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1. 发明申请

US20130112936A1 RESISTANCE CHANGE ELEMENT AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：电阻变化元件及其制造方法
公开(公告)号：US20130112936A1
公开(公告)日：2013-05-09
申请号：US13810708
申请日：2012-01-18
申请人： Zhiqiang WEI , Takeshi Takagi , Satoru Mitani , Yoshio Kawashima , Ichirou Takahashi
发明人： Zhiqiang WEI , Takeshi Takagi , Satoru Mitani , Yoshio Kawashima , Ichirou Takahashi
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L45/08 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： A variable resistance element including: a first electrode; a second electrode; and a variable resistance layer having a resistance value which reversibly changes according to electrical signals applied, wherein the variable resistance layer includes a first variable resistance layer comprising a first oxygen-deficient transition metal oxide, and a second variable resistance layer comprising a second transition metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first transition metal oxide layer, the second electrode has a single needle-shaped part at the interface with the second variable resistance layer, and the second variable resistance layer is interposed between the first variable resistance layer and the second electrode, is in contact with the first variable resistance layer and the second electrode, and covers the needle-shaped part.
摘要翻译：一种可变电阻元件，包括：第一电极; 第二电极; 以及可变电阻层，其具有根据施加的电信号可逆地改变的电阻值，其中所述可变电阻层包括包含第一氧缺乏过渡金属氧化物的第一可变电阻层和包含第二过渡金属的第二可变电阻层具有低于第一过渡金属氧化物层的氧缺乏程度的氧缺乏的氧化物，第二电极在与第二可变电阻层的界面处具有单个针状部分，并且插入第二可变电阻层在第一可变电阻层和第二电极之间，与第一可变电阻层和第二电极接触并覆盖针状部分。

2. 发明申请

US20120327702A1 NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储元件和非易失性存储器件
公开(公告)号：US20120327702A1
公开(公告)日：2012-12-27
申请号：US13599286
申请日：2012-08-30
申请人： Takeshi Takagi , Zhiqiang Wei , Takeki Ninomiya , Shunsaku Muraoka , Yoshihiko Kanzawa
发明人： Takeshi Takagi , Zhiqiang Wei , Takeki Ninomiya , Shunsaku Muraoka , Yoshihiko Kanzawa
IPC分类号： H01L45/00 , G11C11/21
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2213/31 , G11C2213/32 , G11C2213/56 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile memory element includes: a first electrode layer; a second electrode layer; and a variable resistance layer which is placed between the electrode layers, and whose resistance state reversibly changes between a high resistance state and a low resistance state based on a polarity of a voltage applied between the electrode layers. The variable resistance layer is formed by stacking a first oxide layer including an oxide of a first transition metal and a second oxide layer including an oxide of a second transition metal which is different from the first transition metal. At least one of the following conditions is satisfied: (1) a dielectric constant of the second oxide layer is larger than a dielectric constant of the first oxide layer; and (2) a band gap of the second oxide layer is smaller than a band gap of the first oxide layer.
摘要翻译：非易失性存储元件包括：第一电极层; 第二电极层; 以及可变电阻层，其设置在电极层之间，并且其电阻状态基于施加在电极层之间的电压的极性而在高电阻状态和低电阻状态之间可逆地变化。可变电阻层通过堆叠包括第一过渡金属的氧化物的第一氧化物层和包含与第一过渡金属不同的第二过渡金属的氧化物的第二氧化物层而形成。满足以下条件中的至少一个：（1）第二氧化物层的介电常数大于第一氧化物层的介电常数; 和（2）第二氧化物层的带隙小于第一氧化物层的带隙。

