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1. 发明授权

US08802347B2 Silicon containing coating compositions and methods of use 有权
标题翻译：含硅涂料组合物和使用方法
公开(公告)号：US08802347B2
公开(公告)日：2014-08-12
申请号：US12613804
申请日：2009-11-06
申请人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
发明人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
IPC分类号： G03F7/039 , G03F7/11 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： C09D143/04 , G03F7/0392 , G03F7/0397 , G03F7/0758 , G03F7/094 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
摘要翻译：涂料组合物包括聚合物，其包括：其中R1是含硅部分，R2是酸稳定的内酯官能团，R3是酸不稳定的内酯官能团; X 1，X 2，X 3独立地为H或CH 3; 并且m和o是非零正整数，n是零或表示重复单元数的正整数; 光致酸发生器; 和溶剂。还公开了在含有该图案的涂料组合物中形成图案的方法。

2. 发明申请

US20110111345A1 SILICON CONTAINING COATING COMPOSITIONS AND METHODS OF USE 有权
标题翻译：含硅的涂料组合物和使用方法
公开(公告)号：US20110111345A1
公开(公告)日：2011-05-12
申请号：US12613804
申请日：2009-11-06
申请人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
发明人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： C09D143/04 , G03F7/0392 , G03F7/0397 , G03F7/0758 , G03F7/094 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
摘要翻译：涂料组合物包括聚合物，其包括：其中R1是含硅部分，R2是酸稳定的内酯官能团，R3是酸不稳定的内酯官能团; X 1，X 2，X 3独立地为H或CH 3; 并且m和o是非零正整数，n是零或表示重复单元数的正整数; 光致酸发生器; 和溶剂。还公开了在含有该图案的涂料组合物中形成图案的方法。

3. 发明授权

US07141692B2 Molecular photoresists containing nonpolymeric silsesquioxanes 有权
标题翻译：含有非聚合倍半硅氧烷的分子光刻胶
公开(公告)号：US07141692B2
公开(公告)日：2006-11-28
申请号：US10721302
申请日：2003-11-24
申请人： Robert David Allen , Wu-Song Huang , Mahmoud Khojasteh , Qinghuang Lin , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong
发明人： Robert David Allen , Wu-Song Huang , Mahmoud Khojasteh , Qinghuang Lin , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong
IPC分类号： C08G77/14
CPC分类号： C07F7/21 , G03F7/0045 , G03F7/0755 , Y10S430/106 , Y10S430/127 , Y10T428/31663
摘要： A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C., and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.
摘要翻译：提供了一种非聚合倍半硅氧烷，其中倍半硅氧烷的至少一个硅原子直接或间接地结合到酸可裂解的取代基R CL上。倍半硅氧烷的玻璃化转变温度T 大于50℃，R CL取代基可以在低于T℃的温度下从倍半硅氧烷中裂解，通常在T g以下至少5℃。倍半硅氧烷结构中的剩余硅原子可以与另外的酸可裂解基团，酸惰性极性基团R和P和/或酸惰性非极性基团R SUP>。非聚合倍半硅氧烷可以是任选具有一至三个开放顶点的多面体倍半硅氧烷，使得多面体看起来是“部分笼”结构，或两至四个这样的多面体倍半硅氧烷的大分子单体。还提供了含有新型非聚合倍半硅氧烷的光致抗蚀剂组合物，以及在制备图案化基材时使用该组合物的方法。

4. 发明授权

US06939664B2 Low-activation energy silicon-containing resist system 失效
标题翻译：低活化能含硅抗蚀剂体系
公开(公告)号：US06939664B2
公开(公告)日：2005-09-06
申请号：US10693199
申请日：2003-10-24
申请人： Wu-Song Huang , Robert D. Allen , Marie Angelopoulos , Ranee W. Kwong , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Robert D. Allen , Marie Angelopoulos , Ranee W. Kwong , Ratnam Sooriyakumaran
IPC分类号： G03C1/76 , G03F20060101 , G03F7/004 , G03F7/075 , G03E7/004
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046
摘要： Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
摘要翻译：提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅烷倍半硅氧烷聚合物含有侧链溶解性抑制酸不稳定部分，用于酸催化裂解的活化能和高光密度部分的存在被最小化或避免。本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。本发明的聚合物在正性抗蚀剂组合物中特别有用。本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

5. 发明授权

US06730454B2 Antireflective SiO-containing compositions for hardmask layer 有权
标题翻译：用于硬掩模层的抗反射SiO组合物
公开(公告)号：US06730454B2
公开(公告)日：2004-05-04
申请号：US10124087
申请日：2002-04-16
申请人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03F700
CPC分类号： H01L21/0276 , G03F7/0045 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.
摘要翻译：存在具有发色团部分和透明部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射硬掩模组合物。这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。本发明的组合物有利地用于较短波长的光刻工艺和/或具有最小的残留酸含量。

6. 发明授权

US5733705A Acid Scavengers for use in chemically amplified photoresists 失效
标题翻译：用于化学放大光致抗蚀剂的酸清除剂
公开(公告)号：US5733705A
公开(公告)日：1998-03-31
申请号：US730687
申请日：1996-10-11
申请人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khofasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
发明人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khofasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045
摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.
摘要翻译：质子海绵，小檗碱和十六烷基三甲基氢氧化铵碱化合物用作基于改性聚羟基苯乙烯（PHS）的化学放大光致抗蚀剂的添加剂。基础添加剂清除光致抗蚀剂中的游离酸，以保持改性PHS聚合物上的酸不稳定部分。碱添加剂非常适合于工业加工条件，不与光致抗蚀剂组合物中的光酸化合物反应以形成将阻碍光致抗蚀剂性能的副产物，并延长光致抗蚀剂组合物的保质期。此外，质子海绵和小檗碱碱添加剂具有与改性PHS聚合物不同的吸收光谱，因此可以容易地测定和控制光致抗蚀剂内基础添加剂的量。

