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1. 发明专利

RO79895A2 未知
公开(公告)号：RO79895A2
公开(公告)日：1982-10-11
申请号：RO10447381
申请日：1981-06-02
申请人： CRACEA EMILIAN , BOTEZ DAN , POPA VASILE , BRAILE GEORGESCU MARIA
发明人： CRACEA EMILIAN , BOTEZ DAN , POPA VASILE , BRAILE-GEORGESCU MARIA
IPC分类号： A61K39/40

2. 发明申请

WO2007112164A3 HIGH EFFICIENCY INTERSUBBAND SEMICONDUCTOR LASERS 审中-公开
标题翻译：高效率的半导体激光器
公开(公告)号：WO2007112164A3
公开(公告)日：2009-02-05
申请号：PCT/US2007062569
申请日：2007-02-22
申请人： WISCONSIN ALUMNI RES FOUND , BOTEZ DAN , XU DAPENG P , MAWST LUKE J
发明人： BOTEZ DAN , XU DAPENG P , MAWST LUKE J
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3407 , Y10S977/951
摘要： An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
摘要翻译：子带间量子级联激光器结构包括多个耦合激光器级，其中每个级具有包括电子注入器，具有至少一个量子阱的有源区和电子反射器的多层结构。在高能量水平下从注射器注入有源区域的电子以例如中红外波长的光子发射而放松到较低的能级。反射器反射在它们被注入的较高能级的电子，并且在发射光子之后从较低的能级发射电子。在多级结构的每一侧上形成多层半导体以提供穿过该器件的导电并提供所发射的光子的光学限制。

3. 发明申请

WO2005017568A2 SEMICONDUCTOR LIGHT SOURCES WITH DOPING GRADIENTS IN OPTICAL CONFINEMENT LAYERS FOR IMPROVED DEVICE EFFICIENCY 审中-公开
标题翻译：具有改善设备效率的光学配准层中的掺杂层的半导体光源
公开(公告)号：WO2005017568A2
公开(公告)日：2005-02-24
申请号：PCT/US2004/013979
申请日：2004-05-05
申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION , BOTEZ, Dan
发明人： BOTEZ, Dan
IPC分类号： G02B
CPC分类号： H01S5/22 , H01S5/2222 , H01S5/2226
摘要： Semiconductor light emitting sources are formed to have a substrate, an active region layer having one or more quantum wells, optical confinement layers surrounding the active region layer, and a p-type cladding layer and an n-type cladding layer surrounding the confinement layers and the active region layer. At least one of the optical confinement layers has a region of doping therein that is formed to provide a built-in electric field in the confinement layer that is directed to cause drift of carriers toward the active region. The electric field increases the transport speed of the injected holes or electrons, thereby reducing the non-ohmic voltage drop and increasing the overall efficiency of the light emitting source.
摘要翻译：半导体发光源形成为具有基板，具有一个以上的量子阱的有源区域层，围绕该有源区域层的光限制层，以及围绕限制层的p型覆层和n型覆层，活性区域层。光学限制层中的至少一个具有其中的掺杂区域，其被形成为在约束层中提供内部电场，该内部电场被引导以使载流子朝向有源区域漂移。电场增加注入的空穴或电子的传输速度，从而减少非欧姆电压降并提高发光源的整体效率。

4. 发明申请

WO2005065304A3 INTERSUBBAND MID-INFRARED ELECTROLUMINESCENT SEMICONDUCTOR DEVICES 审中-公开
标题翻译： INTERSUBBAN中红外电致发光半导体器件
公开(公告)号：WO2005065304A3
公开(公告)日：2006-05-26
申请号：PCT/US2004043622
申请日：2004-12-29
申请人： WISCONSIN ALUMNI RES FOUND , BOTEZ DAN , MIRABEDINI ALI R , XU DAPENG P , MAWST LUKE
发明人： BOTEZ DAN , MIRABEDINI ALI R , XU DAPENG P , MAWST LUKE
IPC分类号： H01S5/00 , H01S5/30 , H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3054 , H01S5/3419 , H01S5/34313
摘要： A semiconductor laser and light-emitting device is defined. The device comprises an electron injector (see Fig. 2, Character 12) and an active region (see Fig. 2, Character 14) adjacent to the electron injector. The active region (see Fig. 2, Character 14) includes at least one deep quantum well with barrier layers adjacent to either side of the quantum well or wells such that electrons injected from the electron injector into a high energy level of the quantum well relax to a lower energy level with the emission of a photon and are transmitted out to a region beyond the last barrier layer of the active region. The electron injector includes quantum well layers. The bottom of each deep quantum well or wells in the active region is lower in energy than the bottoms of the quantum well layers in the electron injector. The device may further comprise at least two stages wherein each stage contains an electron injector and an active region. The stages are separated by semiconductor layers that allow the transfer of electrons from the active region of one stage to the electron injector of the next stage.
摘要翻译：定义半导体激光器和发光器件。该装置包括与电子注入器相邻的电子注入器（见图2，字符12）和有源区（见图2，字符14）。有源区（见图2，字符14）包括至少一个具有与量子阱或阱的任一侧相邻的阻挡层的深量子阱，使得从电子注入器注入到量子阱的高能量水平的电子放松到发射光子的较低能级并被传送到超出有源区的最后阻挡层的区域。电子注入器包括量子阱层。每个深量子阱的底部或有源区中的阱的能量低于电子注入器中的量子阱层的底部。该装置还可以包括至少两个阶段，其中每个阶段包含电子注入器和有源区域。这些级由允许电子从一级的有源区转移到下一级的电子注入器的半导体层分开。

