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81. 发明申请

US20180033565A1 MEMS SWITCH 审中-公开
公开(公告)号：US20180033565A1
公开(公告)日：2018-02-01
申请号：US15663628
申请日：2017-07-28
申请人： Analog Devices Global
发明人： Padraig Fitzgerald , Jo-ey Wong , Raymond C. Goggin , Bernard Patrick Stenson , Paul Lambkin , Mark Schirmer
IPC分类号： H01H1/00 , H01H59/00
CPC分类号： H01H1/0036 , H01H59/0009 , H01H2001/0084 , H01H2059/0018 , H01H2059/0072
摘要： Several features are disclosed that improve the operating performance of MEMS switches such that they exhibit improved in-service life and better control over switching on and off.

82. 发明申请

US20180016137A1 MEMS SWITCHES WITH REDUCED SWITCHING VOLTAGE AND METHODS OF MANUFACTURE 审中-公开
公开(公告)号：US20180016137A1
公开(公告)日：2018-01-18
申请号：US15717187
申请日：2017-09-27
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Stephen E. LUCE , Anthony K. STAMPER
IPC分类号： B81C1/00 , H01H49/00 , H01H59/00 , H01H11/00 , H01H1/58
CPC分类号： B81C1/00698 , B81C1/0015 , B81C1/00166 , B81C1/00523 , B81C2201/0132 , B81C2201/0133 , B81C2201/0145 , B81C2201/0154 , B81C2203/0145 , H01H1/0036 , H01H1/58 , H01H11/00 , H01H49/00 , H01H59/00 , H01H59/0009 , H01H2059/0018 , Y10T29/49105
摘要： An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode over a first fixed electrode, forming a second cantilevered electrode with an end that overlaps the first cantilevered electrode, forming a third cantilevered electrode operable to directly contact the first cantilevered electrode upon an application of a voltage to a second fixed electrode, and forming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode.

83. 发明申请

US20160145097A1 MEMS SWITCHES WITH REDUCED SWITCHING VOLTAGE AND METHODS OF MANUFACTURE 有权
公开(公告)号：US20160145097A1
公开(公告)日：2016-05-26
申请号：US15012314
申请日：2016-02-01
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Stephen E. LUCE , Anthony K. STAMPER
IPC分类号： B81C1/00
CPC分类号： B81C1/00698 , B81C1/0015 , B81C1/00166 , B81C1/00523 , B81C2201/0132 , B81C2201/0133 , B81C2201/0145 , B81C2201/0154 , B81C2203/0145 , H01H1/0036 , H01H1/58 , H01H11/00 , H01H49/00 , H01H59/00 , H01H59/0009 , H01H2059/0018 , Y10T29/49105
摘要： MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

84. 发明申请

US20150311003A1 MEMS Switch 有权
标题翻译： MEMS开关
公开(公告)号：US20150311003A1
公开(公告)日：2015-10-29
申请号：US14262188
申请日：2014-04-25
申请人： Analog Devices Global
发明人： Padraig L. Fitzgerald , Jo-ey Wong , Raymond C. Goggin , Bernard P. Stenson , Paul Lambkin , Mark Schirmer
IPC分类号： H01H1/00 , B81B3/00 , H01H59/00
CPC分类号： H01H1/0036 , H01H59/0009 , H01H2001/0084 , H01H2059/0018 , H01H2059/0072
摘要： Several features are disclosed that improve the operating performance of MEMS switches such that they exhibit improved in-service life and better control over switching on and off.
摘要翻译：公开了几个提高MEMS开关的操作性能的特征，使得它们表现出改善的使用寿命和对开关的更好控制。

85. 发明申请

US20150170911A1 SILICON SUBSTRATE SUITABLE FOR USE WITH AN RF COMPONENT, AND AN RF COMPONENT FORMED ON SUCH A SILICON SUBSTRATE 审中-公开
标题翻译：适用于RF组件的硅基板和在这种硅基板上形成的RF组件
公开(公告)号：US20150170911A1
公开(公告)日：2015-06-18
申请号：US14108035
申请日：2013-12-16
申请人： ANALOG DEVICES TECHNOLOGY
发明人： Paul Martin Lambkin , Padraig L. Fitzgerald , Bernard Patrick Stenson , Raymond C. Goggin , Seamus A. Lynch , William A. Lane
IPC分类号： H01L21/02
CPC分类号： H01L21/02524 , H01H59/0009 , H01H2059/0018 , H01L21/02002 , H01L21/02373 , H01L21/322
摘要： A silicon substrate is provided that may facilitate the formation of RF components more cheaply by using a silicon layer formed by the Czochralski process, and having a carrier life time killing layer deposited on the silicon layer.
摘要翻译：提供硅衬底，其可以通过使用由Czochralski工艺形成的硅层并且具有沉积在硅层上的载流子寿命消除层，更便宜地形成RF部件。

