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1. 发明申请

WO2017111861A1 INTEGRATED PASSIVE DEVICES ON CHIP 审中-公开
标题翻译：芯片上的集成被动器件
公开(公告)号：WO2017111861A1
公开(公告)日：2017-06-29
申请号：PCT/US2015/000458
申请日：2015-12-26
申请人： INTEL CORPORATION , GARDNER, Donald, S. , BURTON, Edward, A. , SCHROM, Gerhard , MOSLEY, Larry, E
发明人： GARDNER, Donald, S. , BURTON, Edward, A. , SCHROM, Gerhard , MOSLEY, Larry, E
IPC分类号： H01L25/07 , H01L23/48
CPC分类号： H01L25/07 , H01L28/87 , H01L28/91 , H01L2224/16225
摘要： Embodiments are generally directed to integrated passive devices on chip. An embodiment of a device includes a semiconductor die; a semiconductor die package, a first side of the package being coupled with the semiconductor die; and one or more separate dies to provide passive components for operation of the semiconductor die, wherein the passive components for operation of the semiconductor die includes inductors.
摘要翻译：实施例通常针对片上集成无源器件。器件的实施例包括半导体管芯; 半导体管芯封装，所述封装的第一侧与所述半导体管芯耦合; 以及一个或多个分开的管芯以提供用于半导体管芯的操作的无源部件，其中用于半导体管芯的操作的无源部件包括电感器。

2. 发明申请

WO2013147891A1 CLIENT SECURITY SCORING 审中-公开
标题翻译：客户安全评分
公开(公告)号：WO2013147891A1
公开(公告)日：2013-10-03
申请号：PCT/US2012/031694
申请日：2012-03-30
申请人： INTEL CORPORATION , DESHPANDE, Nikhil M. , ZMUDZINSKI, Krystof C. , GARDNER, Donald S.
发明人： DESHPANDE, Nikhil M. , ZMUDZINSKI, Krystof C. , GARDNER, Donald S.
IPC分类号： G06Q20/40 , G06Q20/32 , G06F21/00
CPC分类号： G06F21/577 , G06Q20/3224 , G06Q20/4016
摘要： Methods, apparatuses and techniques for security evaluation. A security profile of a client device is evaluated. The security profile is based on hardware and software security mechanism utilization of the client device. A security score is generated based on the security profile. The security score is provided to a service provider.
摘要翻译：安全评估的方法，设备和技术。评估客户端设备的安全配置文件。安全配置文件基于客户端设备的硬件和软件安全机制利用。基于安全性配置文件生成安全分数。安全分数提供给服务提供商。

3. 发明申请

WO2013048465A1 METHOD OF INCREASING AN ENERGY DENSITY AND AN ACHIEVABLE POWER OUTPUT OF AN ENERGY STORAGE DEVICE 审中-公开
标题翻译：提高能源密度的方法和能源储存装置的可实现的功率输出
公开(公告)号：WO2013048465A1
公开(公告)日：2013-04-04
申请号：PCT/US2011/054372
申请日：2011-09-30
申请人： INTEL CORPORATION , GARDNER, Donald, S. , CHEN, Zhaohui , JIN, Wei C. , CLENDENNING, Scott B. , HANNAH, Eric C. , ALDRIDGE, Tomm V. , GUSTAFSON, John L.
发明人： GARDNER, Donald, S. , CHEN, Zhaohui , JIN, Wei C. , CLENDENNING, Scott B. , HANNAH, Eric C. , ALDRIDGE, Tomm V. , GUSTAFSON, John L.
IPC分类号： H01G9/038 , H01G9/022
CPC分类号： H01G9/0029 , H01G11/14 , H01G11/26 , H01G11/30 , H01G11/58 , H01G11/86 , Y02E60/13
摘要： Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.
摘要翻译：提高能量存储装置的能量密度的方法包括通过使用原子层沉积工艺将材料沉积到能量存储装置的多孔结构中来增加能量存储装置的电容，通过执行设计以增加到其中电解质渗透到多孔结构的通道内，或者通过将介电材料放置在多孔结构中。另一种方法包括退火能量存储装置，以使导电物质扩散到结构的表面并在其上形成导电层。提高能量密度的另一种方法包括提高击穿电压，另一种方法包括形成假电容器。增加能量存储装置的可实现的功率输出的方法包括将导电材料沉积到多孔结构中。

