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81. 发明授权

US08422268B2 Current control element, memory element, and fabrication method thereof 有权
标题翻译：电流控制元件，存储元件及其制造方法
公开(公告)号：US08422268B2
公开(公告)日：2013-04-16
申请号：US12677413
申请日：2009-05-01
申请人： Koji Arita , Takumi Mikawa , Mitsuteru Iijima , Takashi Okada
发明人： Koji Arita , Takumi Mikawa , Mitsuteru Iijima , Takashi Okada
IPC分类号： G11C11/34 , G11C11/36 , H01L29/12
CPC分类号： H01L27/101 , H01L27/24 , H01L45/00
摘要： A memory element (3) arranged in matrix in a memory device and including a resistance variable element (1) which switches its electrical resistance value in response to a positive or negative electrical pulse applied thereto and retains the switched electrical resistance value; and a current control element (2) for controlling a current flowing when the electrical pulse is applied to the resistance variable element (1); wherein the current control element (2) includes a first electrode; a second electrode; and a current control layer sandwiched between the first electrode and the second electrode; and wherein the current control layer comprises SiNx, and at least one of the first electrode and the second electrode comprises α-tungsten.
摘要翻译：一种存储元件（3），其以矩阵形式布置在存储器件中，并且包括响应于施加到其上的正或负电脉冲而切换其电阻值的电阻可变元件（1），并保持所述开关电阻值; 以及电流控制元件（2），用于控制当电脉冲施加到电阻可变元件（1）时流动的电流; 其中所述电流控制元件（2）包括第一电极; 第二电极; 以及夹在所述第一电极和所述第二电极之间的电流控制层; 并且其中所述电流控制层包括SiN x，并且所述第一电极和所述第二电极中的至少一个包括α-钨。

82. 发明授权

US08384061B2 Nonvolatile memory device and manufacturing method 有权
标题翻译：非易失存储器件及其制造方法
公开(公告)号：US08384061B2
公开(公告)日：2013-02-26
申请号：US12745190
申请日：2008-11-06
申请人： Takumi Mikawa , Kenji Tominaga , Kazuhiko Shimakawa , Ryotaro Azuma
发明人： Takumi Mikawa , Kenji Tominaga , Kazuhiko Shimakawa , Ryotaro Azuma
IPC分类号： H01L27/26 , H01L29/8605 , H01L21/02
CPC分类号： H01L27/2409 , G11C13/0002 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1683
摘要： A nonvolatile memory device of the present invention includes a substrate (1), first wires (3), first resistance variable elements (5) and lower electrodes (6) of first diode elements which are filled in first through-holes (4), respectively, second wires (11) which cross the first wires 3 perpendicularly to the first wires 3, respectively, and each of which includes a semiconductor layer (7) of a first diode elements, a conductive layer (8) and a semiconductor layer (10) of a second diode elements which are stacked together in this order, second resistance variable elements (16) and upper electrodes (14) of second diode elements which are filled into second through holes (13), respectively, and third wires (17), and the conductive layer (8) of each second wires (11) also serves as the upper electrode of the first diode elements (9) and the lower electrode of the second diode elements (15).
摘要翻译：本发明的非易失性存储器件包括填充在第一通孔（4）中的基片（1），第一布线（3），第一电阻可变元件（5）和第一二极管元件的下电极（6）分别与第一布线3分别垂直于第一布线3交叉的第二布线（11），每条布线包括第一二极管元件的半导体层（7），导电层（8）和半导体层（ 10）分别被填充到第二通孔（13）中的第二电阻可变元件（16）和第二二极管元件的上电极（14）以及第三电线（17）），并且每个第二布线（11）的导电层（8）也用作第一二极管元件（9）的上电极和第二二极管元件（15）的下电极。

83. 发明申请

US20130037777A1 NON-VOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：非挥发性储存装置及其制造方法
公开(公告)号：US20130037777A1
公开(公告)日：2013-02-14
申请号：US13641491
申请日：2011-04-21
申请人： Takumi Mikawa , Haruyuki Sorada
发明人： Takumi Mikawa , Haruyuki Sorada
IPC分类号： H01L45/00 , H01L21/8239
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/51 , H01L21/76807 , H01L21/76849 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1683
摘要： A variable resistance non-volatile storage device includes: a first line which includes a barrier metal layer and a main layer, and fills an inside of a line trench formed in a first interlayer insulating layer; a first electrode covering a top surface of the first line and comprising a precious metal; memory cell holes formed in a second interlayer insulating layer; a variable resistance layer formed in the memory cell holes and connected to the first electrode; and second lines covering the variable resistance layer and the memory cell holes, wherein in an area near the memory cell holes, the main layer is covered with the barrier metal layer and the first electrode in an arbitrary widthwise cross section of the first line.
摘要翻译：可变电阻非易失性存储装置包括：第一线，其包括阻挡金属层和主层，并填充形成在第一层间绝缘层中的线沟槽的内部; 覆盖第一线的顶表面并包含贵金属的第一电极; 在第二层间绝缘层中形成的存储单元孔; 形成在所述存储单元孔中并连接到所述第一电极的可变电阻层; 以及覆盖可变电阻层和存储单元孔的第二线，其中在存储单元孔附近的区域中，主层被第一线的任意宽度横截面中的阻挡金属层和第一电极覆盖。

