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1. 发明申请

WO2006091108A1 A MEMORY DEVICE AND METHODS FOR OPERATING THE SAME 审中-公开
标题翻译：一种存储器件及其操作方法
公开(公告)号：WO2006091108A1
公开(公告)日：2006-08-31
申请号：PCT/NO2006/000072
申请日：2006-02-23
申请人： THIN FILM ELECTRONICS ASA , ENGQUIST, Isak , NORDAL, Per-Erik , GUDESEN, Hans Gude , DYREKLEV, Peter , GUSTAFSSON, Göran
发明人： ENGQUIST, Isak , NORDAL, Per-Erik , GUDESEN, Hans Gude , DYREKLEV, Peter , GUSTAFSSON, Göran
IPC分类号： G11C11/56 , G11C11/22 , H01L27/115
CPC分类号： H01L27/101 , G11C11/22 , G11C11/5607 , G11C11/5657
摘要： In a memory device comprising one or more electret or ferroelectric memory cells, the memory cells are provided with multibit storage capacity by being made with a plurality of spatially defined regions of different coercive voltages and/or sizes. In a method for writing data to a memory cell of this kind, a sequence of voltage pulses of different values is used to enable a successive writing of each region with respective different polarization values. In a first readout method from a memory cell of this kind, a similar sequence of voltage pulses is used, but in reversed order enabling a successive readout of each region. In a second readout method a linear voltage ramp is applied to the memory cell and a resulting output current response is monitored. In a third readout method a write operation is used to switch all regions, followed by a readout operation similar to either the first or second readout method. In a fourth readout method a sequence of voltage ramps or voltage pulses of different values is used and output current responses recorded to provide a unique signature of the memory cell based on both the stored data and the dynamic response characteristics.
摘要翻译：在包括一个或多个驻极体或铁电存储器单元的存储器件中，通过用多个具有不同矫顽电压和/或尺寸的空间限定的区域制成存储器单元以提供多位存储容量。在将数据写入到这种存储单元中的方法中，使用不同值的电压脉冲序列，以便能够以各自不同的偏振值对每个区域进行连续写入。在这种来自这种存储单元的第一读出方法中，使用类似的电压脉冲序列，但是以相反的顺序使得能够连续地读出每个区域。在第二读出方法中，将线性电压斜坡施加到存储器单元，并且监视所得到的输出电流响应。在第三读出方法中，使用写入操作来切换所有区域，接着是类似于第一或第二读出方法的读出操作。在第四读出方法中，使用不同值的电压斜坡或电压脉冲的序列，并记录输出电流响应，以基于存储的数据和动态响应特性提供存储器单元的唯一签名。

