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1. 发明授权

US07683747B2 MEMS RF-switch using semiconductor 失效
标题翻译：使用半导体的MEMS射频开关
公开(公告)号：US07683747B2
公开(公告)日：2010-03-23
申请号：US11179460
申请日：2005-07-13
申请人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
发明人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H2059/0018
摘要： A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.
摘要翻译：提供了用于控制AC信号的传输的接通/断开的MEMS RF开关。本发明的MEMS RF开关包括：耦合到电源的一个端子的第一电极; 与所述第一电极的上表面组合的半导体层，并且当从所述电源施加偏置信号时，形成电位势垒以变得绝缘; 以及第二电极，设置在距离半导体层预定距离处，并且耦合到电源的另一个端子，其中当从电源施加偏置信号时，第二电极接触半导体层。因此，尽管偏置信号可能不会被切断，但自由电子和空穴在半导体层中重新结合，从而可以防止电荷积累和粘附。

2. 发明申请

US20060012940A1 MEMS RF-switch using semiconductor 失效
标题翻译：使用半导体的MEMS射频开关
公开(公告)号：US20060012940A1
公开(公告)日：2006-01-19
申请号：US11179460
申请日：2005-07-13
申请人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
发明人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
IPC分类号： H01L21/683
CPC分类号： H01H59/0009 , H01H2059/0018
摘要： A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.
摘要翻译：提供了用于控制AC信号的传输的接通/断开的MEMS RF开关。本发明的MEMS RF开关包括：耦合到电源的一个端子的第一电极; 与所述第一电极的上表面组合的半导体层，并且当从所述电源施加偏置信号时，形成电位势垒以变得绝缘; 以及第二电极，设置在距离半导体层预定距离处，并且耦合到电源的另一个端子，其中当从电源施加偏置信号时，第二电极接触半导体层。因此，尽管偏置信号可能不会被切断，但自由电子和空穴在半导体层中重新结合，从而可以防止电荷积累和粘附。

3. 发明授权

US07911300B2 MEMS RF-switch using semiconductor 失效
标题翻译：使用半导体的MEMS射频开关
公开(公告)号：US07911300B2
公开(公告)日：2011-03-22
申请号：US12697629
申请日：2010-02-01
申请人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
发明人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H2059/0018
摘要： A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.
摘要翻译：提供了用于控制AC信号的传输的接通/断开的MEMS RF开关。本发明的MEMS RF开关包括：耦合到电源的一个端子的第一电极; 与所述第一电极的上表面组合的半导体层，并且当从所述电源施加偏置信号时，形成电位势垒以变得绝缘; 以及第二电极，设置在距离半导体层预定距离处，并且耦合到电源的另一个端子，其中当从电源施加偏置信号时，第二电极接触半导体层。因此，尽管偏置信号可能不会被切断，但自由电子和空穴在半导体层中重新结合，从而可以防止电荷积累和粘附。

4. 发明申请

US20100133077A1 MEMS RF-SWITCH USING SEMICONDUCTOR 失效
公开(公告)号：US20100133077A1
公开(公告)日：2010-06-03
申请号：US12697629
申请日：2010-02-01
申请人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
发明人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , H01H2059/0018
摘要： A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.
摘要翻译：提供了用于控制AC信号的传输的接通/断开的MEMS RF开关。本发明的MEMS RF开关包括：耦合到电源的一个端子的第一电极; 与所述第一电极的上表面组合的半导体层，并且当从所述电源施加偏置信号时，形成电位势垒以变得绝缘; 以及第二电极，设置在距离半导体层预定距离处，并且耦合到电源的另一个端子，其中当从电源施加偏置信号时，第二电极接触半导体层。因此，尽管偏置信号可能不会被切断，但自由电子和空穴在半导体层中重新结合，从而可以防止电荷积累和粘附。

