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1. 发明申请

WO2005101419A1 BIMODAL OPERATION OF FERRROELECTRIC AND ELECTRET MEMORY CELLS AND DEVICES 审中-公开
标题翻译：微电子和电子存储器电池和器件的双重操作
公开(公告)号：WO2005101419A1
公开(公告)日：2005-10-27
申请号：PCT/NO2005/000119
申请日：2005-04-12
申请人： THIN FILM ELECTRONICS ASA , GUDESEN, Hans, Gude , LEISTAD, Geirr, I. , ENGQUIST, Isak , GUSTAFSSON, Göran
发明人： GUDESEN, Hans, Gude , LEISTAD, Geirr, I. , ENGQUIST, Isak , GUSTAFSSON, Göran
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： In a method for enhancing the data storage capability of ferroelectric or electret memory cell which has been applied to storage of data and attained an imprint condition, suitable voltage pulses are used for evoking a temporary relaxation of the imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state in a non-destructive readout operation. Sequences of one or more voltage pulses are used to evoke readout signals respectively indicative of a non-volatile and a volatile polarization state of the memory cell, but without altering said polarization states. Imprinted memory cells can be overwritten to effect a temporary and volatile storage of data in a memory device in a ferroelectric or electret memory device by assigning a first logical value to imprinted memory cells and a second logical value by transferring selected to memory cells transferred into a relaxed volatile state, whereby the stored logical values can be discriminated by the detecting the difference in dynamic response of respectively imprinted and relaxed memory cells.
摘要翻译：在用于增强已经应用于数据存储和达到印记条件的铁电或驻极体存储单元的数据存储能力的方法中，使用适当的电压脉冲来引起压印条件的暂时放宽到易挥发的极化状态，在非破坏性读出操作中与印刻偏振状态区分开来。使用一个或多个电压脉冲的序列来唤起分别指示存储器单元的非易失性和易失性极化状态但不改变所述极化状态的读出信号。印刷的存储器单元可以被覆盖，以通过将所选择的第一逻辑值分配给压印存储器单元并将所转移的存储器单元传送到第二逻辑值来实现在铁电或驻极体存储器件中的存储器件中的数据的临时和易失性存储轻松的挥发性状态，由此可以通过检测分别压印和放松的存储单元的动态响应的差异来区分所存储的逻辑值。

2. 发明申请

WO2004025658A1 A METHOD FOR OPERATING A FERROELECTRIC OR ELECTRET MEMORY DEVICE, AND A DEVICE OF THIS KIND 审中-公开
标题翻译：一种用于操作电磁或电子存储器件的方法，以及该类型的器件
公开(公告)号：WO2004025658A1
公开(公告)日：2004-03-25
申请号：PCT/NO2003/000312
申请日：2003-09-10
申请人： THIN FILM ELECTRONICS ASA , GUDESEN, Hans, Gude , NORDAL, Per-Erik , LEISTAD, Geirr, I. , BRÖMS, Per , SANDSTRÖM, Per , JOHANSSON, Mats
发明人： GUDESEN, Hans, Gude , NORDAL, Per-Erik , LEISTAD, Geirr, I. , BRÖMS, Per , SANDSTRÖM, Per , JOHANSSON, Mats
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： In a method for operating a matrix-addressable ferroelectric or electret memory device a first plurality of voltage differences is applied across first and second sets of electrodes when data are read from the memory cells thereof and a second plurality of voltage differences is applied across the first and, second sets of electrodes in the case where data are refreshed or rewritten to the memory cells. In each case the first and second plurality of voltage differences correspond to sets of potential levels as predefined by a voltage pulse protocol comprising time sequences of voltage pulses. At least one parameter indicative of a change in a memory cell response is determined and used for determining at least one correction factor for the voltage pulses, whereby at least one pulse parameter thereof is adjusted in accordance with the at least one correction factor. The invention also relates to a ferroelectric or electret memory device for implementing the above method.
摘要翻译：在用于操作矩阵寻址铁电或驻极体存储器件的方法中，当从其存储器单元读取数据时，在第一组和第二组电极上施加第一组多个电压差，并且第二组电压差跨越第一以及在将数据刷新或重写到存储单元的情况下的第二组电极。在每种情况下，第一和第二多个电压差对应于由包括电压脉冲的时间序列的电压脉冲协议预定义的电位电平集合。确定表示存储器单元响应的变化的至少一个参数，并用于确定电压脉冲的至少一个校正因子，由此根据至少一个校正因子调整其至少一个脉冲参数。本发明还涉及用于实现上述方法的铁电或驻极体存储器件。

