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1. 发明授权

US07683747B2 MEMS RF-switch using semiconductor 失效
标题翻译：使用半导体的MEMS射频开关
公开(公告)号：US07683747B2
公开(公告)日：2010-03-23
申请号：US11179460
申请日：2005-07-13
申请人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
发明人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H2059/0018
摘要： A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.
摘要翻译：提供了用于控制AC信号的传输的接通/断开的MEMS RF开关。本发明的MEMS RF开关包括：耦合到电源的一个端子的第一电极; 与所述第一电极的上表面组合的半导体层，并且当从所述电源施加偏置信号时，形成电位势垒以变得绝缘; 以及第二电极，设置在距离半导体层预定距离处，并且耦合到电源的另一个端子，其中当从电源施加偏置信号时，第二电极接触半导体层。因此，尽管偏置信号可能不会被切断，但自由电子和空穴在半导体层中重新结合，从而可以防止电荷积累和粘附。

2. 发明申请

US20100059346A1 RF NANOSWITCH 有权
公开(公告)号：US20100059346A1
公开(公告)日：2010-03-11
申请号：US12619393
申请日：2009-11-16
申请人： Dong-ha SHIM , Kuang-woo Nam , Seok-chul Yun , In-sang Song
发明人： Dong-ha SHIM , Kuang-woo Nam , Seok-chul Yun , In-sang Song
IPC分类号： H01H57/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , H01H1/0094 , Y10S977/708
摘要： An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.
摘要翻译： RF纳米开关可以减少射频信号的损耗。 RF纳米开关包括连接到驱动电源的一个端子的第一电极单元，连接到驱动电源的另一个端子的第二电极和选择性地与第一电极单元和第二电极，取决于是否从驱动电源施加电力。

3. 发明授权

US07663450B2 Monolithic duplexer 有权
标题翻译：单片双工器
公开(公告)号：US07663450B2
公开(公告)日：2010-02-16
申请号：US11262889
申请日：2005-11-01
申请人： Yun-kwon Park , In-sang Song , Seok-chul Yun , Seog-woo Hong , Byeoung-ju Ha , Dong-ha Shim , Hae-seok Park , Kuang-woo Nam , Duck-hwan Kim
发明人： Yun-kwon Park , In-sang Song , Seok-chul Yun , Seog-woo Hong , Byeoung-ju Ha , Dong-ha Shim , Hae-seok Park , Kuang-woo Nam , Duck-hwan Kim
IPC分类号： H03H9/70
CPC分类号： H03H3/02 , H03H9/0571 , H03H9/706 , Y10T29/42 , Y10T29/43 , Y10T29/4902 , Y10T29/49155
摘要： A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.
摘要翻译：公开了一种超小型高性能单片双工器。单片双工器包括基板，形成在基板的上表面上的第一区域中的透射端滤光器，形成在基板的上表面上的第二区域中的接收端滤光器，粘合在基板上的封装基板在封装状态下将发送端滤波器和接收端滤波器封装在基板的上表面上的区域，以及形成在封装基板的一个表面上并与发送端滤波器连接的移相器接收端滤波器分别用于截取发送端滤波器与接收端滤波器之间的信号流入。

4. 发明授权

US07638790B2 RF nanoswitch 有权
标题翻译：射频纳米开关
公开(公告)号：US07638790B2
公开(公告)日：2009-12-29
申请号：US11252590
申请日：2005-10-19
申请人： Dong-ha Shim , Kuang-woo Nam , Seok-chul Yun , In-sang Song
发明人： Dong-ha Shim , Kuang-woo Nam , Seok-chul Yun , In-sang Song
IPC分类号： H01L29/06
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , H01H1/0094 , Y10S977/708
摘要： An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.
摘要翻译： RF纳米开关可以减少射频信号的损耗。 RF纳米开关包括连接到驱动电源的一个端子的第一电极单元，连接到驱动电源的另一个端子的第二电极和选择性地与第一电极单元和第二电极，取决于是否从驱动电源施加电力。

