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81. 发明申请

US20060276476A1 Carboxylic acid derivatives that inhibit the binding of integrins to their receptors 有权
标题翻译：抑制整联蛋白与其受体结合的羧酸衍生物
公开(公告)号：US20060276476A1
公开(公告)日：2006-12-07
申请号：US11152695
申请日：2005-06-14
申请人： Ronald Biediger , Qi Chen , E. Decker , George Holland , Jamal Kassir , Wen Li , Robert Market , Ian Scott , Chengde Wu , Jian Li
发明人： Ronald Biediger , Qi Chen , E. Decker , George Holland , Jamal Kassir , Wen Li , Robert Market , Ian Scott , Chengde Wu , Jian Li
IPC分类号： A61K31/50
CPC分类号： C07D213/75 , C07D215/22 , C07D221/04 , C07D221/16 , C07D237/22 , C07D239/47 , C07D317/60 , C07D401/04 , C07D401/12 , C07D403/12 , C07D405/12 , C07D409/06 , C07D409/12 , C07D409/14 , C07D413/06 , C07D413/12 , C07D417/06 , C07D471/04
摘要： A method for the inhibition of the binding of α4β1 integrin to its receptors, for example VCAM-1 (vascular cell adhesion molecule-1) and fibronectin; compounds that inhibit this binding; pharmaceutically active compositions comprising such compounds; and to the use of such compounds either a above, or in formulations for the control or prevention of diseases states in which α4β1 is involved.
摘要翻译：用于抑制α4A/β1整联蛋白与其受体例如VCAM-1（血管细胞粘附分子-1）和纤连蛋白的结合的方法; 抑制这种结合的化合物; 包含这些化合物的药物活性组合物; 以及上述或在制剂中使用这些化合物用于控制或预防涉及α4β1的疾病状态。

82. 发明授权

US07078788B2 Microelectronic substrates with integrated devices 有权
公开(公告)号：US07078788B2
公开(公告)日：2006-07-18
申请号：US10964238
申请日：2004-10-13
申请人： Quat T. Vu , Jian Li , Steven Towle
发明人： Quat T. Vu , Jian Li , Steven Towle
IPC分类号： H05K3/34 , H05K7/02 , H01L23/34 , H01L23/28
CPC分类号： H01L21/568 , H01L21/56 , H01L21/561 , H01L23/3114 , H01L23/5389 , H01L24/19 , H01L24/24 , H01L24/82 , H01L24/96 , H01L24/97 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/20 , H01L2224/211 , H01L2224/32145 , H01L2224/32225 , H01L2224/73267 , H01L2224/97 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/12042 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/15331 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H05K1/185 , H05K3/4602 , H01L2224/82 , H01L2924/00
摘要： A microelectronic substrate including at least one microelectronic device disposed within an opening in a microelectronic substrate core, wherein an encapsulation material is disposed within portions of the opening not occupied by the microelectronic devices, or a plurality microelectronic devices encapsulated without the microelectronic substrate core. At least one conductive via extended through the substrate, which allows electrical communication between opposing sides of the substrate. Interconnection layers of dielectric materials and conductive traces are then fabricated on the microelectronic device, the encapsulation material, and the microelectronic substrate core (if present) to form the microelectronic substrate.

83. 发明申请

US20060138453A1 Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer 有权
标题翻译：具有菲咯啉激子阻挡层的有机光敏光电器件
公开(公告)号：US20060138453A1
公开(公告)日：2006-06-29
申请号：US11286228
申请日：2005-11-22
申请人： Mark Thompson , Jian Li , Stephen Forrest , Barry Rand
发明人： Mark Thompson , Jian Li , Stephen Forrest , Barry Rand
IPC分类号： H01L51/42
CPC分类号： H01L51/0072 , B82Y10/00 , H01L27/302 , H01L51/0046 , H01L51/0053 , H01L51/0078 , H01L51/424 , H01L51/4246 , H01L51/4253 , H01L2251/308 , Y02E10/549
摘要： An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.
摘要翻译：描述了在阳极和阴极之间具有阳极，阴极和有机阻挡层的有机光敏光电子器件，其中阻挡层包含菲咯啉衍生物，并且至少部分阻断至少一个激子，电子和孔。

