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    • 3. 发明申请
    • CONFORMAL FILMS INCLUDING METAL GALLIUM CARBIDE AND METAL INDIUM CARBIDE FOR DEVICE APPLICATIONS AND THEIR FABRICATION
    • 包含金属镓碳化物和金属铟碳化物的器件适用于器件应用及其制造
    • WO2018009158A1
    • 2018-01-11
    • PCT/US2016/040894
    • 2016-07-02
    • INTEL CORPORATIONCLENDENNING, Scott B.KIM, Kyoung H.ROMERO, Patricio E.
    • CLENDENNING, Scott B.KIM, Kyoung H.ROMERO, Patricio E.
    • H01L21/28H01L21/02H01L29/78
    • An apparatus including an integrated circuit device structure including a metal layer including a composition of General Formula I: M-Al m -X 1 n -X 2 p -C q -O r , wherein M includes a metal selected from one or more of titanium, zirconium, hafnium, tantalum, niobium and vanadium, wherein C includes carbon, wherein X 1 includes gallium, wherein X 2 includes indium, wherein m, n, p, q and r represent an atomic percent of an element in the metal layer that can be 0 percent, with the proviso that n and p cannot each be 0 percent. A method including introducing a first precursor including a metal halide into a chamber including an integrated circuit structure, introducing a second precursor of at least one of an organogallium compound and organoindium compound into the chamber; and depositing a metal including the metal cation of the halide and at least one of gallium and indium.
    • 一种包括集成电路器件结构的设备,所述集成电路器件结构包括包含通式I的组成的金属层:M-Al m -X 1 1 其中M包括一个或多个取代基,其中M包括一个或一个以上的取代基, 选自钛,锆,铪,钽,铌和钒中的一种或多种的金属,其中C包括碳,其中X 1包括镓,其中X 2包括铟, 其中m,n,p,q和r表示金属层中元素的原子百分比,其可以为0%,条件是n和p不能各为0%。 包括将包含金属卤化物的第一前体引入包括集成电路结构的腔室中,将有机镓化合物和有机铟化合物中的至少一种的第二前体引入腔室中; 并沉积包括卤化物的金属阳离子和镓和铟中的至少一种的金属。