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1. 发明申请

US20120268743A1 LASER CHARACTERIZATION SYSTEM AND PROCESS 失效
标题翻译：激光特性系统与工艺
公开(公告)号：US20120268743A1
公开(公告)日：2012-10-25
申请号：US13303648
申请日：2011-11-23
申请人： Yin Wang , Gerard P. Wysocki , Feng Xie , Chung-En Zah
发明人： Yin Wang , Gerard P. Wysocki , Feng Xie , Chung-En Zah
IPC分类号： G01N21/25 , F21V13/12 , F21V13/10
CPC分类号： H01S5/0042 , B82Y20/00 , G01J1/0403 , G01J1/0407 , G01J1/0414 , G01J3/021 , G01J3/1804 , G01J2001/4247 , G01R31/2635 , H01S5/141 , H01S5/3401
摘要： A system and process for automatically characterizing a plurality of external cavity semiconductor laser chips on a semiconductor laser bar separated from a semiconductor wafer. The system includes a diffraction grating and a steering mirror mounted on a rotary stage for rotating the diffraction grating through a range of diffraction angles. A laser bar positioning stage for automatically aligning each laser chip in a laser bar with the diffraction grating. Reflecting a laser beam emitted from a laser chip in a laser bar with diffraction grating and steering mirror to the laser analyzer. Automatically rotating the diffraction grating through a range of diffraction angles relative to the laser beam and automatically characterizing the laser optical properties such as spectra, power, or spatial modes with the laser analyzer at each diffraction angle.
摘要翻译：一种用于在与半导体晶片分离的半导体激光棒上自动表征多个外腔半导体激光器芯片的系统和工艺。该系统包括安装在旋转台上的衍射光栅和转向镜，用于通过衍射角范围旋转衍射光栅。激光棒定位台，用于将激光棒中的每个激光芯片与衍射光栅自动对准。将激光棒中的激光芯片的衍射光栅和导向反射镜的激光束反射到激光分析仪。通过相对于激光束的衍射角自动旋转衍射光栅，并自动表征激光光学性质，如激光分析仪在每个衍射角度下的光谱，功率或空间模式。

2. 发明授权

US08198112B2 Laser diodes comprising QWI output window and waveguide areas and methods of manufacture 失效
标题翻译：包括QWI输出窗口和波导区域的激光二极管以及制造方法
公开(公告)号：US08198112B2
公开(公告)日：2012-06-12
申请号：US12760092
申请日：2010-04-14
申请人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
发明人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
IPC分类号： H01L21/00 , H01L31/0256
CPC分类号： B82Y20/00 , H01S5/0092 , H01S5/06256 , H01S5/162 , H01S2302/00
摘要： In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength λL. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength λQWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength λL. The QWI output window is characterized by a photoluminescent wavelength λPL. The manufacturing process comprises a λPL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength λL and the photoluminescent wavelength λPL of the QWI output window. Additional embodiments are disclosed and claimed.
摘要翻译：根据本公开的一个实施例，提供了制造包括增益部分，QWI输出窗口和QWI波导区域的半导体激光二极管的工艺。使用量子阱混合制造QWI波导区域，并在激光二极管的QWI输出窗口中定义QWI波导部分。 QWI输出窗口对于激光波长λL是透明的。 QWI输出窗口中的QWI波导部分的特征在于能量带隙大于增益部分的能带隙，使得QWI波导部分和QWI输出窗口中的带隙波长λQWI比激光波长λL短。 QWI输出窗口的特征在于光致发光波长λPL。该制造工艺包括λPL筛选方案，其基于激光波长λL和QWI输出窗口的光致发光波长λPL的比较来确定激光二极管的可靠性。公开并要求保护附加实施例。