2. 发明申请

WO2006009461A1 AN ORGANIC FERROELECTRIC OR ELECTRET MEMORY CIRCUIT AND A METHOD FOR MAKING SAME 审中-公开
标题翻译：有机电磁或电子存储器电路及其制造方法
公开(公告)号：WO2006009461A1
公开(公告)日：2006-01-26
申请号：PCT/NO2005/000267
申请日：2005-07-18
申请人： THIN FILM ELECTRONICS ASA , LILJEDHAL, Rickard , SANDBERG, Mats , GUSTAFSSON, Göran , GUDESEN, Hans, Gude
发明人： LILJEDHAL, Rickard , SANDBERG, Mats , GUSTAFSSON, Göran , GUDESEN, Hans, Gude
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , B82Y10/00
摘要： In an organic electronic circuit (C), particularly a memory circuit with an organic ferroelectric or electret material (2) the active material comprises fluorine atoms and consists of various organic materials. The active material is located between a first electrode and a second electrode. A cell with a capacitor-like structure is defined in the active material and can be accessed for an addressing operation via a first and a second electrode. At least one of these electrodes (1 a, 1 b) comprises a layer of chemically modified gold. In a passive matrix-addressable electronic device, particularly a ferroelectric or electret memory device, circuits (C) of this kind with the active material as a ferroelectric or electret memory material form the elements of a matrix-addressable array and define the memory cells provided between first and second set of addressing electrodes. At least the electrodes of at least one of the sets then comprise at least a layer of gold. A method in the fabrication of the organic electronic circuit (C) the method comprises steps for depositing a layer of gold as at least one layer of at least one electrode and treating an exposed surface of this layer chemically, whereafter the layer of active material can be deposited on the top of the processed surface of this electrode.
摘要翻译：在有机电子电路（C）中，特别是具有有机铁电或驻极体材料的存储电路（2），活性材料包含氟原子并由各种有机材料组成。活性材料位于第一电极和第二电极之间。具有电容器状结构的电池被限定在活性材料中，并且可以经由第一和第二电极进行寻址操作。这些电极（1a，1b）中的至少一个包括化学改性金层。在无源矩阵寻址电子器件中，特别是铁电或驻极体存储器件中，具有作为铁电或驻极体存储器材料的活性材料的这种电路（C）形成矩阵寻址阵列的元件，并且限定提供的存储器单元在第一和第二组寻址电极之间。至少所述组中的至少一个的电极至少包括一层金。有机电子电路（C）的制造方法包括以下步骤：将金层沉积为至少一层至少一个电极，并化学处理该层的暴露表面，此后活性材料层可以沉积在该电极的被处理表面的顶部。

3. 发明申请

WO2005101419A1 BIMODAL OPERATION OF FERRROELECTRIC AND ELECTRET MEMORY CELLS AND DEVICES 审中-公开
标题翻译：微电子和电子存储器电池和器件的双重操作
公开(公告)号：WO2005101419A1
公开(公告)日：2005-10-27
申请号：PCT/NO2005/000119
申请日：2005-04-12
申请人： THIN FILM ELECTRONICS ASA , GUDESEN, Hans, Gude , LEISTAD, Geirr, I. , ENGQUIST, Isak , GUSTAFSSON, Göran
发明人： GUDESEN, Hans, Gude , LEISTAD, Geirr, I. , ENGQUIST, Isak , GUSTAFSSON, Göran
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： In a method for enhancing the data storage capability of ferroelectric or electret memory cell which has been applied to storage of data and attained an imprint condition, suitable voltage pulses are used for evoking a temporary relaxation of the imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state in a non-destructive readout operation. Sequences of one or more voltage pulses are used to evoke readout signals respectively indicative of a non-volatile and a volatile polarization state of the memory cell, but without altering said polarization states. Imprinted memory cells can be overwritten to effect a temporary and volatile storage of data in a memory device in a ferroelectric or electret memory device by assigning a first logical value to imprinted memory cells and a second logical value by transferring selected to memory cells transferred into a relaxed volatile state, whereby the stored logical values can be discriminated by the detecting the difference in dynamic response of respectively imprinted and relaxed memory cells.
摘要翻译：在用于增强已经应用于数据存储和达到印记条件的铁电或驻极体存储单元的数据存储能力的方法中，使用适当的电压脉冲来引起压印条件的暂时放宽到易挥发的极化状态，在非破坏性读出操作中与印刻偏振状态区分开来。使用一个或多个电压脉冲的序列来唤起分别指示存储器单元的非易失性和易失性极化状态但不改变所述极化状态的读出信号。印刷的存储器单元可以被覆盖，以通过将所选择的第一逻辑值分配给压印存储器单元并将所转移的存储器单元传送到第二逻辑值来实现在铁电或驻极体存储器件中的存储器件中的数据的临时和易失性存储轻松的挥发性状态，由此可以通过检测分别压印和放松的存储单元的动态响应的差异来区分所存储的逻辑值。

