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1. 发明申请

WO2011084127A3 METHODOLOGY FOR CLEANING OF SURFACE METAL CONTAMINATION FROM AN UPPER ELECTRODE USED IN A PLASMA CHAMBER 审中-公开
标题翻译：用于在等离子室中使用上电极清洁表面金属污染的方法
公开(公告)号：WO2011084127A3
公开(公告)日：2011-10-13
申请号：PCT/US2010003092
申请日：2010-12-06
申请人： LAM RES CORP , SHIH HONG , AVOYAN ARMEN , DESHMUKH SHASHANK C , CARMAN DAVID
发明人： SHIH HONG , AVOYAN ARMEN , DESHMUKH SHASHANK C , CARMAN DAVID
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： B08B3/08
摘要： A method for cleaning metallic contaminants from an upper electrode used in a plasma chamber. The method comprises a step of soaking the upper electrode in a cleaning solution of concentrated ammonium hydroxide, hydrogen peroxide and water. The cleaning solution is free of hydrofluoric acid and hydrochloric acid. The method further comprises an optional step of soaking the upper electrode in dilute nitric acid and rinsing the cleaned upper electrode.
摘要翻译：一种用于从等离子体室中使用的上电极清除金属污染物的方法。该方法包括将上电极浸泡在浓氢氧化铵，过氧化氢和水的清洁溶液中的步骤。清洁液不含氢氟酸和盐酸。该方法还包括将上电极浸泡在稀硝酸中并冲洗清洁后的上电极的可选步骤。

2. 发明申请

WO2010002724A2 PERIPHERALLY ENGAGING ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME 审中-公开
标题翻译：外围接触电极载体和组装体
公开(公告)号：WO2010002724A2
公开(公告)日：2010-01-07
申请号：PCT/US2009048797
申请日：2009-06-26
申请人： LAM RES CORP , AUGUSTINO JASON , AVOYAN ARMEN , FANG YAN , OUTKA DUANE , SHIH HONG , WHITTEN STEPHEN
发明人： AUGUSTINO JASON , AVOYAN ARMEN , FANG YAN , OUTKA DUANE , SHIH HONG , WHITTEN STEPHEN
IPC分类号： H05H1/34
CPC分类号： H01J37/32541 , H01J37/32009 , H01J37/32605 , H01L21/67069
摘要： In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated.
摘要翻译：根据本公开的一个实施例，提供了包括多组分电极和外围接合电极载体的组件。外围接合电极载体包括载体框架和多个往复电极支撑件。多组分电极位于载体框架的电极容纳孔中。电极的背板包括围绕其周边形成的多个安装凹部。往复式电极支撑件可以往复运动进入和离开安装凹槽。考虑到更广泛和更窄范围的另外的实施例。

3. 发明申请

WO2010002724A3 PERIPHERALLY ENGAGING ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME 审中-公开
公开(公告)号：WO2010002724A3
公开(公告)日：2010-01-07
申请号：PCT/US2009/048797
申请日：2009-06-26
申请人： LAM RESEARCH CORPORATION , AUGUSTINO, Jason , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
发明人： AUGUSTINO, Jason , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
IPC分类号： H05H1/34
摘要： In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated.