84. 发明申请

US20060016751A1 Method of concentrating pulp mill extracts 审中-公开
标题翻译：浓缩纸浆提取物的方法
公开(公告)号：US20060016751A1
公开(公告)日：2006-01-26
申请号：US10897934
申请日：2004-07-23
申请人： Omar Ali , Jian Li , H. Rogers
发明人： Omar Ali , Jian Li , H. Rogers
IPC分类号： B01D61/04
CPC分类号： B01D61/027 , B01D61/022 , B01D61/04 , B01D2311/04 , C02F1/442 , D21C3/00 , D21C9/02 , D21C9/10 , D21C9/18 , B01D2311/12
摘要： A process for separating organic components from a pulp mill waste stream comprising the steps of washing a cellulose pulp to obtain an aqueous extraction liquor containing organic components, and separating at least a portion of said organic components from the extraction liquor by passing the extraction liquor through at least one nanofiltration membrane. The process may be used in conjunction with a variety of pulp mill processes, including kraft cooking processes, hot caustic extraction processes, sulfite cooking processes, and bleaching processes.
摘要翻译：一种从纸浆厂废物流中分离有机成分的方法，包括以下步骤：洗涤纤维素纸浆以获得含有机组分的含水萃取液，并通过使萃取液通过所述提取液将所述有机组分的至少一部分与萃取液分离至少一个纳滤膜。该方法可以与各种纸浆研磨工艺结合使用，包括硫酸盐蒸煮方法，热苛性碱提取方法，亚硫酸盐蒸煮方法和漂白方法。

85. 发明申请

US20050196931A1 Self-aligned lateral heterojunction bipolar transistor 有权
标题翻译：自对准横向异质结双极晶体管
公开(公告)号：US20050196931A1
公开(公告)日：2005-09-08
申请号：US11123748
申请日：2005-05-04
申请人： Jian Li , Lap Chan , Purakh Verma , Jia Zheng , Shao-fu Chu
发明人： Jian Li , Lap Chan , Purakh Verma , Jia Zheng , Shao-fu Chu
IPC分类号： H01L21/331 , H01L29/737
CPC分类号： H01L29/66242 , H01L29/737
摘要： A lateral heterojunction bipolar transistor (HBT), comprising a semiconductor substrate having having a first insulating layer over the semiconductor substrate. A base trench is formed in a first silicon layer over the first insulating layer to form a collector layer over an exposed portion of the semiconductor substrate and an emitter layer over the first insulating layer. A semiconductive layer is formed on the sidewalls of the base trench to form a collector structure in contact with the collector layer and an emitter structure in contact with the emitter layer. A base structure is formed in the base trench. A plurality of connections is formed through an interlevel dielectric layer to the collector layer, the emitter layer, and the base structure. The base structure preferably is a compound semiconductive material of silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.
摘要翻译：一种横向异质结双极晶体管（HBT），包括在半导体衬底上具有第一绝缘层的半导体衬底。基底沟槽形成在第一绝缘层上的第一硅层中，以在半导体衬底的暴露部分和第一绝缘层上的发射极层之上形成集电极层。半导体层形成在基底沟槽的侧壁上，以形成与集电极层接触的集电极结构和与发射极层接触的发射极结构。基底结构形成在基底沟槽中。通过层间电介质层到集电极层，发射极层和基底结构形成多个连接。基底结构优选是硅的化合物半导体材料和硅 - 锗，硅 - 锗 - 碳及其组合中的至少一种。

