会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
    • 深紫外光发射装置及其制造深紫外光发射装置的方法
    • US08772757B2
    • 2014-07-08
    • US12030539
    • 2008-02-13
    • David Todd EmersonMichael John BergmannAmber AbareKevin Haberern
    • David Todd EmersonMichael John BergmannAmber AbareKevin Haberern
    • H01L29/06
    • H01L33/12B82Y20/00H01L33/06H01L33/32
    • Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA/μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.
    • 提供发光装置和制造发射波长小于360nm,壁塞效率至少为4%的发光装置的方法。 墙壁插头效率可以至少为5%或至少为6%。 还提供了发光装置和制造发射波长小于345nm并具有至少2%壁塞效率的发光装置的方法。 提供发光装置和制造发射波长小于330nm,壁塞效率至少为0.4%的发光器件的方法。 具有峰值输出波长不大于360nm和输出功率至少为5mW的发光器件的发光器件和方法,具有345nm或更小的峰值输出波长和至少3mW的输出功率 还提供了在小于约0.35μA/μm2的电流密度下的330nm或更小的峰值输出波长和至少0.3mW的输出功率。 半导体发光器件可以具有至少100小时,至少500小时或至少1000小时的直流电寿命。