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71. 发明授权

US08227307B2 Method for removing threshold voltage adjusting layer with external acid diffusion process 有权
标题翻译：用外部酸性扩散法去除阈值电压调节层的方法
公开(公告)号：US08227307B2
公开(公告)日：2012-07-24
申请号：US12490353
申请日：2009-06-24
申请人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
IPC分类号： H01L21/8238 , H01L21/31
CPC分类号： H01L21/31122 , H01L21/823842 , H01L21/823857
摘要： The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.
摘要翻译：本发明提供一种形成阈值电压调节的栅极叠层的方法，其中使用外部酸扩散工艺来从半导体衬底的一个器件区域选择性地去除一部分阈值电压调节层。外部酸扩散方法使用酸性聚合物，其在烘烤时表现出酸浓度的增加，其可以扩散到阈值电压调节层的下部暴露部分。扩散的酸与阈值电压调节层的暴露部分反应，提供酸反应层，与不暴露于扩散的酸的阈值电压调节层的横向相邻部分相比，可以选择性地除去酸反应层。

72. 发明授权

US08227180B2 Photolithography focus improvement by reduction of autofocus radiation transmission into substrate 有权
标题翻译：通过将自动聚焦辐射透射减少到基底中来进行光刻聚焦改进
公开(公告)号：US08227180B2
公开(公告)日：2012-07-24
申请号：US13158901
申请日：2011-06-13
申请人： Timothy Allan Brunner , Sean David Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
发明人： Timothy Allan Brunner , Sean David Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
IPC分类号： G03F7/00 , G03F7/028 , G03F7/11 , G03F7/20 , G03F7/40
CPC分类号： G03F7/091 , G03F7/70216 , Y10S430/127
摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.
摘要翻译：防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

73. 发明申请

US20120070787A1 PHOTORESIST COMPOSITIONS AND METHODS FOR SHRINKING A PHOTORESIST CRITICAL DIMENSION 失效
标题翻译：光电复合材料组合物和方法，用于收缩光刻胶关键尺寸
公开(公告)号：US20120070787A1
公开(公告)日：2012-03-22
申请号：US12883442
申请日：2010-09-16
申请人： Wu-Song Huang , Kuang-Jung Chen , Wai-Kin Li , Sen Liu
发明人： Wu-Song Huang , Kuang-Jung Chen , Wai-Kin Li , Sen Liu
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0397 , G03F7/405
摘要： A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.
摘要翻译：一种降低光致抗蚀剂临界尺寸的方法，所述方法包括在基底上沉积光致抗蚀剂膜，其中光致抗蚀剂膜包括热碱发生器; 图案化光致抗蚀剂膜以形成具有第一临界尺寸的第一图案化膜; 在第一图案化膜上沉积可交联膜; 在沉积可交联膜之前或之后热激活第一图案化膜，以释放第一图案化膜中的碱，并引起与第一图案化膜接触的可交联膜的交联; 并且显影所述可交联膜以除去其中的非交联的可溶部分以形成与第一临界尺寸相比具有降低的临界尺寸的第二图案化膜。

74. 发明授权

US08097401B2 Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same 有权
标题翻译：自形成顶部抗反射涂料组合物和光致抗蚀剂混合物和使用其成像的方法
公开(公告)号：US08097401B2
公开(公告)日：2012-01-17
申请号：US12409738
申请日：2009-03-24
申请人： Wu-Song Huang , Irene Popova , Pushkara Rao Varanasi , Libor Vyklicky
发明人： Wu-Song Huang , Irene Popova , Pushkara Rao Varanasi , Libor Vyklicky
IPC分类号： G03F7/20 , G03F7/11
CPC分类号： C08F212/34 , C08F212/32 , C08F220/22 , C08F220/26 , C08F220/28 , G03F7/0046 , G03F7/0392 , G03F7/091
摘要： A composition of matter. The composition of matter includes a polymer having an ethylenic backbone and comprising a first monomer having an aromatic moiety, a second monomer having a base soluble moiety or an acid labile protected base soluble moiety, and a third monomer having a fluoroalkyl moiety. Also a photoresist formulation including the composition of matter and a method of imaging using the photoresist formulation including the composition of matter.
摘要翻译：物质的组成。物质的组成包括具有乙烯主链并包含具有芳族部分的第一单体，具有碱可溶部分的第二单体或酸不稳定保护基可溶部分的第一单体和具有氟代烷基部分的第三单体的聚合物。还包括包含物质组合物的光致抗蚀剂制剂和使用包含物质组成的光致抗蚀剂制剂的成像方法。

