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    • 2. 发明申请
    • Method of operating emitter for electron-beam projection lithography system
    • 操作电子束投影光刻系统的发射器的方法
    • US20070278425A1
    • 2007-12-06
    • US11882927
    • 2007-08-07
    • In-kyeong YooChang-wook MoonChang-hoon Choi
    • In-kyeong YooChang-wook MoonChang-hoon Choi
    • G21K5/04
    • H01J37/073H01J2237/31779
    • An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.
    • 用于电子束投影光刻系统的发射器包括:感光体基板,形成于感光体基板前表面的绝缘层,形成在绝缘层上的栅极电极层,以及形成在绝缘层的背面上的基极层 感光体基板并由透明导电材料形成。 在发射极的工作中,在基极和栅极电极层之间施加电压,光被投射到光电导体基底的一部分上,以将感光体基底的一部分转换为导体,使电子仅从部分 投射光的部分。 由于发射体可以部分地发射电子,所以可以实现对象电子抗蚀剂的部分校正,图案化或修复。
    • 3. 发明授权
    • Emitter for electron-beam projection lithography system, and method of manufacturing and operating the emitter
    • 用于电子束投影光刻系统的发射体,以及制造和操作发射极的方法
    • US07256406B2
    • 2007-08-14
    • US10962467
    • 2004-10-13
    • In-kyeong YooChang-wook MoonChang-hoon Choi
    • In-kyeong YooChang-wook MoonChang-hoon Choi
    • G21K5/10
    • H01J37/073H01J2237/31779
    • An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.
    • 用于电子束投影光刻系统的发射器包括:感光体基板,形成于感光体基板前表面的绝缘层,形成在绝缘层上的栅极电极层,以及形成在绝缘层的背面上的基极层 感光体基板并由透明导电材料形成。 在发射极的工作中,在基极和栅极电极层之间施加电压,光被投射到光电导体基底的一部分上,以将感光体基底的一部分转换为导体,使电子仅从部分 投射光的部分。 由于发射体可以部分地发射电子,所以可以实现对象电子抗蚀剂的部分校正,图案化或修复。
    • 4. 发明授权
    • Electromagnetic focusing method for electron-beam lithography system
    • 电子束光刻系统的电磁聚焦方法
    • US07189981B2
    • 2007-03-13
    • US11205148
    • 2005-08-17
    • Chang-wook MoonSidorkin VadimChang-hoon Choi
    • Chang-wook MoonSidorkin VadimChang-hoon Choi
    • H01J37/302H01J1/30
    • B82Y10/00B82Y40/00H01J37/3174H01J2237/31793
    • A method for projecting a predetermined pattern of an electron beam from an emitter to a wafer in a vacuum chamber of an electron-beam lithography system is provided. An initial condition for performing an electromagnetic focusing is first set and outspread phenomenon of the electron beam, which is caused by an initial emitting velocity difference and an initial emitting angle difference between electrons emitted from the emitter, is corrected. Then, a shift of the electron beam, which is caused when an electric field is not in parallel with a magnetic field, is corrected and a shift of the electron beam, which is caused by a gradient of the magnetic field, is corrected, after which an increase of a beam diameter of the electron beam, which is caused by Coulomb-interaction between the electrons emitted from the emitter, is corrected. Then, it is determined if a focusing error is within a range of an allowable error. When it is determined the focusing error is out of the range of the allowable error, the above operations are repeated.
    • 提供了一种在电子束光刻系统的真空室中将来自发射极的电子束的预定图案投影到晶片的方法。 首先设置用于执行电磁聚焦的初始条件,并校正由初始发射速度差和从发射器发射的电子之间的初始发射角差引起的电子束的扩展现象。 然后,校正当电场不与磁场平行时引起的电子束的偏移,并且由磁场的梯度引起的电子束的偏移被校正 校正了从发射极发射的电子之间的库仑相互作用引起的电子束的光束直径的增加。 然后,确定聚焦误差是否在允许误差的范围内。 当确定聚焦误差在允许误差的范围之外时,重复上述操作。
    • 5. 发明申请
    • Electromagnetic focusing method for electron-beam lithography system
    • 电子束光刻系统的电磁聚焦方法
    • US20060151720A1
    • 2006-07-13
    • US11205148
    • 2005-08-17
    • Chang-wook MoonSidorkin VadimChang-hoon Choi
    • Chang-wook MoonSidorkin VadimChang-hoon Choi
    • H01J37/302
    • B82Y10/00B82Y40/00H01J37/3174H01J2237/31793
    • A method for projecting a predetermined pattern of an electron beam from an emitter to a wafer in a vacuum chamber of an electron-beam lithography system is provided. An initial condition for performing an electromagnetic focusing is first set and outspread phenomenon of the electron beam, which is caused by an initial emitting velocity difference and an initial emitting angle difference between electrons emitted from the emitter, is corrected. Then, a shift of the electron beam, which is caused when an electric field is not in parallel with a magnetic field, is corrected and a shift of the electron beam, which is caused by a gradient of the magnetic field, is corrected, after which an increase of a beam diameter of the electron beam, which is caused by Coulomb-interaction between the electrons emitted from the emitter, is corrected. Then, it is determined if a focusing error is within a range of an allowable error. When it is determined the focusing error is out of the range of the allowable error, the above operations are repeated.
    • 提供了一种在电子束光刻系统的真空室中将来自发射极的电子束的预定图案投影到晶片的方法。 首先设置用于执行电磁聚焦的初始条件,并校正由初始发射速度差和从发射器发射的电子之间的初始发射角差引起的电子束的扩展现象。 然后,校正当电场不与磁场平行时引起的电子束的偏移,并且由磁场的梯度引起的电子束的偏移被校正 校正了从发射极发射的电子之间的库仑相互作用引起的电子束的光束直径的增加。 然后,确定聚焦误差是否在允许误差的范围内。 当确定聚焦误差在允许误差的范围之外时,重复上述操作。