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1. 发明申请

WO2012125229A3 HIGH-POWER QUANTUM CASCADE LASERS WITH ACTIVE-PHOTONIC-CRYSTAL STRUCTURE FOR SINGLE, IN-PHASE MODE OPERATION 审中-公开
标题翻译：具有主动 - 光子晶体结构的大功率量子级激光器，用于单相，相模式操作
公开(公告)号：WO2012125229A3
公开(公告)日：2013-03-14
申请号：PCT/US2012023074
申请日：2012-01-30
申请人： WISCONSIN ALUMNI RES FOUND , BOTEZ DAN , KIRCH JEREMY D
发明人： BOTEZ DAN , KIRCH JEREMY D
IPC分类号： H01S5/40 , H01S5/20 , H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/105 , H01S5/12 , H01S5/2218 , H01S5/223 , H01S5/4031 , H01S2301/166
摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 µm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure, and a plurality of laterally-spaced trench regions extending transversely through the cladding and optical confinement structures, and partially into the QCL structure. The trench regions define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device. The element regions are characterized by a nonuniform structure across their widths. As a result of this structural non-uniformity, array modes composed of coupled first-order lateral modes of the element regions are preferentially suppressed relative to array modes composed of coupled fundamental lateral modes of the element regions.
摘要翻译：提供能够发射中长波长红外（即4-12μm）辐射的半导体激光阵列器件。这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构，以及横向延伸穿过包层和光限制结构的多个横向间隔开的沟槽区域，并且部分地延伸到QCL结构中。沟槽区域限定由激光器阵列器件中的元件区域分开的多个横向间隔的元件区域。元件区域的特征在于其宽度上的不均匀结构。作为这种结构不均匀的结果，相对于由元件区域的耦合的基本横向模式组成的阵列模式，优选地抑制由元件区域的耦合的一阶横向模式组成的阵列模式。

2. 发明申请

WO2015130358A3 SUBSTRATE-EMITTING TRANSVERSE MAGNETIC POLARIZED LASER EMPLOYING A METAL/SEMICONDUCTOR DISTRIBUTED FEEDBACK GRATING FOR SYMMETRIC-MODE OPERATION 审中-公开
标题翻译：采用金属/半导体分布反馈光栅进行对称模式操作的基底发射横向磁偏振激光器
公开(公告)号：WO2015130358A3
公开(公告)日：2015-10-22
申请号：PCT/US2014067130
申请日：2014-11-24
申请人： WISCONSIN ALUMNI RES FOUND
发明人： MAWST LUKE J , BOTEZ DAN , EARLES THOMAS L , KIRCH JEREMY D , SIGLER CHRISTOPHER A
IPC分类号： H01S5/125
CPC分类号： H01S5/3401 , H01S5/1046 , H01S5/1228 , H01S5/187 , H01S5/3402 , H01S5/34306 , H01S2301/145
摘要： Semiconductor lasers comprise a substrate; an active layer configured to generate transverse magnetic (TM) polarized light under an electrical bias; an upper cladding layer; a lower cladding layer; and a distributed feedback (DFB) grating defined by the interface of a layer of metal and a layer of semiconductor under the layer of metal, the interface periodically corrugated in the longitudinal direction of the laser with a periodicity of ΛDFB = mλ/(2n eff), wherein m > 1. The DFB grating is configured such that loss of one or more antisymmetric longitudinal modes of the laser structure via absorption to the DFB grating is sufficiently maximized so as to produce lasing of a symmetric longitudinal mode of the laser with laser emission characterized by a single-lobe beam along each direction defined by the grating diffraction orders corresponding to emission away from the plane of the grating.
摘要翻译：半导体激光器包括衬底; 配置成在电偏压下产生横向磁（TM）偏振光的有源层; 上覆层; 下包层; 和由金属层和金属层下面的半导体层界面限定的分布反馈（DFB）光栅，界面周期性地在激光器的纵向方向上以波长周期性地起伏，其中ΔDFB=mλ/（2n eff ），其中m> 1。该DFB光栅被配置为使得通过吸收到DFB光栅的激光器结构的一个或多个反对称纵向模式的损失被充分地最大化，以便用激光器产生激光器的对称纵模激光发射，其特征在于沿着每个方向的单波束特征，所述每个方向由与离开光栅平面的发射相对应的光栅衍射阶次限定。

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