75. 发明申请

US20110262863A1 NEAR-INFRARED ABSORPTIVE LAYER-FORMING COMPOSITION AND MULTILAYER FILM 审中-公开
标题翻译：近红外吸收层形成组合物和多层膜
公开(公告)号：US20110262863A1
公开(公告)日：2011-10-27
申请号：US13091290
申请日：2011-04-21
申请人： Seiichiro TACHIBANA , Masaki Ohashi , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
发明人： Seiichiro TACHIBANA , Masaki Ohashi , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
IPC分类号： G03F7/004 , F21V9/04
CPC分类号： G03F7/091
摘要： A near-infrared absorptive layer is formed from a composition comprising (A) an acenaphthylene polymer, (B) a near-infrared absorbing dye, and (C) a solvent. When a multilayer film comprising the near-infrared absorptive layer and a photoresist layer is used in optical lithography, the detection accuracy of optical auto-focusing is improved, allowing the optical lithography to produce a definite projection image with an improved contrast and succeeding in forming a better photoresist pattern.
摘要翻译：由（A）苊烯聚合物，（B）近红外吸收染料和（C）溶剂组成的组合物形成近红外吸收层。当在光学光刻中使用包含近红外吸收层和光致抗蚀剂层的多层膜时，光学自动聚焦的检测精度得到改善，允许光学光刻产生具有改善的对比度并成功地形成的确定的投影图像更好的光刻胶图案。

76. 发明申请

US20110129652A1 Chemical Trim of Photoresist Lines by Means of A Tuned Overcoat 有权
标题翻译：通过调整大衣的光刻胶线的化学修剪
公开(公告)号：US20110129652A1
公开(公告)日：2011-06-02
申请号：US12983297
申请日：2011-01-01
申请人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
发明人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
IPC分类号： B32B3/02 , G03F7/20
CPC分类号： G03F7/40 , Y10T428/24802
摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
摘要翻译：新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影，以形成具有初始线宽的nm阶节点图像。用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。可选地，重复前述步骤进一步减小了变窄线的线宽。本发明还包括通过该方法生产的产品。

77. 发明申请

US20110111345A1 SILICON CONTAINING COATING COMPOSITIONS AND METHODS OF USE 有权
标题翻译：含硅的涂料组合物和使用方法
公开(公告)号：US20110111345A1
公开(公告)日：2011-05-12
申请号：US12613804
申请日：2009-11-06
申请人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
发明人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： C09D143/04 , G03F7/0392 , G03F7/0397 , G03F7/0758 , G03F7/094 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
摘要翻译：涂料组合物包括聚合物，其包括：其中R1是含硅部分，R2是酸稳定的内酯官能团，R3是酸不稳定的内酯官能团; X 1，X 2，X 3独立地为H或CH 3; 并且m和o是非零正整数，n是零或表示重复单元数的正整数; 光致酸发生器; 和溶剂。还公开了在含有该图案的涂料组合物中形成图案的方法。

78. 发明申请

US20110042771A1 Near-Infrared Absorbing Film Compositions 有权
标题翻译：近红外吸收膜组合物
公开(公告)号：US20110042771A1
公开(公告)日：2011-02-24
申请号：US12542970
申请日：2009-08-18
申请人： Wu-Song Huang , Martin Glodde , Dario L. Goldfarb , Wai-Kin Li , Sen Liu , Libor Vyklicky
发明人： Wu-Song Huang , Martin Glodde , Dario L. Goldfarb , Wai-Kin Li , Sen Liu , Libor Vyklicky
IPC分类号： H01L31/0216 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0388 , G03F7/038 , G03F7/091 , G03F7/11 , H01L51/447
摘要： A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
摘要翻译：一种可固化液体制剂，其包含：（i）一种或多种近红外吸收聚甲炔染料; （ii）一种或多种可交联聚合物; 和（iii）一种或多种浇铸溶剂。本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法和光刻胶膜。

79. 发明授权

US07838200B2 Photoresist compositions and method for multiple exposures with multiple layer resist systems 有权
公开(公告)号：US07838200B2
公开(公告)日：2010-11-23
申请号：US12356187
申请日：2009-01-20
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi , Sen Liu
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi , Sen Liu
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/40
CPC分类号： G03F7/0045 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

80. 发明授权

US07803521B2 Photoresist compositions and process for multiple exposures with multiple layer photoresist systems 失效
标题翻译：光刻胶组合物和多层光刻胶系统的多次曝光工艺
公开(公告)号：US07803521B2
公开(公告)日：2010-09-28
申请号：US11942062
申请日：2007-11-19
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara R. Varanasi
IPC分类号： G03F7/30
CPC分类号： G03F7/0048 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.
摘要翻译：光致抗蚀剂组合物和在多次曝光/多层工艺中使用光致抗蚀剂组合物的方法。光致抗蚀剂组合物包括包含具有羟基部分的重复单元的聚合物; 光致酸发生器; 和溶剂。形成在基材上的聚合物在加热至约150℃或更高的温度之后基本上不溶于溶剂。一种方法包括在衬底上形成第一光致抗蚀剂层，图案地暴露第一光致抗蚀剂层，在衬底上形成第二非光致抗蚀剂层并且形成图案化的第一光致抗蚀剂层。另一种方法包括在衬底上形成第一光致抗蚀剂层，以图形方式暴露第一光致抗蚀剂层，在衬底上形成第二光致抗蚀剂层并图案化的第一光致抗蚀剂层和图案地曝光第二光致抗蚀剂层。

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