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1. 发明授权

US06642585B2 Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same 失效
标题翻译：具有包括多晶硅层和金属层的堆叠结构的栅电极的半导体器件及其制造方法
公开(公告)号：US06642585B2
公开(公告)日：2003-11-04
申请号：US09414824
申请日：1999-10-08
申请人： Kazuya Ohuchi , Atsushi Azuma
发明人： Kazuya Ohuchi , Atsushi Azuma
IPC分类号： H01L2976
CPC分类号： H01L21/76897 , H01L21/28061 , H01L29/6656 , H01L29/6659
摘要： The present invention provides a semiconductor device, comprising a gate electrode of a stacked structure consisting of a polysilicon layer and a metal layer, a cap insulating film formed on the gate electrode, and a gate side wall film formed on the side wall of the gate electrode. The cap insulating film consists of an insulating film containing a silicon oxide-based layer and a silicon nitride layer and serves to protect the upper surface of the gate electrode. Further, the gate side wall film consists of an insulating film containing a silicon nitride film and a silicon oxide film and serves to protect the side surface of the gate electrode.
摘要翻译：本发明提供了一种半导体器件，包括由多晶硅层和金属层组成的堆叠结构的栅极电极，形成在栅电极上的帽绝缘膜和形成在栅极侧壁上的栅极侧壁膜电极。盖绝缘膜由含有氧化硅基层和氮化硅层的绝缘膜构成，用于保护栅电极的上表面。此外，栅极侧壁膜由含有氮化硅膜和氧化硅膜的绝缘膜构成，用于保护栅电极的侧面。

2. 发明授权

US5531650A Power transmission belt 失效
标题翻译：动力传动皮带
公开(公告)号：US5531650A
公开(公告)日：1996-07-02
申请号：US501023
申请日：1995-08-11
申请人： Atsushi Azuma
发明人： Atsushi Azuma
IPC分类号： F16G1/28 , F16G5/06 , F16G5/20 , F16G1/10
CPC分类号： F16G5/06 , F16G1/28 , F16G5/20
摘要： What is disclosed is a power transmission belt including a laminate composed of an adhesive rubber layer in which core wires are buried and a compressed rubber layer, to the periphery of which being adhered canvas, characterized in that the above-mentioned canvas is impregnated with an aqueous latex composition comprising 2-chloro-1,3-butadiene-2,3-dichloro-1,3-butadiene copolymer latex. The power transmission belt of the present invention does not necessitate any organic solvents and is excellent in thermal resistance, and especially has great adhesion force between the rubber layers and the canvas.
摘要翻译： PCT No.PCT / JP94 / 02115 Sec。 371日期：1995年8月11日 102（e）日期1995年8月11日PCT 1994年12月15日PCT PCT。出版物WO95 / 16865 日期：1995年6月22日。公开了一种动力传递带，其包括由其中埋入芯线的粘合橡胶层和压缩橡胶层组成的层压体，其周边粘附在帆布上，其特征在于，上述用包含2-氯-1,3-丁二烯-2,3-二氯-1,3-丁二烯共聚物胶乳的水性胶乳组合物浸渍所述帆布。本发明的动力传递带不需要任何有机溶剂，并且耐热性优异，特别是在橡胶层和帆布之间具有很大的粘附力。

3. 发明申请

US20070184623A1 Semiconductor device comprising buried channel region and method for manufacturing the same 失效
公开(公告)号：US20070184623A1
公开(公告)日：2007-08-09
申请号：US11727735
申请日：2007-03-28
申请人： Satoshi Matsuda , Atsushi Azuma
发明人： Satoshi Matsuda , Atsushi Azuma
IPC分类号： H01L21/336
CPC分类号： H01L29/66537 , H01L21/266 , H01L21/28079 , H01L21/28114 , H01L29/1083 , H01L29/42368 , H01L29/42376 , H01L29/495 , H01L29/66545 , H01L29/6656 , H01L29/7838
摘要： A semiconductor device includes a gate insulating film formed on a semiconductor substrate between first diffusion layers, a gate electrode including a first gate portion formed on the gate insulating film and a second gate portion formed on the first gate portion, a first width in a channel direction of the first gate portion being substantially equal to a width in that of the gate insulating film, and a second width in the channel direction of the second gate portion being larger than the first width, a gate side wall insulating film including a first side wall portion formed on a side surface of the first gate portion and the gate insulating film and a second side wall portion formed on a side surface of the second gate portion, and a second diffusion layer formed apart from the first diffusion layers below the gate insulating film.