4. 发明申请

WO2000065653A1 A METHOD IN THE FABRICATION OF ORGANIC THIN-FILM SEMICONDUCTING DEVICES 审中-公开
标题翻译：有机薄膜半导体器件的制造方法
公开(公告)号：WO2000065653A1
公开(公告)日：2000-11-02
申请号：PCT/NO2000/000127
申请日：2000-04-14
申请人： THIN FILM ELECTRONICS ASA , ROMAN, Lucimara, Stolz , INGANÄS, Olle , HAGEL, Olle , BERGGREN, Magnus , GUSTAFSSON, Göran , CARLSSON, Johan
发明人： ROMAN, Lucimara, Stolz , INGANÄS, Olle , HAGEL, Olle , BERGGREN, Magnus , GUSTAFSSON, Göran , CARLSSON, Johan
IPC分类号： H01L27/01
CPC分类号： H01L51/424 , H01L51/0036 , H01L51/0037 , H01L51/0038 , Y02E10/549
摘要： In a method in the fabrication of an organic thin-film semiconducting device comprising an electrode arrangement with electrodes contacting a semiconducting organic material, an anode in the electrode arrangement is made as a two-layer structure, where the first layer is a conducting or semiconducting material or a combination thereof deposited on a substrate and a second layer is a conducting polymer with a work function higher than that of the material in the first layer. A third layer consisting of semiconducting organic material and forming the active material of the device is deposited on the top of the anode, and the cathode made of a fourth layer of a metal deposited on a third layer. In a preferred embodiment a low work function metal is used in the first layer, a doped conjugated polymer such as PEDOT-PSS in the second layer, while the cathode may be formed of the same metal as used in the first layer. Use in the manufacturing of the electrode arrangement in an organic thin-film diode or in a transistor structure.
摘要翻译：在制造有机薄膜半导体器件的方法中，包括具有与半导体有机材料接触的电极的电极装置，电极装置中的阳极被制成两层结构，其中第一层是导电或半导体沉积在基底和第二层上的材料或其组合是导电聚合物，其功函数高于第一层中的材料。由半导体有机材料构成并形成器件的活性材料的第三层沉积在阳极的顶部，阴极由沉积在第三层上的第四层金属制成。在优选实施例中，在第一层中使用低功函数金属，在第二层中使用诸如PEDOT-PSS的掺杂共轭聚合物，而阴极可以由与第一层中使用的相同的金属形成。用于制造有机薄膜二极管或晶体管结构中的电极布置。

5. 发明申请

WO2006135246A1 A METHOD IN THE FABRICATION OF A FERROELECTRIC MEMORY DEVICE 审中-公开
标题翻译：一种电磁存储器件制造方法
公开(公告)号：WO2006135246A1
公开(公告)日：2006-12-21
申请号：PCT/NO2006/000215
申请日：2006-06-08
申请人： THIN FILM ELECTRONICS ASA , DYREKLEV, Peter , LEISTAD, Geirr, I. , GUSTAFSSON, Göran
发明人： DYREKLEV, Peter , LEISTAD, Geirr, I. , GUSTAFSSON, Göran
IPC分类号： G11C11/22 , H01L51/40 , H05K3/12
CPC分类号： H01L27/11507 , G11C11/22 , H01L27/11502 , H05K3/12
摘要： In a method in the fabrication of a ferroelectric memory device comprising a memory layer sandwiched between first and second electrode sets, the memory layer as well as both electrode sets are each realized in the memory device by a suitable printing process.
摘要翻译：在制造包含夹在第一和第二电极组之间的存储器层的铁电存储器件的方法中，存储器层以及两个电极组都通过合适的印刷工艺实现在存储器件中。

