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1. 发明授权

US06618409B1 Passivation of semiconductor laser facets 有权
标题翻译：钝化半导体激光刻面
公开(公告)号：US06618409B1
公开(公告)日：2003-09-09
申请号：US09564015
申请日：2000-05-03
申请人： Martin (Hai) Hu , Lyle D. Kinney , Emmannuel C. Onyiriuka , Mike X. Ouyang , Chung-en Zah
发明人： Martin (Hai) Hu , Lyle D. Kinney , Emmannuel C. Onyiriuka , Mike X. Ouyang , Chung-en Zah
IPC分类号： H01S500
CPC分类号： H01L33/44 , H01S5/028 , H01S5/0282
摘要： A method of passivating an edge-emitting semiconductor diode laser and the resultant product. Laser bars are cleaved in air from a wafer containing multiple laser bars. The bars are placed into a vacuum processing chamber in which two steps are performed without breaking vacuum. The first step includes cleaning the facets including removing the native oxide by, for example, a low-energy ion beam or by an electron cyclotron resonance (EAR) plasma containing hydrogen and possibly argon or xenon with the bars being negatively biased. The second step includes coating the cleaned facets with a thin passivation layer of hydrogenated amorphous silicon (a-Si:H), whereby the facets are coating by the passivation layer without an intervening oxide. A low oxygen partial pressure of no more than 10−8 Torr is maintained between the cleaning and deposition, both of which preferably are done in the same chamber. Also preferably, anti-reflective or highly reflective coatings are deposited on the facets without returning the laser bars to air.
摘要翻译：钝化边缘发射半导体二极管激光器和所得产物的方法。激光棒在含有多个激光棒的晶片的空气中被切割。将条放置在真空处理室中，其中执行两个步骤而不破坏真空。第一步包括清洁小平面，包括通过例如低能离子束或通过电子回旋共振（EAR）等离子体除去天然氧化物，所述等离子体包含氢气和可能的氩或氙气，其中所述条被负偏压。第二步包括使用氢化非晶硅（a-Si：H）的薄钝化层涂覆清洁的小平面，由此该面被钝化层涂覆而没有中间氧化物。在清洁和沉积之间保持不超过10-8托的低氧分压，这两者优选在相同的室中进行。还优选地，防反射或高反射涂层沉积在刻面上，而不将激光条返回到空气中。

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