7. 发明申请

US20050106494A1 Silicon-containing resist systems with cyclic ketal protecting groups 审中-公开
标题翻译：具有环状缩酮保护基的含硅抗蚀剂体系
公开(公告)号：US20050106494A1
公开(公告)日：2005-05-19
申请号：US10716785
申请日：2003-11-19
申请人： Wu-Song Huang , Robert Allen , Marie Angelopoulos , Ranee Kwong , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Robert Allen , Marie Angelopoulos , Ranee Kwong , Ratnam Sooriyakumaran
IPC分类号： G03F7/039 , C08G77/22 , G03C1/492 , G03F7/004 , G03F7/075 , G03F7/09 , G03F7/11 , G03F7/20 , H01L21/027
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0046 , G03F7/0757
摘要： Inventive silsesquioxane polymers are provided, and photoresist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting cyclic ketal acid-labile moieties that have low activation energy for acid-catalyzed cleaving. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such photoresist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
摘要翻译：提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的光致抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅倍半硅氧烷聚合物含有侧链溶解性抑制性环状缩酮酸不稳定部分，具有低活化能的酸催化裂解。本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。本发明的聚合物在正性抗蚀剂组合物中特别有用。本发明包括使用这种光致抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

8. 发明授权

US5609989A Acid scavengers for use in chemically amplified photoresists 失效
公开(公告)号：US5609989A
公开(公告)日：1997-03-11
申请号：US466568
申请日：1995-06-06
申请人： Nageshwer R. Bantu , William R. Brunsvold , George J. Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic C. Yang
发明人： Nageshwer R. Bantu , William R. Brunsvold , George J. Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic C. Yang
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045
摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.

9. 发明申请

US20050112382A1 Molecular photoresists containing nonpolymeric silsesquioxanes 有权
标题翻译：含有非聚合倍半硅氧烷的分子光刻胶
公开(公告)号：US20050112382A1
公开(公告)日：2005-05-26
申请号：US10721302
申请日：2003-11-24
申请人： Robert Allen , Wu-Song Huang , Mahmoud Khojasteh , Qinghuang Lin , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong
发明人： Robert Allen , Wu-Song Huang , Mahmoud Khojasteh , Qinghuang Lin , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong
IPC分类号： B32B25/20 , C07F7/21 , G03F7/004 , G03F7/075
CPC分类号： C07F7/21 , G03F7/0045 , G03F7/0755 , Y10S430/106 , Y10S430/127 , Y10T428/31663
摘要： A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C, and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.
摘要翻译：提供了一种非聚合倍半硅氧烷，其中倍半硅氧烷的至少一个硅原子直接或间接地结合到酸可裂解的取代基R CL上。倍半硅氧烷的玻璃化转变温度T 大于50℃，R CL取代基可以在低于T T的温度下从倍半硅氧烷中裂解通常在T T以下至少5℃。倍半硅氧烷结构中的剩余硅原子可以与另外的酸可裂解基团，酸惰性极性基团R和P和/或酸惰性非极性基团R SUP>。非聚合倍半硅氧烷可以是任选具有一至三个开放顶点的多面体倍半硅氧烷，使得多面体看起来是“部分笼”结构，或两至四个这样的多面体倍半硅氧烷的大分子单体。还提供了含有新型非聚合倍半硅氧烷的光致抗蚀剂组合物，以及在制备图案化基材时使用该组合物的方法。

10. 发明授权

US07901864B2 Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition 有权
标题翻译：辐射敏感组合物和使用该辐射敏感组合物制造器件的方法
公开(公告)号：US07901864B2
公开(公告)日：2011-03-08
申请号：US10948826
申请日：2004-09-23
申请人： Wu-Song Huang , Marie Angelopoulos , Timothy A. Brunner , Dirk Pfeiffer , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Marie Angelopoulos , Timothy A. Brunner , Dirk Pfeiffer , Ratnam Sooriyakumaran
IPC分类号： G03C1/00 , H01L21/00 , G03F1/00
CPC分类号： G03F7/0755 , G03F7/0382 , G03F7/0392
摘要： A radiation-sensitive composition (and method of fabricating a device using the composition) includes a nonpolymeric silsesquioxane including at least one acid labile moiety, a polymer including at least one member selected from the group consisting of an aqueous base soluble moiety and an acid labile moiety, and a radiation-sensitive acid generator. Another radiation-senstive composition (and method of fabricating a device using the composition) includes a nonpolymerc silsesquioxane including at least one aqueous base soluble moiety, a polymer including an aqueous base soluble moiety, a crosslinker, and a radiation-sensitive acid generator.
摘要翻译：辐射敏感性组合物（以及使用该组合物制造器件的方法）包括非聚合倍半硅氧烷，其包含至少一种酸不稳定部分，包含至少一种选自碱性水溶性部分和酸不稳定性的成员的聚合物部分和辐射敏感性酸产生剂。另一种辐射敏感组合物（以及使用该组合物制造器件的方法）包括非聚合物倍半硅氧烷，其包括至少一种水溶性基团可溶部分，包含水溶性基团可溶部分的聚合物，交联剂和辐射敏感性酸发生剂。

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