84. 发明申请

US20120295413A1 METHOD OF MANUFACTURING NON-VOLATILE SEMICONDUCTOR MEMORY ELEMENT AND METHOD OF MANUFACTURING NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：制造非易失性半导体存储器元件的方法和制造非易失性半导体存储器件的方法
公开(公告)号：US20120295413A1
公开(公告)日：2012-11-22
申请号：US13574254
申请日：2010-12-28
申请人： Satoru Fujii , Takumi Mikawa
发明人： Satoru Fujii , Takumi Mikawa
IPC分类号： H01L21/02
CPC分类号： H01L27/2463 , H01L27/101 , H01L27/2409 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/16 , H01L45/1616 , H01L45/1625
摘要： A method of manufacturing a non-volatile semiconductor memory element including a variable resistance element and a non-ohmic element. The variable resistance element includes a first electrode, a variable resistance layer, and a shared electrode. The non-ohmic element includes the shared electrode, a semiconductor or insulator layer, and a second electrode. The method includes: forming the first electrode on a substrate; forming the variable resistance layer on the first electrode; forming the shared electrode by nitriding a front surface of the variable resistance layer; forming the semiconductor or insulator layer on the shared electrode; and forming the second electrode. In the forming of the shared electrode, a front surface of a transition metal oxide is nitrided by a plasma nitriding process to form the shared electrode comprising a transition metal nitride.
摘要翻译：一种制造包括可变电阻元件和非欧姆元件的非易失性半导体存储元件的方法。可变电阻元件包括第一电极，可变电阻层和共用电极。非欧姆元件包括共用电极，半导体或绝缘体层和第二电极。该方法包括：在基板上形成第一电极; 在所述第一电极上形成所述可变电阻层; 通过对可变电阻层的前表面进行氮化而形成共用电极; 在共用电极上形成半导体层或绝缘体层; 并形成第二电极。在共用电极的形成中，通过等离子体氮化处理使过渡金属氧化物的前表面氮化，形成包含过渡金属氮化物的共用电极。

85. 发明申请

US20120292589A1 NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储元件和制造非易失性存储元件的方法
公开(公告)号：US20120292589A1
公开(公告)日：2012-11-22
申请号：US13575338
申请日：2011-12-12
申请人： Shinichi Yoneda , Takumi Mikawa
发明人： Shinichi Yoneda , Takumi Mikawa
IPC分类号： H01L45/00 , H01L21/66 , H01L21/8239
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/72 , H01L45/1233
摘要： A nonvolatile memory element according to the present disclosure includes: a variable resistance element including a first electrode layer, a second electrode layer, and a variable resistance layer which is located between the first electrode layer and the second electrode layer and has a resistance value that reversibly changes based on an electrical signal applied between the first electrode layer and the second electrode layer; and a fixed resistance layer having a predetermined resistance value and stacked together with the variable resistance element. The variable resistance layer includes (i) a first transition metal oxide layer which is oxygen deficient and (ii) a second transition metal oxide layer which has a higher oxygen content atomic percentage than the first transition metal oxide layer. The predetermined resistance value ranges from 70Ω to 1000Ω inclusive.
摘要翻译：根据本公开的非易失性存储元件包括：可变电阻元件，包括位于第一电极层和第二电极层之间的第一电极层，第二电极层和可变电阻层，并且具有电阻值，基于施加在第一电极层和第二电极层之间的电信号可逆地改变; 以及具有预定电阻值并与可变电阻元件一起堆叠的固定电阻层。可变电阻层包括（i）缺氧的第一过渡金属氧化物层和（ii）具有比第一过渡金属氧化物层更高的氧含量原子百分比的第二过渡金属氧化物层。预定电阻值范围为70＆OHgr; 至1000＆OHgr; 包括的。