3. 发明申请

US20110255567A1 Laser Diodes Comprising QWI Output Window and Waveguide Areas and Methods of Manufacture 失效
标题翻译：包括QWI输出窗口和波导区域的激光二极管和制造方法
公开(公告)号：US20110255567A1
公开(公告)日：2011-10-20
申请号：US12760092
申请日：2010-04-14
申请人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
发明人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
IPC分类号： H01S5/34 , H01L21/66 , H01L21/02
CPC分类号： B82Y20/00 , H01S5/0092 , H01S5/06256 , H01S5/162 , H01S2302/00
摘要： In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength λL. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength λQWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength λL. The QWI output window is characterized by a photoluminescent wavelength λPL. The manufacturing process comprises a λPL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength λL and the photoluminescent wavelength λPL of the QWI output window. Additional embodiments are disclosed and claimed.
摘要翻译：根据本公开的一个实施例，提供了制造包括增益部分，QWI输出窗口和QWI波导区域的半导体激光二极管的工艺。使用量子阱混合制造QWI波导区域，并在激光二极管的QWI输出窗口中定义QWI波导部分。 QWI输出窗口对于激光波长λL是透明的。 QWI输出窗口中的QWI波导部分的特征在于能量带隙大于增益部分的能带隙，使得QWI波导部分和QWI输出窗口中的带隙波长λQWI比激光波长λL短。 QWI输出窗口的特征在于光致发光波长λPL。该制造工艺包括λPL筛选方案，其基于激光波长λL和QWI输出窗口的光致发光波长λPL的比较来确定激光二极管的可靠性。公开并要求保护附加实施例。

4. 发明申请

US20100265982A1 Fracture Resistant Metallization Pattern For Semiconductor Lasers 有权
标题翻译：半导体激光器的耐断裂金属化模式
公开(公告)号：US20100265982A1
公开(公告)日：2010-10-21
申请号：US12426563
申请日：2009-04-20
申请人： Satish Chandra Chaparala , Martin Hai Hu , Lawrence Charles Hughes, JR. , Chung-En Zah
发明人： Satish Chandra Chaparala , Martin Hai Hu , Lawrence Charles Hughes, JR. , Chung-En Zah
IPC分类号： H01S5/00 , H01S5/026
CPC分类号： H01S5/0425 , H01S5/0092 , H01S5/06256
摘要： Metallization patterns are provided to reduce the probability of chip fracture in semiconductor lasers. According to one embodiment disclosed herein, the pad edges of a metallization pattern extend across a plurality of crystallographic planes in the laser substrate. In this manner, cracks initiated at any given stress concentration would need to propagate across many crystallographic planes in the substrate to reach a significant size. Additional embodiments of the present disclosure relate to the respective geometries and orientations of adjacent pairs of contact pads. Still further embodiments are disclosed and claimed.
摘要翻译：提供金属化模式以减少半导体激光器中芯片断裂的可能性。根据本文公开的一个实施例，金属化图案的焊盘边缘延伸穿过激光基板中的多个结晶平面。以这种方式，在任何给定的应力集中开始的裂纹将需要传播到衬底中的许多结晶平面以达到显着的尺寸。本公开的另外的实施例涉及相邻的接触垫对的各自的几何形状和取向。公开和要求保护的另外的实施例。

5. 发明申请

US20090101924A1 Gallium nitride semiconductor device on SOI and process for making same 失效
标题翻译： SOI上的氮化镓半导体器件及其制造方法
公开(公告)号：US20090101924A1
公开(公告)日：2009-04-23
申请号：US11975289
申请日：2007-10-18
申请人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
发明人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/007 , H01L21/76254
摘要： Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.
摘要翻译：用于制造绝缘体上的氮化镓半导体的方法和装置包括：将单晶硅层结合到透明基板; 并在单晶硅层上生长单晶氮化镓层。

6. 发明授权

US07480317B2 Thermal compensation in semiconductor lasers 失效
标题翻译：半导体激光器的热补偿
公开(公告)号：US07480317B2
公开(公告)日：2009-01-20
申请号：US11526988
申请日：2006-09-26
申请人： Martin Hai Hu , Daniel Ohen Ricketts , Chung-En Zah
发明人： Martin Hai Hu , Daniel Ohen Ricketts , Chung-En Zah
IPC分类号： H01S3/10 , H01S3/04
CPC分类号： H01S5/06804 , H01S5/0612 , H01S5/06256
摘要： The present invention relates to relates generally to semiconductor lasers and, more particularly, to schemes for measuring and controlling the temperature of semiconductor lasers and schemes for wavelength stabilization of semiconductor lasers. According to one embodiment of the present invention, a method of driving a temperature control mechanism in a semiconductor laser is provided. According to the method, signals representing an operating temperature of the semiconductor laser and ambient temperature are generated and a target laser operating temperature that is a function of the ambient temperature signal is established. A temperature control mechanism of the semiconductor laser is then driven to increase a degree of correlation between the operating temperature signal and the target laser operating temperature. Additional embodiments are disclosed and claimed.
摘要翻译：本发明一般涉及半导体激光器，更具体地，涉及用于测量和控制半导体激光器的温度和半导体激光器的波长稳定化方案的方案。根据本发明的一个实施例，提供了一种驱动半导体激光器中的温度控制机构的方法。根据该方法，产生表示半导体激光器的工作温度和环境温度的信号，建立作为环境温度信号的函数的目标激光器工作温度。然后驱动半导体激光器的温度控制机构以增加工作温度信号和目标激光器工作温度之间的相关程度。公开并要求保护附加实施例。

