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    • 1. 发明申请
    • A NON-VOLATILE MEMORY DEVICE
    • 非易失性存储器件
    • WO2006118466A1
    • 2006-11-09
    • PCT/NO2006/000152
    • 2006-04-26
    • THIN FILM NEWCO ASAENGQUIST, IsakNORDAL, Per-ErikGUDESEN, Hans, Gude
    • ENGQUIST, IsakNORDAL, Per-ErikGUDESEN, Hans, Gude
    • G11C11/22H01L27/115H01L27/12H01L27/28
    • G11C11/22G11C11/221H01L27/11502H01L27/11507H01L28/55
    • In a non-volatile memory device comprising a carrier substrate and a plurality of memory cells, each memory cell contains a memory material in the form of an electrically polarizable material and has a capacitor-like structure with a pair of electrodes contacting the memory material. Pairs of electrodes are arranged in an array and the plurality of memory cells are formed with pairwise combinations of adjacent array electrodes such that the memory cells likewise become arranged in a corresponding array. Each memory cell is defined in memory material provided in or adjacent to a spacing between the electrodes of pairs provided on the carrier substrate, such that the memory material when subjected to an electric field applied to the electrodes of the pair becomes polarized in a direction along an axis of the electric field, or responds to said electric field as applied with a change in the direction or value of an already therein set polarization.
    • 在包括载体衬底和多个存储器单元的非易失性存储器件中,每个存储器单元包含电可极化材料形式的存储材料,并且具有电容器状结构,其中一对电极与存储器材料接触。 成对的电极排列成阵列,并且多个存储单元形成有相邻阵列电极的成对组合,使得存储单元同样变成相应的阵列。 每个存储单元被限定在设置在载体衬底上的对的电极之间或之间的间隔中的存储器材料中,使得当受到施加到该对的电极的电场的存储材料沿着沿着 电场的轴,或者在已经在其中设定的偏振的方向或值的变化中施加的所述电场响应。
    • 3. 发明申请
    • A MEMORY DEVICE AND METHODS FOR OPERATING THE SAME
    • 一种存储器件及其操作方法
    • WO2006091108A1
    • 2006-08-31
    • PCT/NO2006/000072
    • 2006-02-23
    • THIN FILM ELECTRONICS ASAENGQUIST, IsakNORDAL, Per-ErikGUDESEN, Hans GudeDYREKLEV, PeterGUSTAFSSON, Göran
    • ENGQUIST, IsakNORDAL, Per-ErikGUDESEN, Hans GudeDYREKLEV, PeterGUSTAFSSON, Göran
    • G11C11/56G11C11/22H01L27/115
    • H01L27/101G11C11/22G11C11/5607G11C11/5657
    • In a memory device comprising one or more electret or ferroelectric memory cells, the memory cells are provided with multibit storage capacity by being made with a plurality of spatially defined regions of different coercive voltages and/or sizes. In a method for writing data to a memory cell of this kind, a sequence of voltage pulses of different values is used to enable a successive writing of each region with respective different polarization values. In a first readout method from a memory cell of this kind, a similar sequence of voltage pulses is used, but in reversed order enabling a successive readout of each region. In a second readout method a linear voltage ramp is applied to the memory cell and a resulting output current response is monitored. In a third readout method a write operation is used to switch all regions, followed by a readout operation similar to either the first or second readout method. In a fourth readout method a sequence of voltage ramps or voltage pulses of different values is used and output current responses recorded to provide a unique signature of the memory cell based on both the stored data and the dynamic response characteristics.
    • 在包括一个或多个驻极体或铁电存储器单元的存储器件中,通过用多个具有不同矫顽电压和/或尺寸的空间限定的区域制成存储器单元以提供多位存储容量。 在将数据写入到这种存储单元中的方法中,使用不同值的电压脉冲序列,以便能够以各自不同的偏振值对每个区域进行连续写入。 在这种来自这种存储单元的第一读出方法中,使用类似的电压脉冲序列,但是以相反的顺序使得能够连续地读出每个区域。 在第二读出方法中,将线性电压斜坡施加到存储器单元,并且监视所得到的输出电流响应。 在第三读出方法中,使用写入操作来切换所有区域,接着是类似于第一或第二读出方法的读出操作。 在第四读出方法中,使用不同值的电压斜坡或电压脉冲的序列,并记录输出电流响应,以基于存储的数据和动态响应特性提供存储器单元的唯一签名。
    • 4. 发明申请
    • MULTI-ELEMENT DEVICE
    • 多元器件
    • WO2010101468A1
    • 2010-09-10
    • PCT/NO2009/000072
    • 2009-03-02
    • GUDESEN, Hans GudeNORDAL, Per-Erik
    • GUDESEN, Hans GudeNORDAL, Per-Erik
    • F24J2/54
    • F21S11/00F24S23/80F24S30/45F24S30/48F24S50/20F24S2023/872F24S2030/136F24S2030/14Y02B10/20Y02E10/47
    • The invention relates to a solar tracking system embedded in a flat package which exhibits no mechanical motion outside its form factor, and which can be compactly integrated in a fixed position into walls, roofs, etc of buildings or in free-standing structures. In addition to solar energy collection for the generation of electricity, the invention can be used for collecting and transmitting solar energy for heating and lighting applications. The invention employs a multi-element pointing array comprising at least two direction-critical elements capable of receiving and/or transmitting electromagnetic or acoustic radiation, wherein each element in the array is adapted to exhibit a pointing and/or alignment motion by rotating about one, two or three axes and moves in synchronism with other elements in the array, where at least two of said elements are directly or indirectly linked to at least two physical structures that can translate and/or rotate relative to each other.