6. 发明申请

WO2006009462A1 AN ORGANIC FERROELECTRIC OR ELECTRET DEVICE WITH VIA CONNECTIONS AND A METHOD FOR ITS MANUFACTURE 审中-公开
标题翻译：具有连接的有机电气或电气设备及其制造方法
公开(公告)号：WO2006009462A1
公开(公告)日：2006-01-26
申请号：PCT/NO2005/000268
申请日：2005-07-18
申请人： THIN FILM ELECTRONICS ASA , LILJEDAHL, Rickard , GUSTAFSSON, Göran
发明人： LILJEDAHL, Rickard , GUSTAFSSON, Göran
IPC分类号： H01L23/538
CPC分类号： G11C11/22 , B82Y10/00
摘要： In an organic electronic circuit (C), particularly a memory circuit with an organic ferroelectric or electret material (2) the active material comprises fluorine atoms and consists of various organic materials. The active material is located between first and second electrode sets constituting respectively bottom and top electrodes (1 a; l b) of the device. A cell with a capacitor-like structure is defined in the active material (2) and can be accessed for an addressing operation via the electrodes. At least one top electrode (l b) comprises a layer of gold in contact with active material. A second layer (12) on the top electrode (l b) comprises conducting material different from gold or can alternatively also be made of gold. A via connection (13) extends between the second electrode layer (12) and a bottom electrode (1 a) or another electrode (l b) in the bottom electrode layer. In case the second electrode layer (12) is made of gold the via metal of the via connection can also be gold and integral with the second electrode layer (12). In a method for establishing a top via electrode connection in the device (M), a first top electrode layer of gold is deposited and a via hole etched therethrough and down to the bottom electrode layer, and via metal is deposited to form a via connection (13) and then a second top electrode layer (12) is deposited above the first electrode layer of gold and contacting the via connection.
摘要翻译：在有机电子电路（C）中，特别是具有有机铁电或驻极体材料的存储电路（2），活性材料包含氟原子并由各种有机材料组成。活性材料位于构成装置的底部和顶部电极（1a）的第一和第二电极组之间。具有电容器状结构的电池被限定在活性材料（2）中，并且可以通过电极进行寻址操作。至少一个顶部电极（1b）包括与活性材料接触的金属层。顶部电极（1b）上的第二层（12）包括与金不同的导电材料，或者也可以由金制成。通孔连接（13）在底部电极层中在第二电极层（12）和底部电极（1a）或另一个电极（1b）之间延伸。在第二电极层（12）由金制成的情况下，通孔连接的通孔金属也可以是金并且与第二电极层（12）成一体。在用于在器件（M）中建立顶部通孔电极连接的方法中，沉积金的第一顶部电极层，并且蚀刻通孔并向下蚀刻到底部电极层，并且通过金属沉积以形成通孔连接（13），然后在金的第一电极层上方沉积第二顶电极层（12），并接触通孔连接。

7. 发明申请

WO2005093870A1 AN ORGANIC ELECTRONIC DEVICE AND METHODS FOR MANUFACTURING A DEVICE OF THIS KIND 审中-公开
标题翻译：有机电子设备及其制造方法
公开(公告)号：WO2005093870A1
公开(公告)日：2005-10-06
申请号：PCT/NO2005/000101
申请日：2005-03-21
申请人： THIN FILM ELECTRONICS ASA , SANDBERG, Mats , NORDAL, Per-Erik , GRECZYNSKI, Grzegorz , JOHANSSON, Mats , CARLSEN, Per , GUDESEN, Hans, Gude , GUSTAFSSON, Göran , ANDERSSON, Linda
发明人： SANDBERG, Mats , NORDAL, Per-Erik , GRECZYNSKI, Grzegorz , JOHANSSON, Mats , CARLSEN, Per , GUDESEN, Hans, Gude , GUSTAFSSON, Göran , ANDERSSON, Linda
IPC分类号： H01L51/30
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/55 , H01L51/0025 , H01L51/0026 , H01L51/0034 , H01L51/0043 , H01L51/005
摘要： An organic electronic device consists of one or more electro-active organic or polymer materials sandwiched between electrodes. Critical in such devices is the interface between the electrode and the polymer, where degradation or chemical reaction products may develop that are deleterious to the proper functioning of the device. This is solved by introducing a functional interlayer composed of one or more materials consisting of a molecular backbone bearing phosphonate or phosphate functions, either directly attached or through side chains, said functional layer being disposed between at least one of the respective electrodes and said one or more electro-active materials in the device.
摘要翻译：有机电子器件由夹在电极之间的一种或多种电活性有机或聚合物材料组成。在这种装置中的关键是电极和聚合物之间的界面，其中可能产生对装置的正常功能有害的降解或化学反应产物。这通过引入由一种或多种由含有膦酸酯或磷酸酯官能团的分子骨架组成的材料构成的功能性夹层来解决，直接连接或通过侧链，所述功能层设置在至少一个相应的电极之间，更多的电活性材料在设备中。

