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    • 2. 发明申请
    • INFORMATION PROCESSING SYSTEM AND METHOD
    • 信息处理系统和方法
    • WO2006036069A1
    • 2006-04-06
    • PCT/NO2005/000360
    • 2005-09-27
    • GUDENSEN, Hans, GudeNORDAL, Per-ErikENGQUIST, Isak
    • GUDENSEN, Hans, GudeNORDAL, Per-ErikENGQUIST, Isak
    • G06F3/033
    • G06F3/017G06F1/1626G06F1/1686G06F3/0236G06F3/0304G06F3/0346G06F3/0425G06F3/04815G06F3/0482G06F3/0485G06F2200/1637G06F2203/04806
    • In an information processing system an optoelectronic device comprises a memory a data processing system, and an optical imaging recorder and further hardware and software for analyzing information captured by the optical image recorder. On the basis of the analyzed information an output signal indicative of the motion characteristics of the optoelectronic device relative to real or virtual recorded objects, textures or scenery is output to display control electronics adapted for managing a displayed image in response to the output signal characteristics. In a method for operating an information processing system of this kind at least one parameter is derived from the motion of the optoelectronic device and equipment linked therewith relative to real or virtual recorded objects, textures or scenery, and the at least one parameter is applied as input to control electronics for enabling navigation and/or input commands in display means connected therewith. - Particularly the system and method can be used for implementing a three-dimensional relative pointer device, in practice a three-dimensional computer mouse.
    • 在信息处理系统中,光电子器件包括数据处理系统的存储器和用于分析由光学图像记录器捕获的信息的光学成像记录器和其他硬件和软件。 基于所分析的信息,将指示光电子器件相对于实际或虚拟记录物体,纹理或风景的运动特性的输出信号输出到适于根据输出信号特性管理显示图像的显示控制电子装置。 在这种用于操作这种信息处理系统的方法中,至少一个参数是从相对于实际或虚拟记录对象,纹理或风景的光电子设备和与之相连的设备的运动导出的,并且至少一个参数被应用为 输入到控制电子装置,用于在与其连接的显示装置中启用导航和/或输入命令。 - 特别地,系统和方法可以用于实现三维相对指针设备,实际上是三维计算机鼠标。
    • 3. 发明申请
    • A NON-VOLATILE MEMORY DEVICE
    • 非易失性存储器件
    • WO2006118466A1
    • 2006-11-09
    • PCT/NO2006/000152
    • 2006-04-26
    • THIN FILM NEWCO ASAENGQUIST, IsakNORDAL, Per-ErikGUDESEN, Hans, Gude
    • ENGQUIST, IsakNORDAL, Per-ErikGUDESEN, Hans, Gude
    • G11C11/22H01L27/115H01L27/12H01L27/28
    • G11C11/22G11C11/221H01L27/11502H01L27/11507H01L28/55
    • In a non-volatile memory device comprising a carrier substrate and a plurality of memory cells, each memory cell contains a memory material in the form of an electrically polarizable material and has a capacitor-like structure with a pair of electrodes contacting the memory material. Pairs of electrodes are arranged in an array and the plurality of memory cells are formed with pairwise combinations of adjacent array electrodes such that the memory cells likewise become arranged in a corresponding array. Each memory cell is defined in memory material provided in or adjacent to a spacing between the electrodes of pairs provided on the carrier substrate, such that the memory material when subjected to an electric field applied to the electrodes of the pair becomes polarized in a direction along an axis of the electric field, or responds to said electric field as applied with a change in the direction or value of an already therein set polarization.