3. 发明申请

WO2003081602A1 A VOLUMETRIC DATA STORAGE APPARATUS COMPRISING A PLURALITY OF STACKED MATRIX-ADDRESSABLE MEMORY DEVICES 审中-公开
标题翻译：包含堆叠矩阵可寻址存储器件的大容量数据存储设备
公开(公告)号：WO2003081602A1
公开(公告)日：2003-10-02
申请号：PCT/NO2003/000097
申请日：2003-03-21
申请人： THIN FILM ELECTRONICS ASA , LEISTAD, Geirr, I. , GUDESEN, Hans, Gude
发明人： LEISTAD, Geirr, I. , GUDESEN, Hans, Gude
IPC分类号： G11C11/22
CPC分类号： G11C8/14 , G11C11/22 , H01L21/84 , H01L27/12
摘要： In a volumetric data storage apparatus comprising a plurality of stacked matrix-addressable memory devices (M) electrode means (E) are provided so as to form alternating word and bit line means (WL; BL) for the memory devices, whereby the number of the electrode means is only one more than the number of memory devices. Moreover adjoining electrode means (E k , E k+1 ) are arranged in such a manner as to furnish a high proportion of memory cells (6) which can be switched in two or more directions, thus yielding a much higher output when addressed and having an improved signal-to-noise ratio. Each memory device (M) can, due to having a dense electrode arrangement, be provided with an attainable memory cell fill factor approaching unity and half the memory cells can in case be provided switchable in two or more directions, such that the fill factor of these in any case shall approach 0.5. A volumetric data storage apparatus with a very high storage density can hence be obtained, while several of the problems encountered with prior art stacked memory devices are obviated.
摘要翻译：在包括多个堆叠的矩阵寻址存储器件（M）的电荷装置（E）的体积数据存储装置中，为了形成用于存储器件的交替字和位线装置（WL; BL），电极装置仅比存储器件的数量多一个。此外，邻接的电极装置（Ek，Ek + 1）被布置成提供可以在两个或更多个方向上切换的高比例的存储器单元（6），从而在寻址时产生高得多的输出，并且具有提高信噪比。每个存储器件（M）可以由于具有致密电极布置而被提供有接近于单位的可实现的存储单元填充因子，并且一半存储器单元可以在两个或更多个方向上切换，使得填充因子这些在任何情况下应接近0.5。因此，可以获得具有非常高的存储密度的体积数据存储装置，同时消除了现有技术的堆叠式存储装置遇到的几个问题。

4. 发明申请

WO2003043013A1 A MATRIX-ADDRESSABLE OPTOELECTRONIC APPARATUS AND ELECTRODE MEANS IN THE SAME 审中-公开
标题翻译：矩阵可寻址光电装置和电极在其中
公开(公告)号：WO2003043013A1
公开(公告)日：2003-05-22
申请号：PCT/NO2002/000398
申请日：2002-11-01
申请人： THIN FILM ELECTRONICS ASA , GUDESEN, Hans, Gude , LEISTAD, Geirr, I. , NORDAL, Per-Erik
发明人： GUDESEN, Hans, Gude , LEISTAD, Geirr, I. , NORDAL, Per-Erik
IPC分类号： G11C5/02
CPC分类号： H01L51/5203 , G02F1/134336 , G11C11/42 , H01L27/156 , H01L27/307 , H01L27/3281 , H01L2251/5392
摘要： In a matrix-addressable optoelectronic apparatus comprising a functional medium in the form of an optoelectronically active material (3) provided in a global layer in sandwich between a first and second electrode means (EMl,EM2) with parallel strip-like electrodes (1; 2) wherein the electrodes (2) of the second electrode means (EM2) are oriented at an angle to the electrodes (1) of the first electrode means (EM2), functional elements (5) are formed in the active material where respective electrodes (1, 2) overlap and correspond to optically active pixels (5) in a display device or pixels (5) in an optical detector, depending upon the active material (3) used. In each of the electrode means (EM1; EM2) the electrodes (1; 2) are provided in a dense parallel configuration and mutually insulated by a thin film (6) with a thickness that is only a fraction of the width of the electrodes. This allows for a fill factor of pixels (5) in the active material (3) approaching unity and a corresponding high degree of pixellation, thus providing either a display with a high surface brightness and high resolution or an optical detector with high sensitivity and high resolution.
摘要翻译：在一种矩阵可寻址的光电子装置中，该光电子装置包括光电活性材料（3）形式的功能介质，该功能介质设置在具有平行条状电极（1; 1）的第一和第二电极装置（EM1，EM2） 2）其中第二电极装置（EM2）的电极（2）与第一电极装置（EM2）的电极（1）成一角度定向，功能元件（5）形成在活性材料中，其中各个电极（1,2）重叠并且对应于显示装置中的光学有源像素（5）或光学检测器中的像素（5），这取决于所使用的活性材料（3）。在每个电极装置（EM1; EM2）中，电极（1; 2）设置成密集的平行构造，并且通过薄膜（6）相互绝缘，其厚度仅为电极宽度的一部分。这允许活性材料（3）中的像素（5）的填充因子接近一致，并且具有相应的高像素度，从而提供具有高表面亮度和高分辨率的显示器或具有高灵敏度和高的光学检测器解析度。

