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1. 发明授权

US08729468B2 Microelectronic substrate inspection equipment using helium ion microscopy 有权
标题翻译：微电子基板检测设备采用氦离子显微镜
公开(公告)号：US08729468B2
公开(公告)日：2014-05-20
申请号：US13596644
申请日：2012-08-28
申请人： Min-Kook Kim , Woo-Seok Ko , Yu-Sin Yang , Sang-Kil Lee , Chang-Hoon Choi
发明人： Min-Kook Kim , Woo-Seok Ko , Yu-Sin Yang , Sang-Kil Lee , Chang-Hoon Choi
IPC分类号： H01J37/26
CPC分类号： H01J37/265 , H01J37/08 , H01J2237/002 , H01J2237/006 , H01J2237/0807
摘要： Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen. Related methods are also disclosed.
摘要翻译：微电子基板检查设备包括含有氦气的气体容器，设置在气体容器中并将氦气转换为氦离子的氦离子发生器和设置在气体容器下方的晶片载台，检查被放置。该设备还包括二次电子检测器，其设置在晶片台上方并检测从基板产生的电子;压缩机，其接收来自连续氮供应装置的第一气态氮并将接收到的第一气态氮压缩成液态氮;液氮连接到压缩机并储存液氮的杜瓦瓶，以及耦合到氦离子发生器的冷却装置。冷却装置设置在气体容器上，并通过蒸发液氮来冷却氦离子发生器。还公开了相关方法。

2. 发明申请

US20130175445A1 MICROELECTRONIC SUBSTRATE INSPECTION EQUIPMENT USING HELIUM ION MICROSCOPY 有权
标题翻译：微电子基板检测设备使用HELIUM离子显微镜
公开(公告)号：US20130175445A1
公开(公告)日：2013-07-11
申请号：US13596644
申请日：2012-08-28
申请人： Min-Kook Kim , Woo-Seok Ko , Yu-Sin Yang , Sang-Kil Lee , Chang-Hoon Choi
发明人： Min-Kook Kim , Woo-Seok Ko , Yu-Sin Yang , Sang-Kil Lee , Chang-Hoon Choi
IPC分类号： H01J37/20
CPC分类号： H01J37/265 , H01J37/08 , H01J2237/002 , H01J2237/006 , H01J2237/0807
摘要： Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen. Related methods are also disclosed.
摘要翻译：微电子基板检查设备包括含有氦气的气体容器，设置在气体容器中并将氦气转换为氦离子的氦离子发生器和设置在气体容器下方的晶片载台，检查被放置。该设备还包括二次电子检测器，其设置在晶片台上方并检测从基板产生的电子;压缩机，其接收来自连续氮供应装置的第一气态氮并将接收到的第一气态氮压缩成液态氮;液氮连接到压缩机并储存液氮的杜瓦瓶，以及耦合到氦离子发生器的冷却装置。冷却装置设置在气体容器上，并通过蒸发液氮来冷却氦离子发生器。还公开了相关方法。

3. 发明授权

US09678020B2 Apparatus and method for inspection of substrate defect 有权
公开(公告)号：US09678020B2
公开(公告)日：2017-06-13
申请号：US14795396
申请日：2015-07-09
申请人： Joon-Seo Song , Woo-seok Ko , Ji-Young Shin , Seong-Jin Yun , Yu-Sin Yang , Sang-Kil Lee , Chung-Sam Jun
发明人： Joon-Seo Song , Woo-seok Ko , Ji-Young Shin , Seong-Jin Yun , Yu-Sin Yang , Sang-Kil Lee , Chung-Sam Jun
IPC分类号： G01N21/95 , G01N21/88 , G01N21/956
CPC分类号： G01N21/9505 , G01N21/8806 , G01N21/9501 , G01N21/95692 , G01N2201/061
摘要： Example embodiments relate to an apparatus and method for inspecting a substrate defect. The substrate defect inspecting apparatus includes a substrate, a light source emitting an infrared beam to the substrate, a detector detecting the infrared beam reflected from the substrate, and a defect analyzer receiving first information and second information from the detector and analyzing defects existing in the substrate. According to at least one example embodiment, the second information is acquired during a later process than the first information.