4. 发明授权

US06897534B2 Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same 失效
标题翻译：具有包括多晶硅层和金属层的堆叠结构的栅电极的半导体器件及其制造方法
公开(公告)号：US06897534B2
公开(公告)日：2005-05-24
申请号：US10654925
申请日：2003-09-05
申请人： Kazuya Ohuchi , Atsushi Azuma
发明人： Kazuya Ohuchi , Atsushi Azuma
IPC分类号： H01L29/78 , H01L21/28 , H01L21/318 , H01L21/336 , H01L21/60 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L21/76897 , H01L21/28061 , H01L29/6656 , H01L29/6659
摘要： The present invention provides a semiconductor device, comprising a gate electrode of a stacked structure consisting of a polysilicon layer and a metal layer, a cap insulating film formed on the gate electrode, and a gate side wall film formed on the side wall of the gate electrode. The cap insulating film consists of an insulating film containing a silicon oxide-based layer and a silicon nitride layer and serves to protect the upper surface of the gate electrode. Further, the gate side wall film consists of an insulating film containing a silicon nitride film and a silicon oxide film and serves to protect the side surface of the gate electrode.
摘要翻译：本发明提供了一种半导体器件，包括由多晶硅层和金属层组成的堆叠结构的栅极电极，形成在栅电极上的帽绝缘膜和形成在栅极侧壁上的栅极侧壁膜电极。盖绝缘膜由含有氧化硅基层和氮化硅层的绝缘膜构成，用于保护栅电极的上表面。此外，栅极侧壁膜由含有氮化硅膜和氧化硅膜的绝缘膜构成，用于保护栅电极的侧面。

5. 发明申请

US20110281819A1 LOW-MOLECULAR POLYSULFATED HYALURONIC ACID DERIVATIVE AND MEDICINE CONTAINING SAME 有权
标题翻译：低分子量聚羟基丙酸衍生物和含有其的药物
公开(公告)号：US20110281819A1
公开(公告)日：2011-11-17
申请号：US13143129
申请日：2010-02-01
申请人： Kazuaki Kakehi , Hiroaki Asai , Naohiro Hayashi , Satoshi Shimizu , Fumitaka Goto , Yasuo Koga , Takahiro Tomoyasu , Takao Taki , Yusuke Kato , Satoru Nakazato , Junji Takaba , Atsushi Azuma , Wakako Hirano , Kazunari Izumi , Minoru Kashimoto , Yoko Sakamoto , Takashi Hayashi , Masaru Nishida
发明人： Kazuaki Kakehi , Hiroaki Asai , Naohiro Hayashi , Satoshi Shimizu , Fumitaka Goto , Yasuo Koga , Takahiro Tomoyasu , Takao Taki , Yusuke Kato , Satoru Nakazato , Junji Takaba , Atsushi Azuma , Wakako Hirano , Kazunari Izumi , Minoru Kashimoto , Yoko Sakamoto , Takashi Hayashi , Masaru Nishida
IPC分类号： A61K31/728 , A61P11/06 , A61P17/00 , C08B37/08 , A61P37/08
CPC分类号： A61K31/728 , C08B37/0072
摘要： A low-molecular-weight polysulfated hyaluronic acid derivative useful for prevention and/or treatment of an allergic disease. An agent for prevention and/or treatment of an allergic disease selected from pollinosis, allergic rhinitis, allergic conjunctivitis, atopic dermatitis, and asthma, represented by the following general formula (IA) or (IB); wherein n represents a number of 0 to 15; R′s each independently represent a hydrogen atom or an SO3H group etc.
摘要翻译：用于预防和/或治疗过敏性疾病的低分子量多硫酸化透明质酸衍生物。由以下通式（IA）或（IB）表示的预防和/或治疗选自传粉炎，过敏性鼻炎，过敏性结膜炎，特应性皮炎和哮喘的过敏性疾病的药剂; 其中n表示0〜15的数; R各自独立地表示氢原子或SO 3 H基等

