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1. 发明申请

WO2007112164A3 HIGH EFFICIENCY INTERSUBBAND SEMICONDUCTOR LASERS 审中-公开
标题翻译：高效率的半导体激光器
公开(公告)号：WO2007112164A3
公开(公告)日：2009-02-05
申请号：PCT/US2007062569
申请日：2007-02-22
申请人： WISCONSIN ALUMNI RES FOUND , BOTEZ DAN , XU DAPENG P , MAWST LUKE J
发明人： BOTEZ DAN , XU DAPENG P , MAWST LUKE J
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3407 , Y10S977/951
摘要： An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
摘要翻译：子带间量子级联激光器结构包括多个耦合激光器级，其中每个级具有包括电子注入器，具有至少一个量子阱的有源区和电子反射器的多层结构。在高能量水平下从注射器注入有源区域的电子以例如中红外波长的光子发射而放松到较低的能级。反射器反射在它们被注入的较高能级的电子，并且在发射光子之后从较低的能级发射电子。在多级结构的每一侧上形成多层半导体以提供穿过该器件的导电并提供所发射的光子的光学限制。

2. 发明申请

WO2005065304A3 INTERSUBBAND MID-INFRARED ELECTROLUMINESCENT SEMICONDUCTOR DEVICES 审中-公开
标题翻译： INTERSUBBAN中红外电致发光半导体器件
公开(公告)号：WO2005065304A3
公开(公告)日：2006-05-26
申请号：PCT/US2004043622
申请日：2004-12-29
申请人： WISCONSIN ALUMNI RES FOUND , BOTEZ DAN , MIRABEDINI ALI R , XU DAPENG P , MAWST LUKE
发明人： BOTEZ DAN , MIRABEDINI ALI R , XU DAPENG P , MAWST LUKE
IPC分类号： H01S5/00 , H01S5/30 , H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3054 , H01S5/3419 , H01S5/34313
摘要： A semiconductor laser and light-emitting device is defined. The device comprises an electron injector (see Fig. 2, Character 12) and an active region (see Fig. 2, Character 14) adjacent to the electron injector. The active region (see Fig. 2, Character 14) includes at least one deep quantum well with barrier layers adjacent to either side of the quantum well or wells such that electrons injected from the electron injector into a high energy level of the quantum well relax to a lower energy level with the emission of a photon and are transmitted out to a region beyond the last barrier layer of the active region. The electron injector includes quantum well layers. The bottom of each deep quantum well or wells in the active region is lower in energy than the bottoms of the quantum well layers in the electron injector. The device may further comprise at least two stages wherein each stage contains an electron injector and an active region. The stages are separated by semiconductor layers that allow the transfer of electrons from the active region of one stage to the electron injector of the next stage.
摘要翻译：定义半导体激光器和发光器件。该装置包括与电子注入器相邻的电子注入器（见图2，字符12）和有源区（见图2，字符14）。有源区（见图2，字符14）包括至少一个具有与量子阱或阱的任一侧相邻的阻挡层的深量子阱，使得从电子注入器注入到量子阱的高能量水平的电子放松到发射光子的较低能级并被传送到超出有源区的最后阻挡层的区域。电子注入器包括量子阱层。每个深量子阱的底部或有源区中的阱的能量低于电子注入器中的量子阱层的底部。该装置还可以包括至少两个阶段，其中每个阶段包含电子注入器和有源区域。这些级由允许电子从一级的有源区转移到下一级的电子注入器的半导体层分开。

