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1. 发明申请

US20140197368A1 NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY ELEMENT MANUFACTURING METHOD, AND NONVOLATILE MEMORY DEVICE MANUFACTURING METHOD 有权
标题翻译：非易失性存储器元件，非易失性存储器件，非易失性存储元件制造方法和非易失性存储器件制造方法
公开(公告)号：US20140197368A1
公开(公告)日：2014-07-17
申请号：US14343441
申请日：2012-09-10
申请人： Shinichi Yoneda , Takumi Mikawa , Satoru Ito , Yukio Hayakawa , Atsushi Himeno
发明人： Shinichi Yoneda , Takumi Mikawa , Satoru Ito , Yukio Hayakawa , Atsushi Himeno
IPC分类号： H01L45/00
CPC分类号： H01L45/124 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/145 , H01L45/146 , H01L45/1608 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second electrode; and a side wall protecting layer that has oxygen barrier properties and covers a side surface of the variable resistance layer. The first variable resistance layer includes a first metal oxide and a third metal oxide formed around the first metal oxide and having an oxygen deficiency lower than that of the first metal oxide, and the second variable resistance layer includes a second metal oxide having an oxygen deficiency lower than that of the first metal oxide.
摘要翻译：一种非易失性存储元件，包括：第一电极; 第二电极; 在第一电极和第二电极之间的可变电阻层，并且包括作为堆叠层的连接到第一电极的第一可变电阻层和连接到第二电极的第二可变电阻层; 以及具有阻氧性并覆盖可变电阻层的侧面的侧壁保护层。第一可变电阻层包括形成在第一金属氧化物周围的第一金属氧化物和第三金属氧化物，其氧缺陷低于第一金属氧化物，第二可变电阻层包括具有氧缺乏的第二金属氧化物低于第一金属氧化物。

2. 发明授权

US09184381B2 Nonvolatile storage element and method for manufacturing same 有权
标题翻译：非易失性存储元件及其制造方法
公开(公告)号：US09184381B2
公开(公告)日：2015-11-10
申请号：US13810800
申请日：2011-10-06
申请人： Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima , Shinichi Yoneda
发明人： Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima , Shinichi Yoneda
IPC分类号： H01L47/00 , H01L45/00 , H01L27/10
CPC分类号： H01L45/145 , H01L27/101 , H01L45/08 , H01L45/146 , H01L45/1608 , H01L45/1625
摘要： A variable resistance nonvolatile storage element includes: a first electrode; a second electrode; and a variable resistance layer having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer, a second transition metal oxide layer, and a third transition metal oxide layer in this order, the first transition metal oxide layer having a composition expressed as MOx (where M is a transition metal and O is oxygen), the second transition metal oxide layer having a composition expressed as MOy (where x>y), and the third transition metal oxide layer having a composition expressed as MOz (where y>z).
摘要翻译：可变电阻非易失性存储元件包括：第一电极; 第二电极; 以及可变电阻层，其具有基于施加在所述电极之间的电信号而可逆地变化的电阻值，其中所述可变电阻层具有通过堆叠第一过渡金属氧化物层，第二过渡金属氧化物层和第三过渡金属氧化物层而形成的结构过渡金属氧化物层，第一过渡金属氧化物层具有以MOx表示的组成（其中M是过渡金属，O是氧），第二过渡金属氧化物层具有以MOy表示的组成（其中x> y ）和具有表示为MOz（其中y> z）的组成的第三过渡金属氧化物层。