6. 发明申请

US20090140344A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090140344A1
公开(公告)日：2009-06-04
申请号：US12189439
申请日：2008-08-11
申请人： Atsushi Azuma
发明人： Atsushi Azuma
IPC分类号： H01L29/66
CPC分类号： H01L29/4983 , H01L27/11 , H01L27/1104
摘要： A semiconductor device including a SRAM cell may include a data holding unit including a driver transistor and a load transistor, and receiving and holding data; and a data transferring unit including a transfer gate transistor whose source and drain are connected between the data holding unit and one of a pair of bit lines, and whose gate is connected to a word line, the data transferring unit either transferring the data transferred from the one of the pair of bit lines to the data holding unit or receiving the data held in the data holding unit and transferring the data to the one of the pair of bit lines, wherein at least one of the driver transistor and the load transistor has higher capacitance between the gate and the source and between the gate and the drain than the transfer gate transistor.
摘要翻译：包括SRAM单元的半导体器件可以包括包括驱动晶体管和负载晶体管的数据保持单元，以及接收和保持数据; 以及数据传送单元，其包括传输栅极晶体管，其源极和漏极连接在数据保持单元和一对位线中的一个位线之间，并且其栅极连接到字线，数据传送单元传送从数据保持单元的一对位线中的一个或接收保存在数据保持单元中的数据并将数据传送到该对位线中的一个，其中驱动晶体管和负载晶体管中的至少一个具有栅极和源极之间以及栅极和漏极之间的电容比传输栅极晶体管更高。

7. 发明授权

US06933590B2 Semiconductor device comprising plurality of semiconductor areas having the same top surface and different film thicknesses and manufacturing method for the same 失效
标题翻译：半导体器件包括具有相同顶表面和不同膜厚度的多个半导体区域及其制造方法
公开(公告)号：US06933590B2
公开(公告)日：2005-08-23
申请号：US10653093
申请日：2003-09-03
申请人： Takashi Yamada , Atsushi Azuma , Yoshihiro Minami , Hajime Nagano , Hiroaki Yamada , Tatsuya Ohguro , Kenji Kojima , Kazumi Inoh
发明人： Takashi Yamada , Atsushi Azuma , Yoshihiro Minami , Hajime Nagano , Hiroaki Yamada , Tatsuya Ohguro , Kenji Kojima , Kazumi Inoh
IPC分类号： H01L21/02 , H01L21/762 , H01L21/8242 , H01L21/84 , H01L23/52 , H01L27/02 , H01L27/108 , H01L27/12 , H01L29/06
CPC分类号： H01L27/10894 , H01L21/76281 , H01L21/76289 , H01L21/84 , H01L27/0218 , H01L27/10829 , H01L27/10897 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： A convex polycrystalline silicon film is formed on a handle wafer. A semiconductor layer is formed on the polycrystalline silicon film. The semiconductor is thinner on its areas in which the convex polycrystalline silicon film is formed and is thicker on its areas in which the convex polycrystalline silicon film is not formed. An opening is formed in each of those areas of an insulating film which are located under respective thick-film semiconductor areas of the semiconductor layer. The polycrystalline silicon film is formed in the openings to connect electrically the thick-film semiconductor areas and the handle wafer together.
摘要翻译：在手柄晶片上形成凸多晶硅膜。在多晶硅膜上形成半导体层。半导体在其形成凸多晶硅膜的区域较薄，并且在其中未形成凸多晶硅膜的区域较厚。在位于半导体层的各个厚膜半导体区域的绝缘膜的每个区域中形成开口。在开口中形成多晶硅膜，以将厚膜半导体区域和处理晶片电连接在一起。

