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    • 3. 发明申请
    • MICROELECTRONIC SUBSTRATE INSPECTION EQUIPMENT USING HELIUM ION MICROSCOPY
    • 微电子基板检测设备使用HELIUM离子显微镜
    • US20130175445A1
    • 2013-07-11
    • US13596644
    • 2012-08-28
    • Min-Kook KimWoo-Seok KoYu-Sin YangSang-Kil LeeChang-Hoon Choi
    • Min-Kook KimWoo-Seok KoYu-Sin YangSang-Kil LeeChang-Hoon Choi
    • H01J37/20
    • H01J37/265H01J37/08H01J2237/002H01J2237/006H01J2237/0807
    • Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen. Related methods are also disclosed.
    • 微电子基板检查设备包括含有氦气的气体容器,设置在气体容器中并将氦气转换为氦离子的氦离子发生器和设置在气体容器下方的晶片载台, 检查被放置。 该设备还包括二次电子检测器,其设置在晶片台上方并检测从基板产生的电子;压缩机,其接收来自连续氮供应装置的第一气态氮并将接收到的第一气态氮压缩成液态氮;液氮 连接到压缩机并储存液氮的杜瓦瓶,以及耦合到氦离子发生器的冷却装置。 冷却装置设置在气体容器上,并通过蒸发液氮来冷却氦离子发生器。 还公开了相关方法。
    • 6. 发明申请
    • Method of operating emitter for electron-beam projection lithography system
    • 操作电子束投影光刻系统的发射器的方法
    • US20070278425A1
    • 2007-12-06
    • US11882927
    • 2007-08-07
    • In-kyeong YooChang-wook MoonChang-hoon Choi
    • In-kyeong YooChang-wook MoonChang-hoon Choi
    • G21K5/04
    • H01J37/073H01J2237/31779
    • An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.
    • 用于电子束投影光刻系统的发射器包括:感光体基板,形成于感光体基板前表面的绝缘层,形成在绝缘层上的栅极电极层,以及形成在绝缘层的背面上的基极层 感光体基板并由透明导电材料形成。 在发射极的工作中,在基极和栅极电极层之间施加电压,光被投射到光电导体基底的一部分上,以将感光体基底的一部分转换为导体,使电子仅从部分 投射光的部分。 由于发射体可以部分地发射电子,所以可以实现对象电子抗蚀剂的部分校正,图案化或修复。
    • 7. 发明授权
    • Emitter for electron-beam projection lithography system, and method of manufacturing and operating the emitter
    • 用于电子束投影光刻系统的发射体,以及制造和操作发射极的方法
    • US07256406B2
    • 2007-08-14
    • US10962467
    • 2004-10-13
    • In-kyeong YooChang-wook MoonChang-hoon Choi
    • In-kyeong YooChang-wook MoonChang-hoon Choi
    • G21K5/10
    • H01J37/073H01J2237/31779
    • An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.
    • 用于电子束投影光刻系统的发射器包括:感光体基板,形成于感光体基板前表面的绝缘层,形成在绝缘层上的栅极电极层,以及形成在绝缘层的背面上的基极层 感光体基板并由透明导电材料形成。 在发射极的工作中,在基极和栅极电极层之间施加电压,光被投射到光电导体基底的一部分上,以将感光体基底的一部分转换为导体,使电子仅从部分 投射光的部分。 由于发射体可以部分地发射电子,所以可以实现对象电子抗蚀剂的部分校正,图案化或修复。
    • 8. 发明授权
    • Electromagnetic focusing method for electron-beam lithography system
    • 电子束光刻系统的电磁聚焦方法
    • US07189981B2
    • 2007-03-13
    • US11205148
    • 2005-08-17
    • Chang-wook MoonSidorkin VadimChang-hoon Choi
    • Chang-wook MoonSidorkin VadimChang-hoon Choi
    • H01J37/302H01J1/30
    • B82Y10/00B82Y40/00H01J37/3174H01J2237/31793
    • A method for projecting a predetermined pattern of an electron beam from an emitter to a wafer in a vacuum chamber of an electron-beam lithography system is provided. An initial condition for performing an electromagnetic focusing is first set and outspread phenomenon of the electron beam, which is caused by an initial emitting velocity difference and an initial emitting angle difference between electrons emitted from the emitter, is corrected. Then, a shift of the electron beam, which is caused when an electric field is not in parallel with a magnetic field, is corrected and a shift of the electron beam, which is caused by a gradient of the magnetic field, is corrected, after which an increase of a beam diameter of the electron beam, which is caused by Coulomb-interaction between the electrons emitted from the emitter, is corrected. Then, it is determined if a focusing error is within a range of an allowable error. When it is determined the focusing error is out of the range of the allowable error, the above operations are repeated.