5. 发明申请

WO2008094311A3 INTERSUBBAND QUANTUM BOX STACK LASERS 审中-公开
公开(公告)号：WO2008094311A3
公开(公告)日：2008-08-07
申请号：PCT/US2007/076018
申请日：2007-08-15
申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION , BOTEZ, Dan
发明人： BOTEZ, Dan
IPC分类号： H01S5/00
摘要： The present invention provides semiconductor lasers having an Active-Photonic-Crystal (APC) structure that allows scaling of the coherent power by using a waveguide having a periodic structure that selects operation in a single spatial mode from large-aperture devices. The lasers include an active medium that includes an array of quantum box ministacks, each ministack containing 2 to 5 vertically stacked, coupled quantum boxes.

6. 发明申请

WO2008094311A2 INTERSUBBAND QUANTUM BOX STACK LASERS 审中-公开
标题翻译： INTERSUBBAND QUANTUM BOX堆叠激光
公开(公告)号：WO2008094311A2
公开(公告)日：2008-08-07
申请号：PCT/US2007076018
申请日：2007-08-15
申请人： WISCONSIN ALUMNI RES FOUND , BOTEZ DAN
发明人： BOTEZ DAN
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/105 , H01S5/2004 , H01S5/3412
摘要： The present invention provides semiconductor lasers having an Active-Photonic-Crystal (APC) structure that allows scaling of the coherent power by using a waveguide having a periodic structure that selects operation in a single spatial mode from large-aperture devices. The lasers include an active medium that includes an array of quantum box ministacks, each ministack containing 2 to 5 vertically stacked, coupled quantum boxes.
摘要翻译：本发明提供具有活性光子晶体（APC）结构的半导体激光器，其允许通过使用具有从大孔径器件选择在单个空间模式中操作的周期性结构的波导来缩放相干光焦度。激光器包括一个活性介质，其中包括一个量子盒子组件的阵列，每个组件包含2到5个垂直堆叠的耦合量子盒。

7. 发明申请

WO2007112164A2 HIGH EFFICIENCY INTERSUBBAND SEMICONDUCTOR LASERS 审中-公开
标题翻译：高效率的半导体激光器
公开(公告)号：WO2007112164A2
公开(公告)日：2007-10-04
申请号：PCT/US2007/062569
申请日：2007-02-22
申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION , BOTEZ, Dan , XU, Dapeng, P. , MAWST, Luke, J.
发明人： BOTEZ, Dan , XU, Dapeng, P. , MAWST, Luke, J.
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3407 , Y10S977/951
摘要： An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
摘要翻译：子带间量子级联激光器结构包括多个耦合激光器级，其中每个级具有包括电子注入器，具有至少一个量子阱的有源区和电子反射器的多层结构。在高能量水平下从注射器注入有源区域的电子以例如中红外波长的光子发射而放松到较低的能级。反射器反射在它们被注入的较高能级的电子，并且在发射光子之后从较低的能级发射电子。在多级结构的每一侧上形成多层半导体以提供穿过该器件的导电并提供所发射的光子的光学限制。

