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    • 82. 发明授权
    • Thin film transistor array panel for liquid crystal display having pixel electrode
    • 具有像素电极的液晶显示器的薄膜晶体管阵列面板
    • US07646444B2
    • 2010-01-12
    • US11873767
    • 2007-10-17
    • Dong-Gyu KimHyang-Shik KongJang-Soo Kim
    • Dong-Gyu KimHyang-Shik KongJang-Soo Kim
    • G02F1/136G02F1/1343
    • G02F1/136213G02F1/1337G02F1/133784G02F1/134336G02F1/136227G02F2201/123
    • A TFT array panel includes an insulating substrate, a gate line and a storage electrode line formed thereon. The gate line and the storage electrode line are covered with a gate insulating layer, and a semiconductor island is formed on the gate insulating layer. A pair of ohmic contacts are formed on the semiconductor island, and a data line and a drain electrode are formed thereon. The data line and the drain electrode are covered with a passivation layer having a contact hole exposing the drain electrode. A pixel electrode is formed on the passivation layer and connected to the drain electrode through the contact hole. The TFT array panel is covered with an alignment layer rubbed approximately in a direction from the upper left corner to the lower right corner of the TFT array panel or the pixel electrodes. The pixel electrode has approximately a rectangular shape and overlaps the gate line and the data line. The pixel electrode has an expansion located near the upper left corner of the pixel electrode to increase the width of the corresponding overlapping area between the pixel electrode and the gate line and/or the data line.
    • TFT阵列面板包括绝缘基板,栅极线和形成在其上的存储电极线。 栅极线和存储电极线被栅极绝缘层覆盖,并且在栅极绝缘层上形成半导体岛。 在半导体岛上形成一对欧姆接触,在其上形成数据线和漏电极。 数据线和漏电极被具有暴露漏电极的接触孔的钝化层覆盖。 像素电极形成在钝化层上,并通过接触孔与漏电极连接。 TFT阵列面板被大致沿着从TFT阵列板的左上角到右下角或像素电极的方向摩擦的取向膜覆盖。 像素电极具有大致矩形形状并且与栅极线和数据线重叠。 像素电极具有位于像素电极的左上角附近的扩展部,以增加像素电极与栅极线和/或数据线之间的对应重叠区域的宽度。
    • 89. 发明授权
    • Thin film transistor array panel
    • 薄膜晶体管阵列面板
    • US07291860B2
    • 2007-11-06
    • US10699791
    • 2003-11-04
    • Cheol-Soo JungYoung-Sun KimHo-Joon LeeYeong-Hwan ChoHyeon-Hwan KimBung-Hyuk MinWoon-Yong ParkIl-Gon KimJang-Soo KimJin-Oh KwagSeog-Chae Lee
    • Cheol-Soo JungYoung-Sun KimHo-Joon LeeYeong-Hwan ChoHyeon-Hwan KimBung-Hyuk MinWoon-Yong ParkIl-Gon KimJang-Soo KimJin-Oh KwagSeog-Chae Lee
    • H01L31/00
    • G02F1/136259G02F2001/136263G02F2001/136272H01L27/12
    • A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line. A redundant repair line overlaps and is insulated from the storage wire at one end and overlaps the storage wire or the gate wire of a neighboring pixel at the other end is formed in the same layer as the data wire. Also, a storage wire connection portion connecting the storage wires of a neighboring pixel is formed in the same layer as the pixel electrode. In this structure, if portions of the gate wire or the data wire are disconnected, the portions overlapping the disconnected wire, the storage wire, and the redundant repair line are shorted to repair an open wire defect.
    • 在绝缘基板上形成沿水平方向延伸的栅极线,并且垂直于限定矩阵阵列的像素的栅极线形成数据线。 通过数据线接收图像信号的像素电极形成在像素中,并且形成具有连接到栅极线的栅电极,连接到数据线的源电极和连接到像素电极的漏电极的薄膜晶体管 在栅极线和数据线相交的部分。 包括在水平方向上存储电极线的存储线,连接到存储电极线的存储电极,以及连接相邻像素的存储电极的至少一个存储电极连接部分以与栅极线相同的方向形成。 冗余修复线与存储线在一端重叠并与存储线绝缘,并与存储线重叠,另一端的相邻像素的栅极线形成在与数据线相同的层中。 此外,连接相邻像素的存储线的存储线连接部分形成在与像素电极相同的层中。 在这种结构中,如果栅极线或数据线的部分断开,与断开的线,存储线和冗余修复线重叠的部分短路以修复开路的线缺陷。
    • 90. 发明申请
    • Method of Forming a Metal Line and Method of Manufacturing a Display Substrate by Using the Same
    • 形成金属线的方法和使用其制造显示基板的方法
    • US20070249097A1
    • 2007-10-25
    • US11669572
    • 2007-01-31
    • Jang-Soo KimSang-Gab Kim
    • Jang-Soo KimSang-Gab Kim
    • H01L21/00
    • H01L27/1288H01L27/1214
    • In a method of forming a metal line and a method of manufacturing a display substrate, a channel layer and a metal layer are successively formed on a base substrate. A photoresist pattern is formed in a wiring area. The metal layer is etched by using the photoresist pattern to form a metal line. The photoresist pattern is removed by a predetermined thickness to from a residual photoresist pattern on the metal line. The channel layer is etched by using the metal line to form an under cut under the metal line. The protruding portion of the metal line is removed by using the residual photoresist pattern. The protruding portion relatively protrudes by formation of the undercut. Thus, an aperture ratio is increased, an afterimage is prevented, and the display quality is improved.
    • 在形成金属线的方法和显示基板的制造方法中,在基底基板上依次形成沟道层和金属层。 在布线区域形成光刻胶图形。 通过使用光致抗蚀剂图案来蚀刻金属层以形成金属线。 将光致抗蚀剂图案从金属线上的残留光致抗蚀剂图案去除预定厚度。 通过使用金属线蚀刻沟道层,以在金属线下形成下切口。 通过使用残留的光致抗蚀剂图案来去除金属线的突出部分。 突出部分通过形成底切而相对地突出。 因此,孔径比增加,防止残像,并提高显示质量。