    • 在包括载体衬底和多个存储器单元的非易失性存储器件中,每个存储器单元包含电可极化材料形式的存储材料,并且具有电容器状结构,其中一对电极与存储器材料接触。 成对的电极排列成阵列,并且多个存储单元形成有相邻阵列电极的成对组合,使得存储单元同样变成相应的阵列。 每个存储单元被限定在设置在载体衬底上的对的电极之间或之间的间隔中的存储器材料中,使得当受到施加到该对的电极的电场的存储材料沿着沿着 电场的轴,或者在已经在其中设定的偏振的方向或值的变化中施加的所述电场响应。
    • 4. 发明申请
    • BIMODAL OPERATION OF FERRROELECTRIC AND ELECTRET MEMORY CELLS AND DEVICES
    • 微电子和电子存储器电池和器件的双重操作
    • WO2005101419A1
    • 2005-10-27
    • PCT/NO2005/000119
    • 2005-04-12
    • THIN FILM ELECTRONICS ASAGUDESEN, Hans, GudeLEISTAD, Geirr, I.ENGQUIST, IsakGUSTAFSSON, Göran
    • GUDESEN, Hans, GudeLEISTAD, Geirr, I.ENGQUIST, IsakGUSTAFSSON, Göran
    • G11C11/22
    • G11C11/22
    • In a method for enhancing the data storage capability of ferroelectric or electret memory cell which has been applied to storage of data and attained an imprint condition, suitable voltage pulses are used for evoking a temporary relaxation of the imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state in a non-destructive readout operation. Sequences of one or more voltage pulses are used to evoke readout signals respectively indicative of a non-volatile and a volatile polarization state of the memory cell, but without altering said polarization states. Imprinted memory cells can be overwritten to effect a temporary and volatile storage of data in a memory device in a ferroelectric or electret memory device by assigning a first logical value to imprinted memory cells and a second logical value by transferring selected to memory cells transferred into a relaxed volatile state, whereby the stored logical values can be discriminated by the detecting the difference in dynamic response of respectively imprinted and relaxed memory cells.
    • 在用于增强已经应用于数据存储和达到印记条件的铁电或驻极体存储单元的数据存储能力的方法中,使用适当的电压脉冲来引起压印条件的暂时放宽到易挥发的极化状态, 在非破坏性读出操作中与印刻偏振状态区分开来。 使用一个或多个电压脉冲的序列来唤起分别指示存储器单元的非易失性和易失性极化状态但不改变所述极化状态的读出信号。 印刷的存储器单元可以被覆盖,以通过将所选择的第一逻辑值分配给压印存储器单元并将所转移的存储器单元传送到第二逻辑值来实现在铁电或驻极体存储器件中的存储器件中的数据的临时和易失性存储 轻松的挥发性状态,由此可以通过检测分别压印和放松的存储单元的动态响应的差异来区分所存储的逻辑值。
    • 5. 发明申请
    • A MEMORY DEVICE AND METHODS FOR OPERATING THE SAME
    • 一种存储器件及其操作方法
    • WO2006091108A1
    • 2006-08-31
    • PCT/NO2006/000072
    • 2006-02-23
    • THIN FILM ELECTRONICS ASAENGQUIST, IsakNORDAL, Per-ErikGUDESEN, Hans GudeDYREKLEV, PeterGUSTAFSSON, Göran
    • ENGQUIST, IsakNORDAL, Per-ErikGUDESEN, Hans GudeDYREKLEV, PeterGUSTAFSSON, Göran
    • G11C11/56G11C11/22H01L27/115
    • H01L27/101G11C11/22G11C11/5607G11C11/5657
    • In a memory device comprising one or more electret or ferroelectric memory cells, the memory cells are provided with multibit storage capacity by being made with a plurality of spatially defined regions of different coercive voltages and/or sizes. In a method for writing data to a memory cell of this kind, a sequence of voltage pulses of different values is used to enable a successive writing of each region with respective different polarization values. In a first readout method from a memory cell of this kind, a similar sequence of voltage pulses is used, but in reversed order enabling a successive readout of each region. In a second readout method a linear voltage ramp is applied to the memory cell and a resulting output current response is monitored. In a third readout method a write operation is used to switch all regions, followed by a readout operation similar to either the first or second readout method. In a fourth readout method a sequence of voltage ramps or voltage pulses of different values is used and output current responses recorded to provide a unique signature of the memory cell based on both the stored data and the dynamic response characteristics.