3. 发明授权

US08692222B2 Nonvolatile memory element and method of manufacturing the nonvolatile memory element 有权
标题翻译：非易失性存储元件和制造非易失性存储元件的方法
公开(公告)号：US08692222B2
公开(公告)日：2014-04-08
申请号：US13575338
申请日：2011-12-12
申请人： Shinichi Yoneda , Takumi Mikawa
发明人： Shinichi Yoneda , Takumi Mikawa
IPC分类号： H01L47/00
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/72 , H01L45/1233
摘要： A nonvolatile memory element according to the present disclosure includes: a variable resistance element including a first electrode layer, a second electrode layer, and a variable resistance layer which is located between the first electrode layer and the second electrode layer and has a resistance value that reversibly changes based on an electrical signal applied between the first electrode layer and the second electrode layer; and a fixed resistance layer having a predetermined resistance value and stacked together with the variable resistance element. The variable resistance layer includes (i) a first transition metal oxide layer which is oxygen deficient and (ii) a second transition metal oxide layer which has a higher oxygen content atomic percentage than the first transition metal oxide layer. The predetermined resistance value ranges from 70Ω to 1000Ω inclusive.
摘要翻译：根据本公开的非易失性存储元件包括：可变电阻元件，包括位于第一电极层和第二电极层之间的第一电极层，第二电极层和可变电阻层，并且具有电阻值，基于施加在第一电极层和第二电极层之间的电信号可逆地改变; 以及具有预定电阻值并与可变电阻元件一起堆叠的固定电阻层。可变电阻层包括（i）缺氧的第一过渡金属氧化物层和（ii）具有比第一过渡金属氧化物层更高的氧含量原子百分比的第二过渡金属氧化物层。预定电阻值范围为70＆OHgr; 至1000＆OHgr; 包括的。

4. 发明授权

US09680093B2 Nonvolatile memory element, nonvolatile memory device, nonvolatile memory element manufacturing method, and nonvolatile memory device manufacturing method 有权
公开(公告)号：US09680093B2
公开(公告)日：2017-06-13
申请号：US14343441
申请日：2012-09-10
申请人： Shinichi Yoneda , Takumi Mikawa , Satoru Ito , Yukio Hayakawa , Atsushi Himeno
发明人： Shinichi Yoneda , Takumi Mikawa , Satoru Ito , Yukio Hayakawa , Atsushi Himeno
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/124 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/145 , H01L45/146 , H01L45/1608 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second electrode; and a side wall protecting layer that has oxygen barrier properties and covers a side surface of the variable resistance layer. The first variable resistance layer includes a first metal oxide and a third metal oxide formed around the first metal oxide and having an oxygen deficiency lower than that of the first metal oxide, and the second variable resistance layer includes a second metal oxide having an oxygen deficiency lower than that of the first metal oxide.

5. 发明申请

US20130119344A1 NONVOLATILE STORAGE ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：非易失存储元件及其制造方法
公开(公告)号：US20130119344A1
公开(公告)日：2013-05-16
申请号：US13810800
申请日：2011-10-06
申请人： Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima , Shinichi Yoneda
发明人： Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima , Shinichi Yoneda
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , H01L27/101 , H01L45/08 , H01L45/146 , H01L45/1608 , H01L45/1625
摘要： A variable resistance nonvolatile storage element includes: a first electrode; a second electrode; and a variable resistance layer having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer, a second transition metal oxide layer, and a third transition metal oxide layer in this order, the first transition metal oxide layer having a composition expressed as MOx (where M is a transition metal and O is oxygen), the second transition metal oxide layer having a composition expressed as MOy (where x>y), and the third transition metal oxide layer having a composition expressed as MOz (where y>z).
摘要翻译：可变电阻非易失性存储元件包括：第一电极; 第二电极; 以及可变电阻层，其具有基于施加在所述电极之间的电信号而可逆地变化的电阻值，其中所述可变电阻层具有通过堆叠第一过渡金属氧化物层，第二过渡金属氧化物层和第三过渡金属氧化物层而形成的结构过渡金属氧化物层，第一过渡金属氧化物层具有以MOx表示的组成（其中M是过渡金属，O是氧），第二过渡金属氧化物层具有以MOy表示的组成（其中x> y ）和具有表示为MOz（其中y> z）的组成的第三过渡金属氧化物层。