8. 发明申请

WO2003107351A1 A METHOD FOR MAKING A FERROELECTRIC MEMORY CELL IN A FERROELECTRIC MEMORY DEVICE, AND A FERROELECTRIC MEMORY DEVICE 审中-公开
标题翻译：一种用于在电磁存储器件中制造电介质存储器单元的方法，以及一种电磁存储器件
公开(公告)号：WO2003107351A1
公开(公告)日：2003-12-24
申请号：PCT/NO2003/000198
申请日：2003-06-16
申请人： THIN FILM ELECTRONICS ASA , LJUNGCRANTZ, Henrik , EDVARDSSON, Niclas , CARLSSON, Johan , GUSTAFSSON, Göran
发明人： LJUNGCRANTZ, Henrik , EDVARDSSON, Niclas , CARLSSON, Johan , GUSTAFSSON, Göran
IPC分类号： G11C11/22
CPC分类号： H01L21/32051 , H01L27/11502
摘要： In a method for making ferroelectric memory cells in a ferroelectric memory device a first electrode comprising at least one metal layer and optionally at least one metal oxide layer is formed on a silicon substrate which has an optional insulating layer of silicon dioxide. A ferroelectric layer consisting of a thin film of ferroelectric polymer is formed on the top of the first electrode layer and at least a second electrode comprising at least one metal layer and at least one metal oxide layer is formed on the ferroelectric layer. The second electrode is deposited by thermal evaporation of a high-purity evaporation source from an effusion cell onto the ferroelectric layer in a vacuum chamber filled with a gas or a gas mixture. A ferroelectric memory device wherein the memory cell has been made with the above method, comprises at least a first and a second set of respectively parallel electrodes (510; 530), wherein the electrodes (510; 530) in a set are provided orthogonally to the electrodes (530; 510) of a nearest following set and with memory cells formed in a ferroelectric layer (520) provided between successive electrode sets, such that memory cells are defined in the crossings between the electrodes (510; 530) which contact the ferroelectric layer (520) on each side thereof.
摘要翻译：在铁电存储器件中制造铁电存储单元的方法中，在具有任选的二氧化硅绝缘层的硅衬底上形成包括至少一个金属层和任选的至少一个金属氧化物层的第一电极。在第一电极层的顶部形成由铁电聚合物薄膜构成的铁电层，并且在铁电层上形成至少包含至少一个金属层和至少一个金属氧化物层的第二电极。通过在填充有气体或气体混合物的真空室中将高纯度蒸发源从渗出室热蒸发到铁电层上来沉积第二电极。具有上述方法制造的存储单元的铁电存储器件包括至少第一组和第二组分别平行的电极（510; 530），其中一组中的电极（510; 530）正交于电极（530; 510），其具有形成在连续电极组之间的铁电层（520）中的存储单元，使得存储单元限定在电极（510; 530）之间的交叉点铁电层（520）。

