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1. 发明授权

US08198112B2 Laser diodes comprising QWI output window and waveguide areas and methods of manufacture 失效
标题翻译：包括QWI输出窗口和波导区域的激光二极管以及制造方法
公开(公告)号：US08198112B2
公开(公告)日：2012-06-12
申请号：US12760092
申请日：2010-04-14
申请人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
发明人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
IPC分类号： H01L21/00 , H01L31/0256
CPC分类号： B82Y20/00 , H01S5/0092 , H01S5/06256 , H01S5/162 , H01S2302/00
摘要： In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength λL. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength λQWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength λL. The QWI output window is characterized by a photoluminescent wavelength λPL. The manufacturing process comprises a λPL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength λL and the photoluminescent wavelength λPL of the QWI output window. Additional embodiments are disclosed and claimed.
摘要翻译：根据本公开的一个实施例，提供了制造包括增益部分，QWI输出窗口和QWI波导区域的半导体激光二极管的工艺。使用量子阱混合制造QWI波导区域，并在激光二极管的QWI输出窗口中定义QWI波导部分。 QWI输出窗口对于激光波长λL是透明的。 QWI输出窗口中的QWI波导部分的特征在于能量带隙大于增益部分的能带隙，使得QWI波导部分和QWI输出窗口中的带隙波长λQWI比激光波长λL短。 QWI输出窗口的特征在于光致发光波长λPL。该制造工艺包括λPL筛选方案，其基于激光波长λL和QWI输出窗口的光致发光波长λPL的比较来确定激光二极管的可靠性。公开并要求保护附加实施例。

2. 发明申请

US20110255567A1 Laser Diodes Comprising QWI Output Window and Waveguide Areas and Methods of Manufacture 失效
标题翻译：包括QWI输出窗口和波导区域的激光二极管和制造方法
公开(公告)号：US20110255567A1
公开(公告)日：2011-10-20
申请号：US12760092
申请日：2010-04-14
申请人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
发明人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
IPC分类号： H01S5/34 , H01L21/66 , H01L21/02
CPC分类号： B82Y20/00 , H01S5/0092 , H01S5/06256 , H01S5/162 , H01S2302/00
摘要： In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength λL. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength λQWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength λL. The QWI output window is characterized by a photoluminescent wavelength λPL. The manufacturing process comprises a λPL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength λL and the photoluminescent wavelength λPL of the QWI output window. Additional embodiments are disclosed and claimed.
摘要翻译：根据本公开的一个实施例，提供了制造包括增益部分，QWI输出窗口和QWI波导区域的半导体激光二极管的工艺。使用量子阱混合制造QWI波导区域，并在激光二极管的QWI输出窗口中定义QWI波导部分。 QWI输出窗口对于激光波长λL是透明的。 QWI输出窗口中的QWI波导部分的特征在于能量带隙大于增益部分的能带隙，使得QWI波导部分和QWI输出窗口中的带隙波长λQWI比激光波长λL短。 QWI输出窗口的特征在于光致发光波长λPL。该制造工艺包括λPL筛选方案，其基于激光波长λL和QWI输出窗口的光致发光波长λPL的比较来确定激光二极管的可靠性。公开并要求保护附加实施例。

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