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1. 发明申请

WO2007112164A2 HIGH EFFICIENCY INTERSUBBAND SEMICONDUCTOR LASERS 审中-公开
标题翻译：高效率的半导体激光器
公开(公告)号：WO2007112164A2
公开(公告)日：2007-10-04
申请号：PCT/US2007/062569
申请日：2007-02-22
申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION , BOTEZ, Dan , XU, Dapeng, P. , MAWST, Luke, J.
发明人： BOTEZ, Dan , XU, Dapeng, P. , MAWST, Luke, J.
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3407 , Y10S977/951
摘要： An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
摘要翻译：子带间量子级联激光器结构包括多个耦合激光器级，其中每个级具有包括电子注入器，具有至少一个量子阱的有源区和电子反射器的多层结构。在高能量水平下从注射器注入有源区域的电子以例如中红外波长的光子发射而放松到较低的能级。反射器反射在它们被注入的较高能级的电子，并且在发射光子之后从较低的能级发射电子。在多级结构的每一侧上形成多层半导体以提供穿过该器件的导电并提供所发射的光子的光学限制。

2. 发明公开

EP2002518A2 HIGH EFFICIENCY INTERSUBBAND SEMICONDUCTOR LASERS 审中-公开
标题翻译： HOCHLEISTUNGSFÄHIGEINTERSUBBAN-HALBLEITERLASER
公开(公告)号：EP2002518A2
公开(公告)日：2008-12-17
申请号：EP07757323.6
申请日：2007-02-22
申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION
发明人： BOTEZ, Dan , XU, Dapeng, P. , MAWST, Luke, J.
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3407 , Y10S977/951
摘要： An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
摘要翻译：子带间量子级联激光器结构包括多个耦合激光器级，其中每个级具有包括电子注入器，具有至少一个量子阱的有源区和电子反射器的多层结构。从喷射器以高能量水平注入有源区域的电子以例如中红外波长的光子发射而放松到较低的能级。反射器反射在它们被注入的较高能级的电子，并且在发射光子之后从较低能级发射电子。在多级结构的每一侧上形成多层半导体以提供穿过该器件的导电并提供所发射的光子的光学限制。

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