5. 发明申请

WO2002069340A1 NON-DESTRUCTIVE READOUT 审中-公开
标题翻译：非破坏性阅读
公开(公告)号：WO2002069340A1
公开(公告)日：2002-09-06
申请号：PCT/NO2002/000066
申请日：2002-02-15
申请人： THIN FILM ELECTRONICS ASA , NORDAL, Per-Erik , GUDESEN, Hans, Gude , LEISTAD, Geirr, I.
发明人： NORDAL, Per-Erik , GUDESEN, Hans, Gude , LEISTAD, Geirr, I.
IPC分类号： G11C7/12
CPC分类号： G11C11/22 , G11C11/16
摘要： In a method for determining the logic state of memory cells in a passive matrix-addressable data storage device with word and bit lines, components of current response are detected and correlated with a probing voltage, and a time-dependent potential is applied on selected word and bit lines or groups thereof, said potentials being mutually coordinated in magnitude and time such that the resulting voltages across all or some of the non-addressed cells at the crossing points between inactive word lines and active bit lines are brought to contain only negligible voltage components that are temporally correlated with the probing voltage. A first apparatus according to the invention for performing the method provides sequential readout of all memory cells on an active word line (AWL) by means of detection circuits (3; 4). An active word line (AWL) is selected by a multiplexer (7), while inactive word lines (IWL) are clamped to ground during readout. A second apparatus for performing the method is rather similar, but has only a single detection circuit (3, 4). An active word line (AWL) is selected by multiplexer (7) and a bit line (ABL) is selected by a multiplexer (9) provided between one end of the bit lines (BL) and the input of the detection circuit (3, 4), while inactive word and bit lines (IWL; IBL) are clamped to ground during readout.
摘要翻译：在确定具有字和位线的无源矩阵可寻址数据存储设备中的存储器单元的逻辑状态的方法中，检测电流响应的分量并与探测电压相关联，并且将时间依赖电位施加到所选择的字所述电位在幅度和时间上相互协调，使得在非活动字线和有源位线之间的交叉点上的所有或一些非寻址单元的结果电压仅被包含可忽略的电压与探测电压暂时相关的分量。根据本发明的用于执行该方法的第一装置通过检测电路（3; 4）提供有源字线（AWL）上的所有存储单元的顺序读出。有源字线（AWL）由多路复用器（7）选择，而无效字线（IWL）在读出期间被钳位到地。用于执行该方法的第二装置相当类似，但是仅具有单个检测电路（3,4）。有源字线（AWL）由多路复用器（7）选择，位线（ABL）由设在位线（BL）的一端和检测电路（3）的输入端之间的多路复用器（9）选择， 4），而无效字和位线（IWL; IBL）在读出期间被钳位到地。