4. 发明授权

US09455206B2 Overlay measuring method and system, and method of manufacturing semiconductor device using the same 有权
标题翻译：覆盖测量方法和系统，以及使用其制造半导体器件的方法
公开(公告)号：US09455206B2
公开(公告)日：2016-09-27
申请号：US14796478
申请日：2015-07-10
申请人： Seong-Jin Yun , Woo-Seok Ko , Yu-Sin Yang , Sang-Kil Lee , Chung-Sam Jun
发明人： Seong-Jin Yun , Woo-Seok Ko , Yu-Sin Yang , Sang-Kil Lee , Chung-Sam Jun
IPC分类号： H01L21/66 , H01J37/22
CPC分类号： H01L22/20 , H01J37/222 , H01J2237/221 , H01J2237/2617 , H01J2237/2817
摘要： An overlay measuring method includes irradiating an electron beam onto a sample, including a multi-layered structure of overlapped upper and lower patterns formed thereon, to obtain an actual image of the upper and lower patterns. A first image representing the upper pattern and a second image representing the lower pattern are obtained from the actual image. A reference position for the upper and lower patterns is determined from a design image of the upper and lower patterns. A position deviation of the upper pattern with respect to the reference position in the first image and a position deviation of the lower pattern with respect to the reference position in the second image are calculated to determine an overlay between the upper pattern and the lower pattern.
摘要翻译：覆盖测量方法包括将电子束照射到样品上，包括形成在其上的重叠的上下图案的多层结构，以获得上下图案的实际图像。从实际图像中获得代表上部图案的第一图像和表示较低图案的第二图像。根据上下图案的设计图像确定上下图案的参考位置。计算上部图形相对于第一图像中的基准位置的位置偏差和下部图形相对于第二图像中的基准位置的位置偏差，以确定上部图案和下部图案之间的叠加。

5. 发明授权

US08703405B2 Methods of generating three-dimensional process window qualification 有权
标题翻译：生成三维过程窗口资格的方法
公开(公告)号：US08703405B2
公开(公告)日：2014-04-22
申请号：US13462250
申请日：2012-05-02
申请人： Young-Hoon Sohn , Sang-Kil Lee , Yu-Sin Yang
发明人： Young-Hoon Sohn , Sang-Kil Lee , Yu-Sin Yang
IPC分类号： G03F7/00
CPC分类号： G03F7/70616 , G03F7/705
摘要： In a method of generating a three-dimensional process window qualification, a photoresist layer is coated on a substrate including an underlying structure. A plurality of circular-shaped regions of the substrate are distinguished into 1 to n regions to partition the substrate into a center portion and an edge portion, n being a natural number greater than 2. 1 to n exposing ranges are set, including a common exposing condition for the 1 to n regions. A photoresist pattern is fox led by exposing each shot portion in the 1 to n regions using a split exposing condition in the 1 to n exposing ranges. The photoresist pattern is detected, and a normal photoresist pattern with respect to each of the 1 to n regions is selected to generate the three-dimensional process window qualification.
摘要翻译：在产生三维工艺窗口鉴定的方法中，光致抗蚀剂层被涂覆在包括下面的结构的衬底上。衬底的多个圆形区域被区分为1到n个区域，以将衬底分成中心部分和边缘部分，n是大于2的自然数，1至n个曝光范围被设置，包括公共暴露1〜n个区域的状况。光致抗蚀剂图案是通过在1至n个曝光范围内使用分割曝光条件曝光1至n个区域中的每个拍摄部分来引导的狐狸。检测光致抗蚀剂图案，并且选择相对于1至n个区域中的每一个的常规光致抗蚀剂图案以产生三维工艺窗口鉴定。

6. 发明授权

US08902412B2 Defect inspection apparatus and defect inspection method using the same 有权
标题翻译：缺陷检查装置和缺陷检查方法使用
公开(公告)号：US08902412B2
公开(公告)日：2014-12-02
申请号：US13472145
申请日：2012-05-15
申请人： Young-Hoon Sohn , Yu-Sin Yang , Sang-Kil Lee
发明人： Young-Hoon Sohn , Yu-Sin Yang , Sang-Kil Lee
IPC分类号： G01N21/00 , G01N21/55 , G01N21/95
CPC分类号： G01N21/55 , G01N21/9501
摘要： A defect inspection apparatus comprises a table on which a substrate is placed, a first detection unit which is disposed above the table to detect an optical signal from the substrate, a second detection unit which is disposed above the table to detect an electrical signal from the substrate, and a signal processing unit which is connected to the first detection unit and the second detection unit to detect a chemical defect using the optical signal and the electrical signal.
摘要翻译：缺陷检查装置包括：放置基板的工作台，设置在工作台上方以检测来自衬底的光信号的第一检测单元，设置在工作台上方的第二检测单元，用于检测来自基板的电信号; 基板和连接到第一检测单元和第二检测单元的信号处理单元，以使用光信号和电信号来检测化学缺陷。