86. 发明授权

US08948706B2 Stiction reduction for MEMS devices 有权
标题翻译： MEMS器件的静态减少
公开(公告)号：US08948706B2
公开(公告)日：2015-02-03
申请号：US13706913
申请日：2012-12-06
申请人： Motorola Mobility LLC
发明人： Adrian Napoles , Vijay L. Asrani , Gregory R. Black
IPC分类号： H04B1/38 , H03K3/01 , B81C1/00 , H03H7/40 , H01H59/00 , H03H7/00 , H03H7/38
CPC分类号： H03K3/01 , B81C1/00976 , H01H2059/0018 , H01H2059/0063 , H03H7/40 , H03H2007/006 , H03H2007/008 , H03H2007/386
摘要： A capacitive micro-electromechanical switch (MEMS) integrated circuit (IC) comprises a plurality of capacitors, each having a voltage terminal for applying an actuation voltage to the individual capacitor, wherein each capacitor is capable of being individually cycled. The MEMS IC further includes: a high voltage driver having a voltage distribution mechanism that couples to the voltage terminal of each of the plurality of capacitors to enable the high voltage driver to selectively provide a pre-determined voltage input required to actuate and charge a selected one or more of the plurality of capacitors; and control logic communicatively coupled to the high voltage driver and which deterministically applies power cycle times (less than a stiction limit) for an actuation and de-actuation of at least a first capacitor of the plurality of capacitors to substantially reduce an occurrence of stiction within at least the first capacitor during operation of the MEMS device.
摘要翻译：电容微机电开关（MEMS）集成电路（IC）包括多个电容器，每个电容器具有用于向各个电容器施加致动电压的电压端子，其中每个电容器能够单独循环。 MEMS IC还包括：具有电压分配机构的高压驱动器，其耦合到多个电容器中的每一个的电压端子，以使得高电压驱动器能够选择性地提供所需的预定电压输入，以对所选择的电压进行充电和充电多个电容器中的一个或多个; 以及控制逻辑，其通信地耦合到所述高电压驱动器，并且确定性地施加用于所述多个电容器中的至少第一电容器的致动和解除驱动的功率周期时间（小于静态极限），以基本上减少所述多个电容器内的静电的发生至少在MEMS器件的操作期间的第一电容器。

87. 发明申请

US20120279837A1 METHOD FOR REDUCING SUBSTRATE CHARGING 有权
标题翻译：减少基板充电的方法
公开(公告)号：US20120279837A1
公开(公告)日：2012-11-08
申请号：US12415937
申请日：2009-03-31
申请人： Ingrid De Wolf , Xavier Rottenberg , Piotr Czarnecki , Philippe Soussan
发明人： Ingrid De Wolf , Xavier Rottenberg , Piotr Czarnecki , Philippe Soussan
IPC分类号： H01H57/00 , H01H49/00
CPC分类号： B81B3/0008 , B81B2201/016 , H01G5/16 , H01H59/0009 , H01H2059/0018
摘要： An electrostatically actuatable micro electromechanical device is provided with enhanced reliability and lifetime. The electrostatically actuatable micro electromechanical device comprises: a substrate, a first conductor fixed to the top layer of the substrate, forming a fixed electrode, a second conductor fixed to the top layer of the substrate, and a substrate area. The second conductor is electrically isolated from the first conductor and comprises a moveable portion, suspended at a predetermined distance above the first conductor, the moveable portion forming a moveable electrode which approaches the fixed electrode upon applying an actuation voltage between the first and second conductors. The selected substrate surface area is defined as the orthogonal projection of the moveable portion on the substrate between the first and second conductors. In the substrate surface area at least one recess is provided in at least the top layer of the substrate.
摘要翻译：提供了一种可静电驱动的微机电装置，具有更高的可靠性和寿命。静电致动微机电装置包括：基板，固定到基板的顶层的第一导体，形成固定电极，固定到基板的顶层的第二导体和基板区域。所述第二导体与所述第一导体电隔离并且包括悬挂在所述第一导体上方预定距离处的可移动部分，所述可移动部分形成在所述第一和第二导体之间施加致动电压时接近所述固定电极的可移动电极。所选择的基板表面积被定义为在第一和第二导体之间的基板上的可移动部分的正交投影。在基板表面区域中，至少一个凹部设置在基板的至少顶层中。