4. 发明申请

WO2005098091B1 A METHOD OF PLASMA ETCH ENDPOINT DETECTION USING A V-I PROBE DIAGNOSTICS 审中-公开
标题翻译：使用V-I探针诊断的等离子体端点检测方法
公开(公告)号：WO2005098091B1
公开(公告)日：2007-04-26
申请号：PCT/US2005011214
申请日：2005-03-30
申请人： LAM RES CORP , AVOYAN ARMEN , DASSAPA FRANCOIS CHANDRASEKAR , MCMILLIN BRIAN
发明人： AVOYAN ARMEN , DASSAPA FRANCOIS CHANDRASEKAR , MCMILLIN BRIAN
IPC分类号： H01L21/3065 , C23F1/00 , H01J37/32 , H01L21/311
CPC分类号： H01J37/32082 , H01J37/32935 , H01J37/32963 , H01L21/31116
摘要： A plasma processing control system including a V-I probe for effectively monitoring a plasma processing chamber, where the probe can provide electrical parameters in response to a radio frequency (RF) supply (e.g., about 2 MHz, about 27 MHz, or about 60 MHz), a processor coupled to and/or included with a commercially available probe product that can provide harmonics for each of the electrical parameters, and a controller coupled to the processor that can select one of the electrical parameters and one of the associated harmonics for endpoint detection for a plasma processing step is disclosed. The electrical parameters can include voltage, phase, and current and the plasma processing application can be dielectric etching. A system according to embodiments of the invention may be particularly suited for dielectric etching in a production environment.
摘要翻译：一种等离子体处理控制系统，包括用于有效监测等离子体处理室的VI探头，其中探针可以响应于射频（RF）电源（例如约2MHz，约27MHz或约60MHz）提供电参数，耦合到和/或包含在市售的探针产品中的处理器，其可以为每个电参数提供谐波，以及耦合到处理器的控制器，其可以选择电参数之一和用于端点检测的相关谐波之一公开了一种等离子体处理步骤。电气参数可以包括电压，相位和电流，等离子体处理应用可以是电介质蚀刻。根据本发明的实施例的系统可以特别适用于生产环境中的电介质蚀刻。

5. 发明申请

WO2005098091A3 A METHOD OF PLASMA ETCH ENDPOINT DETECTION USING A V-I PROBE DIAGNOSTICS 审中-公开
标题翻译：一种使用V-I探头诊断的等离子蚀刻终点检测方法
公开(公告)号：WO2005098091A3
公开(公告)日：2007-03-15
申请号：PCT/US2005011214
申请日：2005-03-30
申请人： LAM RES CORP , AVOYAN ARMEN , DASSAPA FRANCOIS CHANDRASEKAR , MCMILLIN BRIAN
发明人： AVOYAN ARMEN , DASSAPA FRANCOIS CHANDRASEKAR , MCMILLIN BRIAN
IPC分类号： H01L21/3065 , C23F1/00 , H01J37/32 , H01L21/311
CPC分类号： H01J37/32082 , H01J37/32935 , H01J37/32963 , H01L21/31116
摘要： A plasma processing control system including a V-I probe for effectively monitoring a plasma processing chamber, where the probe can provide electrical parameters in response to a radio frequency (RF) supply (e.g., about 2 MHz, about 27 MHz, or about 60 MHz), a processor coupled to and/or included with a commercially available probe product that can provide harmonics for each of the electrical parameters, and a controller coupled to the processor that can select one of the electrical parameters and one of the associated harmonics for endpoint detection for a plasma processing step is disclosed. The electrical parameters can include voltage, phase, and current and the plasma processing application can be dielectric etching. A system according to embodiments of the invention may be particularly suited for dielectric etching in a production environment.
摘要翻译：包括用于有效地监测等离子体处理室的VI探针的等离子体处理控制系统，其中探针可响应于射频（RF）供给（例如，约2MHz，约27MHz或约60MHz）提供电参数，，耦合到和/或包括在市场上可买到的探针产品中的处理器，所述探针产品可以为每个电参数提供谐波，以及耦合到处理器的控制器，其可以选择电参数中的一个和用于端点检测的相关谐波之一公开了等离子体处理步骤。电参数可以包括电压，相位和电流，并且等离子体处理应用可以是电介质蚀刻。根据本发明实施例的系统可以特别适用于生产环境中的电介质蚀刻。