5. 发明申请

US20120318875A1 INTERNAL VOLTAGE GENERATING CIRCUIT AND SMART CARD 有权
标题翻译：内部电压产生电路和智能卡
公开(公告)号：US20120318875A1
公开(公告)日：2012-12-20
申请号：US13523518
申请日：2012-06-14
申请人： Jong-pil Cho , Il-jong Song , Sang-hyo Lee
发明人： Jong-pil Cho , Il-jong Song , Sang-hyo Lee
IPC分类号： G05F3/02 , G06K19/073
CPC分类号： G06K19/0715 , G05F1/56 , G06K19/0723 , G06K19/07769
摘要： An internal voltage generating circuit includes a first voltage application unit, a second voltage application unit, a first regulator, a second regulator, and a controller. The first and second voltage application units respectively provide a first voltage and a second voltage. The controller generates a bulk voltage, a first control signal, and a second control signal from the first and second voltages. The first regulator is enabled or disabled according to the first control signal and generates and outputs the first internal voltage based on the bulk voltage, the first voltage, and a first reference voltage. The second regulator is enabled or disabled according to the second control signal and generates and outputs the second internal voltage based on the bulk voltage, the second voltage, and a second reference voltage.
摘要翻译：内部电压产生电路包括第一电压施加单元，第二电压施加单元，第一调节器，第二调节器和控制器。第一和第二电压施加单元分别提供第一电压和第二电压。控制器从第一和第二电压产生体电压，第一控制信号和第二控制信号。第一调节器根据第一控制信号被使能或禁止，并且基于体电压，第一电压和第一参考电压产生并输出第一内部电压。第二调节器根据第二控制信号被使能或禁止，并且基于体电压，第二电压和第二参考电压产生并输出第二内部电压。

6. 发明授权

US07893792B2 Duplexer using an embedded PCB and method of fabricating the same 有权
标题翻译：使用嵌入式PCB的双工器及其制造方法
公开(公告)号：US07893792B2
公开(公告)日：2011-02-22
申请号：US10923086
申请日：2004-08-23
申请人： Jun-sik Hwang , Yun-kwon Park , Il-jong Song , Byeoung-ju Ha
发明人： Jun-sik Hwang , Yun-kwon Park , Il-jong Song , Byeoung-ju Ha
IPC分类号： H03H9/54 , H01P1/213
CPC分类号： H03H9/706 , H01L2224/16235 , H01L2224/81192 , H01L2924/15313 , H01L2924/16251 , H01P1/213 , H03H9/0571 , H05K1/0243 , H05K1/162 , H05K1/165 , H05K3/429 , H05K3/4652 , H05K2201/0959 , H05K2201/1006 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/4913 , Y10T29/49165
摘要： A high-integrated duplexer and a fabrication method thereof. The duplexer has a first filter to pass a signal of a transmitted frequency band, a second filter to pass a signal of a received frequency band, an embedded PCB having the first and second filters bonded on a certain area of a surface of an upper side in a predetermined distance from each other, and an isolation part to prevent a signal interference between the first and second filters, and a packaging substrate to package the entire upper side of the embedded PCB so that the packaging substrate is located above and separated from the first and second filters by a predetermined distance. The fabricated high-integrated duplexer has a small size and high performance.
摘要翻译：高集成双工器及其制造方法。双工器具有通过发送频带的信号的第一滤波器，传递接收频带的信号的第二滤波器，具有第一和第二滤波器的嵌入式PCB，该第一和第二滤波器接合在上侧表面的某一区域上隔离部分，以防止第一和第二滤光器之间的信号干扰，以及封装基板，以封装嵌入式PCB的整个上侧，使得封装基板位于上方并与之分离第一和第二滤光器预定距离。制造的高集成双工器具有小尺寸和高性能。

7. 发明申请

US20080096361A1 STRUCTURE FOR REALIZING INTEGRATED CIRCUIT HAVING SCHOTTKY DIODE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：用于实现具有肖特基二极管的集成电路的结构及其制造方法
公开(公告)号：US20080096361A1
公开(公告)日：2008-04-24
申请号：US11963354
申请日：2007-12-21
申请人： Ja-nam KU , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
发明人： Ja-nam KU , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
IPC分类号： H01L21/20
CPC分类号： H01L29/872 , H01L27/0788
摘要： An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
摘要翻译：一体形成多个肖特基二极管和电容器的集成电路结构。集成电路结构包括：衬底，其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层，使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层，使得第二导电层与第一导电层和电介质层一起形成电容器。因此，当在整流电路中使用集成电路结构时，可以减小整个电路的尺寸。