4. 发明申请

WO2012121777A3 ERROR MANAGEMENT ACROSS HARDWARE AND SOFTWARE LAYERS 审中-公开
标题翻译：硬件和软件层之间的错误管理
公开(公告)号：WO2012121777A3
公开(公告)日：2012-11-08
申请号：PCT/US2011066524
申请日：2011-12-21
申请人： INTEL CORP , CARTER NICHOLAS P , HANNAH ERIC C , NAEIMI HELIA , HAYCOCK MATTHEW B , GARDNER DONALD S , BORKAR SHEKHAR Y
发明人： CARTER NICHOLAS P , HANNAH ERIC C , NAEIMI HELIA , HAYCOCK MATTHEW B , GARDNER DONALD S , BORKAR SHEKHAR Y
IPC分类号： G06F11/28 , G06F11/07 , G06F11/22
CPC分类号： G06F11/0781 , G06F11/0772 , G06F11/0793 , G06F11/1425 , G06F11/1428
摘要： Generally, this disclosure provides error management across hardware and software layers to enable hardware and software to deliver reliable operation in the face of errors and hardware variation due to aging, manufacturing tolerances, etc. In one embodiment, an error management module is provided that gathers information from the hardware and software layers, and detects and diagnoses errors. A hardware or software recovery technique may be selected to provide efficient operation, and, in some embodiments, the hardware device may be reconfigured to prevent future errors and to permit the hardware device to operate despite a permanent error.
摘要翻译：通常，本公开提供跨越硬件层和软件层的错误管理，以使硬件和软件能够在由于老化，制造容差等而导致的错误和硬件变化面前提供可靠的操作。在一个实施例中，提供了错误管理模块，来自硬件和软件层的信息，并检测和诊断错误。可以选择硬件或软件恢复技术来提供有效的操作，并且在一些实施例中，硬件设备可以被重新配置以防止将来的错误并且允许硬件设备在尽管存在永久错误的情况下进行操作。

5. 发明申请

WO2012121777A2 ERROR MANAGEMENT ACROSS HARDWARE AND SOFTWARE LAYERS 审中-公开
标题翻译：硬件和软件层之间的错误管理
公开(公告)号：WO2012121777A2
公开(公告)日：2012-09-13
申请号：PCT/US2011/066524
申请日：2011-12-21
申请人： INTEL CORPORATION , CARTER, Nicholas P. , HANNAH, Eric C. , NAEIMI, Helia , HAYCOCK, Matthew B. , GARDNER, Donald S. , BORKAR, Shekhar Y.
发明人： CARTER, Nicholas P. , HANNAH, Eric C. , NAEIMI, Helia , HAYCOCK, Matthew B. , GARDNER, Donald S. , BORKAR, Shekhar Y.
IPC分类号： G06F11/28 , G06F11/22 , G06F11/07
CPC分类号： G06F11/0781 , G06F11/0772 , G06F11/0793 , G06F11/1425 , G06F11/1428
摘要： Generally, this disclosure provides error management across hardware and software layers to enable hardware and software to deliver reliable operation in the face of errors and hardware variation due to aging, manufacturing tolerances, etc. In one embodiment, an error management module is provided that gathers information from the hardware and software layers, and detects and diagnoses errors. A hardware or software recovery technique may be selected to provide efficient operation, and, in some embodiments, the hardware device may be reconfigured to prevent future errors and to permit the hardware device to operate despite a permanent error.
摘要翻译：通常，本公开提供跨越硬件和软件层的错误管理，以使硬件和软件能够在由于老化，制造公差等导致的错误和硬件变化的情况下提供可靠的操作。在一个实施例中，提供了一种错误管理模块，来自硬件和软件层的信息，并检测和诊断错误。可以选择硬件或软件恢复技术来提供有效的操作，并且在一些实施例中，硬件设备可以被重新配置以防止将来的错误，并允许硬件设备在永久性错误的情况下操作。