6. 发明申请

WO2005054880A1 METHOD FOR TOOLMATCHING AND TROUBLESHOOTING A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：一种等离子体加工系统的工具化和故障排除方法
公开(公告)号：WO2005054880A1
公开(公告)日：2005-06-16
申请号：PCT/US2004/037408
申请日：2004-11-09
申请人： LAM RESEARCH CORPORATION , JAFARIAN-TEHRANI, Seyed, Jafar , AVOYAN, Armen
发明人： JAFARIAN-TEHRANI, Seyed, Jafar , AVOYAN, Armen
IPC分类号： G01R27/26
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32935
摘要： A plasma processing system having a grounded chamber and an RF power feed connected to a bottom electrode is tested. A first capacitance between the bottom electrode and the grounded chamber is measured at atmosphere. Consumable hardware parts are installed in the chamber. A second capacitance between the bottom electrode and the grounded chamber is measured at vacuum with the grounded chamber including all of the installed consumable hardware parts. The first capacitance measurement and the second capacitance measurement are respectively compared with a first reference value and a second reference value to identify and determine any defects in the plasma processing system. The first and second reference value respectively are representative of the capacitance of a defect-free chamber at atmosphere and the capacitance of a defect-free chamber including all of the installed consumable hardware parts at vacuum.
摘要翻译：测试具有接地室和连接到底部电极的RF功率馈送的等离子体处理系统。在大气中测量底部电极和接地室之间的第一电容。消耗品硬件部件安装在室内。在真空下测量底部电极和接地室之间的第二电容，接地室包括所有安装的可消耗的硬件部件。第一电容测量和第二电容测量分别与第一参考值和第二参考值进行比较，以识别和确定等离子体处理系统中的任何缺陷。第一和第二参考值分别代表大气中无缺陷室的电容和包括所有在真空下安装的消耗性硬件部件的无缺陷室的电容。

7. 发明申请

WO2013012693A1 DUAL PHASE CLEANING CHAMBERS AND ASSEMBLIES COMPRISING THE SAME 审中-公开
标题翻译：双相清洗器和包括该相机的组件
公开(公告)号：WO2013012693A1
公开(公告)日：2013-01-24
申请号：PCT/US2012/046579
申请日：2012-07-13
申请人： LAM RESEARCH CORPORATION , AVOYAN, Armen , LA CROIX, Cliff , SHIH, Hong
发明人： AVOYAN, Armen , LA CROIX, Cliff , SHIH, Hong
IPC分类号： H05H1/34 , H01L21/3065 , C23C16/505
CPC分类号： H01J37/32862 , B08B3/00 , B08B3/02 , H01J21/00 , H01J37/32532 , H01L21/00
摘要： In one embodiment, a dual phase cleaning chamber may include a turbulent mixing chamber, a fluid diffuser, an isostatic pressure chamber and a rupture mitigating nozzle. The turbulent mixing chamber may be in fluid communication with a first fluid inlet and a second fluid inlet. The fluid diffuser may be in fluid communication with the turbulent mixing chamber. The rupture mitigating nozzle may include a first fluid collecting offset, a second fluid collecting offset, and a displacement damping projection. The displacement damping projection may be disposed between the first and second fluid collecting offset and may be offset away from each of the first fluid collecting offset and the second fluid collecting offset, and towards the fluid diffuser. A pressurized cleaning fluid introduced from the first fluid inlet, the second fluid inlet, or both flows through the outlet passage of the first and second fluid collecting offset.
摘要翻译：在一个实施例中，双相清洗室可以包括湍流混合室，流体扩散器，等静压压力室和破裂缓冲喷嘴。湍流混合室可以与第一流体入口和第二流体入口流体连通。流体扩散器可以与湍流混合室流体连通。破裂缓冲喷嘴可以包括第一流体收集偏移，第二流体收集偏移和位移阻尼突起。位移阻尼突起可以设置在第一和第二流体收集偏移之间，并且可以偏离第一流体收集偏移和第二流体收集偏移中的每一个并且朝向流体扩散器偏移。从第一流体入口，第二流体入口或二者引入的加压清洁流体流过第一和第二流体收集偏移的出口通道。