    • 本发明涉及一种嵌入扁平封装中的太阳能跟踪系统,其在其外形之外不具有机械运动,并且可以紧密地集成在建筑物的墙壁,屋顶等中或固定结构中。 除了用于发电的太阳能收集之外,本发明可用于收集和发射用于加热和照明应用的太阳能。 本发明采用包括能够接收和/或传输电磁或声辐射的至少两个方向临界元件的多元件指向阵列,其中阵列中的每个元件适于通过围绕一个旋转来旋转来展现指向和/或对准运动 两个或三个轴线并与阵列中的其它元件同步地移动,其中至少两个所述元件直接或间接地连接到可相对于彼此平移和/或旋转的至少两个物理结构。
    • 8. 发明申请
    • APPARATUS AND METHOD FOR NON-DESTRUCTIVE DATA STORAGE AND RETRIEVAL
    • 非破坏性数据存储和检索的装置和方法
    • WO2003052762A1
    • 2003-06-26
    • PCT/NO2002/000476
    • 2002-12-12
    • THIN FILM ELECTRONICS ASAGUDESEN, Hans, GudeNORDAL, Per-Erik
    • GUDESEN, Hans, GudeNORDAL, Per-Erik
    • G11C5/02
    • G11C11/22
    • In a data storage apparatus comprising means for storing and retrieving data in respective write and read operations, and first and second set of addressing electrodes are provided, the latter set having electrodes that preferably are oriented orthogonally to the electrodes of the first set, and the electrodes ( b , c ) of the second set are provided as parallel twin electrodes located in parallel recesses or trenches (3) in the electrodes of the first set. The trenches compris a soft ferroelectric or electret memory material with piezoelectric properties such that memory cells (1) with two subcells (α¿1?, α¿2?) are formed in the trench (3) respectively between the electrodes ( a ) of the first set and the parallel twin electrodes ( b , c ) on either side of the latter. In a write operation data are encoded in the memory cells (1) by means of an applied voltage potential over the subcells (α¿1?, α¿2?). In a non-destructive readout operation of data encoded and stored in the memory cells (1) in this manner, the piezoelectric properties of the memory material (2) is employed for eliciting response signals from the subcells (α¿1?, α¿2?) of a memory cell (1) when the former are subjected to mechanical stresses in the lateral direction, such that the logical value stored in the memory cell (1) can be determined.
    • 在一种数据存储装置中,包括用于在各自的写入和读取操作中存储和检索数据的装置,并且提供了第一和第二组寻址电极,后者组​​具有优选地与第一组电极正交定向的电极, 第二组的电极b,c设置为平行的双电极,位于第一组的电极中的平行的凹槽或沟槽3中。 沟槽包括具有压电特性的软铁电或驻极体记忆材料,使得具有两个子电池α1,α2, 分别形成在第一组的电极a和后者的两侧的平行的双电极b,c之间的沟槽3中。 在写入操作中,通过在子单元α1,α2上施加的电压电位将数据编码在存储器单元1中。 在以这种方式编码和存储在存储单元1中的数据的非破坏性读出操作中,采用存储材料2的压电特性来引出来自子单元α1,α2, 当前者在横向受到机械应力时,可以确定存储在存储单元1中的逻辑值。
    • 9. 发明申请
    • FOLDED MEMORY LAYERS
    • 折叠记忆层
    • WO2003046924A1
    • 2003-06-05
    • PCT/NO2002/000458
    • 2002-11-29
    • THIN FILM ELECTRONICS ASAGUDESEN, Hans, GudeNORDAL, Per-Erik
    • GUDESEN, Hans, GudeNORDAL, Per-Erik
    • G11C11/22
    • G11C11/22H01L27/10
    • In a ferroelectric or electret volumetric memory device with a memory material provided in sandwich between first and second electrode layers (2; 4) with stripe-like electrodes forming word lines (2) and bit lines (4) of a matrix-addressable memory array (M), memory cells are defined in volumes of memory material in between two crossing word lines (2) and bit lines (4) and a plurality of memory arrays are provided in a stacked arrangement. A stack (S) of memory arrays (M) is formed by two or more ribbon-like structures (R), which are folded and/or braided into each other. Each ribbon-like structure (R) comprises a flexible substrate (3) of non-conducting material and the electrode layers (2; 4) provided on each surface of the substrate and comprising the parallel strip-like electrodes extending along the ribbon-like structure (R). A layer of memory material (1) covers one of the electrode layers whereby each memory array (M) of the stack (S) is formed by overlapping portions of a pair of adjacent ribbon-like structures (R k , R k+1 ) and crossing in substantially orthogonal relationship.
    • 在具有在第一和第二电极层(2; 4)之间夹层提供的存储材料的铁电或驻极体体积存储器件中,条形电极形成矩阵可寻址存储器阵列的字线(2)和位线(4) (M)中,在两个交叉字线(2)和位线(4)之间的存储器材料的体积中定义存储器单元,并且堆叠布置提供多个存储器阵列。 存储器阵列(M)的堆叠(S)由两个或更多个相互折叠和/或编织的带状结构(R)形成。 每个带状结构(R)包括非导电材料的柔性基板(3)和设置在基板的每个表面上的电极层(2; 4),并且包括沿带状延伸的平行条状电极 结构(R)。 存储器材料层(1)覆盖电极层之一,由此堆叠(S)的每个存储器阵列(M)由一对相邻的带状结构(Rk,Rk + 1)和交叉的重叠部分形成 基本正交关系。