8. 发明申请

US20080055091A1 Oscillator tuning system and oscillator tuning method 有权
标题翻译：振荡器调谐系统和振荡器调谐方法
公开(公告)号：US20080055091A1
公开(公告)日：2008-03-06
申请号：US11651576
申请日：2007-01-10
申请人： Il-jong Song , Young-hoon Min , Chol-su Yoon
发明人： Il-jong Song , Young-hoon Min , Chol-su Yoon
IPC分类号： G08B13/14 , H04Q5/22
CPC分类号： H01Q1/2225 , G06K7/10237 , G06K19/0723 , G06K19/0724 , G06K19/0726 , H01Q7/00
摘要： An oscillator tuning system and an oscillator tuning method are provided. The system includes a determination unit which determines whether a power which is used in an RFID tag having an RFID oscillator is greater than a reference value; and a frequency tuner which tunes a driving frequency of the RFID oscillator according to a result of the determination. The method includes determining whether a power which is used in an RFID tag having an RFID oscillator is greater than a reference value; and tuning a driving frequency of the RFID oscillator according to a result of the determination.
摘要翻译：提供振荡器调谐系统和振荡器调谐方法。该系统包括确定单元，其确定在具有RFID振荡器的RFID标签中使用的功率是否大于参考值; 以及频率调谐器，其根据确定的结果来调谐RFID振荡器的驱动频率。该方法包括确定在具有RFID振荡器的RFID标签中使用的功率是否大于参考值; 以及根据所述确定的结果调整所述RFID振荡器的驱动频率。

9. 发明申请

US20070139290A1 RFID tag and RFID system having the same 审中-公开
标题翻译： RFID标签和RFID系统具有相同的功能
公开(公告)号：US20070139290A1
公开(公告)日：2007-06-21
申请号：US11489634
申请日：2006-07-20
申请人： Il-jong Song , Yuri Tikhov , Young-hoon Min
发明人： Il-jong Song , Yuri Tikhov , Young-hoon Min
IPC分类号： H01Q1/50 , G08B13/14 , H01Q9/16
CPC分类号： H01Q1/2216
摘要： A radio frequency identification tag (RFID) that extends a read range of an RFID reader, and an RFID system including the RFID tag. The RFID tag includes a tag antenna, an IC, and a bonding part electrically connecting the tag antenna to the IC. A complex conjugate of an impedance of the tag antenna is a value obtained by adding an impedance of the IC to an impedance of the bonding part. Thus, the RFID tag can achieve accurate impedance matching between the tag antenna and the bonding, smoothly perform data communication with the RFID reader, and extend the read range of the RFID reader.
摘要翻译：扩大RFID读取器的读取范围的射频识别标签（RFID）和包括RFID标签的RFID系统。 RFID标签包括标签天线，IC，以及将标签天线与IC电连接的接合部。标签天线的阻抗的复共轭是通过将IC的阻抗与接合部的阻抗相加而获得的值。因此，RFID标签可以实现标签天线与接合之间的精确阻抗匹配，平滑地执行与RFID读取器的数据通信，并且扩展RFID读取器的读取范围。

10. 发明授权

US07205702B2 Film bulk acoustic resonator and method for manufacturing the same 有权
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US07205702B2
公开(公告)日：2007-04-17
申请号：US10929569
申请日：2004-08-31
申请人： Byeoung-ju Ha , Yun-kwon Park , In-sang Song , Il-jong Song , Jong-seok Kim , Duck-hwan Kim , Jun-sik Hwang
发明人： Byeoung-ju Ha , Yun-kwon Park , In-sang Song , Il-jong Song , Jong-seok Kim , Duck-hwan Kim , Jun-sik Hwang
IPC分类号： H01L41/04 , H01L41/08
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02133 , H03H2003/021 , Y10T29/42 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49135 , Y10T29/49155
摘要： A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.
摘要翻译：一种薄膜体声波谐振器及其制造方法。薄膜体声波谐振器包括基板，气相沉积在基板上的保护层，气相沉积在保护层上并距离基板的上侧预定距离的膜，以及气相沉积在膜。此外，制造方法包括在基板上气相沉积膜，在膜的两侧形成保护层，在膜上气相沉积层叠的共振部分，并且通过去除设置在膜之间的基板的一部分来形成气隙保护层。因此，膜可以以简单的结构形成并且没有应力，并且整个制造过程被简化。

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