3. 发明授权

US08094482B2 Nonvolatile memory apparatus and nonvolatile data storage medium 有权
标题翻译：非易失性存储装置和非易失性数据存储介质
公开(公告)号：US08094482B2
公开(公告)日：2012-01-10
申请号：US12529466
申请日：2008-10-28
申请人： Zhiqiang Wei , Takeshi Takagi , Ken Kawai , Kazuhiko Shimakawa
发明人： Zhiqiang Wei , Takeshi Takagi , Ken Kawai , Kazuhiko Shimakawa
IPC分类号： G11C11/00
CPC分类号： H01L27/101 , G11C11/5685 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/0073 , G11C2013/009 , G11C2211/5646 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/79
摘要： A nonvolatile memory apparatus and a nonvolatile data storage medium of the present invention, including nonvolatile memory elements each of which changes its resistance in response to electric pulses applied, comprises a first write circuit for performing first write in which a first electric pulse is applied to the nonvolatile memory element to switch a resistance value of the nonvolatile memory element from a first resistance value to a second resistance value and a second electric pulse which is opposite in polarity to the first electric pulse is applied to the nonvolatile memory element to switch the resistance value of the nonvolatile memory element from the second resistance value to the first resistance value.
摘要翻译：本发明的非易失性存储装置和非易失性数据存储介质，包括各自根据施加的电脉冲改变其电阻的非易失性存储元件，包括用于执行第一写入的第一写入电路，其中施加第一电脉冲到将非易失性存储元件的电阻值从第一电阻值切换到与第一电脉冲极性相反的第二电阻值和第二电脉冲的非易失性存储元件施加到非易失性存储元件，以将电阻非易失性存储元件的值从第二电阻值到第一电阻值。

4. 发明申请

US20110233510A1 NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储元件
公开(公告)号：US20110233510A1
公开(公告)日：2011-09-29
申请号：US13132058
申请日：2009-12-01
申请人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi , Koji Katayama
发明人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi , Koji Katayama
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (103); a second electrode (109); and a resistance variable layer (106) disposed between the first electrode and the second electrode, resistance values of the resistance variable layer reversibly changing in response to electric signals applied between the first electrode and the second electrode; at least one of the first electrode and the second electrode including a platinum-containing layer (107) comprising platinum; the resistance variable layer including at least a first oxygen-deficient transition metal oxide layer (104) which is not physically in contact with the platinum-containing layer and a second oxygen-deficient transition metal oxide layer (105) which is disposed between the first oxygen-deficient transition metal oxide layer and the platinum-containing layer and is physically in contact with the platinum-containing layer; x
摘要翻译：本发明的非易失性存储元件包括第一电极（103）第二电极（109）; 以及设置在所述第一电极和所述第二电极之间的电阻变化层（106），所述电阻变化层的电阻值响应于施加在所述第一电极和所述第二电极之间的电信号而可逆地变化; 所述第一电极和所述第二电极中的至少一个包括含铂的含铂层（107）所述电阻变化层至少包括不与所述含铂层物理接触的第一缺氧过渡金属氧化物层（104）和第二缺氧过渡金属氧化物层（105），所述第二缺氧过渡金属氧化物层（105）设置在所述第一氧缺陷型过渡金属氧化物层和含铂层，并且与含铂层物理接触; 当第一缺氧过渡金属氧化物层中包含的缺氧过渡金属氧化物被表示为MOx时，x

5. 发明申请

US20090014710A1 NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF MANUFACTURE THEREOF 有权
标题翻译：非易失性存储元件，非易失性存储器件及其制造方法
公开(公告)号：US20090014710A1
公开(公告)日：2009-01-15
申请号：US12281034
申请日：2007-03-06
申请人： Yoshio Kawashima , Takeshi Takagi , Takumi Mikawa , Zhiqiang Wei
发明人： Yoshio Kawashima , Takeshi Takagi , Takumi Mikawa , Zhiqiang Wei
IPC分类号： H01L45/00
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2463 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1658 , H01L45/1675
摘要： A lower electrode layer 2, an upper electrode layer 4 formed above the lower electrode layer 2, and a metal oxide thin film layer 3 formed between the lower electrode layer 2 and the upper electrode layer 4 are provided. The metal oxide thin film layer 3 includes a first region 3a whose value of resistance increases or decreases by an electric pulse that is applied between the lower electrode layer 2 and the upper electrode layer 4 and a second region 3b arranged around the first region 3a and having a larger content of oxygen than the first region 3a, wherein the lower and upper electrode layers 2 and 4 and at least a part of the first region 3a are arranged so as to overlap as viewed from the direction of the thickness of the first region 3a.
摘要翻译：设置下电极层2，形成在下电极层2上的上电极层4和形成在下电极层2和上电极层4之间的金属氧化物薄膜层3。金属氧化物薄膜层3包括第一区域3a，其第一区域3a的电阻值通过施加在下电极层2和上电极层4之间的电脉冲和围绕第一区域3a布置的第二区域3b而增大或减小，以及具有比第一区域3a更大的氧含量，其中下电极层2和上电极层4以及第一区域3a的至少一部分从第一区域的厚度方向观察而重叠 3a。