6. 发明申请

WO2006004421A1 OPERATING TEMPERATURE OPTIMIZATION IN A FERROELECTRIC OR ELECTRET MEMORY 审中-公开
标题翻译：在电磁或电气存储器中操作温度优化
公开(公告)号：WO2006004421A1
公开(公告)日：2006-01-12
申请号：PCT/NO2005/000238
申请日：2005-06-29
申请人： THIN FILM ELECTRONICS ASA , NORDAL, Per-Erik , LEISTAD, Geirr, I. , BRÖMS, Per , GUDESEN, Hans, Gude
发明人： NORDAL, Per-Erik , LEISTAD, Geirr, I. , BRÖMS, Per , GUDESEN, Hans, Gude
IPC分类号： H01L23/34
CPC分类号： G11C29/021 , G11C11/22 , G11C29/02 , G11C29/028 , G11C2029/5002
摘要： In a heating and temperature control system for a data storage apparatus comprising at least one matrix-addressable ferroelectric or electret memory device, Joule heating means are provided in the memory device, a temperature determining means is connected with controller circuitry and the controller circuitry is connected with an external power supply, which controlled by the former powers the Joule heating means to achieve a selected operating temperature. In a method for operating the heating and temperature control system an ambient or instant temperature of the memory device is determined and compared with the set nominal optimal temperature, and the difference between these temperatures is used in a predefined algorithm for establishing control parameters for the application of power to the Joule heating means to achieve the selected operating temperature in the memory device during an addressing operation thereto.
摘要翻译：在包括至少一个可矩阵寻址的铁电或驻极体存储装置的数据存储装置的加热和温度控制系统中，在存储装置中提供焦耳加热装置，温度确定装置与控制器电路连接，并且控制器电路被连接具有外部电源，由前者的焦炭控制，焦耳加热意味着实现选定的工作温度。在用于操作加热和温度控制系统的方法中，确定存储器件的环境温度或即时温度并将其与设定的标称最佳温度进行比较，并且在用于建立应用的控制参数的预定义算法中使用这些温度之间的差异的焦耳加热装置的功率，以在其寻址操作期间实现存储装置中的选定的工作温度。

7. 发明申请

WO2006135246A1 A METHOD IN THE FABRICATION OF A FERROELECTRIC MEMORY DEVICE 审中-公开
标题翻译：一种电磁存储器件制造方法
公开(公告)号：WO2006135246A1
公开(公告)日：2006-12-21
申请号：PCT/NO2006/000215
申请日：2006-06-08
申请人： THIN FILM ELECTRONICS ASA , DYREKLEV, Peter , LEISTAD, Geirr, I. , GUSTAFSSON, Göran
发明人： DYREKLEV, Peter , LEISTAD, Geirr, I. , GUSTAFSSON, Göran
IPC分类号： G11C11/22 , H01L51/40 , H05K3/12
CPC分类号： H01L27/11507 , G11C11/22 , H01L27/11502 , H05K3/12
摘要： In a method in the fabrication of a ferroelectric memory device comprising a memory layer sandwiched between first and second electrode sets, the memory layer as well as both electrode sets are each realized in the memory device by a suitable printing process.
摘要翻译：在制造包含夹在第一和第二电极组之间的存储器层的铁电存储器件的方法中，存储器层以及两个电极组都通过合适的印刷工艺实现在存储器件中。

8. 发明申请

WO2006135245A1 A DATA STORAGE DEVICE 审中-公开
标题翻译：数据存储设备
公开(公告)号：WO2006135245A1
公开(公告)日：2006-12-21
申请号：PCT/NO2006/000214
申请日：2006-06-08
申请人： THIN FILM ELECTRONICS ASA , LEISTAD, Geirr, I. , BRÖMS, Per , KARLSSON, Christer
发明人： LEISTAD, Geirr, I. , BRÖMS, Per , KARLSSON, Christer
IPC分类号： G06K19/067 , G06K1/12 , G06K7/06 , G06K7/08
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non- volatile electric memory system a card-like memory unit (10) and a read/write unit (11) are provided as physically separate units. The memory unit (10) is based on a memory material (4) that can be set to at least two distinct physical states by applying an electric field across the memory material. The read/write unit (10) comprises contact means (9) provided in a determined geometrical pattern enabling a definition of memory cells in memory unit (10) in an initial write operation, the memory cells being located in a geometrical pattern corresponding to that of the contact means (9). Establishing a physical contact between the memory unit (10) and the read/write unit (11) closes an electrical circuit over an addressed memory cell such that read, write or erase operations can be effected. The memory material (4) of the memory unit (10) can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.
摘要翻译：在非易失性电存储器系统中，作为物理上分离的单元提供了卡状存储器单元（10）和读/写单元（11）。存储器单元（10）基于可通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料（4）。读/写单元（10）包括以确定的几何图案提供的接触装置（9），使得能够在初始写入操作中对存储器单元（10）中的存储器单元进行定义，存储器单元位于与其对应的几何图案的接触装置（9）。在存储器单元（10）和读/写单元（11）之间建立物理接触通过寻址的存储单元封闭电路，从而可以实现读，写或擦除操作。存储单元（10）的存储材料（4）可以是铁电或驻极体材料，其可以被极化成两个可识别的极化状态，或者它可以是具有阻抗特性的材料，使得材料的存储单元可以通过施加电场来设定为特定的稳定电阻值。