86. 发明申请

US20050145953A1 Heterojunction BiCMOS integrated circuits and method therefor 审中-公开
标题翻译：异质结BiCMOS集成电路及其方法
公开(公告)号：US20050145953A1
公开(公告)日：2005-07-07
申请号：US10752454
申请日：2004-01-05
申请人： Lap Chan , Jia Zheng , Purakh Verma , Jian Li , Shao-fu Chu
发明人： Lap Chan , Jia Zheng , Purakh Verma , Jian Li , Shao-fu Chu
IPC分类号： H01L21/331 , H01L21/8249 , H01L27/06 , H01L31/113
CPC分类号： H01L29/66242 , H01L21/8249 , H01L27/0623
摘要： A method of manufacturing a BiCMOS integrated circuit including a CMOS transistor having a gate structure, and a heterojunction bipolar transistor having an extrinsic base structure. A substrate is provided, and a polysilicon layer is formed over the substrate. The gate structure and the extrinsic base structure are formed in the polysilicon layer. A plurality of contacts is formed through the interlevel dielectric layer to the CMOS transistor and the heterojunction bipolar transistor.
摘要翻译：一种制造包括具有栅极结构的CMOS晶体管的BiCMOS集成电路的方法和具有外在基极结构的异质结双极晶体管。提供衬底，并且在衬底上形成多晶硅层。栅极结构和非本征基极结构形成在多晶硅层中。多个触点通过层间介质层形成到CMOS晶体管和异质结双极晶体管。

87. 发明授权

US06911891B2 Bistable actuation techniques, mechanisms, and applications 失效
标题翻译：双稳态致动技术，机构和应用
公开(公告)号：US06911891B2
公开(公告)日：2005-06-28
申请号：US10052667
申请日：2002-01-18
申请人： Jin Qiu , Alexander H. Slocum , Jeffrey H. Lang , Ralf Struempler , Michael P. Brenner , Jian Li
发明人： Jin Qiu , Alexander H. Slocum , Jeffrey H. Lang , Ralf Struempler , Michael P. Brenner , Jian Li
IPC分类号： B81B3/00 , H01H1/00 , H01H1/24 , H01H50/00 , H01H59/00 , H01H61/00 , H01H37/52 , H01H37/54
CPC分类号： B81B3/0051 , B33Y70/00 , B33Y80/00 , B81B2201/016 , B81B2203/0109 , B81B2203/051 , H01H1/0036 , H01H1/24 , H01H50/005 , H01H59/0009 , H01H61/00 , H01H2001/0042 , H01H2061/006
摘要： A bistable structure provided by the invention is characterized as including a deflection element that has mechanically constrained end points and a compliant span between the end points that is substantially free to deflect between two stable positions when a force is applied at a point along the span. The deflection element span is provided, as-fabricated, curved in one of the two stable positions and in a mechanically unstressed condition along the length of the span. The as-fabricated curve of the deflection element span includes a curve maxima at a point along the span length that is at least about ¼ of the span length from the end points of the span. The deflection element span is constrained to substantially prohibit development of a second bending mode that is characteristic for the span as the element deflects between the two stable positions.
摘要翻译：由本发明提供的双稳态结构的特征在于包括一个偏转元件，该偏转元件具有机械约束的端点和端点之间的顺应跨度，当在沿跨度的点施加力时，基本上自由地在两个稳定位置之间偏转。偏转元件跨度设置成沿着跨度的长度在两个稳定位置中的一个中并且以机械无应力状态弯曲。偏转元件跨度的制造曲线包括沿着跨度长度的点处的曲线最大值，其距离跨度端点的跨度长度的至少约1/4。偏转元件跨度被限制为基本上禁止当元件在两个稳定位置之间偏转时跨度的特征的第二弯曲模式的发展。