6. 发明申请

WO2008003008A3 INTEGRATED INDUCTOR 审中-公开
公开(公告)号：WO2008003008A3
公开(公告)日：2008-01-03
申请号：PCT/US2007/072293
申请日：2007-06-27
申请人： INTEL CORPORATION , HAZUCHA, Peter , BURTON, Edward , NGUYEN, Trang T. , SCHROM, Gerhard , PAILLET, Fabrice , RADHAKRISHNAN, Kaladhar , GARDNER, Donald S. , MOON, Sung T. , KARNIK, Tanay
发明人： HAZUCHA, Peter , BURTON, Edward , NGUYEN, Trang T. , SCHROM, Gerhard , PAILLET, Fabrice , RADHAKRISHNAN, Kaladhar , GARDNER, Donald S. , MOON, Sung T. , KARNIK, Tanay
IPC分类号： H01F17/02 , H01F41/04
摘要： An inductor and multiple inductors embedded in a substrate (e.g., IC package substrate, board substrate, and/or other substrate) is provided herein.

7. 发明申请

WO2014131059A8 ENERGY CONVERSION AND STORAGE DEVICE AND MOBILE ELECTRONIC DEVICE CONTAINING SAME 审中-公开
标题翻译：能量转换和存储设备及包含其的移动电子设备
公开(公告)号：WO2014131059A8
公开(公告)日：2015-10-01
申请号：PCT/US2014018913
申请日：2014-02-27
申请人： INTEL CORP , GARDNER DONALD S , PINT CARY L
发明人： GARDNER DONALD S , PINT CARY L
IPC分类号： H01G9/042 , H01G9/00
CPC分类号： H01G11/26 , H01G9/20 , H01L31/053 , H02S40/38 , Y02E10/50 , Y02E60/13
摘要： An energy conversion and storage device includes an energy storage component (530, 601) including a first electrode (611) having a first plurality of channels (612) formed in a first region (615) of a first material (617), a second electrode (621) adjacent to but electrically isolated from the first electrode and having a second plurality of channels (622) formed in a first region (625) of a second material (627), and an electrolyte (650) within the first and second pluralities of channels. The first electrode forms a first interface (619) with the electrolyte and the second electrode forms a second interface (629) with the electrolyte. The energy conversion and storage device further includes a photovoltaic component (520, 602) formed in a second region of the first material.
摘要翻译：能量转换和存储装置包括能量存储部件（530,601），其包括第一电极（611），该第一电极具有形成在第一材料（617）的第一区域（615）中的第一多个通道（612），第二电极电极（621），其与第一电极相邻但电隔离并且具有形成在第二材料（627）的第一区域（625）中的第二多个通道（622），以及在第一和第二电极多个频道第一电极与电解质形成第一界面（619），第二电极与电解质形成第二界面（629）。能量转换和存储装置还包括形成在第一材料的第二区域中的光伏组件（520,602）。

8. 发明申请

WO2011123135A1 CHARGE STORAGE DEVICE, METHOD OF MAKING SAME, METHOD OF MAKING AN ELECTRICALLY CONDUCTIVE STRUCTURE FOR SAME, MOBILE ELECTRONIC DEVICE USING SAME, AND MICROELECTRONIC DEVICE CONTAINING SAME 审中-公开
标题翻译：充电储存装置，其制造方法，制造其电气导电结构的方法，使用它的移动电子装置以及包含其的微电子装置
公开(公告)号：WO2011123135A1
公开(公告)日：2011-10-06
申请号：PCT/US2010/029821
申请日：2010-04-02
申请人： INTEL CORPORATION , GARDNER, Donald, S. , HANNAH, Eric, C. , CHEN, Rong , GUSTAFSON, John, L.
发明人： GARDNER, Donald, S. , HANNAH, Eric, C. , CHEN, Rong , GUSTAFSON, John, L.
IPC分类号： H01G4/005
CPC分类号： H01G11/86 , H01G2/02 , H01G9/048 , H01G11/24 , H01G11/26 , H01G11/36 , H01G11/52 , H01G11/54 , H01L28/82 , Y02E60/13
摘要： In one embodiment a charge storage device includes first (110) and second (120) electrically conductive structures separated from each other by a separator (130). At least one of the first and second electrically conductive structures includes a porous structure containing multiple channels (111, 121). Each one of the channels has an opening (112, 122) to a surface (115, 125) of the porous structure. In another embodiment the charge storage device includes multiple nanostructures (610) and an electrolyte (650) in physical contact with at least some of the nanostructures. A material (615) having a dielectric constant of at least 3.9 may be located between the electrolyte and the nanostructures.
摘要翻译：在一个实施例中，电荷存储装置包括通过分离器（130）彼此分离的第一（110）和第二（120）导电结构。第一和第二导电结构中的至少一个包括包含多个通道（111,121）的多孔结构。每个通道具有到多孔结构的表面（115,125）的开口（112,122）。在另一个实施方案中，电荷存储装置包括与至少一些纳米结构物理接触的多个纳米结构（610）和电解质（650）。具有至少3.9的介电常数的材料（615）可以位于电解质和纳米结构之间。

