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    • 4. 发明授权
    • Microfluid driving device
    • 微流体驱动装置
    • US06743636B2
    • 2004-06-01
    • US09863332
    • 2001-05-24
    • Chen-Kuei ChungWei-Jieh ChangChieh-Ling HsiaoKuo-Yao Weng
    • Chen-Kuei ChungWei-Jieh ChangChieh-Ling HsiaoKuo-Yao Weng
    • B01L302
    • F04F5/54B01F13/0059B01F15/0248B01F15/0284B01L3/50273B01L2400/0463B01L2400/0487F04B19/006Y10T436/15Y10T436/25Y10T436/2575
    • A microfluid driving device is provided. The microfluid driving device of this invention comprises microfluid driving platform prepared in a chip, which platform comprises at least two miniature Venturi pumps, at least one microchannel and optionally micro mixers or micro reactors in said microchannel; an external pneumatic flow supply and control module that provides selectively different air flows; and an interface device connecting said microfluid driving platform and said external pneumatic flow supply and control module. The air flows supplied by said the pneumatic flow supply and control module are supplied under selected flow rates and frequencies to said at least two Venturi pumps through said interface device, such that the microfluid inside said microchannel may be driven forward or backward or halt and the transportation, mixing and reaction of the microfluid may be accomplished.
    • 提供微流体驱动装置。 本发明的微流体驱动装置包括在芯片中制备的微流体驱动平台,该平台包括至少两个微型文丘里泵,所述微通道中的至少一个微通道和任选的微混合器或微反应器; 提供选择性地不同气流的外部气流供应和控制模块; 以及连接所述微流体驱动平台和所述外部气动流量供给和控制模块的接口装置。 由所述气流供应和控制模块供应的空气流通过所述接口装置以选定的流量和频率供应到所述至少两个文丘里泵,使得所述微通道内的微流体可以向前或向后或向后或停止, 可以实现微流体的运输,混合和反应。
    • 5. 发明授权
    • Anisotropic wet etching
    • 各向异性湿蚀刻
    • US06395645B1
    • 2002-05-28
    • US09137446
    • 1998-08-06
    • Chen-Kuei ChungChien-Chih LeeChing-Yi Wu
    • Chen-Kuei ChungChien-Chih LeeChing-Yi Wu
    • H01L21302
    • H01L21/30608H01L21/3083
    • A method for anisotropic wet etching is disclosed. In to this invention, a photo mask for the etching mask suited in the anisotropic wet etching is provided. In the photo mask, a pattern with a series of adjacent corners having a substantially rectangular, angle is formed. At the corner areas compensational patterns comprising masked grids are prepared. The pattern on the photo mask is then transferred to an etching mask of a semiconductor substrate such that a multi-level terrace structure with fine corners may be prepared during the etching of the substrate. The method of this invention is also applicable to semiconductor materials with the same diamond structure as that of silicon.
    • 公开了一种用于各向异性湿蚀刻的方法。 在本发明中,提供了适用于各向异性湿蚀刻中的蚀刻掩模用光掩模。 在光掩模中,形成具有大致矩形角的一系列相邻角的图案。 在拐角处,准备包括掩蔽网格的补偿图案。 然后将光掩模上的图案转移到半导体衬底的蚀刻掩模,使得可以在蚀刻基板期间制备具有细角的多层平台结构。 本发明的方法也适用于具有与硅相同的金刚石结构的半导体材料。