88. 发明授权

US06896810B2 Process for producing alkaline treated cellulosic fibers 有权
标题翻译：生产碱处理纤维素纤维的方法
公开(公告)号：US06896810B2
公开(公告)日：2005-05-24
申请号：US10211043
申请日：2002-08-02
申请人： Omar F. Ali , John T. Cenicola , Jian Li , Jay D. Taylor
发明人： Omar F. Ali , John T. Cenicola , Jian Li , Jay D. Taylor
IPC分类号： C08B1/00 , C08B1/08 , C08B1/10 , C08B1/12 , D21C9/00 , B01D61/00
CPC分类号： C08B1/00 , C08B1/08 , C08B1/10 , C08B1/12 , D21C9/004
摘要： Systems and methods by which to subject cellulosic fibers to alkaline treatment are provided. The systems and methods of the invention include equipment, such as nanofiltration units and slurry concentrators, which result in a lowered overall consumption of alkaline solution during alkaline treatment. The systems and methods of the invention further allow the components of hemicaustic streams produced by such alkaline treatments to be utilized in higher value end uses.
摘要翻译：提供了使纤维素纤维进行碱处理的系统和方法。本发明的系统和方法包括诸如纳米过滤单元和浆料浓缩器的设备，其在碱处理期间导致碱溶液的总消耗量降低。本发明的系统和方法还允许通过这种碱处理产生的半透明气流的组分用于更高价值的最终用途。

89. 发明申请

US20050107692A1 Multi-frequency microwave-induced thermoacoustic imaging of biological tissue 失效
标题翻译：多频微波诱导的热声成像生物组织
公开(公告)号：US20050107692A1
公开(公告)日：2005-05-19
申请号：US10714795
申请日：2003-11-17
申请人： Jian Li , Gang Wang
发明人： Jian Li , Gang Wang
IPC分类号： A61B5/05
CPC分类号： A61B5/4312 , A61B5/0095 , A61B5/05 , A61B5/0507
摘要： A method and system for examining biological tissue includes the steps of radiating a tissue region with a plurality of microwave radiation pulses. The microwave pulses are swept across a range of microwave frequencies. In response to the swept frequency microwave pulses, the tissue region emits a plurality of thermoacoustic signals. At least one image of the tissue region is formed from the plurality of thermoacoustic signals. The signals can be ultrawideband signals.
摘要翻译：用于检查生物组织的方法和系统包括以多个微波辐射脉冲辐射组织区域的步骤。微波脉冲扫过一定范围的微波频率。响应于扫频频率微波脉冲，组织区域发射多个热声信号。由多个热声信号形成组织区域的至少一个图像。信号可以是超宽带信号。

90. 发明申请

US20050101096A1 SELF-ALIGNED LATERAL HETEROJUNCTION BIPOLAR TRANSISTOR 有权
标题翻译：自对准侧向异相双极晶体管
公开(公告)号：US20050101096A1
公开(公告)日：2005-05-12
申请号：US10703284
申请日：2003-11-06
申请人： Jian Li , Lap Chan , Purakh Verma , Jia Zheng , Shao-Fu Chu
发明人： Jian Li , Lap Chan , Purakh Verma , Jia Zheng , Shao-Fu Chu
IPC分类号： H01L21/331 , H01L29/737 , H01L21/8222
CPC分类号： H01L29/66242 , H01L29/737
摘要： A method for manufacturing a lateral heterojunction bipolar transistor (HBT) is provided comprising a semiconductor substrate having a first insulating layer over the semiconductor substrate. A base trench is formed in a first silicon layer over the first insulating layer to form a collector layer over an exposed portion of the semiconductor substrate and an emitter layer over the first insulating layer. A semiconductive layer is formed on the sidewalls of the base trench to form a collector structure in contact with the collector layer and an emitter structure in contact with the emitter layer. A base structure is formed in the base trench. A plurality of connections is formed through an interlevel dielectric layer to the collector layer, the emitter layer, and the base structure. The base structure preferably is a compound semiconductive material of silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.
摘要翻译：提供一种用于制造横向异质结双极晶体管（HBT）的方法，包括半导体衬底上的第一绝缘层的半导体衬底。基底沟槽形成在第一绝缘层上的第一硅层中，以在半导体衬底的暴露部分和第一绝缘层上的发射极层之上形成集电极层。半导体层形成在基底沟槽的侧壁上，以形成与集电极层接触的集电极结构和与发射极层接触的发射极结构。基底结构形成在基底沟槽中。通过层间电介质层到集电极层，发射极层和基底结构形成多个连接。基底结构优选是硅的化合物半导体材料和硅 - 锗，硅 - 锗 - 碳及其组合中的至少一种。

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