86. 发明授权

US08242479B2 Nonvolatile memory apparatus and manufacturing method thereof 有权
标题翻译：非易失性存储装置及其制造方法
公开(公告)号：US08242479B2
公开(公告)日：2012-08-14
申请号：US12742841
申请日：2008-11-14
申请人： Yoshio Kawashima , Takumi Mikawa , Ryoko Miyanaga , Takeshi Takagi
发明人： Yoshio Kawashima , Takumi Mikawa , Ryoko Miyanaga , Takeshi Takagi
IPC分类号： H01L29/02
CPC分类号： H01L27/101 , G11C13/0002 , G11C2213/72 , H01L27/24
摘要： A nonvolatile memory device includes via holes (12) formed at cross sections where first wires (11) cross second wires (14), respectively, and current control elements (13) each including a current control layer (13b), a first electrode layer (13a) and a second electrode layer (13c) such that the current control layer (13b) is sandwiched between the first electrode layer (13a) and the second electrode layer (13c), in which resistance variable elements (15) are provided inside the via holes (12), respectively, the first electrode layer (13a) is disposed so as to cover the via hole (12), the current control layer (13b) is disposed so as to cover the first electrode layer (13a), the second electrode layer (13c) is disposed on the current control layer (13b), a wire layer (14a) of the second wire is disposed on the second electrode layer (13c), and the second wires (14) each includes the current control layer (13b), the second electrode layer (13c) and the wire layer (14a) of the second wire.
摘要翻译：非易失性存储器件包括分别形成在第一布线（11）与第二布线（14）交叉的横截面处的通孔（12），以及各自包括电流控制层（13b）的电流控制元件（13），第一电极层（13a）和第二电极层（13c），使得电流控制层（13b）夹在第一电极层（13a）和第二电极层（13c）之间，其中电阻可变元件（15）设置在其内通孔（12）分别设置成覆盖通孔（12），电流控制层（13b）被设置成覆盖第一电极层（13a），第二电极层（13c）设置在电流控制层（13b）上，第二导线的导线层（14a）设置在第二电极层（13c）上，第二导线（14）各自包括电流控制层（13b），第二电极层（13c）和第二wi的导线层（14a）回覆。

87. 发明申请

US20120069632A1 CURRENT CONTROL, MEMORY ELEMENT, MEMORY DEVICE, AND PRODUCTION METHOD FOR CURRENT CONTROL ELEMENT 有权
标题翻译：电流控制，存储元件，存储器件和电流控制元件的生产方法
公开(公告)号：US20120069632A1
公开(公告)日：2012-03-22
申请号：US13321018
申请日：2011-03-10
申请人： Yukio Hayakawa , Koji Arita , Takumi Mikawa , Takeki Ninomiya
发明人： Yukio Hayakawa , Koji Arita , Takumi Mikawa , Takeki Ninomiya
IPC分类号： G11C11/00 , H01L21/66 , H01L47/00
CPC分类号： H01L27/2409 , H01L45/146
摘要： Provided is a current steering element that can prevent write didturb even when an electrical pulse with different polarities is applied and that can cause a large current to flow through a variable resistance element. The current steering element includes a first electrode (32), a second electrode (31), and a current steering layer (33). The current steering layer (33) comprises SiNx (where 0
摘要翻译：提供了即使当施加具有不同极性的电脉冲并且可能导致大电流流过可变电阻元件时也能够防止写入干扰的电流导向元件。当前的转向元件包括第一电极（32），第二电极（31）和电流转向层（33）。当前的转向层（33）包括添加有氢或氟的SiNx（其中0

88. 发明申请

US20110284816A1 NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, NONVOLATILE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储器元件，非易失性存储器件，非易失性半导体器件以及制造非易失性存储器元件的方法
公开(公告)号：US20110284816A1
公开(公告)日：2011-11-24
申请号：US13147321
申请日：2010-02-02
申请人： Satoru Fujii , Koji Arita , Satoru Mitani , Takumi Mikawa
发明人： Satoru Fujii , Koji Arita , Satoru Mitani , Takumi Mikawa
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1273
摘要： A nonvolatile memory element comprises a first electrode (103); a second electrode (105); and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), resistance values of the resistance variable layer reversibly changing in response to electric signals applied between the electrodes (103, 105); the resistance variable layer (104) including a first tantalum oxide layer (107) comprising a first tantalum oxide and a second tantalum oxide layer (108) comprising a second tantalum oxide which is different in oxygen content from the first tantalum oxide, the first tantalum oxide layer and the second tantalum oxide layer being stacked together, and being configured such that 0
摘要翻译：非易失性存储元件包括第一电极（103）; 第二电极（105）; 以及设置在所述第一电极（103）和所述第二电极（105）之间的电阻变化层（104），所述电阻变化层的电阻值响应于施加在所述电极（103,105）之间的电信号而可逆地变化; 电阻变化层（104）包括包含第一钽氧化物的第一钽氧化物层（107）和包含与第一钽氧化物不同氧含量的第二氧化钽的第二钽氧化物层（108），第一钽氧化物层和第二钽氧化物层堆叠在一起，并且被配置为当第一钽氧化物表示为TaO x并且x