6. 发明申请

US20060081962A1 Variable resistance device made of a material which has an electric resistance value changing in accordance with an applied electric field and maintains the electric resistance value after being changed in a nonvolatile manner, and a semiconductor apparatus including the same 审中-公开
标题翻译：可变电阻装置由具有根据所施加的电场改变的电阻值并且以非易失性方式改变后维持电阻值的材料制成，以及包括该电阻的半导体装置
公开(公告)号：US20060081962A1
公开(公告)日：2006-04-20
申请号：US11231807
申请日：2005-09-22
申请人： Zhiqiang Wei , Yoshihisa Kato
发明人： Zhiqiang Wei , Yoshihisa Kato
IPC分类号： H01L29/00 , H01L29/76
CPC分类号： H03K19/1776 , G11C13/0007 , G11C19/00 , G11C2213/31 , G11C2213/52 , H01L45/04 , H01L45/1206 , H01L45/122 , H01L45/145 , H01L45/147 , H03K19/17736 , H03K19/1778
摘要： The variable resistance device of the present invention comprises a variable resistance layer. The variable resistance layer is made of a material which has an electric resistance changing in accordance with an applied electric field and maintains the electric resistance after being changed in a nonvolatile manner. Provided for the variable resistance layer are four electrodes independent of each other. Of them, two electrodes constitute a control electrode pair, while the remaining two electrodes constituting a read electrode pair. The controle electrode pair is formed for applying an electric field to the variable resistance layer. On the other hand, the read electrode pair is formed as a data path making use of changes in the electric resistance.
摘要翻译：本发明的可变电阻装置包括可变电阻层。可变电阻层由具有根据所施加的电场改变的电阻的材料制成，并且在非易失性地改变之后保持电阻。提供可变电阻层是彼此独立的四个电极。其中，两个电极构成控制电极对，而剩余的两个电极构成读电极对。形成用于向可变电阻层施加电场的控制电极对。另一方面，读取电极对被形成为利用电阻变化的数据路径。

7. 发明申请

US20060081961A1 Variable resistance device and a semiconductor apparatus, including a variable resistance layer made of a material with a perovskite structure 审中-公开
标题翻译：可变电阻器件和半导体器件，包括由具有钙钛矿结构的材料制成的可变电阻层
公开(公告)号：US20060081961A1
公开(公告)日：2006-04-20
申请号：US11231744
申请日：2005-09-22
申请人： Keisuke Tanaka , Yoshihisa Kato , Zhiqiang Wei
发明人： Keisuke Tanaka , Yoshihisa Kato , Zhiqiang Wei
IPC分类号： H01L29/00
CPC分类号： H01L45/04 , H01L27/112 , H01L27/2436 , H01L27/2472 , H01L45/12 , H01L45/1206 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625 , H01L45/1675
摘要： The present invention offers a variable resistance device and a semiconductor apparatus that have component parts less subject to damage and thereby ensure stable quality at a high yield, even if the manufacturing processes include operations in a deoxidizing atmosphere or an oxidizing atmosphere. The variable resistance device of the present invention comprises: a variable resistance layer made of a metal oxide and causing changes in electric resistance thereof in accordance with control conditions; and a hydrogen-diffusion preventing layer which surrounds at least part of the variable resistance layer and prevents hydrogen from diffusing into the variable resistance layer.
摘要翻译：本发明提供一种可变电阻器件和半导体器件，其具有较少受损的部件，从而以高产率确保稳定的质量，即使制造工艺包括在脱氧气氛或氧化气氛中的操作。本发明的可变电阻器件包括：由金属氧化物制成的可变电阻层，并根据控制条件引起其电阻变化; 以及包围可变电阻层的至少一部分并防止氢扩散到可变电阻层中的氢扩散防止层。