3. 发明申请

WO2011084201A1 HIGH-POWER QUANTUM CASCADE LASERS WITH ACTIVE-PHOTONIC-CRYSTAL STRUCTURE 审中-公开
标题翻译：具有活性光子晶体结构的大功率量子体积激光器
公开(公告)号：WO2011084201A1
公开(公告)日：2011-07-14
申请号：PCT/US2010/051740
申请日：2010-10-07
申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION , BOTEZ, Dan , MAWST, Luke, J.
发明人： BOTEZ, Dan , MAWST, Luke, J.
IPC分类号： H01S5/30 , H01S5/34 , H01S5/40
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/02461 , H01S5/2224 , H01S5/3213 , H01S5/4031 , H01S5/4081
摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure; and a plurality of laterally-spaced trench regions extending transversely through the optical confinement and cladding structures, and partially into the QCL structure. The trench regions, each of which comprises a lower trench layer comprising a semi-insulating material and an upper trench layer comprising a material having a refractive index that is higher than that of the semi-insulating material, define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device.
摘要翻译：提供能够发射中长波长红外（即4-12μm）辐射的半导体激光阵列器件。所述装置包括包含一个或多个活性芯的量子级联激光（QCL）结构; 光学限制结构; 包层结构; 以及横向间隔开的沟槽区域，横向延伸穿过光学限制和包层结构，并且部分地延伸到QCL结构中。沟槽区域包括包含半绝缘材料的下沟槽层和包括折射率高于半绝缘材料的折射率的材料的上沟槽层限定多个横向间隔开的元件由激光阵列器件中的元件区域分隔的区域。

4. 发明申请

WO2007112164A2 HIGH EFFICIENCY INTERSUBBAND SEMICONDUCTOR LASERS 审中-公开
标题翻译：高效率的半导体激光器
公开(公告)号：WO2007112164A2
公开(公告)日：2007-10-04
申请号：PCT/US2007/062569
申请日：2007-02-22
申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION , BOTEZ, Dan , XU, Dapeng, P. , MAWST, Luke, J.
发明人： BOTEZ, Dan , XU, Dapeng, P. , MAWST, Luke, J.
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3407 , Y10S977/951
摘要： An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
摘要翻译：子带间量子级联激光器结构包括多个耦合激光器级，其中每个级具有包括电子注入器，具有至少一个量子阱的有源区和电子反射器的多层结构。在高能量水平下从注射器注入有源区域的电子以例如中红外波长的光子发射而放松到较低的能级。反射器反射在它们被注入的较高能级的电子，并且在发射光子之后从较低的能级发射电子。在多级结构的每一侧上形成多层半导体以提供穿过该器件的导电并提供所发射的光子的光学限制。

5. 发明申请

WO2005065304A2 INTERSUBBAND MID-INFRARED ELECTROLUMINESCENT SEMICONDUCTOR DEVICES 审中-公开
标题翻译： INTERSUBBAN中红外电致发光半导体器件
公开(公告)号：WO2005065304A2
公开(公告)日：2005-07-21
申请号：PCT/US2004/043622
申请日：2004-12-29
申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION , BOTEZ, Dan , MIRABEDINI, Ali R. , XU, Dapeng P. , MAWST, Luke
发明人： BOTEZ, Dan , MIRABEDINI, Ali R. , XU, Dapeng P. , MAWST, Luke
IPC分类号： H01S5/00 , H01S5/30 , H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3054 , H01S5/3419 , H01S5/34313
摘要： A semiconductor laser and light emitting device is defined. The device comprises an electron injector and an active region adjacent to the electron injector. The active region includes at least one deep quantum well with barrier layers adjacent to either side of the quantum well or wells such that electrons injected from the electron injector into a high energy level of the quantum well relax to a lower energy level with the emission of a photon and are transmitted out to a region beyond the last barrier layer of the active region. The electron injector includes quantum well layers. The bottom of each deep quantum well or wells in the active region is lower in energy than the bottoms of the quantum well layers in the electron injector. The device may further comprise at least two stages wherein each stage contains an electron injector and an active region. The stages are separated by semiconductor layers that allow the transfer of electrons from the active region of one stage to the electron injector of the next stage.
摘要翻译：定义半导体激光器和发光器件。该装置包括电子注入器和与电子注入器相邻的有源区。有源区域包括至少一个具有与量子阱或阱的任一侧相邻的势垒层的深量子阱，使得从电子注入器注入到量子阱的高能量级的电子放松到较低的能级，并且被发射到超出有源区的最后阻挡层的区域。电子注入器包括量子阱层。每个深量子阱的底部或有源区中的阱的能量低于电子注入器中的量子阱层的底部。该装置还可以包括至少两个阶段，其中每个阶段包含电子注入器和活性区域。这些级由允许电子从一级的有源区转移到下一级的电子注入器的半导体层分开。

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