89. 发明申请

US20110233511A1 NONVOLATILE MEMORY ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：非易失性存储元件及其制造方法
公开(公告)号：US20110233511A1
公开(公告)日：2011-09-29
申请号：US13132822
申请日：2009-12-04
申请人： Yoshio Kawashima , Takumi Mikawa , Zhiqiang Wei , Atsushi Himeno
发明人： Yoshio Kawashima , Takumi Mikawa , Zhiqiang Wei , Atsushi Himeno
IPC分类号： H01L47/00 , H01L21/02
CPC分类号： H01L27/0688 , H01L27/101 , H01L27/2409 , H01L27/2418 , H01L27/2436 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1608
摘要： A nonvolatile memory element (10) of the present invention comprises a substrate (11); a lower electrode layer (15) and a resistive layer (16) sequentially formed on the substrate (11); a resistance variable layer (31) formed on the resistive layer (16); a wire layer (20) formed above the lower electrode layer (15); an interlayer insulating layer (17) disposed between the substrate (11) and the wire layer (20) and covering at least the lower electrode layer (15) and the resistive layer (16), the interlayer insulating layer being provided with a contact hole (26) extending from the wire layer (20) to the resistance variable layer (31); and an upper electrode layer (19) formed inside the contact hole (26) such that the upper electrode layer is connected to the resistance variable layer (31) and to the wire layer (20); resistance values of the resistance variable layer (31) changing reversibly in response to electric pulses applied between the lower electrode layer (15) and the upper electrode layer (19).
摘要翻译：本发明的非易失性存储元件（10）包括衬底（11）; 依次形成在所述基板（11）上的下电极层（15）和电阻层（16）。形成在电阻层（16）上的电阻变化层（31）; 在所述下电极层（15）的上方形成的导线层（20）。设置在所述基板（11）和所述导线层（20）之间并且至少覆盖所述下电极层（15）和所述电阻层（16）的层间绝缘层（17），所述层间绝缘层设置有接触孔（26）从所述导线层（20）延伸到所述电阻变化层（31）; 以及形成在所述接触孔（26）内部的上电极层（19），使得所述上电极层连接到所述电阻变化层（31）和所述导线层（20）; 电阻变化层（31）的电阻值响应于施加在下电极层（15）和上电极层（19）之间的电脉冲而可逆地变化。

90. 发明申请

US20110164447A1 CURRENT STEERING ELEMENT, STORAGE ELEMENT, STORAGE DEVICE, AND METHOD FOR MANUFACTURING CURRENT STEERING ELEMENT 有权
标题翻译：电流转向元件，存储元件，存储器件和制造电流转向元件的方法
公开(公告)号：US20110164447A1
公开(公告)日：2011-07-07
申请号：US13061312
申请日：2009-09-17
申请人： Koji Arita , Takumi Mikawa , Mitsuteru Iijima , Kenji Tominaga
发明人： Koji Arita , Takumi Mikawa , Mitsuteru Iijima , Kenji Tominaga
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2013/0078 , G11C2213/15 , G11C2213/51 , G11C2213/56 , G11C2213/76 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A current steering element which can prevent occurrence of write disturb even when electric pulses having different polarities are applied and can cause large current to flow through a variable resistance element, and with which data can be written without problem. In a storage element (3) including: a variable resistance element (1) whose electric resistance value changes in response to application of electric pulses having a positive polarity and a negative polarity and which maintains the changed electric resistance value; and the current steering element (2) that steers current flowing through the variable resistance element (1) when the electric pulses are applied, the current steering element (2) includes: a first electrode (32); a second electrode (31); and a current steering layer (33) interposed between the first electrode (32) and the second electrode (31). When the current steering layer (33) includes SiNx (0
摘要翻译：即使施加具有不同极性的电脉冲也能够防止写入干扰的发生，并且可能导致大的电流流过可变电阻元件并且可以无限制地写入数据的电流导向元件。在一种存储元件（3）中，包括：可变电阻元件（1），其电阻值响应于具有正极性和负极性的电脉冲的应用而改变并且保持改变的电阻值; 以及当施加电脉冲时转向流过可变电阻元件（1）的电流的当前操舵元件（2），所述电流操舵元件（2）包括：第一电极（32）; 第二电极（31）; 和介于所述第一电极（32）和所述第二电极（31）之间的电流转向层（33）。当电流导向层（33）包括SiNx（0

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