2009044213
    • 2009-05-15
    • APPLIED MATERIALS INCSTOWELL MICHAEL WKRISHNA NETY
    • STOWELL MICHAEL WKRISHNA NETY
    • C23C14/02C23C14/50C23C16/02
    • B05D3/0227B05D1/60B05D1/62B05D7/02C23C14/541C23C16/46
    • A source of IR radiation is used to heat a plastic substrate in a fast fashion inside a processing chamber, where the processing chamber is configured to preheat the plastic substrate and to perform thin film deposition, such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), or plasma etching and cleaning. One aspect of using the source of IR radiation is to preheat only the surface of the plastic substrate while the core of the plastic substrate remains substantially unheated, so that the structure of the plastic substrate may remain unchanged. Meanwhile, the surface properties of the plastic substrate may be modified after the preheating treatment. The source of IR radiation may be provided at wavelength selected to substantially match the absorption wavelength of the plastic substrate. The plastic substrate moves through the heat flux zone generated by the source of IR radiation at a controllable speed.
    • 红外辐射源用于在处理室内以快速方式加热塑料衬底,其中处理室被配置为预热塑料衬底并执行薄膜沉积,诸如化学气相沉积(CVD)或物理蒸气 沉积(PVD)或等离子体蚀刻和清洁。 使用IR辐射源的一个方面是仅预热塑料基材的表面,而塑料基材的核心基本保持不加热,使得塑料基材的结构可以保持不变。 同时,塑料基材的表面性质可以在预热处理后改变。 IR辐射源可以被提供在被选择为与塑料衬底的吸收波长基本匹配的波长处。 塑料基板以可控的速度移动通过IR辐射源产生的热通量区。
    • 9. 发明申请
    • CURVED MICROWAVE PLASMA LINE SOURCE FOR COATING OF THREE-DIMENSIONAL SUBSTRATES
    • 三维基底涂层的曲面微波等离子体线源
    • WO2011006128A2
    • 2011-01-13
    • PCT/US2010/041609
    • 2010-07-09
    • APPLIED MATERIALS, INC.STOWELL, Michael, W.
    • STOWELL, Michael, W.
    • C23C14/22C23C14/34C23C14/50
    • H01J27/16C23C16/04C23C16/511H01J37/32192H01J37/3222H05H1/46
    • Deposition system and methods for dynamic and static coatings are provided. A deposition system for dynamic coating includes a processing chamber, a non-linear coaxial microwave source, and a substrate support member disposed inside the processing chamber for holding a non-planar substrate. The substrate has a first contour along a first direction and a second contour along a second direction orthogonal to the first direction. The deposition system further includes a carrier gas line for providing a flow of sputtering agents inside the processing chamber and a feedstock gas line for providing a flow of precursor gases. The deposition system for static coating includes a substrate support member disposed inside the processing chamber for holding a non-planar substrate and an array of curved coaxial microwave sources within the processing chamber. The curved coaxial microwave sources are spaced along the second direction to cover the substrate.
    • 提供了动态和静态涂层的沉积系统和方法。 用于动态涂覆的沉积系统包括处理室,非线性同轴微波源以及设置在处理室内用于保持非平面基板的基板支撑构件。 衬底具有沿着第一方向的第一轮廓和沿着与第一方向正交的第二方向的第二轮廓。 沉积系统还包括用于在处理室内提供溅射剂流的载气管线和用于提供前体气体流的原料气管线。 用于静态涂覆的沉积系统包括设置在处理室内部的基板支撑构件,用于在处理室内保持非平面基板和弯曲同轴微波源阵列。 弯曲的同轴微波源沿第二方向隔开以覆盖基板。
    • 10. 发明申请
    • HIGH EFFICIENCY LOW ENERGY MICROWAVE ION/ELECTRON SOURCE
    • 高效低能微波离子/电子源
    • WO2011006109A2
    • 2011-01-13
    • PCT/US2010/041585
    • 2010-07-09
    • APPLIED MATERIALS, INC.STOWELL, Michael W.
    • STOWELL, Michael W.
    • H01J27/16H01J37/08H05H1/46C23C14/22
    • H01J27/16C23C14/221H01J37/32192H01J37/3222H05H1/46
    • A microwave charged particle source is provided according to various embodiments of the invention. The microwave charged particle source can include a coaxial antenna for generating microwaves and a dielectric layer surrounding the antenna. The microwave charged particle source can also include a first gas line outside the dielectric layer for providing sputtering gases and/or a second gas line for providing cooling gas in a space between the antenna and dielectric layer. The microwave charged particle source can further include a containment shield partially surrounding the dielectric layer and an extraction grid disposed on or near an aperture in the containment shield. In use, charged particles can be formed with the generated microwaves from sputtering gases. And the charged particles can be accelerated under an electric field created from a voltage applied to the extraction grid. A method for providing microwave charged particle source is also provided.
    • 根据本发明的各种实施例提供微波带电粒子源。 微波带电粒子源可以包括用于产生微波的同轴天线和围绕天线的介电层。 微波带电粒子源还可以包括在介电层之外的用于提供溅射气体的第一气体线路和/或用于在天线和介电层之间的空间中提供冷却气体的第二气体线路。 微波带电粒子源还可以包括部分地围绕电介质层的容纳罩和设置在容纳罩中的孔上或附近的引出格栅。 在使用中,可以利用溅射气体产生的微波形成带电粒子。 带电粒子可以在施加到抽取网格的电压所产生的电场下加速。 还提供了一种提供微波带电粒子源的方法。