7. 发明授权

US06870948B2 Method and apparatus for numerically analyzing grain growth on semiconductor wafer using SEM image 失效
标题翻译：使用SEM图像对半导体晶片上的晶粒生长进行数值分析的方法和装置
公开(公告)号：US06870948B2
公开(公告)日：2005-03-22
申请号：US09977238
申请日：2001-10-16
申请人： Chung-sam Jun , Sang-Mun Chon , Sang-Bong Choi , Kye-Weon Kim , Sang-Hoon Lee , Yu-Sin Yang , Sang-Min Kim , Sang-Kil Lee
发明人： Chung-sam Jun , Sang-Mun Chon , Sang-Bong Choi , Kye-Weon Kim , Sang-Hoon Lee , Yu-Sin Yang , Sang-Min Kim , Sang-Kil Lee
IPC分类号： G01B15/00 , G01B15/08 , G01N15/00 , G01N15/14 , G01N23/20 , G01N23/225 , G06T1/00 , G06T7/00 , H01L21/66 , G06K9/00 , H01L21/8242
CPC分类号： G06T7/0004 , G01N15/1475 , G01N2015/0092 , G06T2207/30148 , H01J2237/2815
摘要： A method and apparatus for numerically analyzing a growth degree of grains grown on a surface of a semiconductor wafer, in which the growth degree of grains is automatically calculated and numerated through a computer by using an image file of the surface of the semiconductor wafer scanned by an SEM. A predetermined portion of a surface of the wafer is scanned using the SEM, and the scanned SEM image is simultaneously stored into a database. An automatic numerical program applies meshes to an analysis screen frame and selects an analysis area on a measured image. Thereafter, a smoothing process for reducing an influence of noise is performed on respective pixels designated by the meshes using an average value of image data of adjacent pixels. A standardization process is then performed, based on respective images in order to remove a brightness difference between the measured images. After comparing standardized image data values of the respective pixels with a predetermined threshold value, the number of pixels whose standardized image data value is greater than the threshold value is counted. The growth degree of grains on the surface of the wafer is calculated by numerating a ratio of the counted number with respect to a total number of the pixels contained within the analysis target image.
摘要翻译：一种用于数值分析生长在半导体晶片的表面上的晶粒的生长度的方法和装置，其中通过使用由半导体晶片的表面扫描的半导体晶片的表面的图像文件自动计算和计算晶粒的生长度 SEM。使用SEM扫描晶片的表面的预定部分，并将扫描的SEM图像同时存储到数据库中。自动数值程序将网格应用于分析屏幕框架，并在测量图像上选择分析区域。此后，使用相邻像素的图像数据的平均值对由网格指定的各个像素执行用于减少噪声的影响的平滑处理。然后基于相应的图像执行标准化处理，以便去除所测量的图像之间的亮度差异。在将各像素的标准化图像数据值与预定阈值进行比较之后，对标准化图像数据值大于阈值的像素数进行计数。通过对计数的数量相对于分析对象图像中包含的像素的总数的比率进行计算来计算晶片表面上的晶粒的生长度。

8. 发明申请

US20130234021A1 METHOD AND APPARATUS TO MEASURE STEP HEIGHT OF DEVICE USING SCANNING ELECTRON MICROSCOPE 有权
标题翻译：使用扫描电子显微镜测量器件的高度的方法和装置
公开(公告)号：US20130234021A1
公开(公告)日：2013-09-12
申请号：US13680347
申请日：2012-11-19
申请人： Young-Hoon Sohn , Jin-Woo Lee , Yong-Deok Jeong , Yu-Sin Yang , Sang-Kil Lee , Chung-Sam Jun
发明人： Young-Hoon Sohn , Jin-Woo Lee , Yong-Deok Jeong , Yu-Sin Yang , Sang-Kil Lee , Chung-Sam Jun
IPC分类号： G01B15/00
CPC分类号： G01B15/00 , G01N23/225 , G06T7/60 , G06T2207/10061 , H01J37/222 , H01J37/26 , H01J37/28 , H01J2237/24578 , H01J2237/2815 , H01J2237/2817
摘要： A method of measuring a step height of a device using a scanning electron microscope (SEM), the method may include providing a device which comprises a first region and a second region, wherein a step is formed between the first region and the second region, obtaining a SEM image of the device by photographing the device using a SEM, wherein the SEM image comprises a first SEM image region for the first region and a second SEM image region for the second region, converting the SEM image into a gray-level histogram and calculating a first peak value related to the first SEM image region and a second peak value related to the second SEM image region, wherein the first peak value and the second peak value are repeatedly calculated by varying a focal length of the SEM, and determining a height of the step by analyzing a trend of changes in the first peak value according to changes in the focal length and a trend of changes in the second peak value according to the changes in the focal length.
摘要翻译：使用扫描电子显微镜（SEM）测量器件的台阶高度的方法可以包括提供包括第一区域和第二区域的器件，其中在第一区域和第二区域之间形成台阶，通过使用SEM拍摄该装置来获得该装置的SEM图像，其中，SEM图像包括用于第一区域的第一SEM图像区域和用于第二区域的第二SEM图像区域，将SEM图像转换为灰度级直方图以及计算与第一SEM图像区域相关的第一峰值和与第二SEM图像区域相关的第二峰值，其中通过改变SEM的焦距来重复计算第一峰值和第二峰值，并且确定通过根据焦距的变化分析第一峰值的变化趋势和根据焦距变化的第二峰值变化的趋势的步骤的高度 th。