8. 发明授权

US08445885B2 Nonvolatile memory element having a thin platinum containing electrode 有权
标题翻译：具有薄铂电极的非易失性存储元件
公开(公告)号：US08445885B2
公开(公告)日：2013-05-21
申请号：US13132058
申请日：2009-12-01
申请人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi , Koji Katayama
发明人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi , Koji Katayama
IPC分类号： H01L29/02
CPC分类号： H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element includes first and second electrodes, and a resistance variable layer disposed therebetween. At least one of the first and second electrodes includes a platinum-containing layer. The resistance variable layer includes a first oxygen-deficient transition metal oxide layer which is not physically in contact with the platinum-containing layer and a second oxygen-deficient transition metal oxide layer which is disposed between the first oxygen-deficient transition metal oxide layer and the platinum-containing layer and is physically in contact with the platinum-containing layer. When oxygen-deficient transition metal oxides included in the first and second oxygen-deficient transition metal oxide layers are expressed as MOx, and MOy, respectively, x
摘要翻译：非易失性存储元件包括第一和第二电极以及设置在它们之间的电阻变化层。第一和第二电极中的至少一个包括含铂层。电阻变化层包括不与含铂层物理接触的第一缺氧过渡金属氧化物层和设置在第一缺氧过渡金属氧化物层和第二缺氧过渡金属氧化物层之间的第二缺氧过渡金属氧化物层所述含铂层并且与所述含铂层物理接触。包含在第一和第二缺氧过渡金属氧化物层中的缺氧过渡金属氧化物分别表示为MOx，MOy分别表示为x

9. 发明授权

US08405076B2 Nonvolatile memory element 有权
标题翻译：非易失性存储元件
公开(公告)号：US08405076B2
公开(公告)日：2013-03-26
申请号：US12920154
申请日：2010-02-03
申请人： Takeki Ninomiya , Takeshi Takagi , Zhiqiang Wei
发明人： Takeki Ninomiya , Takeshi Takagi , Zhiqiang Wei
IPC分类号： H01L29/12
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/32 , G11C2213/34 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile memory element (100) includes a variable resistance layer (107) including a first metal oxide MOx and a second metal oxide MOy, and reaction energy of chemical reaction related to the first metal oxide, the second metal oxide, oxygen ions, and electrons is 2 eV or less. The chemical reaction is expressed by a formula 13, where a combination (MOx, MOy) of MOx and MOy is selected from a group including (Cr2O3, CrO3), (Co3O4, Co2O3), (Mn3O4, Mn2O3), (VO2, V2O5), (Ce2O3, CeO2), (W3O8, WO3), (Cu2O, CuO), (SnO, SnO2), (NbO2, Nb2O5), and (Ti2O3, TiO2). [Mathematical Expression 13] MOx+(y−x)O2−MOy+2(y−x)e− (Formula 13)
摘要翻译：非易失性存储元件（100）包括可变电阻层（107），其包括第一金属氧化物MOx和第二金属氧化物MOy，以及与第一金属氧化物，第二金属氧化物，氧离子和电子为2eV以下。化学反应由式13表示，其中MOx和MOy的组合（MOx，MOy）选自（Cr 2 O 3，CrO 3），（Co 3 O 4，Co 2 O 3），（Mn 3 O 4，Mn 2 O 3），（VO 2，V 2 O 5）），（Ce 2 O 3，CeO 2），（W3O 8，WO 3），（Cu 2 O，CuO），（SnO，SnO 2），（NbO 2，Nb 2 O 5）和（Ti 2 O 3，TiO 2）。 [数学表达式13] MOx +（y-x）O2-MOy + 2（y-x）e-（式13）

10. 发明授权

US08338816B2 Nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory element 有权
标题翻译：非易失性存储元件和使用非易失性存储元件的非易失性半导体器件
公开(公告)号：US08338816B2
公开(公告)日：2012-12-25
申请号：US12682676
申请日：2008-03-31
申请人： Yoshihiko Kanzawa , Shunsaku Muraoka , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi
发明人： Yoshihiko Kanzawa , Shunsaku Muraoka , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi
IPC分类号： H01L47/00 , H01L29/02 , H01L29/66
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (503); a second electrode (505); and a resistance variable layer (504) which is disposed between the first electrode (503) and the second electrode (505), a resistance value of the resistance variable layer being changeable in response to electric signals which are applied between the first electrode (503) and the second electrode (505), wherein the first electrode and the second electrode comprise materials which are made of different elements.
摘要翻译：本发明的非易失性存储元件包括第一电极（503）; 第二电极（505）; 以及设置在第一电极（503）和第二电极（505）之间的电阻变化层（504），电阻变化层的电阻值根据施加在第一电极（503）和第二电极）和第二电极（505），其中第一电极和第二电极包括由不同元件制成的材料。

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