5. 发明授权

US07224245B2 Duplexer fabricated with monolithic FBAR and isolation part and a method thereof 有权
标题翻译：用单片FBAR和隔离部分制造的双工器及其方法
公开(公告)号：US07224245B2
公开(公告)日：2007-05-29
申请号：US10989403
申请日：2004-11-17
申请人： In-sang Song , Byeoung-ju Ha , Yun-kwon Park , Kuang-woo Nam , Dong-ha Shim
发明人： In-sang Song , Byeoung-ju Ha , Yun-kwon Park , Kuang-woo Nam , Dong-ha Shim
IPC分类号： H03H9/70 , H03H3/02
CPC分类号： H03H9/173 , H03H9/0571 , H03H9/564 , H03H9/706 , Y10T29/42
摘要： A duplexer having a filter and an isolation part which are integrally formed including a substrate, a transmitter filter integrated on the substrate to pass signals only in a frequency band for transmission, a receiver filter integrated on the substrate to pass signals only in a frequency band for reception, and an isolation part integrally formed with either one of the transmitter filter and the receiver filter to isolate the signals passed through the transmitter filter and the receiver filter from each other. Since the isolation part is integrally formed with either one of the transmitter filter and the receiver filter, the duplexer can be manufactured in a small size by simplified processes.
摘要翻译：一种具有滤波器和隔离部分的双工器，其一体形成包括基板，集成在基板上的发射器滤波器，仅在用于传输的频带中传递信号;集成在基板上的接收滤波器，以仅在频带中传递信号以及与发射机滤波器和接收机滤波器中的任一个整体形成的隔离部分，以将通过发射机滤波器和接收机滤波器的信号彼此隔离。由于隔离部分与发射器滤波器和接收器滤波器中的任一个整体形成，所以可以通过简化的处理将双工器制造成小尺寸。

6. 发明申请

US20070024396A1 Integrated filter including FBAR and saw resonator and fabrication method therefor 有权
标题翻译：集成滤波器，包括FBAR和锯片谐振器及其制造方法
公开(公告)号：US20070024396A1
公开(公告)日：2007-02-01
申请号：US11448707
申请日：2006-06-08
申请人： Kuang-woo Nam , Kook-hyun Sunwoo , In-sang Song , Sang-wook Kwon , Duck-hwan Kim , Chul-soo Kim , Sang-chul Sul , Yun-kwon Park , Hae-seok Park , Jea-shik Shin , Dong-ha Shim , Young-tack Hong , Jong-seok Kim , Seok-mo Chang , Seok-Chul Yun
发明人： Kuang-woo Nam , Kook-hyun Sunwoo , In-sang Song , Sang-wook Kwon , Duck-hwan Kim , Chul-soo Kim , Sang-chul Sul , Yun-kwon Park , Hae-seok Park , Jea-shik Shin , Dong-ha Shim , Young-tack Hong , Jong-seok Kim , Seok-mo Chang , Seok-Chul Yun
IPC分类号： H03H9/56
CPC分类号： H03H9/588 , H03H3/02 , H03H9/02228 , H03H2003/0071
摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.
摘要翻译：一种包括膜体声波谐振器（FBAR）和表面声波（SAW）谐振器的集成滤波器以及一体化滤波器的制造方法。集成滤波器包括：基板; 位于所述基板的上表面上的预定第一区域中的第一电极; 位于所述第一电极上的第一压电层; 位于所述第一压电层上的第二电极; 位于所述基板的上表面上的预定的第二区域中的第二压电层; 和位于第二压电层上的至少一个数字间换能器（IDT）电极。 IDT电极包括：在第二压电层上形成为梳状结构的第一IDT电极; 以及在第二压电层上形成为梳状结构的第二IDT电极，以便与第一IDT电极啮合。第一和第二压电层由相同的材料形成。因此，可以使在各种频带中工作的集成滤波器紧凑。

7. 发明授权

US07122942B2 Electrostatic RF MEMS switches 有权
标题翻译：静电RF MEMS开关
公开(公告)号：US07122942B2
公开(公告)日：2006-10-17
申请号：US10951612
申请日：2004-09-29
申请人： In-sang Song , Young-il Kim , Moon-chul Lee , Dong-ha Shim , Young-tack Hong , Sun-hee Park , Kuang-woo Nam
发明人： In-sang Song , Young-il Kim , Moon-chul Lee , Dong-ha Shim , Young-tack Hong , Sun-hee Park , Kuang-woo Nam
IPC分类号： H01L41/08
CPC分类号： H01P1/127 , H01H57/00 , H01H59/0009 , H01H2057/006
摘要： A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.
摘要翻译：一种具有介电层的微型开关，具有形成在基板上的移动区域，形成在所述移动区域的预定部分上的导电层，形成在所述导电层上的电介质膜，在所述电介质上形成预定距离的第一和第二导电体膜，形成在移动区域上的一个或两个下电极，以及在两个下电极之上形成预定距离的一个或两个上电极，一个或两个上电极在静电力发生时向上移动导电层和电介质膜上电极和下电极，并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。这种微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。