8. 发明授权

US08993536B2 Low-molecular polysulfated hyaluronic acid derivative and medicine containing same 有权
标题翻译：低分子多硫酸化透明质酸衍生物及其含有药物
公开(公告)号：US08993536B2
公开(公告)日：2015-03-31
申请号：US13143129
申请日：2010-02-01
申请人： Kazuaki Kakehi , Hiroaki Asai , Naohiro Hayashi , Satoshi Shimizu , Fumitaka Goto , Yasuo Koga , Takahiro Tomoyasu , Takao Taki , Yusuke Kato , Satoru Nakazato , Junji Takaba , Atsushi Azuma , Wakako Hirano , Kazunari Izumi , Minoru Kashimoto , Yoko Sakamoto , Takashi Hayashi , Masaru Nishida
发明人： Kazuaki Kakehi , Hiroaki Asai , Naohiro Hayashi , Satoshi Shimizu , Fumitaka Goto , Yasuo Koga , Takahiro Tomoyasu , Takao Taki , Yusuke Kato , Satoru Nakazato , Junji Takaba , Atsushi Azuma , Wakako Hirano , Kazunari Izumi , Minoru Kashimoto , Yoko Sakamoto , Takashi Hayashi , Masaru Nishida
IPC分类号： A61K31/728 , A61P11/06 , A61P17/00 , A61P37/08 , C08B37/08
CPC分类号： A61K31/728 , C08B37/0072
摘要： A low-molecular-weight polysulfated hyaluronic acid derivative useful for treatment of an allergic disease. An agent for treatment of an allergic disease selected from pollinosis, allergic rhinitis, allergic conjunctivitis, atopic dermatitis, and asthma, represented by the following general formula (IA) or (IB); wherein n represents a number of 0 to 15; R's each independently represent a hydrogen atom or an SO3H group etc.
摘要翻译：用于治疗过敏性疾病的低分子量多硫酸化透明质酸衍生物。用于治疗选自以下通式（IA）或（IB）表示的花粉病，过敏性鼻炎，过敏性结膜炎，特应性皮炎和哮喘的过敏性疾病的药剂; 其中n表示0〜15的数; R各自独立地表示氢原子或SO 3 H基等

9. 发明授权

US07880237B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07880237B2
公开(公告)日：2011-02-01
申请号：US12189439
申请日：2008-08-11
申请人： Atsushi Azuma
发明人： Atsushi Azuma
IPC分类号： H01L21/70
CPC分类号： H01L29/4983 , H01L27/11 , H01L27/1104
摘要： A semiconductor device including a SRAM cell may include a data holding unit including a driver transistor and a load transistor, and receiving and holding data; and a data transferring unit including a transfer gate transistor whose source and drain are connected between the data holding unit and one of a pair of bit lines, and whose gate is connected to a word line, the data transferring unit either transferring the data transferred from the one of the pair of bit lines to the data holding unit or receiving the data held in the data holding unit and transferring the data to the one of the pair of bit lines, wherein at least one of the driver transistor and the load transistor has higher capacitance between the gate and the source and between the gate and the drain than the transfer gate transistor.
摘要翻译：包括SRAM单元的半导体器件可以包括包括驱动晶体管和负载晶体管的数据保持单元，以及接收和保持数据; 以及数据传送单元，其包括传输栅极晶体管，其源极和漏极连接在数据保持单元和一对位线中的一个位线之间，并且其栅极连接到字线，数据传送单元传送从数据保持单元的一对位线中的一个或接收保存在数据保持单元中的数据并将数据传送到该对位线中的一个，其中驱动晶体管和负载晶体管中的至少一个具有栅极和源极之间以及栅极和漏极之间的电容比传输栅极晶体管更高。

10. 发明申请

US20070246750A1 Control of body potential of partially-depleted field-effect transistors 审中-公开
标题翻译：部分耗尽的场效应晶体管的体电位的控制
公开(公告)号：US20070246750A1
公开(公告)日：2007-10-25
申请号：US11406381
申请日：2006-04-19
申请人： Atsushi Azuma
发明人： Atsushi Azuma
IPC分类号： H01L29/80
CPC分类号： H01L21/26506 , H01L29/66636 , H01L29/7834
摘要： A partially-depleted silicon-on-insulator (SOI) field-effect transistor (FET) with a reduced off-current is described, as well as methods for manufacturing. This may be accomplished by providing an SOI FET having a lower body potential than in previous SOI FETs. To lower the body potential, carrier traps may be formed mainly in the neutral source and drain regions of the SOI FET by extra over-etching of the gate spacers and the underlying silicon layer.
摘要翻译：描述了具有减小的截止电流的部分耗尽的绝缘体上硅（SOI）场效应晶体管（FET）以及制造方法。这可以通过提供具有比先前的SOI FET更低的体电位的SOI FET来实现。为了降低体电位，可以通过栅极间隔物和下面的硅层的过度蚀刻主要在SOI FET的中性源极和漏极区域中形成载流子阱。

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