6. 发明申请

US20120292589A1 NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储元件和制造非易失性存储元件的方法
公开(公告)号：US20120292589A1
公开(公告)日：2012-11-22
申请号：US13575338
申请日：2011-12-12
申请人： Shinichi Yoneda , Takumi Mikawa
发明人： Shinichi Yoneda , Takumi Mikawa
IPC分类号： H01L45/00 , H01L21/66 , H01L21/8239
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/72 , H01L45/1233
摘要： A nonvolatile memory element according to the present disclosure includes: a variable resistance element including a first electrode layer, a second electrode layer, and a variable resistance layer which is located between the first electrode layer and the second electrode layer and has a resistance value that reversibly changes based on an electrical signal applied between the first electrode layer and the second electrode layer; and a fixed resistance layer having a predetermined resistance value and stacked together with the variable resistance element. The variable resistance layer includes (i) a first transition metal oxide layer which is oxygen deficient and (ii) a second transition metal oxide layer which has a higher oxygen content atomic percentage than the first transition metal oxide layer. The predetermined resistance value ranges from 70Ω to 1000Ω inclusive.
摘要翻译：根据本公开的非易失性存储元件包括：可变电阻元件，包括位于第一电极层和第二电极层之间的第一电极层，第二电极层和可变电阻层，并且具有电阻值，基于施加在第一电极层和第二电极层之间的电信号可逆地改变; 以及具有预定电阻值并与可变电阻元件一起堆叠的固定电阻层。可变电阻层包括（i）缺氧的第一过渡金属氧化物层和（ii）具有比第一过渡金属氧化物层更高的氧含量原子百分比的第二过渡金属氧化物层。预定电阻值范围为70＆OHgr; 至1000＆OHgr; 包括的。

7. 发明申请

US20140021429A1 NONVOLATILE MEMORY ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：非易失性存储元件及其制造方法
公开(公告)号：US20140021429A1
公开(公告)日：2014-01-23
申请号：US14006424
申请日：2013-01-18
申请人： Satoru Ito , Satoru Fujii , Shinichi Yoneda , Takumi Mikawa
发明人： Satoru Ito , Satoru Fujii , Shinichi Yoneda , Takumi Mikawa
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C2213/32 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641
摘要： A nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer positioned between the first electrode and the second electrode. The variable resistance layer has a resistance state which reversibly changes based on an electrical signal applied between the first electrode and the second electrode. The variable resistance layer includes a first variable resistance layer having a first metal oxide and a second variable resistance layer having a second metal oxide. The second variable resistance layer includes a metal-metal bonding region including a metal bond of metal atoms included in the second metal oxide, and the second metal oxide has a low degree of oxygen deficiency and a high resistance value compared to the first metal oxide.
摘要翻译：非易失性存储元件包括位于第一电极和第二电极之间的第一电极，第二电极和可变电阻层。可变电阻层具有基于施加在第一电极和第二电极之间的电信号而可逆地改变的电阻状态。可变电阻层包括具有第一金属氧化物的第一可变电阻层和具有第二金属氧化物的第二可变电阻层。第二可变电阻层包括与第一金属氧化物相比具有包括在第二金属氧化物中的包含金属原子的金属键的金属 - 金属结合区域，并且第二金属氧化物具有低的氧缺乏程度和高的电阻值。

8. 发明申请

US20120326113A1 NON-VOLATILE MEMORY ELEMENT AND NON-VOLATILE MEMORY DEVICE EQUIPPED WITH SAME 审中-公开
标题翻译：非易失性存储器元件和非易失性存储器件
公开(公告)号：US20120326113A1
公开(公告)日：2012-12-27
申请号：US13582370
申请日：2011-06-09
申请人： Shinichi Yoneda , Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya
发明人： Shinichi Yoneda , Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1625
摘要： Provided are a non-volatile memory element which can reduce a voltage of an electric pulse required for initial breakdown, and can lessen non-uniformity of a resistance value of the non-volatile memory element, and a non-volatile memory device including the non-volatile memory element. A non-volatile memory element comprises a first electrode (103); a second electrode (105); and a variable resistance layer (104) interposed between the first electrode (103) and the second electrode (105), a resistance value of the variable resistance layer being changeable reversibly in response to an electric signal applied between the first electrode (103) and the second electrode (105); wherein the variable resistance layer (104) includes a first region (106) which is in contact with the first electrode (103) and comprises an oxygen-deficient transition metal oxide and a second region (107) which is in contact with the second electrode (105) and comprises a transition metal oxide having a smaller degree of oxygen deficiency than the first region (106); and wherein the second electrode (105) comprises an alloy including iridium and at least one precious metal having lower Young's modulus than iridium, and a content of iridium is not less than 50 atm %.
摘要翻译：提供了一种非易失性存储元件，其可以降低初始击穿所需的电脉冲的电压，并且可以减小非易失性存储元件的电阻值的不均匀性，以及包括非易失性存储元件的非易失性存储器件，非易失存储元件。非易失性存储元件包括第一电极（103）; 第二电极（105）; 以及插入在第一电极（103）和第二电极（105）之间的可变电阻层（104），可变电阻层的电阻值响应于施加在第一电极（103）和第二电极（105）; 其特征在于，所述可变电阻层（104）包括与所述第一电极（103）接触并且包含缺氧过渡金属氧化物的第一区域（106）和与所述第二电极（103）接触的第二区域（105），并且包含与第一区域（106）相比氧缺乏程度较小的过渡金属氧化物; 并且其中所述第二电极（105）包括包含铱和至少一种具有比铱低的杨氏模量的贵金属的合金，并且铱的含量不小于50atm％。