9. 发明申请

WO2006135247A1 A DATA STORAGE DEVICE 审中-公开
标题翻译：数据存储设备
公开(公告)号：WO2006135247A1
公开(公告)日：2006-12-21
申请号：PCT/NO2006/000216
申请日：2006-06-08
申请人： THIN FILM ELECTRONICS ASA , BRÖMS, Per , KARLSSON, Christer , LEISTAD, Geirr, I.
发明人： BRÖMS, Per , KARLSSON, Christer , LEISTAD, Geirr, I.
IPC分类号： G06K19/067 , G06K1/12 , G06K7/06 , G06K19/06 , G06K7/08
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.
摘要翻译：在非易失性电存储器系统中，存储单元和读/写单元被提供为物理上分离的单元。存储器单元基于可以通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料。电极装置和/或接触装置被提供在存储器单元或读/写单元中，并且接触装置至少总是设置在读/写单元中。电极和触点以几何布置提供，其几何地限定存储器层中的一个或多个存储器单元。读/写单元中的接触装置可连接到位于读/写单元中的驱动，感测和控制装置或与其连接的外部设备。在存储器单元和读/写单元之间建立物理接触关闭寻址的存储单元上的电路，从而可以实现读，写或擦除操作。存储单元的存储材料可以是铁电或驻极体材料，其可以被极化成两个可识别的极化状态，或者其可以是具有电阻阻抗特性的材料，使得材料的存储单元可以被设置为特定的稳定通过施加电场的电阻值。

10. 发明申请

WO2004086406A1 SENSE AMPLIFIER SYSTEMS AND A MATRIX-ADDRESSABLE MEMORY DEVICE PROVIDED THEREWITH 审中-公开
标题翻译： SENSE放大器系统和提供的矩阵可寻址存储器件
公开(公告)号：WO2004086406A1
公开(公告)日：2004-10-07
申请号：PCT/NO2004/000086
申请日：2004-03-25
申请人： THIN FILM ELECTRONICS ASA , SCHWEICKERT, Robert , LEISTAD, Geirr, I.
发明人： SCHWEICKERT, Robert , LEISTAD, Geirr, I.
IPC分类号： G11C7/06
CPC分类号： G11C7/062 , G11C11/22 , G11C2207/063
摘要： A sense amplifier system for sensing the charge of a charge-storing means (601) comprises a first and second charge reference means (600a, 600b) connected in parallel and similar to the charge-storing means (601) and having respectively opposite polarization. The charge reference means (600a, 600b) and the charge-storing means (601) have a common input node (WL), and first and second pseudo-differential reference sense amplifiers (RSA1, RSA2) are connected with output nodes (RBL1, RBL2) of the charge reference means (600a, 600b) for generating reference signals to a common reference node (CHREF) connected with a pseudo-differential sense amplifier (SA). The pseudo-differential sense amplifier (SA) has a second input for receiving an output signal from the charge-storing means (601) and generates an output signal indicative of a polarization state of the charge-storing means. Another embodiment adapted for sensing the charges of a plurality of charge-storing means (701) and comprising at least two pairs of charge reference means is also described. A non-volatile matrix-addressable memory system comprising an electrical polarizable dielectric memory material exhibiting hysterisis and a sense amplifier system as described is also claimed.
摘要翻译：用于感测电荷存储装置（601）的电荷的感测放大器系统包括并联连接并类似于电荷存储装置（601）并具有相反偏振的第一和第二电荷参考装置（600a，600b）。充电参考装置（600a，600b）和电荷存储装置（601）具有公共输入节点（WL），并且第一和第二伪差分参考读出放大器（RSA1，RSA2）与输出节点（RBL1，用于将参考信号产生到与伪差分读出放大器（SA）连接的公共参考节点（CHREF）的电荷参考装置（600a，600b）的RBL2）。伪差分读出放大器（SA）具有用于从电荷存储装置（601）接收输出信号的第二输入端，并产生指示电荷存储装置的极化状态的输出信号。还描述了适于感测多个电荷存储装置（701）的电荷并且包括至少两对电荷参考装置的另一实施例。还要求保护包括表现迟滞的电极化电介质存储材料和所述读出放大器系统的非易失性矩阵寻址存储器系统。

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