7. 发明申请

US20080299495A1 Methods of fabricating metal contact structures for laser diodes using backside UV exposure 有权
标题翻译：使用背面UV曝光制造激光二极管的金属接触结构的方法
公开(公告)号：US20080299495A1
公开(公告)日：2008-12-04
申请号：US11809117
申请日：2007-05-31
申请人： Jingqun Xi , Chung-En Zah
发明人： Jingqun Xi , Chung-En Zah
IPC分类号： G03C5/00
CPC分类号： G03F7/20 , H01S5/0425
摘要： Methods of fabricating a metal contact structure for a laser diodes are provided, wherein the method comprises providing a UV transparent semiconductor substrate, a UV transparent semiconductor epilayer defining a ridge disposed between etched epilayer edges, the epilayer being disposed over the UV transparent semiconductor substrate, and a UV opaque metal layer disposed over the epilayer ridge, applying at least one photoresist layer (positive photoresist, image reversal photoresist, or negative photoresist) over the opaque metal layer and epilayer edges, and selectively developing regions of the photoresist layer via backside exposure to UV light with the opaque metal layer used as a photolithographic mask.
摘要翻译：提供了制造用于激光二极管的金属接触结构的方法，其中所述方法包括提供UV透明半导体衬底，UV透明半导体外延层，限定设置在蚀刻的外延层边缘之间的脊，所述外延层设置在所述UV透明半导体衬底上，以及设置在所述外延层脊上的UV不透明金属层，在所述不透明金属层和外延层边缘上施加至少一个光致抗蚀剂层（正性光致抗蚀剂，图像反转光致抗蚀剂或负性光刻胶），以及通过背面曝光选择性地显影所述光致抗蚀剂层的区域以不透明金属层作为光刻掩模使用UV光。

8. 发明授权

US07072376B2 Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom 有权
标题翻译：制造基于InP的垂直腔表面发射激光器的方法及其制造的装置
公开(公告)号：US07072376B2
公开(公告)日：2006-07-04
申请号：US10944649
申请日：2004-09-16
申请人： Catherine G Caneau , Benjamin L Hall , Nobuhiko Nishiyama , Chung-En Zah
发明人： Catherine G Caneau , Benjamin L Hall , Nobuhiko Nishiyama , Chung-En Zah
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/34306 , H01S5/34313
摘要： A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the photon energy corresponding to the selected operating wavelength, selecting a maximum operating temperature in degrees Centigrade, and fabricating at least half of the high index layers of the distributed Bragg reflector (DBR) of the VCSEL from AlGaInAs or other material that can be epitaxially grown on the InP substrate to have a band gap equal to or greater than the sum of the photon energy (in milli-electron volts) plus the sum of the maximum operating temperature plus 110 divided by 1.96. The manufacture of the high index layers with such a band gap creates a sufficient difference in the indices of refraction of the alternating layers in the DBR, while keeping optical absorption low to maintain the reflectivity at least up to the desired maximum temperature, and obviates the need for using a DBR either bonded to the InP substrate, or grown metamorphically on it.
摘要翻译：一种制造具有高反射率分布布拉格反射器（DBR）的磷化铟基垂直腔表面发射激光器（VCSEL）的方法，其特别适用于发射中心波长约1.30微米的光。该方法包括以下步骤：选择特定的工作波长，确定对应于所选择的工作波长的光子能量，以摄氏度选择最大工作温度，以及制造分布式布拉格反射器（DBR）的至少一半的高折射率层，的来自AlGaInAs的VCSEL或可以在InP衬底上外延生长的其它材料，以具有等于或大于光子能量（以毫电子伏特）加上最大工作温度加和110之和的带隙除以1.96。具有这种带隙的高折射率层的制造在DBR中的交替层的折射率产生足够的差异，同时保持光吸收低以保持反射率至少达到期望的最高温度，并且消除需要使用结合到InP底物的DBR，或者在其上变质生长。