    • 在包括一个或多个驻极体或铁电存储器单元的存储器件中,通过用多个具有不同矫顽电压和/或尺寸的空间限定的区域制成存储器单元以提供多位存储容量。 在将数据写入到这种存储单元中的方法中,使用不同值的电压脉冲序列,以便能够以各自不同的偏振值对每个区域进行连续写入。 在这种来自这种存储单元的第一读出方法中,使用类似的电压脉冲序列,但是以相反的顺序使得能够连续地读出每个区域。 在第二读出方法中,将线性电压斜坡施加到存储器单元,并且监视所得到的输出电流响应。 在第三读出方法中,使用写入操作来切换所有区域,接着是类似于第一或第二读出方法的读出操作。 在第四读出方法中,使用不同值的电压斜坡或电压脉冲的序列,并记录输出电流响应,以基于存储的数据和动态响应特性提供存储器单元的唯一签名。
    • 6. 发明申请
    • AN ORGANIC ELECTRONIC CIRCUIT WITH FUNCTIONAL INTERLAYER AND METHOD FOR MAKING THE SAME
    • 一种具有功能中间层的有机电子电路及其制造方法
    • WO2005106890A8
    • 2006-01-19
    • PCT/NO2005000136
    • 2005-04-22
    • THIN FILM ELECTRONICS ASAEDVARDSSON NICLASENGQUIST ISAKJOHANSSON MATS
    • EDVARDSSON NICLASENGQUIST ISAKJOHANSSON MATS
    • G11C20060101G11C11/22H01L21/02H01L29/08H01L51/10
    • H01L28/40G11C11/22
    • An organic electronic circuit (C) with improved performance, particularly at elevated temperatures, comprises an organic electret or ferroelectric material (2) provided between a first electrode (la) and a second electrode (lb). A cell with a capacitor-like structure is defined in the organic electret or ferroelectric material (2) and can be accessed electrically directly or indirectly via the electrodes. At least one functional interlayer (3a; 3b) is provided between one of the electrodes (l a; lb) and the organic electret or ferroelectric material (2). The interlayer material is inorganic, non-conducting and substantially inert relative to the organic electret or ferroelectric material (2) in general. Typically the interlayer (3) is inert relative to the organic electret or ferroelectric material (2) particularly when the latter is a fluorine-containing material. A plurality of circuits (C) is used for forming a matrix-addressable array. The interlayer is deposited as molecular species from a source of functional interlayer material without dissociation of individual interlayer molecules.
    • 具有改进性能的有机电子电路(C),特别是在升高的温度下,包括设置在第一电极(1a)和第二电极(lb)之间的有机驻极体或铁电材料(2)。 具有电容器状结构的电池被限定在有机驻极体或铁电材料(2)中,并且可以通过电极直接或间接地访问。 在一个电极(1a; 1b)和有机驻极体或铁电材料(2)之间提供至少一个功能性中间层(3a; 3b)。 中间层材料通常相对于有机驻极体或铁电材料(2)是无机的,不导电的和基本上是惰性的。 通常,中间层(3)相对于有机驻极体或铁电材料(2)是惰性的,特别是当后者是含氟材料时。 多个电路(C)用于形成矩阵寻址阵列。 中间层作为分子物质从功能性中间层材料源沉积而不分离各层间分子。
    • 7. 发明申请
    • AN ORGANIC ELECTRONIC CIRCUIT WITH FUNCTIONAL INTERLAYER AND METHOD FOR MAKING THE SAME
    • 一种具有功能中间层的有机电子电路及其制造方法
    • WO2005106890A1
    • 2005-11-10
    • PCT/NO2005/000136
    • 2005-04-22
    • THIN FILM ELECTRONICS ASAEDVARDSSON, NiclasENGQUIST, IsakJOHANSSON, Mats
    • EDVARDSSON, NiclasENGQUIST, IsakJOHANSSON, Mats
    • G11C11/22
    • H01L28/40G11C11/22
    • An organic electronic circuit (C) with improved performance, particularly at elevated temperatures, comprises an organic electret or ferroelectric material (2) provided between a first electrode (la) and a second electrode (lb). A cell with a capacitor-like structure is defined in the organic electret or ferroelectric material (2) and can be accessed electrically directly or indirectly via the electrodes. At least one functional interlayer (3a; 3b) is provided between one of the electrodes (l a; lb) and the organic electret or ferroelectric material (2). The interlayer material is inorganic, non-conducting and substantially inert relative to the organic electret or ferroelectric material (2) in general. Typically the interlayer (3) is inert relative to the organic electret or ferroelectric material (2) particularly when the latter is a fluorine-containing material. A plurality of circuits (C) is used for forming a matrix-addressable array. The interlayer is deposited as molecular species from a source of functional interlayer material without dissociation of individual interlayer molecules.
    • 具有改进性能的有机电子电路(C),特别是在升高的温度下,包括设置在第一电极(1a)和第二电极(lb)之间的有机驻极体或铁电材料(2)。 具有电容器状结构的电池被限定在有机驻极体或铁电材料(2)中,并且可以通过电极直接或间接地访问。 在一个电极(1a; 1b)和有机驻极体或铁电材料(2)之间提供至少一个功能性中间层(3a; 3b)。 中间层材料通常相对于有机驻极体或铁电材料(2)是无机的,不导电的和基本上是惰性的。 通常,中间层(3)相对于有机驻极体或铁电材料(2)是惰性的,特别是当后者是含氟材料时。 多个电路(C)用于形成矩阵寻址阵列。 中间层作为分子物质从功能性中间层材料源沉积而不分离各层间分子。