88. 发明授权

US08169770B2 Semiconductor integrated circuit including circuit for driving electrostatic actuator, micro-electro-mechanical systems, and driving method of electrostatic actuator 有权
标题翻译：半导体集成电路，包括用于驱动静电致动器的电路，微机电系统和静电致动器的驱动方法
公开(公告)号：US08169770B2
公开(公告)日：2012-05-01
申请号：US13011334
申请日：2011-01-21
申请人： Tamio Ikehashi , Hiroaki Yamazaki
发明人： Tamio Ikehashi , Hiroaki Yamazaki
IPC分类号： H01G5/00
CPC分类号： H01H59/0009 , H01H2001/0063 , H01H2059/0018 , H02N1/006
摘要： A semiconductor integrated circuit comprises an electrostatic actuator, an estimation circuit, a storage circuit and a bias circuit. The electrostatic actuator has a top electrode, a bottom electrode, and an insulating film disposed between the top electrode and the bottom electrode. The estimation circuit estimates the amount of a charge accumulated in the insulating film of the electrostatic actuator. The storage circuit stores a result of the estimation of the charge amount by the estimation circuit. The bias circuit changes, on the basis of the estimation result stored in the storage circuit, a drive voltage to drive the electrostatic actuator.
摘要翻译：半导体集成电路包括静电致动器，估计电路，存储电路和偏置电路。静电致动器具有顶部电极，底部电极和设置在顶部电极和底部电极之间的绝缘膜。估计电路估计在静电致动器的绝缘膜中累积的电荷的量。存储电路通过估计电路存储对电荷量的估计结果。偏置电路根据存储在存储电路中的估计结果，改变驱动静电致动器的驱动电压。

89. 发明申请

US20120048709A1 RF MEMS SWITCH WITH A GRATING AS MIDDLE ELECTRODE 有权
标题翻译： RF MEMS开关作为中间电极
公开(公告)号：US20120048709A1
公开(公告)日：2012-03-01
申请号：US13319034
申请日：2010-05-07
申请人： Peter Gerard Steeneken , Hilco Suy , Rodolf Herfst , Twan Van Lippen
发明人： Peter Gerard Steeneken , Hilco Suy , Rodolf Herfst , Twan Van Lippen
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , H01H2059/0018
摘要： The present invention provides a capacitive MEMS device comprising a first electrode lying in a plane, and a second electrode suspended above the first electrode and movable with respect to the first electrode. The first electrode functions as an actuation electrode. A gap is present between the first electrode and the second electrode. A third electrode is placed intermediate the first and second electrode with the gap between the third electrode and the second electrode. The third electrode has one or a plurality of holes therein, preferably in an orderly or irregular array. An aspect of the present invention integration of a conductive, e.g. metallic grating as a middle (or third) electrode. An advantage of the present invention is that it can reduce at least one problem of the prior art. This advantage allows an independent control over the pull-in and release voltage of a switch.
摘要翻译：本发明提供了一种电容MEMS器件，其包括位于平面中的第一电极和悬挂在第一电极上方并可相对于第一电极移动的第二电极。第一电极用作致动电极。在第一电极和第二电极之间存在间隙。第三电极被放置在第一和第二电极之间，第三电极和第二电极之间具有间隙。第三电极在其中具有一个或多个孔，优选为有序或不规则的阵列。本发明的一个方面是导电的，例如，金属光栅作为中间（或第三）电极。本发明的优点在于它可以减少至少一个现有技术的问题。这个优点允许独立控制开关的拉入和释放电压。

90. 发明授权

US07885051B2 Semiconductor integrated circuit including circuit for driving electrostatic actuator, micro-electro-mechanical systems, and driving method of electrostatic actuator 有权
标题翻译：半导体集成电路，包括用于驱动静电致动器的电路，微机电系统和静电致动器的驱动方法
公开(公告)号：US07885051B2
公开(公告)日：2011-02-08
申请号：US12797391
申请日：2010-06-09
申请人： Tamio Ikehashi , Hiroaki Yamazaki
发明人： Tamio Ikehashi , Hiroaki Yamazaki
IPC分类号： H01G5/01
CPC分类号： H01H59/0009 , H01H2001/0063 , H01H2059/0018 , H02N1/006
摘要： A semiconductor integrated circuit comprises an electrostatic actuator, an estimation circuit, a storage circuit and a bias circuit. The electrostatic actuator has a top electrode, a bottom electrode, and an insulating film disposed between the top electrode and the bottom electrode. The estimation circuit estimates the amount of a charge accumulated in the insulating film of the electrostatic actuator. The storage circuit stores a result of the estimation of the charge amount by the estimation circuit. The bias circuit changes, on the basis of the estimation result stored in the storage circuit, a drive voltage to drive the electrostatic actuator.
摘要翻译：半导体集成电路包括静电致动器，估计电路，存储电路和偏置电路。静电致动器具有顶部电极，底部电极和设置在顶部电极和底部电极之间的绝缘膜。估计电路估计在静电致动器的绝缘膜中累积的电荷的量。存储电路通过估计电路存储对电荷量的估计结果。偏置电路根据存储在存储电路中的估计结果，改变驱动静电致动器的驱动电压。

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