    • 提供了一种在电子束光刻系统的真空室中将来自发射极的电子束的预定图案投影到晶片的方法。 首先设置用于执行电磁聚焦的初始条件,并校正由初始发射速度差和从发射器发射的电子之间的初始发射角差引起的电子束的扩展现象。 然后,校正当电场不与磁场平行时引起的电子束的偏移,并且由磁场的梯度引起的电子束的偏移被校正 校正了从发射极发射的电子之间的库仑相互作用引起的电子束的光束直径的增加。 然后,确定聚焦误差是否在允许误差的范围内。 当确定聚焦误差在允许误差的范围之外时,重复上述操作。
    • 9. 发明申请
    • Electromagnetic focusing method for electron-beam lithography system
    • 电子束光刻系统的电磁聚焦方法
    • US20060151720A1
    • 2006-07-13
    • US11205148
    • 2005-08-17
    • Chang-wook MoonSidorkin VadimChang-hoon Choi
    • Chang-wook MoonSidorkin VadimChang-hoon Choi
    • H01J37/302
    • B82Y10/00B82Y40/00H01J37/3174H01J2237/31793
    • A method for projecting a predetermined pattern of an electron beam from an emitter to a wafer in a vacuum chamber of an electron-beam lithography system is provided. An initial condition for performing an electromagnetic focusing is first set and outspread phenomenon of the electron beam, which is caused by an initial emitting velocity difference and an initial emitting angle difference between electrons emitted from the emitter, is corrected. Then, a shift of the electron beam, which is caused when an electric field is not in parallel with a magnetic field, is corrected and a shift of the electron beam, which is caused by a gradient of the magnetic field, is corrected, after which an increase of a beam diameter of the electron beam, which is caused by Coulomb-interaction between the electrons emitted from the emitter, is corrected. Then, it is determined if a focusing error is within a range of an allowable error. When it is determined the focusing error is out of the range of the allowable error, the above operations are repeated.
    • 提供了一种在电子束光刻系统的真空室中将来自发射极的电子束的预定图案投影到晶片的方法。 首先设置用于执行电磁聚焦的初始条件,并校正由初始发射速度差和从发射器发射的电子之间的初始发射角差引起的电子束的扩展现象。 然后,校正当电场不与磁场平行时引起的电子束的偏移,并且由磁场的梯度引起的电子束的偏移被校正 校正了从发射极发射的电子之间的库仑相互作用引起的电子束的光束直径的增加。 然后,确定聚焦误差是否在允许误差的范围内。 当确定聚焦误差在允许误差的范围之外时,重复上述操作。
    • 10. 发明授权
    • Process chamber including stage having improved base and substrate mounting member
    • 处理室包括具有改进的基底和基底安装构件的台阶
    • US06425994B1
    • 2002-07-30
    • US09433631
    • 1999-11-03
    • Chang-Hoon ChoiMan-Jong ParkIn-Won Lee
    • Chang-Hoon ChoiMan-Jong ParkIn-Won Lee
    • C23C1434
    • H01L21/67103C23C14/50C23C16/4583H01J2237/2001
    • A process chamber for processing a substrate by conducting plasma enhanced chemical vapor deposition or sputtering includes a stage. The stage has a main base member that is constructed to have projections and a recessed portion between the projections, and a substrate mounting member which is constructred to fit between the projections of the main base member and such that the a portion of the substrate mounting member is located within the recessed portion and a portion of the substrate mounting member protrudes from the main base member. The substrate mounting member is easily removed from the main base member while also being reliably fixed and positioned in the main base member by the projections. As a result of this construction, the substrate mounting member can be removed from the process chamber independently of the main base member and in a manner similar to how the substrate is removed after processing.
    • 用于通过等离子体增强化学气相沉积或溅射处理衬底的处理室包括阶段。 台架具有构造成在突起之间具有突出部和凹部的主基部构件,以及基板安装构件,其构造成配合在主基底构件的突起之间,使得基板安装构件的一部分 位于凹部内,并且基板安装部件的一部分从主基部件突出。 基板安装部件也可以从主基体部件被容易地移除,同时通过突起可靠地固定并定位在主基体部件中。 作为这种结构的结果,基板安装构件可以独立于主基底构件从处理室移除,并且以类似于处理之后的基板被去除的方式。