8. 发明申请

US20050040486A1 Electrostatic RF MEMS switches 有权
标题翻译：静电RF MEMS开关
公开(公告)号：US20050040486A1
公开(公告)日：2005-02-24
申请号：US10951612
申请日：2004-09-29
申请人： In-sang Song , Young-il Kim , Moon-chul Lee , Dong-ha Shim , Young-tack Hong , Sun-hee Park , Kuang-woo Nam
发明人： In-sang Song , Young-il Kim , Moon-chul Lee , Dong-ha Shim , Young-tack Hong , Sun-hee Park , Kuang-woo Nam
IPC分类号： B81B3/00 , H01H57/00 , H01H59/00 , H01L29/417 , H01L41/09 , H01P1/12 , H01L21/76
CPC分类号： H01P1/127 , H01H57/00 , H01H59/0009 , H01H2057/006
摘要： A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.
摘要翻译：一种具有介电层的微型开关，具有形成在基板上的移动区域，形成在所述移动区域的预定部分上的导电层，形成在所述导电层上的电介质膜，在所述电介质上形成预定距离的第一和第二导电体膜，形成在移动区域上的一个或两个下电极，以及在两个下电极之上形成预定距离的一个或两个上电极，一个或两个上电极在静电力发生时向上移动导电层和电介质膜上电极和下电极，并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。这种微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。

9. 发明授权

US08720023B2 Method of manufacturing a monolithic duplexer 有权
标题翻译：制造单片双工器的方法
公开(公告)号：US08720023B2
公开(公告)日：2014-05-13
申请号：US12647188
申请日：2009-12-24
申请人： Yun-kwon Park , In-sang Song , Seok-chul Yun , Seog-woo Hong , Byeoung-ju Ha , Dong-ha Shim , Hae-seok Park , Kuang-woo Nam , Duck-hwan Kim
发明人： Yun-kwon Park , In-sang Song , Seok-chul Yun , Seog-woo Hong , Byeoung-ju Ha , Dong-ha Shim , Hae-seok Park , Kuang-woo Nam , Duck-hwan Kim
IPC分类号： H03H9/15 , H03H3/007
CPC分类号： H03H3/02 , H03H9/0571 , H03H9/706 , Y10T29/42 , Y10T29/43 , Y10T29/4902 , Y10T29/49155
摘要： A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.
摘要翻译：公开了一种用于制造超小型高性能单片双工器的方法。该方法包括在基板上的绝缘层的上表面上沉积和图案化下电极，以暴露绝缘层的第一部分; 在暴露的绝缘层和下电极的上表面上沉积压电层; 在所述压电层的上部沉积金属并图案化所述金属以形成谐振部分和微调电感器，其中所述下部电极电耦合所述谐振部分和所述微调电感器; 通过在谐振部分下蚀刻衬底来形成空腔来制造气隙型FBAR（膜体声共振）; 以及将封装基板接合在所述基板上，所述封装基板具有基本上防止所述气隙型FBAR之间的信号流入的相移部。

10. 发明授权

US07816662B2 RF nanoswitch 有权
标题翻译：射频纳米开关
公开(公告)号：US07816662B2
公开(公告)日：2010-10-19
申请号：US12619393
申请日：2009-11-16
申请人： Dong-ha Shim , Kuang-woo Nam , Seok-chul Yun , In-sang Song
发明人： Dong-ha Shim , Kuang-woo Nam , Seok-chul Yun , In-sang Song
IPC分类号： H01L29/06
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , H01H1/0094 , Y10S977/708
摘要： An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.
摘要翻译： RF纳米开关可以减少射频信号的损耗。 RF纳米开关包括连接到驱动电源的一个端子的第一电极单元，连接到驱动电源的另一个端子的第二电极和选择性地与第一电极单元和第二电极，取决于是否从驱动电源施加电力。

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