8. 发明申请

WO2012061362A3 ELECTRODE SECURING PLATENS AND ELECTRODE POLISHING ASSEMBLIES INCORPORATING THE SAME 审中-公开
标题翻译：电极固定平板和电极抛光组件并入其中
公开(公告)号：WO2012061362A3
公开(公告)日：2012-09-07
申请号：PCT/US2011058745
申请日：2011-11-01
申请人： LAM RES CORP , LA CROIX CLIFF , AVOYAN ARMEN , OUTKA DUANE , ZHOU CATHERINE , SHIH HONG
发明人： LA CROIX CLIFF , AVOYAN ARMEN , OUTKA DUANE , ZHOU CATHERINE , SHIH HONG
IPC分类号： H01L21/304
CPC分类号： B24B37/30 , B24B41/061
摘要： In one embodiment, an electrode polishing assembly may include an electrode securing platen, a plurality of electrode locating fasteners, and an electrode. Each of the electrode locating fasteners may include an electrode spacing shoulder, a variance cancelling shoulder extending from the electrode spacing shoulder, a threaded platen clamping portion extending from the variance cancelling shoulder, and a threaded nut that engages the threaded platen clamping portion. The electrode locating fasteners clamp the electrode securing platen between the threaded nut and the electrode spacing shoulder. The variance cancelling shoulder is at least partially within one of a plurality of variance cancelling passages of the electrode securing platen. A minimum position stack-up is equal to a minimum passage size minus a maximum shoulder size. A maximum position stack-up is equal to a maximum passage size minus a minimum shoulder size. The maximum position stack-up is greater than the minimum position stack-up.
摘要翻译：在一个实施例中，电极抛光组件可以包括电极固定台板，多个电极定位紧固件和电极。每个电极定位紧固件可以包括电极间隔肩部，从电极间隔肩部延伸的变化抵消肩部，从变化抵消肩部延伸的螺纹压板夹紧部分以及与螺纹压板夹紧部分接合的螺纹螺母。电极定位紧固件将电极固定板夹紧在螺母和电极间隔肩之间。方差消除肩部至少部分在电极固定台板的多个方差消除通道中的一个之内。最小位置叠加等于最小通道尺寸减去最大肩部尺寸。最大位置叠加等于最大通道尺寸减去最小肩部尺寸。最大位置叠加大于最小位置叠加。

9. 发明申请

WO2010002722A3 BACKSIDE MOUNTED ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME 审中-公开
公开(公告)号：WO2010002722A3
公开(公告)日：2010-01-07
申请号：PCT/US2009/048794
申请日：2009-06-26
申请人： LAM RESEARCH CORPORATION , AUGUSTINO, Jason , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
发明人： AUGUSTINO, Jason , AVOYAN, Armen , FANG, Yan , OUTKA, Duane , SHIH, Hong , WHITTEN, Stephen
IPC分类号： H05H1/38 , H05H1/34 , H05H1/24
摘要： A carrier assembly is provided comprising a backside mounted electrode carrier and electrode mounting hardware. The backside mounted electrode carrier comprises an electrode accommodating aperture, which in turn comprises a sidewall structure that is configured to limit lateral movement of an electrode positioned in the aperture. The electrode accommodating aperture further comprises one or more sidewall projections that support the weight of an electrode positioned in the aperture. The electrode mounting hardware is configured to engage an electrode positioned in the electrode accommodating aperture from the backside of the carrier and urge the electrode against the sidewall projections so as to limit axial movement of the electrode in the electrode accommodating aperture. Additional embodiments of broader and narrower scope are contemplated.

10. 发明申请

WO2008121290A1 CLEANING OF BONDED SILICON ELECTRODES 审中-公开
标题翻译：粘结硅电极的清洁
公开(公告)号：WO2008121290A1
公开(公告)日：2008-10-09
申请号：PCT/US2008/003972
申请日：2008-03-27
申请人： LAM RESEARCH CORPORATION , OUTKA, Duane , AUGUSTINO, Jason , AVOYAN, Armen , WHITTEN, Stephen , SHIH, Hong , FANG, Yan
发明人： OUTKA, Duane , AUGUSTINO, Jason , AVOYAN, Armen , WHITTEN, Stephen , SHIH, Hong , FANG, Yan
IPC分类号： H01L21/306
CPC分类号： B08B3/04 , H01J37/32862
摘要： Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member.
摘要翻译：清洁等离子体处理室部件的方法包括将部件的表面与清洁溶液接触，同时避免清洁溶液损坏其它表面或部件区域。要清洁的示例性等离子体处理室部件是具有硅构件的弹性体接合电极组件，其具有等离子体暴露的硅表面，背衬构件和在硅表面和背衬构件之间的弹性体接合材料。

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