9. 发明申请

WO2006073308A1 METHOD FOR OPERATING A PASSIVE MATRIX-ADDRESSABLE FERROELECTRIC OR ELECTRET MEMORY DEVICE 审中-公开
标题翻译：一种无源矩阵可寻址的电磁存储器件的操作方法
公开(公告)号：WO2006073308A1
公开(公告)日：2006-07-13
申请号：PCT/NO2005/000001
申请日：2005-01-04
申请人： THIN FILM ELECTRONICS ASA , KARLSSON, Christer , GUSTAFSSON, Göran , JOHANSSON, Mats , SANDSTRÖM, Per , NORDAL, Per-Erik , GUDESEN, Hans, Gude , CARLSSON, Johan
发明人： KARLSSON, Christer , GUSTAFSSON, Göran , JOHANSSON, Mats , SANDSTRÖM, Per , NORDAL, Per-Erik , GUDESEN, Hans, Gude , CARLSSON, Johan
IPC分类号： G11C11/22 , G11C16/34 , G11C7/00
CPC分类号： G11C11/22
摘要： In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.
摘要翻译：在用于操作无源矩阵寻址铁电或驻极体存储器件的方法中，使用基于1/3电压选择规则的电压脉冲协议以便将干扰电压保持在最小值，所述电压脉冲协议包括用于读取和写入的周期根据具有规定参数的电压脉冲的时间顺序进行擦除。该方法包括刷新过程，其中选择用于刷新的单元和由存储器件控制器处理的刷新请求，关于正在进行或调度的存储器操作来监视和处理刷新请求，并且将具有定义参数的刷新电压脉冲施加到存储器选择用于刷新的单元，同时确保未选择的存储单元经受零电压或不影响这些单元极化状态的电压。

10. 发明申请

WO2006009463A1 ELECTRICAL VIA CONNECTION AND ASSOCIATION CONTACT MEANS AS WELL AS A METHOD FOR THEIR MANUFACTURE 审中-公开
标题翻译：电气通过连接和联系方式作为其制造方法
公开(公告)号：WO2006009463A1
公开(公告)日：2006-01-26
申请号：PCT/NO2005/000269
申请日：2005-07-18
申请人： THIN FILM ELECTRONICS ASA , LILJEDAHL, Rickard , GUSTAFSSON, Göran
发明人： LILJEDAHL, Rickard , GUSTAFSSON, Göran
IPC分类号： H01L23/538
CPC分类号： H01L51/0021
摘要： An electrical via connection and associated contact means in an organic electronic circuit, particularly a memory circuit is provided interfacing a layer of active organic dielectric material comprising various organic compounds. The via connection is provided in a via opening extending through the active dielectic material and connected with first and second electrical contact means on either side thereof. The second contact means comprises a first layer of chemically inert and non-reactive conducting material deposited directly on active dielectric layer, and a conducting material provided as a second layer over the first layer and in via opening down to the first contact means, creating a via connection through the active dielectric layer and connecting the first and the second contact means. In a method for manufacturing an electric via connection and associated contact means of this kind, a first layer in a second contact means is deposited on the active dielectric layer. The first layer consists of a chemically inert and non-reactive conducting material. A via opening is formed through the active dielectric layer of the second contact means consisting of a conducting material is deposited over the first layer and in the via opening to establish the desired via connection therethrough.
摘要翻译：提供有机电子电路中的电通孔连接和相关的接触装置，特别是存储电路，其连接包含各种有机化合物的活性有机介电材料层。通孔连接设置在延伸穿过有源介电材料并且与其两侧的第一和第二电接触装置连接的通孔中。第二接触装置包括直接沉积在有源电介质层上的化学惰性和非反应性导电材料的第一层，以及在第一层上设置为第二层的导电材料，以及通向第一接触装置的通孔，通过有源电介质层的连接并连接第一和第二接触装置。在用于制造电通孔连接和这种相关联的接触装置的方法中，第二接触装置中的第一层沉积在有源电介质层上。第一层由化学惰性和非反应性导电材料组成。通过第二接触装置的有源电介质层形成通孔，该电介质层由导电材料构成，沉积在第一层上并在通孔开口中以建立所需的通孔连接。

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