9. 发明申请

WO2002065492A2 INTEGRATED TRANSFORMER 审中-公开
标题翻译：集成变压器
公开(公告)号：WO2002065492A2
公开(公告)日：2002-08-22
申请号：PCT/US2002/001742
申请日：2002-01-22
申请人： INTEL CORPORATION , GARDNER, Donald, S.
发明人： GARDNER, Donald, S.
IPC分类号： H01F27/28
CPC分类号： H01L28/10 , H01F17/0006 , H01F41/042 , H01F41/046 , H01F2017/0046 , H01F2017/008 , H01L23/522 , H01L23/5227 , H01L23/552 , H01L23/645 , H01L27/08 , H01L2924/0002 , H01L2924/00
摘要： A transformer comprises a substrate comprising a semiconductor material, a first conductor over the substrate, a second conductor over the substrate, and a magnetic layer over the substrate. The first conductor defines a generally spiral-shaped signal path having at least one turn. The second conductor defines a generally spiral-shaped signal path having at least one turn.
摘要翻译：变压器包括衬底，衬底包括半导体材料，衬底上的第一导体，衬底上的第二导体以及衬底上的磁性层。第一导体限定具有至少一匝的大致螺旋形状的信号路径。第二导体限定具有至少一圈的大致螺旋形信号路径。

10. 发明申请

WO2014210015A1 ROBUST AMORPHOUS SILICON ANODES, RECHARGABLE BATTERIES HAVING AMORPHOUS SILICON ANODES, AND ASSOCIATED METHODS 审中-公开
标题翻译：稳定的无定形硅阳极，具有非晶硅阳极的可充电电池及相关方法
公开(公告)号：WO2014210015A1
公开(公告)日：2014-12-31
申请号：PCT/US2014/043885
申请日：2014-06-24
申请人： INTEL CORPORATION , CHEN, Zhaohui , GARDNER, Donald S. , MOON, Bum Ki , LIU, Yang
发明人： CHEN, Zhaohui , GARDNER, Donald S. , MOON, Bum Ki , LIU, Yang
IPC分类号： H01M4/134 , H01M4/38 , H01M10/052
CPC分类号： H01M4/386 , H01M4/0402 , H01M4/134 , H01M4/1395 , H01M4/624 , H01M4/66 , H01M10/052 , H01M2004/027
摘要： Amorphous silicon anode electrodes and devices for a rechargeable batteries having enhanced structural stabilities are provided. An amorphous silicon anode can include an electrically conductive substrate and an electrode layer deposited onto the substrate, where the electrode layer is comprised of one or more amorphous silicon structures, and the amorphous silicon structures have at least one dimension that is less than or equal to about 500 nm.
摘要翻译：提供非晶硅阳极电极和用于具有增强的结构稳定性的可再充电电池的装置。非晶硅阳极可以包括导电衬底和沉积在衬底上的电极层，其中电极层由一个或多个非晶硅结构构成，并且非晶硅结构具有至少一个尺寸小于或等于约500nm。

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