8. 发明申请

WO2005065304A2 INTERSUBBAND MID-INFRARED ELECTROLUMINESCENT SEMICONDUCTOR DEVICES 审中-公开
标题翻译： INTERSUBBAN中红外电致发光半导体器件
公开(公告)号：WO2005065304A2
公开(公告)日：2005-07-21
申请号：PCT/US2004/043622
申请日：2004-12-29
申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION , BOTEZ, Dan , MIRABEDINI, Ali R. , XU, Dapeng P. , MAWST, Luke
发明人： BOTEZ, Dan , MIRABEDINI, Ali R. , XU, Dapeng P. , MAWST, Luke
IPC分类号： H01S5/00 , H01S5/30 , H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3054 , H01S5/3419 , H01S5/34313
摘要： A semiconductor laser and light emitting device is defined. The device comprises an electron injector and an active region adjacent to the electron injector. The active region includes at least one deep quantum well with barrier layers adjacent to either side of the quantum well or wells such that electrons injected from the electron injector into a high energy level of the quantum well relax to a lower energy level with the emission of a photon and are transmitted out to a region beyond the last barrier layer of the active region. The electron injector includes quantum well layers. The bottom of each deep quantum well or wells in the active region is lower in energy than the bottoms of the quantum well layers in the electron injector. The device may further comprise at least two stages wherein each stage contains an electron injector and an active region. The stages are separated by semiconductor layers that allow the transfer of electrons from the active region of one stage to the electron injector of the next stage.
摘要翻译：定义半导体激光器和发光器件。该装置包括电子注入器和与电子注入器相邻的有源区。有源区域包括至少一个具有与量子阱或阱的任一侧相邻的势垒层的深量子阱，使得从电子注入器注入到量子阱的高能量级的电子放松到较低的能级，并且被发射到超出有源区的最后阻挡层的区域。电子注入器包括量子阱层。每个深量子阱的底部或有源区中的阱的能量低于电子注入器中的量子阱层的底部。该装置还可以包括至少两个阶段，其中每个阶段包含电子注入器和活性区域。这些级由允许电子从一级的有源区转移到下一级的电子注入器的半导体层分开。

9. 发明申请

WO2012125229A3 HIGH-POWER QUANTUM CASCADE LASERS WITH ACTIVE-PHOTONIC-CRYSTAL STRUCTURE FOR SINGLE, IN-PHASE MODE OPERATION 审中-公开
标题翻译：具有主动 - 光子晶体结构的大功率量子级激光器，用于单相，相模式操作
公开(公告)号：WO2012125229A3
公开(公告)日：2013-03-14
申请号：PCT/US2012023074
申请日：2012-01-30
申请人： WISCONSIN ALUMNI RES FOUND , BOTEZ DAN , KIRCH JEREMY D
发明人： BOTEZ DAN , KIRCH JEREMY D
IPC分类号： H01S5/40 , H01S5/20 , H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/105 , H01S5/12 , H01S5/2218 , H01S5/223 , H01S5/4031 , H01S2301/166
摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 µm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure, and a plurality of laterally-spaced trench regions extending transversely through the cladding and optical confinement structures, and partially into the QCL structure. The trench regions define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device. The element regions are characterized by a nonuniform structure across their widths. As a result of this structural non-uniformity, array modes composed of coupled first-order lateral modes of the element regions are preferentially suppressed relative to array modes composed of coupled fundamental lateral modes of the element regions.
摘要翻译：提供能够发射中长波长红外（即4-12μm）辐射的半导体激光阵列器件。这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构，以及横向延伸穿过包层和光限制结构的多个横向间隔开的沟槽区域，并且部分地延伸到QCL结构中。沟槽区域限定由激光器阵列器件中的元件区域分开的多个横向间隔的元件区域。元件区域的特征在于其宽度上的不均匀结构。作为这种结构不均匀的结果，相对于由元件区域的耦合的基本横向模式组成的阵列模式，优选地抑制由元件区域的耦合的一阶横向模式组成的阵列模式。

10. 发明申请

WO2012125229A2 HIGH-POWER QUANTUM CASCADE LASERS WITH ACTIVE-PHOTONIC-CRYSTAL STRUCTURE FOR SINGLE, IN-PHASE MODE OPERATION 审中-公开
标题翻译：具有主动 - 光子晶体结构的大功率量子级激光器，用于单相，相模式操作
公开(公告)号：WO2012125229A2
公开(公告)日：2012-09-20
申请号：PCT/US2012/023074
申请日：2012-01-30
申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION , BOTEZ, Dan , KIRCH, Jeremy D.
发明人： BOTEZ, Dan , KIRCH, Jeremy D.
IPC分类号： H01S5/40 , H01S5/34 , H01S5/20
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/105 , H01S5/12 , H01S5/2218 , H01S5/223 , H01S5/4031 , H01S2301/166
摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 µm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure, and a plurality of laterally-spaced trench regions extending transversely through the cladding and optical confinement structures, and partially into the QCL structure. The trench regions define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device. The element regions are characterized by a nonuniform structure across their widths. As a result of this structural non-uniformity, array modes composed of coupled first-order lateral modes of the element regions are preferentially suppressed relative to array modes composed of coupled fundamental lateral modes of the element regions.
摘要翻译：提供能够发射中长波长红外线（即4-12μm）辐射的半导体激光器阵列器件。这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构，以及横向延伸穿过包层和光限制结构的多个横向间隔开的沟槽区域，并且部分地延伸到QCL结构中。沟槽区域限定由激光器阵列器件中的元件区域分开的多个横向间隔的元件区域。元件区域的特征在于其宽度上的不均匀结构。作为这种结构不均匀的结果，相对于由元件区域的耦合的基本横向模式组成的阵列模式，优选地抑制由元件区域的耦合的一阶横向模式组成的阵列模式。

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