9. 发明申请

US20120315583A1 METHODS OF GENERATING THREE-DIMENSIONAL PROCESS WINDOW QUALIFICATION 有权
标题翻译：生成三维过程窗口资格的方法
公开(公告)号：US20120315583A1
公开(公告)日：2012-12-13
申请号：US13462250
申请日：2012-05-02
申请人： Young-Hoon Sohn , Sang-Kil Lee , Yu-Sin Yang
发明人： Young-Hoon Sohn , Sang-Kil Lee , Yu-Sin Yang
IPC分类号： G03F7/20
CPC分类号： G03F7/70616 , G03F7/705
摘要： In a method of generating a three-dimensional process window qualification, a photoresist layer is coated on a substrate including an underlying structure. A plurality of circular-shaped regions of the substrate are distinguished into 1 to n regions to partition the substrate into a center portion and an edge portion, n being a natural number greater than 2. 1 to n exposing ranges are set, including a common exposing condition for the 1 to n regions. A photoresist pattern is fox led by exposing each shot portion in the 1 to n regions using a split exposing condition in the 1 to n exposing ranges. The photoresist pattern is detected, and a normal photoresist pattern with respect to each of the 1 to n regions is selected to generate the three-dimensional process window qualification.
摘要翻译：在产生三维工艺窗口鉴定的方法中，光致抗蚀剂层被涂覆在包括下面的结构的衬底上。衬底的多个圆形区域被区分为1到n个区域，以将衬底分成中心部分和边缘部分，n是大于2的自然数，1至n个曝光范围被设置，包括公共暴露1〜n个区域的状况。光致抗蚀剂图案是通过在1至n个曝光范围内使用分割曝光条件曝光1至n个区域中的每个拍摄部分来引导的狐狸。检测光致抗蚀剂图案，并且选择相对于1至n个区域中的每一个的常规光致抗蚀剂图案以产生三维工艺窗口鉴定。

10. 发明授权

US07923684B2 Methods, systems and computer program products for measuring critical dimensions of fine patterns using scanning electron microscope pictures and secondary electron signal profiles 有权
标题翻译：使用扫描电子显微镜图像和二次电子信号轮廓测量精细图案的关键尺寸的方法，系统和计算机程序产品
公开(公告)号：US07923684B2
公开(公告)日：2011-04-12
申请号：US12274471
申请日：2008-11-20
申请人： Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
发明人： Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , G06K9/0014 , H01J2237/2814 , H01J2237/2817
摘要： A pattern is inspected by acquiring a scanning electron microscope picture of an inspection pattern, and acquiring a scanning electron microscope secondary electron signal profile of the inspection pattern. A determination is made as to whether the inspection pattern is defective by comparing the scanning electron microscope picture of the inspection pattern to a scanning electron microscope picture of a sample pattern, and by comparing the scanning electron microscope secondary electron signal profile of the inspection pattern to a scanning electron microscope secondary electron signal profile of a sample pattern.
摘要翻译：通过获取检查图案的扫描电子显微镜图像并获取检查图案的扫描电子显微镜二次电子信号轮廓来检查图案。通过将检查图案的扫描电子显微镜照片与样品图案的扫描电子显微镜照片进行比较，并将检查图案的扫描电子显微镜二次电子信号轮廓与样品图案的扫描电子显微镜二次电子信号轮廓。

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