9. 发明授权

US09252189B2 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory device, and method for manufacturing nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储元件，非易失性半导体存储器件以及用于制造非易失性半导体存储器件的方法
公开(公告)号：US09252189B2
公开(公告)日：2016-02-02
申请号：US13996203
申请日：2012-06-18
申请人： Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
发明人： Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
IPC分类号： H01L27/24 , H01L45/00 , H01L29/66 , H01L29/872 , H01L27/22
CPC分类号： H01L27/2409 , H01L27/228 , H01L27/2436 , H01L27/2463 , H01L29/66143 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile semiconductor memory element includes: a variable resistance element including a first electrode, a variable resistance layer, and a second electrode, and having a resistance value which changes according to a polarity of an electric pulse applied between the first electrode and the second electrode; and a current steering element which is electrically connected to the variable resistance element, allows a current to flow bidirectionally, and has a nonlinear current-voltage characteristic. The current steering element (i) has a structure in which a first current steering element electrode, a first current steering layer, and a second current steering element electrode are stacked in this order, and (ii) includes a second current steering layer which covers side surfaces of the first current steering element electrode, the first current steering layer, and the second current steering element electrode.
摘要翻译：非易失性半导体存储元件包括：可变电阻元件，包括第一电极，可变电阻层和第二电极，并且具有根据施加在第一电极和第二电极之间的电脉冲的极性而变化的电阻值 ; 并且电连接到可变电阻元件的电流导向元件允许电流双向流动，并且具有非线性电流 - 电压特性。当前的操舵元件（i）具有第一电流导向元件电极，第一电流导向层和第二电流操舵元件电极按此顺序堆叠的结构，（ⅱ）包括覆盖第一电流操舵元件电极，第一电流导向层和第二电流导向元件电极的侧面。

10. 发明授权

US09000506B2 Variable resistance nonvolatile memory element and method for manufacturing the same 有权
标题翻译：可变电阻非易失性存储元件及其制造方法
公开(公告)号：US09000506B2
公开(公告)日：2015-04-07
申请号：US13501624
申请日：2011-11-18
申请人： Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
发明人： Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
IPC分类号： H01L27/108 , H01L45/00 , H01L27/24
CPC分类号： H01L45/146 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1675
摘要： A nonvolatile memory element which inhibits deterioration of an oxygen concentration profile of a variable resistance layer due to a thermal budget and is able to stably operate at low voltages, and a method for manufacturing the nonvolatile memory element are provided. The nonvolatile memory element includes a first electrode layer formed above a substrate, a variable resistance layer disposed on the first electrode layer, and a second electrode layer disposed on the variable resistance layer, and the variable resistance layer has a two-layer structure in which an oxygen- and/or nitrogen-deficient tantalum oxynitride layer and a tantalum oxide layer are stacked.
摘要翻译：提供一种非易失性存储元件，其抑制由于热预算导致的可变电阻层的氧浓度分布的劣化，并能够在低电压下稳定地工作，并且提供了一种制造非易失性存储元件的方法。非易失性存储元件包括形成在基板上的第一电极层，设置在第一电极层上的可变电阻层和设置在可变电阻层上的第二电极层，可变电阻层具有两层结构，其中氧和/或氮缺乏的氮氧化钽层和氧化钽层被堆叠。

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