9. 发明授权

US06618409B1 Passivation of semiconductor laser facets 有权
标题翻译：钝化半导体激光刻面
公开(公告)号：US06618409B1
公开(公告)日：2003-09-09
申请号：US09564015
申请日：2000-05-03
申请人： Martin (Hai) Hu , Lyle D. Kinney , Emmannuel C. Onyiriuka , Mike X. Ouyang , Chung-en Zah
发明人： Martin (Hai) Hu , Lyle D. Kinney , Emmannuel C. Onyiriuka , Mike X. Ouyang , Chung-en Zah
IPC分类号： H01S500
CPC分类号： H01L33/44 , H01S5/028 , H01S5/0282
摘要： A method of passivating an edge-emitting semiconductor diode laser and the resultant product. Laser bars are cleaved in air from a wafer containing multiple laser bars. The bars are placed into a vacuum processing chamber in which two steps are performed without breaking vacuum. The first step includes cleaning the facets including removing the native oxide by, for example, a low-energy ion beam or by an electron cyclotron resonance (EAR) plasma containing hydrogen and possibly argon or xenon with the bars being negatively biased. The second step includes coating the cleaned facets with a thin passivation layer of hydrogenated amorphous silicon (a-Si:H), whereby the facets are coating by the passivation layer without an intervening oxide. A low oxygen partial pressure of no more than 10−8 Torr is maintained between the cleaning and deposition, both of which preferably are done in the same chamber. Also preferably, anti-reflective or highly reflective coatings are deposited on the facets without returning the laser bars to air.
摘要翻译：钝化边缘发射半导体二极管激光器和所得产物的方法。激光棒在含有多个激光棒的晶片的空气中被切割。将条放置在真空处理室中，其中执行两个步骤而不破坏真空。第一步包括清洁小平面，包括通过例如低能离子束或通过电子回旋共振（EAR）等离子体除去天然氧化物，所述等离子体包含氢气和可能的氩或氙气，其中所述条被负偏压。第二步包括使用氢化非晶硅（a-Si：H）的薄钝化层涂覆清洁的小平面，由此该面被钝化层涂覆而没有中间氧化物。在清洁和沉积之间保持不超过10-8托的低氧分压，这两者优选在相同的室中进行。还优选地，防反射或高反射涂层沉积在刻面上，而不将激光条返回到空气中。

10. 发明授权

US06075592A Fiber-optics based micro-photoluminescence system 有权
标题翻译：基于光纤的微光致发光系统
公开(公告)号：US06075592A
公开(公告)日：2000-06-13
申请号：US174729
申请日：1998-10-19
申请人： Sonali Banerjee , Chung-en Zah
发明人： Sonali Banerjee , Chung-en Zah
IPC分类号： G01J1/58 , G01J3/44 , G01N21/64 , G01R31/26 , G01R31/265 , G01J3/30
CPC分类号： G01J3/4406 , G01J1/58 , G01N21/6489 , G01R31/2648 , G01R31/2656
摘要： Spatially resolved photoluminescence (PL) apparatus is used for the non-destructive characterization of a semiconductor sample. PL excitation from a diode laser is transmitted through a dichroic coupler and, in turn, over a fiber to a fiber collimator wherein the laser light is collimated into a pump beam prior to entering an air path. The air path is composed primarily of an objective lens. The objective lens focuses the pump beam on the sample surface. The photoluminescence signal emitted by the sample travels the same path but in the opposite direction as the pump beam and is collected by the same fiber as a reflected signal. The dichroic fiber coupler is used to separate the return signal from the pump beam with a low insertion loss for each beam. The return PL signal is fed to an optical spectrum analyzer using a single mode fiber connected to the coupler. The sample is placed on a rotational stage capable of x, y and z movement under computer control.
摘要翻译：空间分辨光致发光（PL）装置用于半导体样品的非破坏性表征。来自二极管激光器的PL激发通过二向色耦合器传输，并且依次通过光纤到达光纤准直器，其中激光在进入空气路径之前被准直成泵浦光束。空气路径主要由物镜组成。物镜将泵浦光束聚焦在样品表面上。由样品发射的光致发光信号行进与泵浦光束相同的路径，但是与反射信号相同的光纤收集。二向色光纤耦合器用于将每个光束的反射信号与泵浦光束分离，具有低插入损耗。使用连接到耦合器的单模光纤将返回PL信号馈送到光谱分析仪。将样品放置在能够在计算机控制下进行x，y和z运动的旋转台上。

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