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    • 2. 发明申请
    • METHOD FOR REDUCING SUBSTRATE CHARGING
    • 减少基板充电的方法
    • US20120279837A1
    • 2012-11-08
    • US12415937
    • 2009-03-31
    • Ingrid De WolfXavier RottenbergPiotr CzarneckiPhilippe Soussan
    • Ingrid De WolfXavier RottenbergPiotr CzarneckiPhilippe Soussan
    • H01H57/00H01H49/00
    • B81B3/0008B81B2201/016H01G5/16H01H59/0009H01H2059/0018
    • An electrostatically actuatable micro electromechanical device is provided with enhanced reliability and lifetime. The electrostatically actuatable micro electromechanical device comprises: a substrate, a first conductor fixed to the top layer of the substrate, forming a fixed electrode, a second conductor fixed to the top layer of the substrate, and a substrate area. The second conductor is electrically isolated from the first conductor and comprises a moveable portion, suspended at a predetermined distance above the first conductor, the moveable portion forming a moveable electrode which approaches the fixed electrode upon applying an actuation voltage between the first and second conductors. The selected substrate surface area is defined as the orthogonal projection of the moveable portion on the substrate between the first and second conductors. In the substrate surface area at least one recess is provided in at least the top layer of the substrate.
    • 提供了一种可静电驱动的微机电装置,具有更高的可靠性和寿命。 静电致动微机电装置包括:基板,固定到基板的顶层的第一导体,形成固定电极,固定到基板的顶层的第二导体和基板区域。 所述第二导体与所述第一导体电隔离并且包括悬挂在所述第一导体上方预定距离处的可移动部分,所述可移动部分形成在所述第一和第二导体之间施加致动电压时接近所述固定电极的可移动电极。 所选择的基板表面积被定义为在第一和第二导体之间的基板上的可移动部分的正交投影。 在基板表面区域中,至少一个凹部设置在基板的至少顶层中。
    • 5. 发明申请
    • Methods for Embedding Conducting Material and Devices Resulting from Said Methods
    • 用于嵌入由所述方法产生的导电材料和装置的方法
    • US20120126391A1
    • 2012-05-24
    • US13292261
    • 2011-11-09
    • Alain PhommahaxayLieve BogaertsPhilippe Soussan
    • Alain PhommahaxayLieve BogaertsPhilippe Soussan
    • H01L23/04H01L21/52
    • B81C1/00896B81C2203/0109B81C2203/035
    • Disclosed are methods for forming semiconductor devices and the semiconductor devices thus obtained. In one embodiment, the method may include providing a semiconductor wafer comprising a surface, forming on the surface at least one device, forming a release layer at least in an area of the surface that encircles the at least one device, forming on the release layer at least one wall structure around the at least one device, and forming at least one cap on the at least one wall structure. In one embodiment, the device may include a substrate comprising a surface, at least one device formed on the surface, a release layer formed at least in an area of the surface that encircles the at least one device, at least one wall structure formed around the at least one device, and at least one removable cap formed on the at least one wall structure.
    • 公开了用于形成如此获得的半导体器件和半导体器件的方法。 在一个实施例中,该方法可以包括提供包括表面的半导体晶片,在表面上形成至少一个器件,在至少在包围至少一个器件的表面的区域中形成释放层,形成在释放层 围绕所述至少一个装置的至少一个壁结构,以及在所述至少一个壁结构上形成至少一个盖。 在一个实施例中,该装置可以包括一个包括一个表面的基底,至少一个在该表面上形成的装置,至少在该表面的区域中形成的剥离层,该释放层环绕该至少一个装置,至少一个壁结构 所述至少一个装置以及形成在所述至少一个壁结构上的至少一个可拆卸盖。
    • 8. 发明授权
    • Methods for embedding conducting material and devices resulting from said methods
    • 用于嵌入由所述方法产生的导电材料和装置的方法
    • US09061897B2
    • 2015-06-23
    • US13292261
    • 2011-11-09
    • Alain PhommahaxayLieve BogaertsPhilippe Soussan
    • Alain PhommahaxayLieve BogaertsPhilippe Soussan
    • H01L23/12B81C1/00
    • B81C1/00896B81C2203/0109B81C2203/035
    • Disclosed are methods for forming semiconductor devices and the semiconductor devices thus obtained. In one embodiment, the method may include providing a semiconductor wafer comprising a surface, forming on the surface at least one device, forming a release layer at least in an area of the surface that encircles the at least one device, forming on the release layer at least one wall structure around the at least one device, and forming at least one cap on the at least one wall structure. In one embodiment, the device may include a substrate comprising a surface, at least one device formed on the surface, a release layer formed at least in an area of the surface that encircles the at least one device, at least one wall structure formed around the at least one device, and at least one removable cap formed on the at least one wall structure.
    • 公开了用于形成如此获得的半导体器件和半导体器件的方法。 在一个实施例中,该方法可以包括提供包括表面的半导体晶片,在表面上形成至少一个器件,在至少在包围至少一个器件的表面的区域中形成释放层,形成在释放层上 围绕所述至少一个装置的至少一个壁结构,以及在所述至少一个壁结构上形成至少一个盖。 在一个实施例中,该装置可以包括一个包括一个表面的基底,至少一个在该表面上形成的装置,至少在该表面的区域中形成的剥离层,该释放层环绕该至少一个装置,至少一个壁结构 所述至少一个装置以及形成在所述至少一个壁结构上的至少一个可拆卸盖。